What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Transistor
The scientist’s investigation covers issues in Dielectric, High-κ dielectric, Optoelectronics, Analytical chemistry and Condensed matter physics.
His Dielectric study incorporates themes from Threshold voltage, Electronic engineering, Quantum tunnelling and Capacitor.
His studies in High-κ dielectric integrate themes in fields like Electrical measurements, Hafnium, MOSFET, Gate dielectric and Thermal ionization.
His Optoelectronics study combines topics in areas such as Transistor, Protein filament, Resistive random-access memory and Current.
His study in Analytical chemistry is interdisciplinary in nature, drawing from both Chemical vapor deposition, Electron mobility, Annealing, Layer and Molecular physics.
The study incorporates disciplines such as Stress, Oxide and Ionic radius in addition to Condensed matter physics.
His most cited work include:
- Negative oxygen vacancies in HfO2 as charge traps in high-k stacks (237 citations)
- Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks (214 citations)
- Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory (173 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of investigation include Optoelectronics, Dielectric, High-κ dielectric, MOSFET and Gate dielectric.
Gennadi Bersuker works mostly in the field of Optoelectronics, limiting it down to concerns involving Electronic engineering and, occasionally, Reliability and Resistive random-access memory.
Gennadi Bersuker combines subjects such as Analytical chemistry, Oxide, Layer, Condensed matter physics and Voltage with his study of Dielectric.
His High-κ dielectric study integrates concerns from other disciplines, such as Hafnium, Dielectric strength, Time-dependent gate oxide breakdown, Transient and Gate stack.
His study looks at the relationship between MOSFET and topics such as Threshold voltage, which overlap with PMOS logic.
His Gate dielectric research incorporates themes from Field-effect transistor, Leakage, Equivalent oxide thickness and Atomic layer deposition.
He most often published in these fields:
- Optoelectronics (57.34%)
- Dielectric (39.24%)
- High-κ dielectric (36.42%)
What were the highlights of his more recent work (between 2012-2020)?
- Optoelectronics (57.34%)
- Dielectric (39.24%)
- Resistive random-access memory (7.65%)
In recent papers he was focusing on the following fields of study:
Optoelectronics, Dielectric, Resistive random-access memory, Electronic engineering and Analytical chemistry are his primary areas of study.
The various areas that he examines in his Optoelectronics study include Metal gate and MOSFET.
His research in Dielectric intersects with topics in Layer, Substrate, Stress and Threshold voltage.
The concepts of his Electronic engineering study are interwoven with issues in Resistive touchscreen and Reliability.
Gennadi Bersuker combines subjects such as Etching, Oxide, Quantum tunnelling and Dopant with his study of Analytical chemistry.
His studies in High-κ dielectric integrate themes in fields like Charge pump and Gate oxide.
Between 2012 and 2020, his most popular works were:
- Microscopic Modeling of HfO x RRAM Operations: From Forming to Switching (69 citations)
- An Empirical Model for RRAM Resistance in Low- and High-Resistance States (62 citations)
- A Compact Model of Program Window in HfO x RRAM Devices for Conductive Filament Characteristics Analysis (58 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
His primary areas of study are Dielectric, Optoelectronics, Resistive random-access memory, Voltage and Electronic engineering.
His Dielectric study combines topics in areas such as Threshold voltage, Stress, Quantum tunnelling and Analytical chemistry.
His study in Threshold voltage is interdisciplinary in nature, drawing from both Atomic layer deposition and MOSFET.
In his research on the topic of Stress, Grain boundary is strongly related with Condensed matter physics.
His Optoelectronics research includes themes of Layer, Substrate and Tin.
His research in High-κ dielectric tackles topics such as Metal gate which are related to areas like Breakdown voltage.
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