World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
37027
World Ranking
786
National Ranking
340

Materials Science

D-Index
77
Citations
41362
World Ranking
3053
National Ranking
853

Research.com Recognitions

  • 1996 - IEEE Fellow For contributions to physics of semiconductor devices used in three-dimensional integrated circuits, and low temperature silicon-germanium epitaxy using non-thermally-assisted chemical vapor deposition.

Overview

Sanjay K. Banerjee is affiliated with The University of Texas at Austin in the United States. Their research spans core developments in materials science and engineering, focusing significantly on electrical and electronic engineering as well as materials chemistry.

The main fields of study include:

  • Materials Science
  • Engineering

Subfields of study are characterized by:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Key research topics explored are:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Chalcogenide Semiconductor Thin Films

Frequent coauthors collaborating with Banerjee include:

  • Leonard F. Register
  • Anupam Roy
  • Sayema Chowdhury
  • Matthew Disiena
  • Deji Akinwande

Publication venues frequently featuring their work are:

  • Journal of Applied Physics
  • Nature Communications
  • ACS Applied Materials & Interfaces
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)

Recent papers by Banerjee include the following:

  • Ultra-fast switching memristors based on two-dimensional materials (2024) - Nature Communications
  • A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon (2020) - Advanced Materials
  • Stability Improvement of Perovskite Solar Cells by Compositional and Interfacial Engineering (2021) - Chemistry of Materials
  • Application of Perovskite Quantum Dots as an Absorber in Perovskite Solar Cells (2021) - Angewandte Chemie International Edition
  • Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS2 (2020) - Advanced Materials

In terms of professional recognition, Banerjee has been named an IEEE Fellow in 1996 with a citation for contributions to semiconductor device physics, specifically related to three-dimensional integrated circuits and low temperature silicon-germanium epitaxy developed through non-thermally-assisted chemical vapor deposition.

Best Publications

  • Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

    Xuesong Li;Weiwei Cai;Jinho An;Seyoung Kim

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Evidence for moiré excitons in van der Waals heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

    Seyoung Kim;Junghyo Nah;Insun Jo;Davood Shahrjerdi

  • Ab initio theory of gate induced gaps in graphene bilayers

    Hongki Min;Bhagawan Sahu;Sanjay K. Banerjee;A. H. MacDonald

  • van der Waals Heterostructures with High Accuracy Rotational Alignment.

    Kyounghwan Kim;Matthew Yankowitz;Babak Fallahazad;Sangwoo Kang

  • Moir'e Excitons in Van der Waals Heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Antihepatotoxic effects of major diterpenoid constituents of Andrographis paniculata

    Aruna Kapil;I.B. Koul;S.K. Banerjee;B.D. Gupta

  • Anomalous leakage current in LPCVD PolySilicon MOSFET's

    J.G. Fossum;A. Ortiz-Conde;H. Shichijo;S.K. Banerjee

  • High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

    Hema C. P. Movva;Amritesh Rai;Sangwoo Kang;Kyounghwan Kim

  • Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

    C. Tsai;K. H. Li;D. S. Kinosky;R. Z. Qian

  • Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

    S.K. Banerjee;L.F. Register;E. Tutuc;D. Reddy

  • Thinnest Nonvolatile Memory Based on Monolayer h-BN.

    Xiaohan Wu;Ruijing Ge;Po An Chen;Po An Chen;Harry Chou

  • MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si

    Wen-Jie Qi;Renee Nieh;Laegu Kang;Yongjoo Jeon

  • Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    Anupam Roy;Hema C. P. Movva;Biswarup Satpati;Kyounghwan Kim

  • Coulomb drag of massless fermions in graphene

    Seyoung Kim;Insun Jo;Junghyo Nah;Z. Yao

  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

    S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan

  • Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

    Amritesh Rai;Amithraj Valsaraj;Hema C.P. Movva;Anupam Roy

  • Graphene field-effect transistors

    Dharmendar Reddy;Leonard F Register;Gary D Carpenter;Sanjay K Banerjee

  • Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

    Chris M. Corbet;Connor McClellan;Amritesh Rai;Sushant Sudam Sonde

Frequent Co-Authors

Emanuel Tutuc
Emanuel Tutuc The University of Texas at Austin
Davood Shahrjerdi
Davood Shahrjerdi New York University
Deji Akinwande
Deji Akinwande The University of Texas at Austin
Allan H. MacDonald
Allan H. MacDonald The University of Texas at Austin
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Junghyo Nah
Junghyo Nah Chungnam National University
Prashant Majhi
Prashant Majhi Intel (United States)
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Gyeong S. Hwang
Gyeong S. Hwang The University of Texas at Austin

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