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Materials Science
China
2022

D-Index & Metrics

Physics

D-Index
125
Citations
78643
World Ranking
655
National Ranking
361

Feng Wang publication distribution in Physics in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Feng Wang sits on this spectrum.

103–122 publications: 7 scientists 123–142 publications: 10 scientists 143–162 publications: 31 scientists 163–182 publications: 35 scientists 183–202 publications: 53 scientists 203–222 publications: 81 scientists 223–242 publications: 85 scientists 243–262 publications: 112 scientists 263–282 publications: 114 scientists 283–302 publications: 126 scientists 303–322 publications: 136 scientists 323–342 publications: 162 scientists 343–362 publications: 155 scientists 363–382 publications: 156 scientists 383–402 publications: 134 scientists 403–422 publications: 145 scientists 423–442 publications: 147 scientists 443–462 publications: 131 scientists 463–482 publications: 131 scientists 483–502 publications: 116 scientists 503–522 publications: 106 scientists 523–542 publications: 103 scientists 543–562 publications: 87 scientists 563–582 publications: 84 scientists 583–602 publications: 94 scientists 603–622 publications: 70 scientists 623–642 publications: 76 scientists 643–662 publications: 60 scientists 663–682 publications: 54 scientists 683–702 publications: 60 scientists 703–722 publications: 48 scientists 723–742 publications: 64 scientists 743–762 publications: 48 scientists 763–782 publications: 37 scientists 783–802 publications: 43 scientists 803–822 publications: 34 scientists 823–842 publications: 36 scientists 843–862 publications: 32 scientists 863–882 publications: 32 scientists 883–902 publications: 31 scientists 903–922 publications: 25 scientists 923–942 publications: 15 scientists 943–962 publications: 24 scientists 963–982 publications: 13 scientists 983–1,002 publications: 21 scientists 1,003–1,022 publications: 21 scientists 1,023–1,042 publications: 16 scientists 1,043–1,062 publications: 9 scientists 1,063–1,082 publications: 19 scientists 1,083–1,102 publications: 11 scientists 1,103–1,122 publications: 17 scientists 1,123–1,142 publications: 11 scientists 1,143–1,162 publications: 7 scientists 1,163–1,182 publications: 4 scientists 1,183–1,202 publications: 10 scientists 1,203–1,222 publications: 8 scientists 1,223–1,242 publications: 16 scientists 1,243–1,262 publications: 4 scientists 1,263–1,282 publications: 10 scientists 1,283–1,302 publications: 5 scientists 1,303–1,322 publications: 7 scientists 1,323–1,342 publications: 4 scientists 1,343–1,362 publications: 8 scientists 1,363–1,382 publications: 6 scientists 1,383–1,402 publications: 7 scientists 1,403–1,422 publications: 3 scientists 1,423–1,442 publications: 4 scientists 1,443–1,462 publications: 4 scientists 1,463–1,468 publications: 3 scientists 1,469+ publications: 100 scientists
103 publications 1,469+

This scientist: 681 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,469 publications or more.

Feng Wang D-index placement in Physics in 2026

The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Feng Wang sits on this spectrum.

70–71 D-Index: 76 scientists 72–73 D-Index: 110 scientists 74–75 D-Index: 143 scientists 76–77 D-Index: 153 scientists 78–79 D-Index: 144 scientists 80–81 D-Index: 167 scientists 82–83 D-Index: 167 scientists 84–85 D-Index: 166 scientists 86–87 D-Index: 132 scientists 88–89 D-Index: 155 scientists 90–91 D-Index: 134 scientists 92–93 D-Index: 137 scientists 94–95 D-Index: 102 scientists 96–97 D-Index: 112 scientists 98–99 D-Index: 110 scientists 100–101 D-Index: 116 scientists 102–103 D-Index: 97 scientists 104–105 D-Index: 103 scientists 106–107 D-Index: 87 scientists 108–109 D-Index: 90 scientists 110–111 D-Index: 67 scientists 112–113 D-Index: 78 scientists 114–115 D-Index: 75 scientists 116–117 D-Index: 67 scientists 118–119 D-Index: 69 scientists 120–121 D-Index: 60 scientists 122–123 D-Index: 59 scientists 124–125 D-Index: 53 scientists 126–127 D-Index: 42 scientists 128–129 D-Index: 41 scientists 130–131 D-Index: 33 scientists 132–133 D-Index: 32 scientists 134–135 D-Index: 45 scientists 136–137 D-Index: 19 scientists 138–139 D-Index: 24 scientists 140–141 D-Index: 28 scientists 142–143 D-Index: 31 scientists 144–145 D-Index: 22 scientists 146–147 D-Index: 20 scientists 148–149 D-Index: 12 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 24 scientists 154–155 D-Index: 23 scientists 156–157 D-Index: 15 scientists 158–159 D-Index: 15 scientists 160–161 D-Index: 11 scientists 162–163 D-Index: 17 scientists 164–165 D-Index: 12 scientists 166–167 D-Index: 11 scientists 168–169 D-Index: 9 scientists 170–171 D-Index: 9 scientists 172–173 D-Index: 11 scientists 174–175 D-Index: 4 scientists 176–177 D-Index: 8 scientists 178–179 D-Index: 5 scientists 180–181 D-Index: 3 scientists 182–183 D-Index: 4 scientists 184 D-Index: 4 scientists 185+ D-Index: 99 scientists
70 D-Index 185+

This scientist: 125 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 185 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in China Leader Award

Overview

Feng Wang is affiliated with the University of California, Berkeley in the United States. Their research primarily covers the fields of Materials Science and Engineering, with substantial contributions in related subfields including Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, and Biomedical Engineering.

