World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
44
Citations
8439
World Ranking
11980
National Ranking
3286

Zhigao Hu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Zhigao Hu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 310 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Zhigao Hu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Zhigao Hu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Zhigao Hu is affiliated with East China Normal University in China and has contributed extensively to the fields of Materials Science and Engineering. Their research focuses on areas such as Materials Chemistry, Electrical and Electronic Engineering, and the study of Electronic, Optical, and Magnetic Materials.

The scientist's work encompasses a range of specialized topics, including:

  • 2D Materials and Applications
  • Ferroelectric and Piezoelectric Materials
  • MXene and MAX Phase Materials
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • Multiferroics and related materials
  • Advanced Memory and Neural Computing

Zhigao Hu has published research in several frequent venues, highlighting a consistent engagement with the materials research community. These publication venues include:

  • ACS Applied Materials & Interfaces
  • Physical Review B
  • Applied Physics Letters
  • Journal of Alloys and Compounds
  • IEEE Electron Device Letters

Their body of work includes papers such as:

  • "Unipolar barrier photodetectors based on van der Waals heterostructures," 2021, Nature Electronics
  • "Direct Observation on p- to n-Type Transformation of Perovskite Surface Region during Defect Passivation Driving High Photovoltaic Efficiency," 2021, Joule
  • "Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition," 2021, Science Advances
  • "Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection," 2020, Advanced Materials
  • "Applications of Nickel-Based Electrocatalysts for Hydrogen Evolution Reaction," 2022, Advanced Energy and Sustainability Research

The scientist collaborates frequently with peers who contribute significantly to their research projects. Among their most frequent co-authors are:

  • Kai Jiang
  • Liyan Shang
  • Jinzhong Zhang
  • Yawei Li
  • Liangqing Zhu

Best Publications

  • Unipolar barrier photodetectors based on van der Waals heterostructures

    Yunfeng Chen;Yang Wang;Yang Wang;Zhen Wang;Yue Gu

  • Direct Observation on p- to n-Type Transformation of Perovskite Surface Region during Defect Passivation Driving High Photovoltaic Efficiency

    Shaobing Xiong;Zhangyu Hou;Shijie Zou;Xiaoshuang Lu

  • Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

    Meng Peng;Meng Peng;Runzhang Xie;Zhen Wang;Peng Wang

  • Copper ferrites@reduced graphene oxide anode materials for advanced lithium storage applications.

    Junyong Wang;Qinglin Deng;Mengjiao Li;Kai Jiang

  • Synthesis, surface morphology, and photoluminescence properties of anatase iron-doped titanium dioxide nano-crystalline films.

    Jinzhong Zhang;Xiangui Chen;Yude Shen;Yawei Li

  • Effect of oxygen defects on ferromagnetic of undoped ZnO

    Unknown

  • Efficient and Hole-Transporting-Layer-Free CsPbI 2 Br Planar Heterojunction Perovskite Solar Cells through Rubidium Passivation

    Yixin Guo;Fei Zhao;Jiahua Tao;Jinchun Jiang

  • Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection.

    Yang Wang;Yang Wang;Peisong Wu;Zhen Wang;Man Luo

  • Improving the efficiency of Sb2Se3 thin-film solar cells by post annealing treatment in vacuum condition

    Xiaobo Hu;Jiahua Tao;Shiming Chen;Juanjuan Xue

  • Structural, electronic band transition and optoelectronic properties of delafossite CuGa1−xCrxO2 (0 ≤ x ≤ 1) solid solution films grown by the sol–gel method

    Meijie Han;Kai Jiang;Jinzhong Zhang;Wenlei Yu

  • Optical and Electrical Properties of Sol–Gel Derived Ba1–xLaxSnO3 Transparent Conducting Films for Potential Optoelectronic Applications

    Chao Shan;Ting Huang;Jinzhong Zhang;Meijie Han

  • Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS 2 .

    Liping Xu;Peng Zhang;Huaning Jiang;Xiang Wang

  • Tuning Coupling Behavior of Stacked Heterostructures Based on MoS 2 , WS 2 , and WSe 2

    Fang Wang;Junyong Wang;Shuang Guo;Jinzhong Zhang

  • Highly transparent and conductive Al-doped ZnO films synthesized by pulsed laser co-ablation of Zn and Al targets assisted by oxygen plasma

    Qinghu You;Hua Cai;Hua Cai;Kun Gao;Zhigao Hu

  • Blue shift in absorption edge and widening of band gap of ZnO by Al doping and Al–N co-doping

    Qinghu You;Hua Cai;Hua Cai;Zhigao Hu;Peipei Liang

  • High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films.

    Wenlei Yin;Jiayan Yang;Keyang Zhao;Anyang Cui

  • Superior adsorption and photoinduced carries transfer behaviors of dandelion-shaped Bi 2 S 3 @MoS 2 : experiments and theory

    Mengjiao Li;Junyong Wang;Peng Zhang;Qinglin Deng

  • Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure

    Bin Zhou;Kai Jiang;Liyan Shang;Jinzhong Zhang

  • Microstructural and optical investigations of sol-gel derived ferroelectric BaTiO3 nanocrystalline films determined by spectroscopic ellipsometry

    Z.G. Hu;Y.W. Li;M. Zhu;Z.Q. Zhu

  • Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO(2) film near the metal-insulator transition region

    Li Ww (Li W. W.);Yu Q (Yu Q.);Liang Jr (Liang J. R.);Jiang K (Jiang K.)

  • Structure, Optical, and Room-Temperature Ferromagnetic Properties of Pure and Transition-Metal-(Cr, Mn, and Ni)-Doped ZnO Nanocrystalline Films Grown by the Sol-Gel Method

    W. W. Li;W. L. Yu;Y. J. Jiang;C. B. Jing

  • Temperature dependence of electronic transitions and optical properties in multiferroic BiFeO3 nanocrystalline film determined from transmittance spectra

    W. W. Li;J. J. Zhu;J. D. Wu;J. Gan

Frequent Co-Authors

Junhao Chu
Junhao Chu East China Normal University
Kai Jiang
Kai Jiang Henan Normal University
Junhao Chu
Junhao Chu Chinese Academy of Sciences
Xianlin Dong
Xianlin Dong Chinese Academy of Sciences
Ziqiang Zhu
Ziqiang Zhu East China Normal University
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Hans Lüth
Hans Lüth Forschungszentrum Jülich
Zhitang Song
Zhitang Song Chinese Academy of Sciences
Haosu Luo
Haosu Luo Chinese Academy of Sciences
Shiyou Chen
Shiyou Chen Fudan University

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