World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
93
Citations
38131
World Ranking
1436
National Ranking
457

Jingbo Li publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jingbo Li sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 497 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jingbo Li D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jingbo Li sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 93 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jingbo Li is affiliated with South China Normal University in China and has contributed extensively to materials science and engineering research, focusing on two-dimensional materials and their applications. Their work spans multiple facets of materials chemistry and electrical and electronic engineering, with significant involvement in biomedical engineering, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

The scientist's main fields of study include:

  • Materials Science
  • Engineering

They have a prominent focus on subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

The primary research topics Jingbo Li has worked on encompass:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Ga2O3 and related materials
  • Graphene research and applications
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films

Jingbo Li has published in scientific venues with considerable frequency, including:

  • ACS Applied Materials & Interfaces
  • Advanced Optical Materials
  • Nanoscale
  • Science China Materials
  • Advanced Electronic Materials

Frequent coauthors contributing to their research include:

  • Wei Gao
  • Zhaoqiang Zheng
  • Nengjie Huo
  • Mengmeng Yang
  • Jiandong Yao

Recent papers by Jingbo Li cover diverse topics within advanced materials research and photodetection technologies:

  • "2D WS2 Based Asymmetric Schottky Photodetector with High Performance," 2020, Advanced Electronic Materials
  • "High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition," 2021, Materials Horizons
  • "High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2/Te Tunneling Heterostructure," 2023, Small
  • "High Performance Self-Driven Polarization-Sensitive Photodetectors Based on GeAs/InSe Heterojunction," 2021, Advanced Optical Materials
  • "In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic," 2020, ACS Nano

Best Publications

  • Band offsets and heterostructures of two-dimensional semiconductors

    Jun Kang;Sefaattin Tongay;Jian Zhou;Jingbo Li

  • Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2

    Sefaattin Tongay;Jian Zhou;Can Ataca;Kelvin Lo

  • Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    Sefaattin Tongay;Joonki Suh;Joonki Suh;Can Ataca;Wen Fan

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field

    Qu Yue;Zhengzheng Shao;Shengli Chang;Jingbo Li

  • Design of narrow-gap TiO2: a passivated codoping approach for enhanced photoelectrochemical activity.

    Yanqin Gai;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

    Sefaattin Tongay;Wen Fan;Wen Fan;Jun Kang;Joonsuk Park

  • Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

    Sefaattin Tongay;Jian Zhou;Can Ataca;Jonathan Liu

  • Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes

    Nengjie Huo;Shengxue Yang;Zhongming Wei;Shu-Shen Li

  • Two-dimensional nanosheets of MoS2: a promising material with high dielectric properties and microwave absorption performance.

    Ming-Qiang Ning;Ming-Ming Lu;Jing-Bo Li;Zhuo Chen

  • Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

    Nengjie Huo;Jun Kang;Zhongming Wei;Shu-Shen Li

  • Elastic, Electronic, and Optical Properties of Two-Dimensional Graphyne Sheet

    Jun Kang;Jingbo Li;Jingbo Li;Fengmin Wu;Shu-Shen Li

  • Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

    Haowei Peng;H. J. Xiang;Su-Huai Wei;Shu-Shen Li

  • Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering.

    Shengxue Yang;Cong Wang;Hasan Sahin;Hui Chen

  • Functionalization of monolayer MoS2 by substitutional doping: A first-principles study

    Qu Yue;Shengli Chang;Shiqiao Qin;Jingbo Li

  • Chemical reduction dependent dielectric properties and dielectric loss mechanism of reduced graphene oxide

    Boya Kuang;Weili Song;Mingqiang Ning;Jingbo Li

  • Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K

    Sangwook Lee;Fan Yang;Joonki Suh;Sijie Yang

  • A two-dimensional Fe-doped SnS2 magnetic semiconductor.

    Bo Li;Bo Li;Tao Xing;Mianzeng Zhong;Le Huang

  • Mechanical and electronic properties of monolayer MoS2 under elastic strain

    Qu Yue;Jun Kang;Zhengzheng Shao;Xueao Zhang

  • Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide

    Xiaoting Wang;Yongtao Li;Le Huang;Xiang-Wei Jiang

  • Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

    Yan Li;Shengxue Yang;Jingbo Li

Frequent Co-Authors

Haibo Jin
Haibo Jin Beijing Institute of Technology
Zhongming Wei
Zhongming Wei Chinese Academy of Sciences
Shu-Shen Li
Shu-Shen Li Chinese Academy of Sciences
Congxin Xia
Congxin Xia Henan Normal University
Junqiao Wu
Junqiao Wu University of California, Berkeley
Sefaattin Tongay
Sefaattin Tongay Arizona State University
Hui-Xiong Deng
Hui-Xiong Deng Chinese Academy of Sciences
Jun Luo
Jun Luo Chinese Academy of Sciences
Zhiguo Wang
Zhiguo Wang University of Electronic Science and Technology of China
Mao-Sheng Cao
Mao-Sheng Cao Beijing Institute of Technology

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