2026 Hans Lüth: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	70	4416	4273	248	239	569	18005

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

4416

4273

248

239

569

18005

Overview

Hans Lüth is a researcher affiliated with Forschungszentrum Jülich in Germany, with a primary focus in the field of Physics and Astronomy. Their scholarly work spans 49 publications, concentrating mainly on Atomic and Molecular Physics, and Optics, as well as Condensed Matter Physics and Materials Chemistry, with additional contributions to Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials.

Their research topics cover a range of areas including:

Topological Materials and Phenomena
Quantum and electron transport phenomena
Physics of Superconductivity and Magnetism
Quantum many-body systems
Advanced Condensed Matter Physics
Graphene research and applications
Atomic and Subatomic Physics Research

Hans Lüth's publication record features recent papers such as:

Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi₂Te₃ nanoribbons, 2022, SciPost Physics Core
Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings, 2023, Nano Letters
Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions, 2023, Nanomaterials
In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions, 2020, arXiv (Cornell University)
Universal conductance fluctuations in a Bi_1.5Sb_0.5Te_1.8Se_1.2 topological insulator nano-scaled Hall bar structure, 2023, Semiconductor Science and Technology

Their frequent collaborators include:

Detlev Grützmacher
Thomas Schäpers
Peter Schüffelgen
Abdur Rehman Jalil
Gerrit Behner

Hans Lüth has published extensively in venues such as:

arXiv (Cornell University)
Physical Review B
Nanomaterials
SciPost Physics Core
Nano Letters

Best Publications

Size-dependent Photoconductivity in MBE-Grown GaN -Nanowires

Raffaella Calarco;Michel Marso;Thomas Richter;Ali I. Aykanat

655
Citations
Experimental and theoretical approach to spin splitting in modulation-doped In x Ga 1 − x As/InP quantum wells for B→0

G. Engels;J. Lange;Th. Schäpers;H. Lüth

620
Citations
Solid Surfaces, Interfaces and Thin Films

Hans Lüth

493
Citations
Effect of the heterointerface on the spin splitting in modulation doped InxGa1−xAs/InP quantum wells for B→0

Th. Schäpers;G. Engels;J. Lange;Th. Klocke

369
Citations
Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

Raffaella Calarco;Ralph J. Meijers;Ratan K. Debnath;Toma Stoica

344
Citations
Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

R. Apetz;L. Vescan;A. Hartmann;C. Dieker

334
Citations
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

R. K. Debnath;R. Meijers;T. Richter;T. Stoica

301
Citations
Porous silicon multilayer optical waveguides

A Loni;L.T Canham;M.G Berger;R Arens-Fischer

287
Citations
Surfaces and interfaces of solids

Hans Lüth

245
Citations
Porosity superlattices: a new class of Si heterostructures

M G Berger;C Dieker;M Thonissen;L Vescan

228
Citations
Dielectric filters made of PS: advanced performance by oxidation and new layer structures

M.G Berger;R Arens-Fischer;M Thönissen;M Krüger

227
Citations
Solid-State Physics: An Introduction to Principles of Materials Science

Harald Ibach;Hans Luth

224
Citations
Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Toma Stoica;Eli Sutter;Ralph J. Meijers;Ratan K. Debnath

189
Citations
Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

Toma Stoica;Ralph J. Meijers;Raffaella Calarco;Thomas Richter

186
Citations
Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures.

T. Schmidt;M. Tewordt;R. H. Blick;R. J. Haug

183
Citations
Porous silicon as a substrate material for potentiometric biosensors

Marion Thust;M J Schöning;S Frohnhoff;R Arens-Fischer

177
Citations
Metalorganic CVD of GaAs in a molecular beam system

E. Veuhoff;W. Pletschen;P. Balk;H. Lüth

168
Citations
A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

N. Pütz;H. Heinecke;M. Heyen;P. Balk

159
Citations
Selective growth of GaAs in the MOMBE and MOCVD systems

H. Heinecke;A. Brauers;F. Grafahrend;C. Plass

156
Citations
GaAs growth in metal–organic MBE

N. Pütz;E. Veuhoff;H. Heinecke;M. Heyen

146
Citations