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D-Index & Metrics

Materials Science

D-Index
59
Citations
9877
World Ranking
7517
National Ranking
1855

Patrick M. Lenahan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Patrick M. Lenahan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 342 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Patrick M. Lenahan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Patrick M. Lenahan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to understanding of radiation damage and reliabilityof metal-oxide semiconductor devices

Overview

Patrick M. Lenahan is affiliated with Pennsylvania State University in the United States and is recognized primarily within the field of engineering, with a focus on electrical and electronic engineering. Their research spans several subfields including atomic and molecular physics, materials chemistry, biophysics, and radiology, nuclear medicine and imaging.

The scientist's work concentrates heavily on semiconductor materials and devices, documenting 36 publications in this area. Other main research topics include advancements in semiconductor devices and circuit design, quantum and electron transport phenomena, integrated circuits and semiconductor failure analysis, silicon and solar cell technologies, electron spin resonance studies, and ZnO doping and properties.

Frequent publication venues for Lenahan include:

  • Journal of Applied Physics
  • Applied Physics Letters
  • IEEE Transactions on Nuclear Science
  • arXiv (Cornell University)
  • Review of Scientific Instruments

Frequent co-authors working alongside Lenahan are:

  • James P. Ashton
  • Michael E. Flatté
  • Nicholas J. Harmon
  • Stephen J. Moxim
  • Brian R. Manning

Recent significant papers authored or co-authored by Lenahan include:

  • Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance, 2020, IEEE Transactions on Nuclear Science
  • Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs, 2020, IEEE Transactions on Nuclear Science
  • An improved adaptive signal averaging technique for noise reduction and tracking enhancements in continuous wave magnetic resonance, 2020, Review of Scientific Instruments
  • Multiple-photon transitions in electrically detected magnetic resonance measurements of 4H−SiC transistors, 2020, Physical Review B
  • Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors, 2022, Applied Physics Letters

Lenahan has been recognized as an IEEE Fellow since 2010 for contributions to the understanding of radiation damage and reliability of metal-oxide semiconductor devices. This distinction reflects involvement in research relevant to semiconductor device reliability and radiation effects.

Best Publications

  • Hole traps and trivalent silicon centers in metal/oxide/silicon devices

    Patrick M. Lenahan;P. V. Dressendorfer

  • What can electron paramagnetic resonance tell us about the Si/SiO2 system?

    Patrick M. Lenahan;J. F. Conley

  • Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study

    D. T. Krick;P. M. Lenahan;J. Kanicki

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface

    P. M. Lenahan;P. V. Dressendorfer

  • Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates

    Yong Yun Kim;P. M. Lenahan

  • Thermal-equilibrium defect processes in hydrogenated amorphous silicon

    Z. E. Smith;S. Aljishi;D. Slobodin;V. Chu

  • First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride

    William L. Warren;Patrick M. Lenahan;Sean E. Curry

  • Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

    P. M. Lenahan;P. V. Dressendorfer

  • Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

    A. Y. Kang;P. M. Lenahan;J. F. Conley

  • Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures

    P. M. Lenahan;P. V. Dressendorfer

  • First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

    P. M. Lenahan;Sean E. Curry

  • Atomic-Scale Defects Involved in the Negative-Bias Temperature Instability

    J.P. Campbell;P.M. Lenahan;C.J. Cochrane;A.T. Krishnan

  • Nature of the E’ deep hole trap in metal‐oxide‐semiconductor oxides

    H. S. Witham;P. M. Lenahan

  • An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

    C. J. Cochrane;P. M. Lenahan;A. J. Lelis

  • Nature of the dominant deep trap in amorphous silicon nitride.

    D. T. Krick;P. M. Lenahan;J. Kanicki

  • Inorganic-polymer-derived dielectric films

    C. Jeffrey Brinker;Keith D. Keefer;Patrick M. Lenahan

  • Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride.

    William L. Warren;Patrick M. Lenahan

  • Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

    J. F. Conley;P. M. Lenahan

  • Density of states of Pb1 Si/SiO2 interface trap centers

    J. P. Campbell;Patrick M. Lenahan

Frequent Co-Authors

John F. Conley
John F. Conley Oregon State University
William L. Warren
William L. Warren Sanofi Pasteur
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Jerzy Kanicki
Jerzy Kanicki University of Michigan–Ann Arbor
Sridhar Krishnan
Sridhar Krishnan Toronto Metropolitan University
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
John Robertson
John Robertson University of Cambridge
C. Jeffrey Brinker
C. Jeffrey Brinker University of New Mexico
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University

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