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Materials Science
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2026

D-Index & Metrics

Best Scientists

D-Index
230
Citations
249780
World Ranking
93
National Ranking
2

Materials Science

D-Index
243
Citations
263608
World Ranking
8
National Ranking
1

Takashi Taniguchi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Takashi Taniguchi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 3,731 publications — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Takashi Taniguchi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Takashi Taniguchi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 243 D-Index — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Materials Science in Japan Leader Award
  • 2025 - Research.com Best Scientists Award
  • 2025 - Research.com Materials Science in Japan Leader Award
  • 2023 - Research.com Materials Science in Japan Leader Award
  • 2023 - Research.com Physics in Japan Leader Award
  • 2022 - Research.com Materials Science in Japan Leader Award
  • 2022 - Research.com Physics in Japan Leader Award

Overview

Takashi Taniguchi is affiliated with the National Institute for Materials Science in Japan and has made extensive contributions across multiple fields of study, primarily in materials science, physics and astronomy, and engineering. Their research spans a significant number of publications, with particular emphasis on materials chemistry, atomic and molecular physics, electrical and electronic engineering, biomedical engineering, and condensed matter physics.

Their work addresses key topics including graphene research and applications, 2D materials and applications, quantum and electron transport phenomena, topological materials and phenomena, perovskite materials and applications, MXene and MAX phase materials, and diamond and carbon-based materials research.

Takashi Taniguchi has authored numerous papers, with some recent prominent examples being:

  • Correlated electronic phases in twisted bilayer transition metal dichalcogenides, 2020, Nature Materials
  • Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices, 2020, Nature
  • Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene, 2021, Nature
  • Correlated states in twisted double bilayer graphene, 2020, Nature Physics
  • Signatures of fractional quantum anomalous Hall states in twisted MoTe2, 2023, Nature

The frequent collaborators include:

  • Kenji Watanabe
  • James Hone
  • Sefaattin Tongay
  • Feng Wang
  • Pablo Jarillo-Herrero

Taniguchi's work is frequently published in journals such as:

  • Nano Letters
  • Nature Communications
  • Nature
  • Physical Review Letters
  • Nature Physics

The breadth of Taniguchi's research covers a large volume of publications, particularly 1555 in materials science, 951 in physics and astronomy, and 628 in engineering, reflecting a multidisciplinary approach to scientific inquiry.

Best Publications

  • Unconventional superconductivity in magic-angle graphene superlattices

    Yuan Cao;Valla Fatemi;Shiang Fang;Kenji Watanabe

  • Boron nitride substrates for high-quality graphene electronics

    C. R. Dean;A. F. Young;I. Meric;C. Lee

  • Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

    Yuan Cao;Valla Fatemi;Ahmet Demir;Shiang Fang

  • Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

    Kenji Watanabe;Takashi Taniguchi;Hisao Kanda

  • One-dimensional electrical contact to a two-dimensional material.

    L. Wang;I. Meric;P. Y. Huang;Q. Gao

  • Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices

    C. R. Dean;L. Wang;P. Maher;C. Forsythe

  • Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure

    B. Hunt;J. D. Sanchez-Yamagishi;A. F. Young;M. Yankowitz

  • Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

    Alexander S. Mayorov;Roman V. Gorbachev;Sergey V. Morozov;Liam Britnell

  • Light-emitting diodes by band-structure engineering in van der Waals heterostructures

    Freddie Withers;O {Del Pozo-Zamudio};A. Mishchenko;A. P. Rooney

  • Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

    Jason S. Ross;Philip Klement;Aaron M. Jones;Nirmal J. Ghimire

  • Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene

    Xiaobo Lu;Petr Stepanov;Wei Yang;Ming Xie

  • Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

    F. Withers;O. Del Pozo-Zamudio;A. Mishchenko;A. P. Rooney

  • Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

    Jiamin Xue;Javier Sanchez-Yamagishi;Daniel S. Bulmash;Philippe Jacquod

  • Tuning superconductivity in twisted bilayer graphene

    Matthew Yankowitz;Shaowen Chen;Hryhoriy Polshyn;K. Watanabe

  • Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

    Xu Cui;Gwan-Hyoung Lee;Young Duck Kim;Ghidewon Arefe

  • Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

    Yoichi Kubota;Kenji Watanabe;Osamu Tsuda;Takashi Taniguchi

  • STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

    Jiamin Xue;Javier Sanchez-Yamagishi;Danny Bulmash;Philippe Jacquod

  • Tunable Phonon Polaritons in Atomically Thin van der Waals Crystals of Boron Nitride

    S. Dai;Z. Fei;Q. Ma;A. S. Rodin

  • Evidence for moiré excitons in van der Waals heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Emergence of superlattice Dirac points in graphene on hexagonal boron nitride

    Matthew Yankowitz;Jiamin Xue;Daniel Cormode;Javier D. Sanchez-Yamagishi

  • Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

    Gwan Hyoung Lee;Young Jun Yu;Young Jun Yu;Xu Cui;Nicholas Petrone

  • Tuning superconductivity in twisted bilayer graphene.

    Matthew Yankowitz;Shaowen Chen;Hryhoriy Polshyn;Yuxuan Zhang

  • Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene

    Aaron L. Sharpe;Aaron L. Sharpe;Eli J. Fox;Eli J. Fox;Arthur W. Barnard;Joe Finney

Frequent Co-Authors

Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Philip Kim
Philip Kim Harvard University
James Hone
James Hone Columbia University
Cory Dean
Cory Dean Columbia University
Feng Wang
Feng Wang University of California, Berkeley
Christoph Stampfer
Christoph Stampfer RWTH Aachen University
Alex Zettl
Alex Zettl University of California, Berkeley
Michael F. Crommie
Michael F. Crommie University of California, Berkeley
Chun Ning Lau
Chun Ning Lau The Ohio State University

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