World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
48
Citations
9542
World Ranking
10780
National Ranking
3001

Chao Xie publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Chao Xie sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 106 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Chao Xie D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Chao Xie sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 48 D-Index — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Chao Xie is affiliated with Hefei University of Technology in China. Their research primarily spans the fields of Materials Science and Engineering, with a significant focus on Electrical and Electronic Engineering as well as Materials Chemistry.

Their work covers several specialized subfields, including:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering
  • Nuclear and High Energy Physics

Chao Xie's research topics include:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Ga2O3 and related materials
  • Multiferroics and related materials
  • Chalcogenide Semiconductor Thin Films
  • Plasmonic and Surface Plasmon Research

Frequent co-authors in their publications include:

  • Lin-Bao Luo
  • Wenhua Yang
  • Chunyan Wu
  • Zhixiang Huang
  • Liangpan Yang

Key venues where Chao Xie has published work are:

  • Journal of Materials Chemistry C
  • IEEE Transactions on Electron Devices
  • SSRN Electronic Journal
  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces

Selected publications by Chao Xie include:

  • Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application, 2020, Journal of Material Science and Technology
  • The Payload for Ultrahigh Energy Observations (PUEO): a white paper, 2021, Journal of Instrumentation
  • Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application, 2020, ACS Applied Materials & Interfaces
  • A SERS stamp: Multiscale coupling effect of silver nanoparticles and highly ordered nano-micro hierarchical substrates for ultrasensitive explosive detection, 2020, Sensors and Actuators B Chemical
  • Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications, 2021, Nanoscale

Best Publications

  • Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

    Chao Xie;Chunhin Mak;Xiaoming Tao;Feng Yan

  • Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

    Chao Xie;Xing-Tong Lu;Xiao-Wei Tong;Zhi-Xiang Zhang

  • Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

    Long Hui Zeng;Di Wu;Sheng Huang Lin;Chao Xie

  • Fast, Self-Driven, Air-Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

    Long Hui Zeng;Sheng Huang Lin;Zhong Jun Li;Zhi Xiang Zhang

  • Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector.

    Long-Hui Zeng;Ming-Zheng Wang;Han Hu;Biao Nie

  • Flexible Photodetectors Based on Novel Functional Materials.

    Chao Xie;Chao Xie;Feng Yan

  • Nonbleaching Fluorescence of Gold Nanoparticles and Its Applications in Cancer Cell Imaging

    Hua He;Chao Xie;Jicun Ren

  • Perovskite‐Based Phototransistors and Hybrid Photodetectors

    Chao Xie;Chun Ki Liu;Hok Leung Loi;Feng Yan

  • Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions

    Chao Xie;Peng You;Zhike Liu;Li Li

  • Monolayer Graphene Film on ZnO Nanorod Array for High‐Performance Schottky Junction Ultraviolet Photodetectors

    Biao Nie;Ji-Gang Hu;Lin-Bao Luo;Chao Xie

  • Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

    Chao Xie;Biao Nie;Longhui Zeng;Feng-Xia Liang

  • Ultrathin and flexible perovskite solar cells with graphene transparent electrodes

    Zhike Liu;Zhike Liu;Peng You;Chao Xie;Guanqi Tang

  • Sensitive Deep Ultraviolet Photodetector and Image Sensor Composed of Inorganic Lead-Free Cs3Cu2I5 Perovskite with Wide Bandgap.

    Zhi-Xiang Zhang;Chen Li;Yu Lu;Xiao-Wei Tong

  • Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications

    Chao Xie;Yi Wang;Zhi-Xiang Zhang;Di Wang

  • Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe2/Perovskite Heterojunctions.

    Zhi-Xiang Zhang;Long-Hui Zeng;Xiao-Wei Tong;Yang Gao

  • Light trapping and surface plasmon enhanced high-performance NIR photodetector

    Lin-Bao Luo;Long-Hui Zeng;Chao Xie;Yong-Qiang Yu

  • High-efficiency graphene/Si nanoarray Schottky junction solar cells via surface modification and graphene doping

    Xiaozhen Zhang;Chao Xie;Jiansheng Jie;Xiwei Zhang

  • Monolayer graphene film/silicon nanowire array Schottky junction solar cells

    Chao Xie;Peng Lv;Biao Nie;Jiansheng Jie

  • Surface passivation and band engineering: a way toward high efficiency graphene–planar Si solar cells

    Chao Xie;Chao Xie;Xiaozhen Zhang;Yiming Wu;Xiujuan Zhang

  • High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate.

    Chao Xie;Longhui Zeng;Zhixiang Zhang;Yuen Hong Tsang

  • Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region.

    Chao Xie;Feng Yan

Frequent Co-Authors

Lin-Bao Luo
Lin-Bao Luo Hefei University of Technology
Jiansheng Jie
Jiansheng Jie Soochow University
Yongqiang Yu
Yongqiang Yu Hefei University of Technology
Feng Yan
Feng Yan Hong Kong Polytechnic University
Di Wu
Di Wu Nanjing University
Shu Ping Lau
Shu Ping Lau Hong Kong Polytechnic University
Yucheng Wu
Yucheng Wu Hefei University of Technology
Yang Chai
Yang Chai Hong Kong Polytechnic University
Shu-Hong Yu
Shu-Hong Yu University of Science and Technology of China
Zhike Liu
Zhike Liu Shaanxi Normal University

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