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James H. Stathis

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 58 7717 7459 1914 1774 196 11655

James H. Stathis publications per year

The chart shows the history of publications by James H. Stathis between 1980 and 2022, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. James H. Stathis published across 43 years, from 1980 to 2022, averaging 4.8 papers a year. Output peaked at 11 publications in 2017. 2 of the 206 publications appeared in the last two years.

No. of publications
2 4 6 8 10
Bar chart. Horizontal axis: year, 1980 to 2022. Vertical axis: number of publications, 0 to 11. Peak 11 publications in 2017. 1980: 1 publication 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 1 publication 1985: 2 publications 1986: 0 publications 1987: 2 publications 1988: 5 publications 1989: 3 publications 1990: 2 publications 1991: 8 publications 1992: 4 publications 1993: 5 publications 1994: 3 publications 1995: 6 publications 1996: 4 publications 1997: 7 publications 1998: 4 publications 1999: 8 publications 2000: 3 publications 2001: 8 publications 2002: 7 publications 2003: 9 publications 2004: 10 publications 2005: 4 publications 2006: 8 publications 2007: 4 publications 2008: 3 publications 2009: 9 publications 2010: 7 publications 2011: 8 publications 2012: 5 publications 2013: 4 publications 2014: 10 publications 2015: 6 publications 2016: 5 publications 2017: 11 publications 2018: 9 publications 2019: 5 publications 2020: 4 publications 2021: 0 publications 2022: 2 publications
1980 2022

206 publications in total across all disciplines

View publications per year as a table
James H. Stathis: publications per year, 1980 to 2022
Year Publications
1980 1
1981 0
1982 0
1983 0
1984 1
1985 2
1986 0
1987 2
1988 5
1989 3
1990 2
1991 8
1992 4
1993 5
1994 3
1995 6
1996 4
1997 7
1998 4
1999 8
2000 3
2001 8
2002 7
2003 9
2004 10
2005 4
2006 8
2007 4
2008 3
2009 9
2010 7
2011 8
2012 5
2013 4
2014 10
2015 6
2016 5
2017 11
2018 9
2019 5
2020 4
2021 0
2022 2
Total 206
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James H. Stathis publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where James H. Stathis sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 190–209 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 196 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891 196
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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James H. Stathis D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where James H. Stathis sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 58–59 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 58 D-Index — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610 58
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2011 - IEEE Fellow For contributions to complementary metal-oxide semiconductor gate-oxide reliability
  • 2005 - Fellow of American Physical Society (APS) Citation For significant contributions to the physical understanding of silicon dioxide reliability in MOSFET technology

Overview

James H. Stathis is affiliated with IBM in the United States and works primarily in the field of Engineering, with a specialized focus on Electrical and Electronic Engineering. Their research encompasses core topics related to semiconductor technology, including semiconductor materials and devices, advancements in semiconductor devices and circuit design, as well as ferroelectric and negative capacitance devices.

The scientist's publication record includes a number of contributions to peer-reviewed venues. Their documented work appears notably in the Japanese Journal of Applied Physics, which hosts at least one of their papers. Among recent significant publications is the 2020 paper entitled "Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)", published in the Japanese Journal of Applied Physics. This paper discusses statistical approaches relevant to dielectric breakdown and memory application reliability.

James H. Stathis has collaborated with various researchers, highlighting a focus on interdisciplinary inquiry within semiconductor research. Frequent co-authors include:

  • Ernest Y. Wu
  • Takashi Ando
  • Baozhen Li
  • Richard G. Southwick

Recognition of their work includes prestigious honors such as being named an IEEE Fellow in 2011 for contributions related to complementary metal-oxide semiconductor gate-oxide reliability. Earlier, in 2005, they became a Fellow of the American Physical Society (APS), acknowledged for their work on the physical understanding of silicon dioxide reliability in MOSFET technology.

