What is he best known for?
The fields of study he is best known for:
- Electron
- Semiconductor
- Silicon
His primary scientific interests are in Electron paramagnetic resonance, Silicon, Optoelectronics, Dangling bond and Crystallographic defect.
His Electron paramagnetic resonance research includes elements of Annealing, Molecular physics, Resonance and Paramagnetism.
The concepts of his Silicon study are interwoven with issues in Oxide, Condensed matter physics, Irradiation and Voltage.
The High-κ dielectric research he does as part of his general Optoelectronics study is frequently linked to other disciplines of science, such as Electric field, therefore creating a link between diverse domains of science.
His Dangling bond study combines topics from a wide range of disciplines, such as Silicon nitride, Mineralogy and MOSFET.
His Crystallographic defect study integrates concerns from other disciplines, such as Radiation damage and Atomic physics.
His most cited work include:
- Hole traps and trivalent silicon centers in metal/oxide/silicon devices (586 citations)
- What can electron paramagnetic resonance tell us about the Si/SiO2 system? (265 citations)
- Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study (156 citations)
What are the main themes of his work throughout his whole career to date?
Patrick M. Lenahan mainly focuses on Silicon, Electron paramagnetic resonance, Optoelectronics, Condensed matter physics and MOSFET.
His work on Dangling bond as part of general Silicon study is frequently connected to Atomic units, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.
His Electron paramagnetic resonance study incorporates themes from Crystallographic defect, Paramagnetism, Molecular physics and Analytical chemistry.
His research investigates the connection between Optoelectronics and topics such as Field-effect transistor that intersect with issues in Wide-bandgap semiconductor.
His work carried out in the field of Condensed matter physics brings together such families of science as Electron, Hyperfine structure and Magnetoresistance.
His study in MOSFET is interdisciplinary in nature, drawing from both Resonance and Electronic engineering.
He most often published in these fields:
- Silicon (45.03%)
- Electron paramagnetic resonance (37.89%)
- Optoelectronics (37.27%)
What were the highlights of his more recent work (between 2016-2021)?
- Optoelectronics (37.27%)
- Condensed matter physics (27.33%)
- Electrically detected magnetic resonance (7.14%)
In recent papers he was focusing on the following fields of study:
His primary areas of investigation include Optoelectronics, Condensed matter physics, Electrically detected magnetic resonance, Magnetoresistance and Transistor.
His Optoelectronics research incorporates elements of Oxide and MOSFET.
His MOSFET study also includes
- Resonance that intertwine with fields like Crystallographic defect,
- Semiconductor which intersects with area such as Wide-bandgap semiconductor.
His studies deal with areas such as Charge pumping and Zero field as well as Condensed matter physics.
His specific area of interest is Silicon, where Patrick M. Lenahan studies Dangling bond.
His research in Absorbed dose focuses on subjects like Electron paramagnetic resonance, which are connected to Radiation damage.
Between 2016 and 2021, his most popular works were:
- Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface (14 citations)
- Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators (7 citations)
- A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy (7 citations)
In his most recent research, the most cited papers focused on:
- Electron
- Semiconductor
- Electrical engineering
Patrick M. Lenahan mostly deals with Optoelectronics, Condensed matter physics, MOSFET, Spin and Quantum tunnelling.
His Optoelectronics study combines topics from a wide range of disciplines, such as Radiation, Transistor, Bipolar junction transistor and Electron paramagnetic resonance.
In MOSFET, he works on issues like Semiconductor, which are connected to Resonator, Resonance, Wafer and Wide-bandgap semiconductor.
His Spin research is multidisciplinary, relying on both Spins and Hyperfine structure.
As part of the same scientific family, he usually focuses on Hyperfine structure, concentrating on Dielectric and intersecting with Atomic physics.
His research in Quantum tunnelling intersects with topics in Silicon and Magnetoresistance.
This overview was generated by a machine learning system which analysed the scientist’s
body of work. If you have any feedback, you can
contact us
here.
