D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 64 Citations 15,257 435 World Ranking 2571 National Ranking 82
Electronics and Electrical Engineering D-index 62 Citations 14,857 502 World Ranking 850 National Ranking 20

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Composite material

Byoung Hun Lee mainly investigates Optoelectronics, High-κ dielectric, Dielectric, Analytical chemistry and Gate dielectric. His Optoelectronics research is multidisciplinary, incorporating elements of Thin-film transistor, Transistor, Gate oxide, Electronic engineering and Electrical engineering. His work deals with themes such as Thin film, Electrical measurements and Induced high electron mobility transistor, which intersect with High-κ dielectric.

His Dielectric research incorporates elements of Amorphous solid and Layer. His biological study spans a wide range of topics, including Electron mobility, Oxide, Annealing and Quantum tunnelling. His Gate dielectric study incorporates themes from Equivalent oxide thickness and MOSFET.

His most cited work include:

  • Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers (978 citations)
  • Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing (547 citations)
  • Charge-transfer-based gas sensing using atomic-layer MoS2. (306 citations)

What are the main themes of his work throughout his whole career to date?

Byoung Hun Lee mainly focuses on Optoelectronics, Dielectric, High-κ dielectric, Gate dielectric and MOSFET. The various areas that Byoung Hun Lee examines in his Optoelectronics study include Metal gate, Transistor, Gate oxide, Electronic engineering and Electrical engineering. His Transistor study combines topics from a wide range of disciplines, such as Graphene and Thin-film transistor.

He combines subjects such as Silicon, Layer, Atomic layer deposition, Condensed matter physics and Threshold voltage with his study of Dielectric. His High-κ dielectric research focuses on Analytical chemistry and how it connects with Annealing. His Gate dielectric research includes themes of Capacitance, Equivalent oxide thickness, Hafnium and Leakage.

He most often published in these fields:

  • Optoelectronics (68.83%)
  • Dielectric (30.45%)
  • High-κ dielectric (31.53%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (68.83%)
  • Graphene (14.59%)
  • Transistor (17.84%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Graphene, Transistor, Photodetector and Doping. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Thin film and Transition metal. His Graphene study improves the overall literature in Nanotechnology.

Byoung Hun Lee studied Transistor and Quantum tunnelling that intersect with Silicon on insulator and Stress. The Doping study combines topics in areas such as Annealing and Polymer. Byoung Hun Lee usually deals with Composite material and limits it to topics linked to Dielectric and Passivation.

Between 2016 and 2021, his most popular works were:

  • Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide (62 citations)
  • Tailoring Crystallographic Orientations to Substantially Enhance Charge Separation Efficiency in Anisotropic BiVO4 Photoanodes (35 citations)
  • ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors (26 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Composite material

His primary scientific interests are in Optoelectronics, Graphene, Doping, Photodetector and Nanotechnology. He works on Optoelectronics which deals in particular with Photocurrent. His Graphene research includes elements of Electron mobility, Heterojunction, Nanosphere lithography, Etching and Threshold voltage.

His study looks at the relationship between Doping and topics such as Polymer, which overlap with Polyethylene glycol, Graphene oxide paper, Scientific method and Modulation. His Nanotechnology research integrates issues from Thermodynamic cycle and Transistor array. His research in Field-effect transistor focuses on subjects like Semiconductor, which are connected to Dielectric.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers

Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee.
Journal of The Electrochemical Society (2008)

987 Citations

Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers

Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee.
Journal of The Electrochemical Society (2008)

987 Citations

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi.
Applied Physics Letters (2000)

769 Citations

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi.
Applied Physics Letters (2000)

769 Citations

Charge-transfer-based gas sensing using atomic-layer MoS2.

Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon.
Scientific Reports (2015)

485 Citations

Charge-transfer-based gas sensing using atomic-layer MoS2.

Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon.
Scientific Reports (2015)

485 Citations

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker.
Applied Physics Letters (2006)

360 Citations

Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim.
ACS Applied Materials & Interfaces (2015)

346 Citations

Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim.
ACS Applied Materials & Interfaces (2015)

346 Citations

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

Jongwon Yoon;Woojin Park;Ga Yeong Bae;Yonghun Kim.
Small (2013)

339 Citations

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