The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where James H. Stathis sits on this spectrum.
This scientist: 196 publications — 29th percentile
29% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where James H. Stathis sits on this spectrum.
This scientist: 58 D-Index — 41st percentile
41% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
James H. Stathis is affiliated with IBM in the United States and works primarily in the field of Engineering, with a specialized focus on Electrical and Electronic Engineering. Their research encompasses core topics related to semiconductor technology, including semiconductor materials and devices, advancements in semiconductor devices and circuit design, as well as ferroelectric and negative capacitance devices.
The scientist's publication record includes a number of contributions to peer-reviewed venues. Their documented work appears notably in the Japanese Journal of Applied Physics, which hosts at least one of their papers. Among recent significant publications is the 2020 paper entitled "Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)", published in the Japanese Journal of Applied Physics. This paper discusses statistical approaches relevant to dielectric breakdown and memory application reliability.
James H. Stathis has collaborated with various researchers, highlighting a focus on interdisciplinary inquiry within semiconductor research. Frequent co-authors include:
Recognition of their work includes prestigious honors such as being named an IEEE Fellow in 2011 for contributions related to complementary metal-oxide semiconductor gate-oxide reliability. Earlier, in 2005, they became a Fellow of the American Physical Society (APS), acknowledged for their work on the physical understanding of silicon dioxide reliability in MOSFET technology.
James H. Stathis's research focus integrates fundamental and applied aspects of semiconductor physics and device engineering. Their work on semiconductor materials and device reliability supports developments in modern semiconductor circuits and devices, especially addressing challenges in dielectric breakdown and novel device configurations involving ferroelectric properties.
J. H. Stathis
M. A. Tischler;R. T. Collins;J. H. Stathis;J. C. Tsang
Salvatore Lombardo;James H. Stathis;Barry P. Linder;Kin Leong Pey
James H. Stathis;Sufi Zafar
E. Cartier;J. H. Stathis;D. A. Buchanan
J.H. Stathis;D.J. DiMaria
Peter E. Blöchl;James H. Stathis
J.H. Stathis
J. H. Stathis
J. H. Stathis;M. A. Kastner
S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral
J. H. Stathis;M. A. Kastner
Min Yang;V.W.C. Chan;K.K. Chan;L. Shi
J. H. Stathis;E. Cartier
J.H. Stathis
R. T. Collins;M. A. Tischler;J. H. Stathis
D. J. DiMaria;J. H. Stathis
Ernest Y Wu;James H Stathis;Liang-Kai Han
D. J. DiMaria;J. H. Stathis
D. J. DiMaria;J. H. Stathis
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