World's Best Scientists 2026 revealed!

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Materials Science

D-Index
93
Citations
38131
World Ranking
1437
National Ranking
456

Overview

Jingbo Li is affiliated with South China Normal University in China and has contributed extensively to materials science and engineering research, focusing on two-dimensional materials and their applications. Their work spans multiple facets of materials chemistry and electrical and electronic engineering, with significant involvement in biomedical engineering, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

The scientist's main fields of study include:

  • Materials Science
  • Engineering

They have a prominent focus on subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

The primary research topics Jingbo Li has worked on encompass:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Ga2O3 and related materials
  • Graphene research and applications
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films

Jingbo Li has published in scientific venues with considerable frequency, including:

  • ACS Applied Materials & Interfaces
  • Advanced Optical Materials
  • Nanoscale
  • Science China Materials
  • Advanced Electronic Materials

Frequent coauthors contributing to their research include:

  • Wei Gao
  • Zhaoqiang Zheng
  • Nengjie Huo
  • Mengmeng Yang
  • Jiandong Yao

Recent papers by Jingbo Li cover diverse topics within advanced materials research and photodetection technologies:

  • "2D WS2 Based Asymmetric Schottky Photodetector with High Performance," 2020, Advanced Electronic Materials
  • "High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition," 2021, Materials Horizons
  • "High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2/Te Tunneling Heterostructure," 2023, Small
  • "High Performance Self-Driven Polarization-Sensitive Photodetectors Based on GeAs/InSe Heterojunction," 2021, Advanced Optical Materials
  • "In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic," 2020, ACS Nano

Best Publications

  • Band offsets and heterostructures of two-dimensional semiconductors

    Jun Kang;Sefaattin Tongay;Jian Zhou;Jingbo Li

  • Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2

    Sefaattin Tongay;Jian Zhou;Can Ataca;Kelvin Lo

  • Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    Sefaattin Tongay;Joonki Suh;Joonki Suh;Can Ataca;Wen Fan

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field

    Qu Yue;Zhengzheng Shao;Shengli Chang;Jingbo Li

  • Design of narrow-gap TiO2: a passivated codoping approach for enhanced photoelectrochemical activity.

    Yanqin Gai;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

    Sefaattin Tongay;Wen Fan;Wen Fan;Jun Kang;Joonsuk Park

  • Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

    Sefaattin Tongay;Jian Zhou;Can Ataca;Jonathan Liu

  • Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes

    Nengjie Huo;Shengxue Yang;Zhongming Wei;Shu-Shen Li

  • Two-dimensional nanosheets of MoS2: a promising material with high dielectric properties and microwave absorption performance.

    Ming-Qiang Ning;Ming-Ming Lu;Jing-Bo Li;Zhuo Chen

  • Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

    Nengjie Huo;Jun Kang;Zhongming Wei;Shu-Shen Li

  • Elastic, Electronic, and Optical Properties of Two-Dimensional Graphyne Sheet

    Jun Kang;Jingbo Li;Jingbo Li;Fengmin Wu;Shu-Shen Li

  • Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

    Haowei Peng;H. J. Xiang;Su-Huai Wei;Shu-Shen Li

  • Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering.

    Shengxue Yang;Cong Wang;Hasan Sahin;Hui Chen

  • Functionalization of monolayer MoS2 by substitutional doping: A first-principles study

    Qu Yue;Shengli Chang;Shiqiao Qin;Jingbo Li

  • Chemical reduction dependent dielectric properties and dielectric loss mechanism of reduced graphene oxide

    Boya Kuang;Weili Song;Mingqiang Ning;Jingbo Li

  • Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K

    Sangwook Lee;Fan Yang;Joonki Suh;Sijie Yang

  • A two-dimensional Fe-doped SnS2 magnetic semiconductor.

    Bo Li;Bo Li;Tao Xing;Mianzeng Zhong;Le Huang

  • Mechanical and electronic properties of monolayer MoS2 under elastic strain

    Qu Yue;Jun Kang;Zhengzheng Shao;Xueao Zhang

  • Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide

    Xiaoting Wang;Yongtao Li;Le Huang;Xiang-Wei Jiang

  • Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

    Yan Li;Shengxue Yang;Jingbo Li

Frequent Co-Authors

Haibo Jin
Haibo Jin Beijing Institute of Technology
Zhongming Wei
Zhongming Wei Chinese Academy of Sciences
Shu-Shen Li
Shu-Shen Li Chinese Academy of Sciences
Congxin Xia
Congxin Xia Henan Normal University
Junqiao Wu
Junqiao Wu University of California, Berkeley
Sefaattin Tongay
Sefaattin Tongay Arizona State University
Hui-Xiong Deng
Hui-Xiong Deng Chinese Academy of Sciences
Jun Luo
Jun Luo Chinese Academy of Sciences
Zhiguo Wang
Zhiguo Wang University of Electronic Science and Technology of China
Mao-Sheng Cao
Mao-Sheng Cao Beijing Institute of Technology

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