His scientific interests lie mostly in Optoelectronics, Photodetector, Heterojunction, Infrared and Graphene. His study in Optics extends to Optoelectronics with its themes. Weida Hu has researched Photodetector in several fields, including Wavelength, Detector, Ferroelectricity and Quantum efficiency.
The various areas that Weida Hu examines in his Graphene study include Quantum dot, Ultrashort pulse and Electrical engineering. His research investigates the connection with Responsivity and areas like Semiconductor which intersect with concerns in Polarization and Electrical transport. His study in Nanowire is interdisciplinary in nature, drawing from both Photocurrent, Thin-film transistor and Photoconductivity.
Weida Hu mainly investigates Optoelectronics, Photodetector, Optics, Photodiode and Infrared. His Heterojunction, Responsivity, Dark current, Nanowire and Photodetection study are his primary interests in Optoelectronics. His Heterojunction research includes themes of Transistor, Rectification and Semiconductor.
His Photodetector research is multidisciplinary, incorporating elements of Photocurrent, Wavelength, Detector and Graphene. His studies deal with areas such as Mercury cadmium telluride, Diode and Quantum tunnelling as well as Photodiode. His studies in Infrared integrate themes in fields like Band gap and Electronic band structure.
Weida Hu mainly focuses on Optoelectronics, Photodetector, Infrared, Heterojunction and Responsivity. His Optoelectronics study typically links adjacent topics like Broadband. Weida Hu has included themes like Field-effect transistor, Graphene and Quantum efficiency in his Photodetector study.
His research integrates issues of Wavelength, Tellurium, Linear polarization, Band gap and Anisotropy in his study of Infrared. His research in Heterojunction intersects with topics in Photocurrent, Charge density, Electrode and Insulator. The concepts of his Responsivity study are interwoven with issues in Noise, Chemical vapor deposition, Azobenzene and Voltage.
Weida Hu focuses on Optoelectronics, Photodetector, Heterojunction, Photodiode and Responsivity. His Optoelectronics research integrates issues from Field-effect transistor, Transistor and Infrared. His Photodetector research incorporates elements of Nanowire, Epitaxy, Visible spectrum, Band gap and Quantum efficiency.
His study looks at the relationship between Photodiode and topics such as Graphene, which overlap with Diode and Electrolyte. His Responsivity study incorporates themes from Ferroelectricity and Homojunction. His Specific detectivity study combines topics in areas such as Gate dielectric and Photodetection.
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Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Xudong Wang;Xudong Wang;Peng Wang;Jianlu Wang;Weida Hu.
Advanced Materials (2015)
Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays
Jinshui Miao;Weida Hu;Youliang Jing;Wenjin Luo.
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
Mingsheng Long;Anyuan Gao;Peng Wang;Hui Xia.
Science Advances (2017)
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
Mingsheng Long;Peng Wang;Hehai Fang;Weida Hu.
Advanced Functional Materials (2019)
ReS2-Based Field-Effect Transistors and Photodetectors
Enze Zhang;Yibo Jin;Xiang Yuan;Weiyi Wang.
Advanced Functional Materials (2015)
Photogating in Low Dimensional Photodetectors
Hehai Fang;Weida Hu.
Advanced Science (2017)
Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors
Zhenyi Ni;Lingling Ma;Sichao Du;Yang Xu.
ACS Nano (2017)
Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures
Kenan Zhang;Tianning Zhang;Guanghui Cheng;Tianxin Li.
ACS Nano (2016)
Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors
Jinshui Miao;Weida Hu;Weida Hu;Nan Guo;Nan Guo;Zhenyu Lu;Zhenyu Lu.
ACS Nano (2014)
Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet—Visible to Infrared
Jianlu Wang;Hehai Fang;Xudong Wang;Xiaoshuang Chen.
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