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Materials Science
Korea
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
71
Citations
19858
World Ranking
860
National Ranking
15

Materials Science

D-Index
75
Citations
21303
World Ranking
3437
National Ranking
108

Research.com Recognitions

  • 2022 - Research.com Materials Science in Korea Leader Award

Overview

Byoung Hun Lee is affiliated with Pohang University of Science and Technology in South Korea. Their research primarily focuses on the fields of engineering and materials science, with significant contributions in subfields such as electrical and electronic engineering, materials chemistry, and biomedical engineering. Additional areas of involvement include atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The scientist's work concentrates on several main topics, including semiconductor materials and devices, 2D materials and applications, graphene research and applications, advanced memory and neural computing, ferroelectric and negative capacitance devices, nanowire synthesis and applications, and MXene and MAX phase materials.

Byoung Hun Lee has published extensively in notable venues, frequently contributing to:

  • IEEE Photonics Technology Letters
  • Nanomaterials
  • Advanced Electronic Materials
  • ACS Applied Materials & Interfaces
  • Nanophotonics

Their recent papers include:

  • "Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium" (2021, ACS Nano)
  • "Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer" (2021, Nanophotonics)
  • "Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions" (2020, ACS Applied Materials & Interfaces)
  • "MXenes for future nanophotonic device applications" (2020, Nanophotonics)
  • "High-responsivity PtSe2 photodetector enhanced by photogating effect" (2021, Applied Physics Letters)

Throughout their career, Byoung Hun Lee has collaborated frequently with several coauthors, including:

  • Hyeon Jun Hwang
  • A. Kasukawa
  • M Mashanovitch
  • F Garcia-Gunning
  • Gabriella Cincotti

Best Publications

  • Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers

    Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee

  • Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

    Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi

  • Charge-transfer-based gas sensing using atomic-layer MoS2.

    Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon

  • Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

    Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim

  • Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

    J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker

  • Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

    Jongwon Yoon;Woojin Park;Ga Yeong Bae;Yonghun Kim

  • Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

    Laegu Kang;Byoung Hun Lee;Wen-Jie Qi;Yongjoo Jeon

  • Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

    J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker

  • Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron

    Myonglae Chu;Byoungho Kim;Sangsu Park;Hyunsang Hwang

  • Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    Kyungah Seo;Insung Kim;Seungjae Jung;Minseok Jo

  • Gate stack technology for nanoscale devices

    Byoung Hun Lee;Jungwoo Oh;Hsing Huang Tseng;Rajarao Jammy

  • Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

    Wen Jie Qi;Renee Nieh;Byoung Hun Lee;Laegu Kang

  • Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

    Yong J. Cho;Nhan V. Nguyen;Curt A. Richter;James R. Ehrstein

  • Electronic system with memristive synapses for pattern recognition

    Sangsu Park;Myonglae Chu;Jongin Kim;Jinwoo Noh

  • Neuromorphic speech systems using advanced ReRAM-based synapse

    S. Park;A. Sheri;J. Kim;J. Noh

  • RRAM-based synapse for neuromorphic system with pattern recognition function

    S. Park;H. Kim;M. Choo;J. Noh

  • Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography

    Jeong Gon Son;Myungwoo Son;Kyeong Joo Moon;Byoung Hun Lee

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

    Byoung Hun Lee;Yongjoo Jeon;Keith Zawadzki;Wen Jie Qi

  • Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2

    Byungjin Cho;Ah Ra Kim;Youngjin Park;Jongwon Yoon

  • Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

    S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch

Frequent Co-Authors

Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Rino Choi
Rino Choi Inha University
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Prashant Majhi
Prashant Majhi Intel (United States)
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Myung M. Sung
Myung M. Sung Hanyang University
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Seongil Im
Seongil Im Yonsei University

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