James H. Stathis's research focus integrates fundamental and applied aspects of semiconductor physics and device engineering. Their work on semiconductor materials and device reliability supports developments in modern semiconductor circuits and devices, especially addressing challenges in dielectric breakdown and novel device configurations involving ferroelectric properties.

Best Publications

  • Percolation models for gate oxide breakdown

    J. H. Stathis

  • Luminescence degradation in porous silicon

    M. A. Tischler;R. T. Collins;J. H. Stathis;J. C. Tsang

  • Dielectric breakdown mechanisms in gate oxides

    Salvatore Lombardo;James H. Stathis;Barry P. Linder;Kin Leong Pey

  • The negative bias temperature instability in MOS devices: A review

    James H. Stathis;Sufi Zafar

  • Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

    E. Cartier;J. H. Stathis;D. A. Buchanan

  • Reliability projection for ultra-thin oxides at low voltage

    J.H. Stathis;D.J. DiMaria

  • HYDROGEN ELECTROCHEMISTRY AND STRESS-INDUCED LEAKAGE CURRENT IN SILICA

    Peter E. Blöchl;James H. Stathis

  • Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

    J.H. Stathis

  • Reliability limits for the gate insulator in CMOS technology

    J. H. Stathis

  • Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide

    J. H. Stathis;M. A. Kastner

  • A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

    S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral

  • Time-resolved photoluminescence in amorphous silicon dioxide.

    J. H. Stathis;M. A. Kastner

  • Hybrid-orientation technology (HOT): opportunities and challenges

    Min Yang;V.W.C. Chan;K.K. Chan;L. Shi

  • Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface.

    J. H. Stathis;E. Cartier

  • Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits

    J.H. Stathis

  • Photoinduced hydrogen loss from porous silicon

    R. T. Collins;M. A. Tischler;J. H. Stathis

  • Trapping and trap creation studies on nitrided and reoxidized‐nitrided silicon dioxide films on silicon

    D. J. DiMaria;J. H. Stathis

  • Ultra-thin oxide reliability for ULSI applications

    Ernest Y Wu;James H Stathis;Liang-Kai Han

  • Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films

    D. J. DiMaria;J. H. Stathis

  • Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films

    D. J. DiMaria;J. H. Stathis

Frequent Co-Authors

Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Ernest Y. Wu
Ernest Y. Wu IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Vijay Narayanan
Vijay Narayanan IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Douglas A. Buchanan
Douglas A. Buchanan University of Manitoba
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
Ching-Te Chuang
Ching-Te Chuang National Yang Ming Chiao Tung University
Michael P. Chudzik
Michael P. Chudzik IBM (United States)

External Links

Personal website of James H. Stathis Google Scholar page

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Best Scientists Citing James H. Stathis

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 124

Jordi Suñé

Jordi Suñé

Autonomous University of Barcelona

Publications: 80

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 79

Kin Leong Pey

Kin Leong Pey

Singapore University of Technology and Design

Publications: 69

Souvik Mahapatra

Souvik Mahapatra

Indian Institute of Technology Bombay

Publications: 64

Enrique Miranda

Enrique Miranda

Autonomous University of Barcelona

Publications: 64

Ernest Y. Wu

Ernest Y. Wu

IBM (United States)

Publications: 63

Robin Degraeve

Robin Degraeve

Imec

Publications: 58

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 54

Andre Stesmans

Andre Stesmans

KU Leuven

Publications: 48

Ben Kaczer

Ben Kaczer

Imec

Publications: 45

Montserrat Nafría

Montserrat Nafría

Autonomous University of Barcelona

Publications: 44

Sokrates T. Pantelides

Sokrates T. Pantelides

Vanderbilt University

Publications: 39

Eduard A. Cartier

Eduard A. Cartier

IBM (United States)

Publications: 38

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 34

Patrick M. Lenahan

Patrick M. Lenahan

Pennsylvania State University

Publications: 34

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Dalian University of Technology

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Benjamin R. Miller

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Elaine L. Jacobson

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Helen Davies

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