Byoung Hun Lee mainly investigates Optoelectronics, High-κ dielectric, Dielectric, Analytical chemistry and Gate dielectric. His Optoelectronics research is multidisciplinary, incorporating elements of Thin-film transistor, Transistor, Gate oxide, Electronic engineering and Electrical engineering. His work deals with themes such as Thin film, Electrical measurements and Induced high electron mobility transistor, which intersect with High-κ dielectric.
His Dielectric research incorporates elements of Amorphous solid and Layer. His biological study spans a wide range of topics, including Electron mobility, Oxide, Annealing and Quantum tunnelling. His Gate dielectric study incorporates themes from Equivalent oxide thickness and MOSFET.
Byoung Hun Lee mainly focuses on Optoelectronics, Dielectric, High-κ dielectric, Gate dielectric and MOSFET. The various areas that Byoung Hun Lee examines in his Optoelectronics study include Metal gate, Transistor, Gate oxide, Electronic engineering and Electrical engineering. His Transistor study combines topics from a wide range of disciplines, such as Graphene and Thin-film transistor.
He combines subjects such as Silicon, Layer, Atomic layer deposition, Condensed matter physics and Threshold voltage with his study of Dielectric. His High-κ dielectric research focuses on Analytical chemistry and how it connects with Annealing. His Gate dielectric research includes themes of Capacitance, Equivalent oxide thickness, Hafnium and Leakage.
His main research concerns Optoelectronics, Graphene, Transistor, Photodetector and Doping. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Thin film and Transition metal. His Graphene study improves the overall literature in Nanotechnology.
Byoung Hun Lee studied Transistor and Quantum tunnelling that intersect with Silicon on insulator and Stress. The Doping study combines topics in areas such as Annealing and Polymer. Byoung Hun Lee usually deals with Composite material and limits it to topics linked to Dielectric and Passivation.
His primary scientific interests are in Optoelectronics, Graphene, Doping, Photodetector and Nanotechnology. He works on Optoelectronics which deals in particular with Photocurrent. His Graphene research includes elements of Electron mobility, Heterojunction, Nanosphere lithography, Etching and Threshold voltage.
His study looks at the relationship between Doping and topics such as Polymer, which overlap with Polyethylene glycol, Graphene oxide paper, Scientific method and Modulation. His Nanotechnology research integrates issues from Thermodynamic cycle and Transistor array. His research in Field-effect transistor focuses on subjects like Semiconductor, which are connected to Dielectric.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers
Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee.
Journal of The Electrochemical Society (2008)
Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers
Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee.
Journal of The Electrochemical Society (2008)
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi.
Applied Physics Letters (2000)
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi.
Applied Physics Letters (2000)
Charge-transfer-based gas sensing using atomic-layer MoS2.
Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon.
Scientific Reports (2015)
Charge-transfer-based gas sensing using atomic-layer MoS2.
Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon.
Scientific Reports (2015)
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker.
Applied Physics Letters (2006)
Chemical Sensing of 2D Graphene/MoS2 Heterostructure device
Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim.
ACS Applied Materials & Interfaces (2015)
Chemical Sensing of 2D Graphene/MoS2 Heterostructure device
Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim.
ACS Applied Materials & Interfaces (2015)
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.
Jongwon Yoon;Woojin Park;Ga Yeong Bae;Yonghun Kim.
Small (2013)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
The Aerospace Corporation
Inha University
Samsung Austin Semiconductor
Intel (United States)
King Abdullah University of Science and Technology
Pohang University of Science and Technology
The University of Texas at Austin
The University of Texas at Dallas
Yonsei University
King Abdullah University of Science and Technology
Michigan State University
University of Southern California
University of Waterloo
University of Maryland, College Park
DuPont (United States)
National Taiwan University
Agricultural Research Service
University of California, Berkeley
Donald Danforth Plant Science Center
Los Alamos National Laboratory
Université Paris Cité
United States Geological Survey
University of Virginia
University of Kansas
Aarhus University Hospital
University of Utah