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Gennadi Bersuker

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 61 1568 1498 638 594 539 12294
Materials Science 63 6234 6030 1589 1483 548 13290

Gennadi Bersuker publications per year

The chart shows the history of publications by Gennadi Bersuker between 1979 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Gennadi Bersuker published across 46 years, from 1979 to 2024, averaging 12.4 papers a year. Output peaked at 71 publications in 2006. 3 of the 569 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1979 to 2024. Vertical axis: number of publications, 0 to 71. Peak 71 publications in 2006. 1979: 2 publications 1980: 0 publications 1981: 1 publication 1982: 0 publications 1983: 0 publications 1984: 3 publications 1985: 0 publications 1986: 0 publications 1987: 0 publications 1988: 1 publication 1989: 1 publication 1990: 3 publications 1991: 2 publications 1992: 0 publications 1993: 1 publication 1994: 1 publication 1995: 1 publication 1996: 4 publications 1997: 8 publications 1998: 4 publications 1999: 8 publications 2000: 5 publications 2001: 7 publications 2002: 7 publications 2003: 12 publications 2004: 33 publications 2005: 52 publications 2006: 71 publications 2007: 41 publications 2008: 39 publications 2009: 33 publications 2010: 29 publications 2011: 47 publications 2012: 35 publications 2013: 35 publications 2014: 31 publications 2015: 17 publications 2016: 7 publications 2017: 5 publications 2018: 3 publications 2019: 7 publications 2020: 4 publications 2021: 2 publications 2022: 4 publications 2023: 2 publications 2024: 1 publication
1979 2024

569 publications in total across all disciplines

View publications per year as a table
Gennadi Bersuker: publications per year, 1979 to 2024
Year Publications
1979 2
1980 0
1981 1
1982 0
1983 0
1984 3
1985 0
1986 0
1987 0
1988 1
1989 1
1990 3
1991 2
1992 0
1993 1
1994 1
1995 1
1996 4
1997 8
1998 4
1999 8
2000 5
2001 7
2002 7
2003 12
2004 33
2005 52
2006 71
2007 41
2008 39
2009 33
2010 29
2011 47
2012 35
2013 35
2014 31
2015 17
2016 7
2017 5
2018 3
2019 7
2020 4
2021 2
2022 4
2023 2
2024 1
Total 569
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Gennadi Bersuker publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gennadi Bersuker sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 534–553 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 539 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92 539
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Gennadi Bersuker D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gennadi Bersuker sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 61 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 61 D-Index — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93 61
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Gennadi Bersuker is affiliated with The Aerospace Corporation in the United States and has contributed extensively to research in engineering and materials science. Their work spans multiple subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The scientist's primary research topics include advanced memory and neural computing, near-field optical microscopy, ferroelectric and negative capacitance devices, integrated circuits and semiconductor failure analysis, force microscopy techniques and applications, carbon nanotubes in composites, and MXene and MAX phase materials.

Gennadi Bersuker's recent publications cover a range of subjects related to materials science and engineering, with a focus on electrical properties and nanoscale phenomena. Notable papers include:

  • "Ultra-fast switching memristors based on two-dimensional materials," 2024, Nature Communications
  • "Detection of Subsurface, Nanometer-Scale Crystallographic Defects by Nonlinear Light Scattering and Localization," 2021, Advanced Optical Materials
  • "Atomistic Modeling of the Electrical Conductivity of Single-Walled Carbon Nanotube Junctions," 2022, physica status solidi (RRL) - Rapid Research Letters
  • "Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • "Overcoming Limitations in Evaluation of Memristor Technologies for Neural Networks," 2020, ECS Meeting Abstracts

Frequent publication venues for Bersuker include arXiv (Cornell University), Nature Communications, Advanced Optical Materials, physica status solidi (RRL) - Rapid Research Letters, and the 2022 IEEE International Reliability Physics Symposium (IRPS).

Their collaboration network features recurring co-authors such as Dmitry Veksler, Farbod Shafiei, Tommaso Orzali, Alexey Vert, and Man Hoi Wong, each having co-authored multiple papers with Bersuker.

Best Publications

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

    J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker

  • Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

    J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker

  • A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

    L. Vandelli;A. Padovani;L. Larcher;R. G. Southwick

  • Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory

    D. Muñoz Ramo;J. L. Gavartin;A. L. Shluger;G. Bersuker

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

    J. L. Gavartin;A. L. Shluger;Adam S. Foster;G. I. Bersuker

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2.

    D. Muñoz Ramo;A. L. Shluger;J. L. Gavartin;G. Bersuker

  • The role of nitrogen related defects in high-k dielectric oxides: Density functional studies

    J. L. Gavartin;A. S. Foster;G. I. Bersuker;A. L. Shluger

  • Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

    P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki

  • Microscopic Modeling of HfO x RRAM Operations: From Forming to Switching

    Andrea Padovani;Luca Larcher;Onofrio Pirrotta;Luca Vandelli

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Grain boundary mediated leakage current in polycrystalline HfO2 films

    K. McKenna;A. Shluger;V. Iglesias;M. Porti

  • Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

    G. Bersuker;J. Sim;Chang Seo Park;C. Young

  • Theoretical study of the insulator/insulator interface: Band alignment at theSiO2∕HfO2junction

    Onise Sharia;Alexander A. Demkov;Gennadi Bersuker;Byoung Hun Lee

  • Dielectrics for future transistors

    G Bersuker;P Zeitzoff;G Brown;H.R Huff

Frequent Co-Authors

Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Rino Choi
Rino Choi Inha University
Prashant Majhi
Prashant Majhi Intel (United States)
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Alexander L. Shluger
Alexander L. Shluger University College London
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia

External Links

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Related Online Degrees & Career Pathways

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Those interested in formal qualifications can consider a bachelor degree in project management, which develops expertise in managing engineering projects from concept to completion. The combination of technical and managerial skills opens doors to leadership roles in tech-driven industries.

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Additionally, branching into areas like instructional design can expand teaching and training opportunities in engineering contexts. Affordable credentials, such as instructional design master's programs, prepare graduates to develop effective educational materials for technical audiences.

Best Scientists Citing Gennadi Bersuker

Luca Larcher

Luca Larcher

University of Modena and Reggio Emilia

Publications: 84

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 78

Alexander L. Shluger

Alexander L. Shluger

University College London

Publications: 49

Paolo Pavan

Paolo Pavan

University of Modena and Reggio Emilia

Publications: 47

Ben Kaczer

Ben Kaczer

Imec

Publications: 47

Robin Degraeve

Robin Degraeve

Imec

Publications: 45

Mario Lanza

Mario Lanza

National University of Singapore

Publications: 45

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 44

Byoung Hun Lee

Byoung Hun Lee

Pohang University of Science and Technology

Publications: 42

Gerald Lucovsky

Gerald Lucovsky

North Carolina State University

Publications: 39

John Robertson

John Robertson

University of Cambridge

Publications: 39

Robert M. Wallace

Robert M. Wallace

The University of Texas at Dallas

Publications: 35

Thomas Mikolajick

Thomas Mikolajick

TU Dresden

Publications: 33

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 33

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Michel Bosman

National University of Singapore

Publications: 32

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Ting-Chang Chang

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