1996 - IEEE Fellow For contributions to physics of semiconductor devices used in three-dimensional integrated circuits, and low temperature silicon-germanium epitaxy using non-thermally-assisted chemical vapor deposition.
Sanjay K. Banerjee mainly investigates Optoelectronics, Transistor, Field-effect transistor, Condensed matter physics and MOSFET. His studies in Optoelectronics integrate themes in fields like Electrical engineering, Graphene and Capacitor. His biological study spans a wide range of topics, including CMOS, Nanotechnology, Semiconductor and Contact resistance.
His study in the fields of Heterojunction under the domain of Condensed matter physics overlaps with other disciplines such as Bilayer. As a member of one scientific family, Sanjay K. Banerjee mostly works in the field of MOSFET, focusing on Electronic engineering and, on occasion, High-κ dielectric. His Chemical vapor deposition research incorporates elements of Graphene nanoribbons, Mineralogy and Graphene oxide paper.
His scientific interests lie mostly in Optoelectronics, Silicon, Condensed matter physics, MOSFET and Chemical vapor deposition. The study incorporates disciplines such as Field-effect transistor, Transistor, Electronic engineering and Electrical engineering in addition to Optoelectronics. The concepts of his Silicon study are interwoven with issues in Annealing, Ion implantation, Substrate and Doping.
His Condensed matter physics research includes themes of Density functional theory and Graphene. His MOSFET research incorporates themes from Metal gate, Electron mobility, Leakage, Dielectric and Gate dielectric. He has researched Chemical vapor deposition in several fields, including Thin film, Epitaxy and Analytical chemistry.
His primary scientific interests are in Condensed matter physics, Optoelectronics, Monolayer, Nanotechnology and Transistor. The Optoelectronics study combines topics in areas such as Field-effect transistor, Electrical engineering and Electrode. His studies deal with areas such as Chemical physics, Scanning tunneling microscope, Chemical vapor deposition and Density functional theory as well as Monolayer.
His studies examine the connections between Chemical vapor deposition and genetics, as well as such issues in Thin film, with regards to Nucleation. His Heterojunction research includes elements of Electronic band structure and Graphene. Sanjay K. Banerjee has included themes like Layer and Coupling in his Graphene study.
Sanjay K. Banerjee mostly deals with Optoelectronics, Nanotechnology, Condensed matter physics, Monolayer and Chemical vapor deposition. Sanjay K. Banerjee interconnects Field-effect transistor, Transistor, Electrode and Graphene in the investigation of issues within Optoelectronics. His research integrates issues of Artificial neural network, Volt, Oxide and Electron mobility in his study of Nanotechnology.
His Condensed matter physics research is multidisciplinary, incorporating elements of Electron, Magnetic field, Magnetoresistance and Electric field. His Monolayer study combines topics from a wide range of disciplines, such as Chemical physics and Nanoelectronics. His Chemical vapor deposition research is multidisciplinary, relying on both Thin film, Raman spectroscopy, Electron backscatter diffraction, Molybdenum disulfide and Band gap.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li;Weiwei Cai;Jinho An;Seyoung Kim.
Electronics based on two-dimensional materials
Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios.
Nature Nanotechnology (2014)
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
Seyoung Kim;Junghyo Nah;Insun Jo;Davood Shahrjerdi.
Applied Physics Letters (2009)
Ab initio theory of gate induced gaps in graphene bilayers
Hongki Min;Bhagawan Sahu;Sanjay K. Banerjee;A. H. MacDonald.
Physical Review B (2007)
Moir'e Excitons in Van der Waals Heterostructures
Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu.
arXiv: Mesoscale and Nanoscale Physics (2018)
Evidence for moiré excitons in van der Waals heterostructures
Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu.
Anomalous leakage current in LPCVD PolySilicon MOSFET's
J.G. Fossum;A. Ortiz-Conde;H. Shichijo;S.K. Banerjee.
IEEE Transactions on Electron Devices (1985)
Correlation between silicon hydride species and the photoluminescence intensity of porous silicon
C. Tsai;K. H. Li;D. S. Kinosky;R. Z. Qian.
Applied Physics Letters (1992)
van der Waals Heterostructures with High Accuracy Rotational Alignment.
Kyounghwan Kim;Matthew Yankowitz;Babak Fallahazad;Sangwoo Kang.
Nano Letters (2016)
Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device
S.K. Banerjee;L.F. Register;E. Tutuc;D. Reddy.
IEEE Electron Device Letters (2009)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: