World's Best Scientists 2026 revealed!
Jiansheng Jie

Jiansheng Jie

D-Index & Metrics

Materials Science

D-Index
81
Citations
22423
World Ranking
2606
National Ranking
822

Jiansheng Jie publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jiansheng Jie sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 308 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jiansheng Jie D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jiansheng Jie sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 81 D-Index — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jiansheng Jie is affiliated with Soochow University in China and has a research focus primarily in engineering and materials science. Their work spans various subfields including electrical and electronic engineering, materials chemistry, biomedical engineering, electronic, optical and magnetic materials, as well as polymers and plastics.

The scientist's publications demonstrate a strong orientation towards advanced materials and device applications, with main research topics including organic electronics and photovoltaics, perovskite materials and applications, 2D materials and applications, advanced sensor and energy harvesting materials, thin-film transistor technologies, nanowire synthesis and applications, and advanced memory and neural computing.

Recent papers authored or co-authored by Jiansheng Jie include:

  • Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation (2021, ACS Nano)
  • Van der Waals Epitaxial Growth of Mosaic-Like 2D Platinum Ditelluride Layers for Room-Temperature Mid-Infrared Photodetection up to 10.6 µm (2020, Advanced Materials)
  • Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection (2023, Light Science & Applications)
  • In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio (2022, ACS Nano)
  • Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing (2020, Journal of Materials Chemistry A)

The frequent coauthors collaborating with Jiansheng Jie are:

  • Xiujuan Zhang
  • Wei Deng
  • Xiaohong Zhang
  • Di Wu
  • Chao-qiang Wang

Jiansheng Jie regularly publishes in high-impact venues, with multiple contributions to:

  • Advanced Materials
  • Advanced Functional Materials
  • Journal of Materials Chemistry C
  • ACS Nano
  • Nanoscale

Best Publications

  • MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors

    Liu Wang;Jiansheng Jie;Zhibin Shao;Qing Zhang

  • Preparation of Large-Area Uniform Silicon Nanowires Arrays through Metal-Assisted Chemical Etching

    † Ming-Liang Zhang;‡ Kui-Qing Peng;Xia Fan;‡ Jian-Sheng Jie

  • Photoconductive characteristics of single-crystal CdS nanoribbons.

    J S Jie;W J Zhang;Y Jiang;X M Meng

  • Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction

    Di Wu;Jiawen Guo;Juan Du;Congxin Xia

  • Silicon nanowires for rechargeable lithium-ion battery anodes

    Kuiqing Peng;Jiansheng Jie;Wenjun Zhang;Shuit-Tong Lee

  • High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors

    Hongbin Zhang;Xiujuan Zhang;Chang Liu;Shuit-Tong Lee

  • Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation.

    Di Wu;Jiawen Guo;Chaoqiang Wang;Xiaoyan Ren

  • Aligned Single-Crystalline Perovskite Microwire Arrays for High-Performance Flexible Image Sensors with Long-Term Stability.

    Wei Deng;Xiujuan Zhang;Liming Huang;Xiuzhen Xu

  • In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio.

    Unknown

  • Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

    Unknown

  • One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

    Jiansheng Jie;Jiansheng Jie;Wenjun Zhang;Igor Bello;Chun-Sing Lee

  • Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm

    Longhui Zeng;Di Wu;Jiansheng Jie;Xiaoyan Ren

  • Ultrahigh-Responsivity Photodetectors from Perovskite Nanowire Arrays for Sequentially Tunable Spectral Measurement

    Wei Deng;Liming Huang;Xiuzhen Xu;Xiujuan Zhang

  • Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode.

    Jie Mao;Yongqiang Yu;Liu Wang;Xiujuan Zhang

  • p-Type ZnO Nanowire Arrays

    G. D. Yuan;W. J. Zhang;J. S. Jie;X. Fan

  • Monolayer Graphene Film on ZnO Nanorod Array for High‐Performance Schottky Junction Ultraviolet Photodetectors

    Biao Nie;Ji-Gang Hu;Lin-Bao Luo;Chao Xie

  • Photoresponse properties of CdSe single-nanoribbon photodetectors

    Yang Jiang;Yang Jiang;Wen Jun Zhang;Jian Sheng Jie;Xiang Min Meng;Xiang Min Meng

  • Metal Acetylacetonate Series in Interface Engineering for Full Low-Temperature-Processed, High-Performance, and Stable Planar Perovskite Solar Cells with Conversion Efficiency over 16% on 1 cm2 Scale

    Wei Chen;Leiming Xu;Xiyuan Feng;Jiansheng Jie

  • Solution-Processed Graphene Quantum Dot Deep-UV Photodetectors

    Qing Zhang;Jiansheng Jie;Senlin Diao;Zhibin Shao

  • Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices.

    Xiujuan Zhang;Zhibin Shao;Xiaohong Zhang;Yuanyuan He

  • Indium-doped zinc oxide nanobelts

    Jiansheng Jie;Guanzhong Wang;Xinhai Han;Qingxuan Yu

  • Tunable n‐Type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays

    Guo-Dong Yuan;Wen-Jun Zhang;Jian-Sheng Jie;Jian-Sheng Jie;Xia Fan

  • Organometal Halide Perovskite Quantum Dot Light‐Emitting Diodes

    Wei Deng;Xiuzhen Xu;Xiujuan Zhang;Yedong Zhang

Frequent Co-Authors

Xiaohong Zhang
Xiaohong Zhang Soochow University
Shuit-Tong Lee
Shuit-Tong Lee Macau University of Science and Technology
Lin-Bao Luo
Lin-Bao Luo Hefei University of Technology
Yongqiang Yu
Yongqiang Yu Hefei University of Technology
Wenjun Zhang
Wenjun Zhang City University of Hong Kong
Di Wu
Di Wu Nanjing University
Chao Xie
Chao Xie Hefei University of Technology
Chun-Sing Lee
Chun-Sing Lee City University of Hong Kong
Wenping Hu
Wenping Hu Tianjin University
Juan Antonio Zapien
Juan Antonio Zapien City University of Hong Kong

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