World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
12294
World Ranking
1568
National Ranking
637

Materials Science

D-Index
63
Citations
13290
World Ranking
6236
National Ranking
1591

Overview

Gennadi Bersuker is affiliated with The Aerospace Corporation in the United States and has contributed extensively to research in engineering and materials science. Their work spans multiple subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The scientist's primary research topics include advanced memory and neural computing, near-field optical microscopy, ferroelectric and negative capacitance devices, integrated circuits and semiconductor failure analysis, force microscopy techniques and applications, carbon nanotubes in composites, and MXene and MAX phase materials.

Gennadi Bersuker's recent publications cover a range of subjects related to materials science and engineering, with a focus on electrical properties and nanoscale phenomena. Notable papers include:

  • "Ultra-fast switching memristors based on two-dimensional materials," 2024, Nature Communications
  • "Detection of Subsurface, Nanometer-Scale Crystallographic Defects by Nonlinear Light Scattering and Localization," 2021, Advanced Optical Materials
  • "Atomistic Modeling of the Electrical Conductivity of Single-Walled Carbon Nanotube Junctions," 2022, physica status solidi (RRL) - Rapid Research Letters
  • "Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • "Overcoming Limitations in Evaluation of Memristor Technologies for Neural Networks," 2020, ECS Meeting Abstracts

Frequent publication venues for Bersuker include arXiv (Cornell University), Nature Communications, Advanced Optical Materials, physica status solidi (RRL) - Rapid Research Letters, and the 2022 IEEE International Reliability Physics Symposium (IRPS).

Their collaboration network features recurring co-authors such as Dmitry Veksler, Farbod Shafiei, Tommaso Orzali, Alexey Vert, and Man Hoi Wong, each having co-authored multiple papers with Bersuker.

Best Publications

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

    J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker

  • Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

    J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker

  • A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

    L. Vandelli;A. Padovani;L. Larcher;R. G. Southwick

  • Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory

    D. Muñoz Ramo;J. L. Gavartin;A. L. Shluger;G. Bersuker

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

    J. L. Gavartin;A. L. Shluger;Adam S. Foster;G. I. Bersuker

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2.

    D. Muñoz Ramo;A. L. Shluger;J. L. Gavartin;G. Bersuker

  • The role of nitrogen related defects in high-k dielectric oxides: Density functional studies

    J. L. Gavartin;A. S. Foster;G. I. Bersuker;A. L. Shluger

  • Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

    P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki

  • Microscopic Modeling of HfO x RRAM Operations: From Forming to Switching

    Andrea Padovani;Luca Larcher;Onofrio Pirrotta;Luca Vandelli

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Grain boundary mediated leakage current in polycrystalline HfO2 films

    K. McKenna;A. Shluger;V. Iglesias;M. Porti

  • Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

    G. Bersuker;J. Sim;Chang Seo Park;C. Young

  • Theoretical study of the insulator/insulator interface: Band alignment at theSiO2∕HfO2junction

    Onise Sharia;Alexander A. Demkov;Gennadi Bersuker;Byoung Hun Lee

  • Dielectrics for future transistors

    G Bersuker;P Zeitzoff;G Brown;H.R Huff

Frequent Co-Authors

Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Rino Choi
Rino Choi Inha University
Prashant Majhi
Prashant Majhi Intel (United States)
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Alexander L. Shluger
Alexander L. Shluger University College London
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia

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