2026 Patrick M. Lenahan: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	59	7519	7269	1857	1720	342	9877

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

7519

7269

1857

1720

342

9877

Research.com Recognitions

2010 - IEEE Fellow For contributions to understanding of radiation damage and reliabilityof metal-oxide semiconductor devices

Overview

Patrick M. Lenahan is affiliated with Pennsylvania State University in the United States and is recognized primarily within the field of engineering, with a focus on electrical and electronic engineering. Their research spans several subfields including atomic and molecular physics, materials chemistry, biophysics, and radiology, nuclear medicine and imaging.

The scientist's work concentrates heavily on semiconductor materials and devices, documenting 36 publications in this area. Other main research topics include advancements in semiconductor devices and circuit design, quantum and electron transport phenomena, integrated circuits and semiconductor failure analysis, silicon and solar cell technologies, electron spin resonance studies, and ZnO doping and properties.

Frequent publication venues for Lenahan include:

Journal of Applied Physics
Applied Physics Letters
IEEE Transactions on Nuclear Science
arXiv (Cornell University)
Review of Scientific Instruments

Frequent co-authors working alongside Lenahan are:

James P. Ashton
Michael E. Flatté
Nicholas J. Harmon
Stephen J. Moxim
Brian R. Manning

Recent significant papers authored or co-authored by Lenahan include:

Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance, 2020, IEEE Transactions on Nuclear Science
Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO₂ MOSFETs, 2020, IEEE Transactions on Nuclear Science
An improved adaptive signal averaging technique for noise reduction and tracking enhancements in continuous wave magnetic resonance, 2020, Review of Scientific Instruments
Multiple-photon transitions in electrically detected magnetic resonance measurements of 4H−SiC transistors, 2020, Physical Review B
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors, 2022, Applied Physics Letters

Lenahan has been recognized as an IEEE Fellow since 2010 for contributions to the understanding of radiation damage and reliability of metal-oxide semiconductor devices. This distinction reflects involvement in research relevant to semiconductor device reliability and radiation effects.

Best Publications

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Patrick M. Lenahan;P. V. Dressendorfer

876
Citations
What can electron paramagnetic resonance tell us about the Si/SiO2 system?

Patrick M. Lenahan;J. F. Conley

421
Citations
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study

D. T. Krick;P. M. Lenahan;J. Kanicki

224
Citations
The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

201
Citations
An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface

P. M. Lenahan;P. V. Dressendorfer

195
Citations
Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates

Yong Yun Kim;P. M. Lenahan

187
Citations
Thermal-equilibrium defect processes in hydrogenated amorphous silicon

Z. E. Smith;S. Aljishi;D. Slobodin;V. Chu

186
Citations
First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride

William L. Warren;Patrick M. Lenahan;Sean E. Curry

176
Citations
Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

P. M. Lenahan;P. V. Dressendorfer

173
Citations
Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

A. Y. Kang;P. M. Lenahan;J. F. Conley

141
Citations
Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures

P. M. Lenahan;P. V. Dressendorfer

133
Citations
First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

P. M. Lenahan;Sean E. Curry

132
Citations
Atomic-Scale Defects Involved in the Negative-Bias Temperature Instability

J.P. Campbell;P.M. Lenahan;C.J. Cochrane;A.T. Krishnan

130
Citations
Nature of the E’ deep hole trap in metal‐oxide‐semiconductor oxides

H. S. Witham;P. M. Lenahan

127
Citations
An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

C. J. Cochrane;P. M. Lenahan;A. J. Lelis

126
Citations
Nature of the dominant deep trap in amorphous silicon nitride.

D. T. Krick;P. M. Lenahan;J. Kanicki

126
Citations
Inorganic-polymer-derived dielectric films

C. Jeffrey Brinker;Keith D. Keefer;Patrick M. Lenahan

125
Citations
Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride.

William L. Warren;Patrick M. Lenahan

123
Citations
Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

J. F. Conley;P. M. Lenahan

120
Citations
Density of states of Pb1 Si/SiO2 interface trap centers

J. P. Campbell;Patrick M. Lenahan

112
Citations