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Materials Science
Korea
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
71
Citations
19858
World Ranking
860
National Ranking
15

Materials Science

D-Index
75
Citations
21303
World Ranking
3435
National Ranking
108

Byoung Hun Lee publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Byoung Hun Lee sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 564 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Byoung Hun Lee D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Byoung Hun Lee sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 71 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Korea Leader Award

Overview

Byoung Hun Lee is affiliated with Pohang University of Science and Technology in South Korea. Their research primarily focuses on the fields of engineering and materials science, with significant contributions in subfields such as electrical and electronic engineering, materials chemistry, and biomedical engineering. Additional areas of involvement include atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The scientist's work concentrates on several main topics, including semiconductor materials and devices, 2D materials and applications, graphene research and applications, advanced memory and neural computing, ferroelectric and negative capacitance devices, nanowire synthesis and applications, and MXene and MAX phase materials.

Byoung Hun Lee has published extensively in notable venues, frequently contributing to:

  • IEEE Photonics Technology Letters
  • Nanomaterials
  • Advanced Electronic Materials
  • ACS Applied Materials & Interfaces
  • Nanophotonics

Their recent papers include:

  • "Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium" (2021, ACS Nano)
  • "Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer" (2021, Nanophotonics)
  • "Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions" (2020, ACS Applied Materials & Interfaces)
  • "MXenes for future nanophotonic device applications" (2020, Nanophotonics)
  • "High-responsivity PtSe2 photodetector enhanced by photogating effect" (2021, Applied Physics Letters)

Throughout their career, Byoung Hun Lee has collaborated frequently with several coauthors, including:

  • Hyeon Jun Hwang
  • A. Kasukawa
  • M Mashanovitch
  • F Garcia-Gunning
  • Gabriella Cincotti

Best Publications

  • Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers

    Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee

  • Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

    Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi

  • Charge-transfer-based gas sensing using atomic-layer MoS2.

    Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon

  • Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

    Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim

  • Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

    J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker

  • Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

    Jongwon Yoon;Woojin Park;Ga Yeong Bae;Yonghun Kim

  • Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

    Laegu Kang;Byoung Hun Lee;Wen-Jie Qi;Yongjoo Jeon

  • Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

    J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker

  • Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron

    Myonglae Chu;Byoungho Kim;Sangsu Park;Hyunsang Hwang

  • Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    Kyungah Seo;Insung Kim;Seungjae Jung;Minseok Jo

  • Gate stack technology for nanoscale devices

    Byoung Hun Lee;Jungwoo Oh;Hsing Huang Tseng;Rajarao Jammy

  • Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

    Wen Jie Qi;Renee Nieh;Byoung Hun Lee;Laegu Kang

  • Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

    Yong J. Cho;Nhan V. Nguyen;Curt A. Richter;James R. Ehrstein

  • Electronic system with memristive synapses for pattern recognition

    Sangsu Park;Myonglae Chu;Jongin Kim;Jinwoo Noh

  • Neuromorphic speech systems using advanced ReRAM-based synapse

    S. Park;A. Sheri;J. Kim;J. Noh

  • RRAM-based synapse for neuromorphic system with pattern recognition function

    S. Park;H. Kim;M. Choo;J. Noh

  • Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography

    Jeong Gon Son;Myungwoo Son;Kyeong Joo Moon;Byoung Hun Lee

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

    Byoung Hun Lee;Yongjoo Jeon;Keith Zawadzki;Wen Jie Qi

  • Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2

    Byungjin Cho;Ah Ra Kim;Youngjin Park;Jongwon Yoon

  • Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

    S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch

Frequent Co-Authors

Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Rino Choi
Rino Choi Inha University
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Prashant Majhi
Prashant Majhi Intel (United States)
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Myung M. Sung
Myung M. Sung Hanyang University
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Seongil Im
Seongil Im Yonsei University

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