Their scientific work encompasses a variety of main topics such as 2D Materials and Applications, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Multiferroics and related materials, MXene and MAX Phase Materials, Perovskite Materials and Applications, and Graphene research and applications.

Feng Wang has published frequently in several reputable journals and venues. Notable publication venues include:

  • Nano Letters
  • Advanced Materials
  • SSRN Electronic Journal
  • Nature Communications
  • Small

Among their recent publications are the following:

  • Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions, 2020, Advanced Materials
  • Portable and multiplexed lateral flow immunoassay reader based on SERS for highly sensitive point-of-care testing, 2020, Biosensors and Bioelectronics
  • Two-Dimensional Unipolar Memristors with Logic and Memory Functions, 2020, Nano Letters
  • Van der Waals Ferroelectrics: Theories, Materials, and Device Applications, 2023, Advanced Materials
  • Two-dimensional multiferroic material of metallic p-doped SnSe, 2022, Nature Communications

The scientist has collaborated frequently with a group of coauthors including Zhenxing Wang, Xueying Zhan, Jun He, and Yanrong Wang. Among these, Zhenxing Wang and Xueying Zhan are the most frequent collaborators with 28 joint publications each, followed by Jun He with 19 and 16 collaborations noted under different author identifiers, and Yanrong Wang with 14 joint works.

Best Publications

  • Emerging Photoluminescence in Monolayer MoS2

    Andrea Splendiani;Liang Sun;Yuanbo Zhang;Tianshu Li

  • Direct observation of a widely tunable bandgap in bilayer graphene

    Yuanbo Zhang;Tsung-Ta Tang;Tsung-Ta Tang;Caglar Girit;Zhao Hao

  • A graphene-based broadband optical modulator

    Ming Liu;Xiaobo Yin;Erick Ulin-Avila;Baisong Geng

  • Graphene plasmonics for tunable terahertz metamaterials

    Long Ju;Baisong Geng;Baisong Geng;Jason Horng;Caglar Girit

  • Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures

    Xiaoping Hong;Jonghwan Kim;Su Fei Shi;Yu Zhang

  • Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

    Miguel M. Ugeda;Aaron J. Bradley;Su-Fei Shi;Felipe H. da Jornada

  • Gate-Variable Optical Transitions in Graphene

    Feng Wang;Yuanbo Zhang;Chuanshan Tian;Caglar Girit

  • Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

    Miguel M. Ugeda;Aaron J. Bradley;Su-Fei Shi;Felipe H. da Jornada

  • The optical resonances in carbon nanotubes arise from excitons

    Feng Wang;Gordana Dukovic;Louis E. Brus;Tony F. Heinz

  • Conduction at domain walls in oxide multiferroics

    J. Seidel;L. W. Martin;L. W. Martin;Q. He;Q. Zhan

  • Optical modulators with 2D layered materials

    Zhipei Sun;Amos Martinez;Feng Wang

  • Observation of moiré excitons in WSe2/WS2 heterostructure superlattices.

    Chenhao Jin;Emma C. Regan;Aiming Yan;Aiming Yan;M. Iqbal Bakti Utama

  • Optical spectroscopy of graphene: From the far infrared to the ultraviolet

    Kin Fai Mak;Long Ju;Feng Wang;Feng Wang;Tony F. Heinz

  • Direct observation of the layer-dependent electronic structure in phosphorene

    Likai Li;Jonghwan Kim;Chenhao Jin;Guo Jun Ye

  • Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

    Kaihui Liu;Liming Zhang;Ting Cao;Chenhao Jin

  • Topological valley transport at bilayer graphene domain walls

    Long Ju;Zhiwen Shi;Nityan Nair;Yinchuan Lv

  • Controlling inelastic light scattering quantum pathways in graphene

    Chi-Fan Chen;Cheol-Hwan Park;Bryan W. Boudouris;Bryan W. Boudouris;Jason Horng

  • General Properties of Local Plasmons in Metal Nanostructures

    Feng Wang;Ron Shen

  • Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

    Emma C. Regan;Danqing Wang;Chenhao Jin;M. Iqbal Bakti Utama

  • Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

    Aaron Bradley;Miguel M. Ugeda;Su-Fei Shi;Felipe H. da Jornada

Frequent Co-Authors

Alex Zettl
Alex Zettl University of California, Berkeley
Michael F. Crommie
Michael F. Crommie University of California, Berkeley
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Tony F. Heinz
Tony F. Heinz Stanford University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Jun He
Jun He Nottingham Trent University
Steven G. Louie
Steven G. Louie University of California, Berkeley
Louis E. Brus
Louis E. Brus Columbia University
Zhenxing Wang
Zhenxing Wang National Center for Nanoscience and Technology, China
Lei Yin
Lei Yin Wuhan University

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