World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
37027
World Ranking
786
National Ranking
341

Materials Science

D-Index
77
Citations
41362
World Ranking
3051
National Ranking
851

Sanjay K. Banerjee publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sanjay K. Banerjee sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 824 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sanjay K. Banerjee D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sanjay K. Banerjee sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 72 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1996 - IEEE Fellow For contributions to physics of semiconductor devices used in three-dimensional integrated circuits, and low temperature silicon-germanium epitaxy using non-thermally-assisted chemical vapor deposition.

Overview

Sanjay K. Banerjee is affiliated with The University of Texas at Austin in the United States. Their research spans core developments in materials science and engineering, focusing significantly on electrical and electronic engineering as well as materials chemistry.

The main fields of study include:

  • Materials Science
  • Engineering

Subfields of study are characterized by:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Key research topics explored are:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Chalcogenide Semiconductor Thin Films

Frequent coauthors collaborating with Banerjee include:

  • Leonard F. Register
  • Anupam Roy
  • Sayema Chowdhury
  • Matthew Disiena
  • Deji Akinwande

Publication venues frequently featuring their work are:

  • Journal of Applied Physics
  • Nature Communications
  • ACS Applied Materials & Interfaces
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)

Recent papers by Banerjee include the following:

  • Ultra-fast switching memristors based on two-dimensional materials (2024) - Nature Communications
  • A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon (2020) - Advanced Materials
  • Stability Improvement of Perovskite Solar Cells by Compositional and Interfacial Engineering (2021) - Chemistry of Materials
  • Application of Perovskite Quantum Dots as an Absorber in Perovskite Solar Cells (2021) - Angewandte Chemie International Edition
  • Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS2 (2020) - Advanced Materials

In terms of professional recognition, Banerjee has been named an IEEE Fellow in 1996 with a citation for contributions to semiconductor device physics, specifically related to three-dimensional integrated circuits and low temperature silicon-germanium epitaxy developed through non-thermally-assisted chemical vapor deposition.

Best Publications

  • Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

    Xuesong Li;Weiwei Cai;Jinho An;Seyoung Kim

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Evidence for moiré excitons in van der Waals heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

    Seyoung Kim;Junghyo Nah;Insun Jo;Davood Shahrjerdi

  • Ab initio theory of gate induced gaps in graphene bilayers

    Hongki Min;Bhagawan Sahu;Sanjay K. Banerjee;A. H. MacDonald

  • van der Waals Heterostructures with High Accuracy Rotational Alignment.

    Kyounghwan Kim;Matthew Yankowitz;Babak Fallahazad;Sangwoo Kang

  • Moir'e Excitons in Van der Waals Heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Antihepatotoxic effects of major diterpenoid constituents of Andrographis paniculata

    Aruna Kapil;I.B. Koul;S.K. Banerjee;B.D. Gupta

  • Anomalous leakage current in LPCVD PolySilicon MOSFET's

    J.G. Fossum;A. Ortiz-Conde;H. Shichijo;S.K. Banerjee

  • High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

    Hema C. P. Movva;Amritesh Rai;Sangwoo Kang;Kyounghwan Kim

  • Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

    C. Tsai;K. H. Li;D. S. Kinosky;R. Z. Qian

  • Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

    S.K. Banerjee;L.F. Register;E. Tutuc;D. Reddy

  • Thinnest Nonvolatile Memory Based on Monolayer h-BN.

    Xiaohan Wu;Ruijing Ge;Po An Chen;Po An Chen;Harry Chou

  • MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si

    Wen-Jie Qi;Renee Nieh;Laegu Kang;Yongjoo Jeon

  • Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    Anupam Roy;Hema C. P. Movva;Biswarup Satpati;Kyounghwan Kim

  • Coulomb drag of massless fermions in graphene

    Seyoung Kim;Insun Jo;Junghyo Nah;Z. Yao

  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

    S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan

  • Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

    Amritesh Rai;Amithraj Valsaraj;Hema C.P. Movva;Anupam Roy

  • Graphene field-effect transistors

    Dharmendar Reddy;Leonard F Register;Gary D Carpenter;Sanjay K Banerjee

  • Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

    Chris M. Corbet;Connor McClellan;Amritesh Rai;Sushant Sudam Sonde

Frequent Co-Authors

Emanuel Tutuc
Emanuel Tutuc The University of Texas at Austin
Davood Shahrjerdi
Davood Shahrjerdi New York University
Deji Akinwande
Deji Akinwande The University of Texas at Austin
Allan H. MacDonald
Allan H. MacDonald The University of Texas at Austin
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Junghyo Nah
Junghyo Nah Chungnam National University
Prashant Majhi
Prashant Majhi Intel (United States)
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Gyeong S. Hwang
Gyeong S. Hwang The University of Texas at Austin

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Related Online Degrees & Career Pathways

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