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Materials Science

D-Index
50
Citations
8397
World Ranking
10286
National Ranking
575

Overview

Lutz Geelhaar is affiliated with the Paul Drude Institute for Solid State Electronics in Germany. Their research primarily spans the fields of Physics and Astronomy, Engineering, and Materials Science, with a strong focus on various subfields such as Condensed Matter Physics, Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Electronic, Optical and Magnetic Materials.

The scientist's work has largely concentrated on topics related to semiconductor materials and devices. Key areas include GaN-based semiconductor devices and materials, nanowire synthesis and applications, ZnO doping and properties, Ga2O3 and related materials, semiconductor quantum structures and devices, metal and thin film mechanics, and acoustic wave resonator technologies.

Among the notable recent publications by Lutz Geelhaar are the following papers:

  • Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy, 2023, Applied Physics Letters
  • High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures, 2022, Advanced Science
  • Detaching (In,Ga)N Nanowire Films for Devices Requiring High Flexibility and Transmittance, 2020, ACS Applied Nano Materials
  • Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires, 2020, ACS Applied Nano Materials
  • Radius-dependent homogeneous strain in uncoalesced GaN nanowires, 2020, Acta Materialia

Lutz Geelhaar frequently collaborates with several researchers, including:

  • O. Brandt
  • Jonas Lähnemann
  • Thomas Auzelle
  • A. Trampert
  • P. John

Their publications appear most often in venues such as arXiv (Cornell University), Nanotechnology, ACS Applied Nano Materials, Nano Letters, and Applied Physics Letters.

Best Publications

  • Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

    Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger

  • Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

    Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt

  • Direct comparison of catalyst-free and catalyst-induced GaN nanowires

    Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber

  • Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

    Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert

  • Atomically resolved structure of InAs quantum dots

    Unknown

  • Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy

    G. Koblmueller;R. Averbeck;L. Geelhaar;H. Riechert

  • Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

    Uwe Jahn;Jonas Lähnemann;Carsten Pfüller;Oliver Brandt

  • Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

    Vincent Consonni;M. Hanke;M. Knelangen;L. Geelhaar

  • Low threshold InGaAsN/GaAs lasers beyond 1500 nm

    G. Jaschke;R. Averbeck;L. Geelhaar;H. Riechert

  • Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

    Oliver Brandt;Carsten Pfüller;Caroline Chèze;Lutz Geelhaar

  • Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.

    Emmanouil Dimakis;Uwe Jahn;Manfred Ramsteiner;Abbes Tahraoui

  • Direct experimental determination of the spontaneous polarization of GaN

    Jonas Lähnemann;Oliver Brandt;Uwe Jahn;Carsten Pfüller

  • Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

    L. Geelhaar;C. Chèze;B. Jenichen;O. Brandt

  • Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

    Sergio Fernández-Garrido;Xiang Kong;Tobias Gotschke;Raffaella Calarco

  • Surface-induced effects in GaN nanowires

    Raffaella Calarco;Toma Stoica;Oliver Brandt;Lutz Geelhaar

  • Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy.

    Sergio Fernández-Garrido;Vladimir M. Kaganer;Karl K. Sabelfeld;Tobias Gotschke

  • Quantitative description for the growth rate of self-induced GaN nanowires

    Vincent Consonni;V. G. Dubrovskii;V. G. Dubrovskii;A. Trampert;L. Geelhaar

  • Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)

    Emmanouil Dimakis;Jonas Lähnemann;Uwe Jahn;Steffen Breuer

  • Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy

    O. Rubel;M. Galluppi;S. D. Baranovskii;K. Volz

  • Effects of nanowire coalescence on their structural and optical properties on a local scale

    V. Consonni;M. Knelangen;U. Jahn;A. Trampert

  • Unpinning the Fermi level of GaN nanowires by ultraviolet radiation

    Carsten Pfüller;Oliver Brandt;Frank Grosse;Timur Flissikowski

Frequent Co-Authors

Oliver Brandt
Oliver Brandt Paul Drude Institute for Solid State Electronics
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Weimin Chen
Weimin Chen Linköping University
Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
Raffaella Calarco
Raffaella Calarco Leibniz Institute for Neurobiology
Thomas Seyller
Thomas Seyller Chemnitz University of Technology
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Stephanie Reich
Stephanie Reich Freie Universität Berlin
Enrico Zanoni
Enrico Zanoni University of Padua

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