D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 63 Citations 13,400 542 World Ranking 2762 National Ranking 26
Electronics and Electrical Engineering D-index 65 Citations 16,551 803 World Ranking 698 National Ranking 14

Research.com Recognitions

Awards & Achievements

2009 - IEEE Fellow For contributions to reliability of compound semiconductor devices

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Enrico Zanoni focuses on Optoelectronics, Gallium nitride, Wide-bandgap semiconductor, High-electron-mobility transistor and Transistor. His Optoelectronics study combines topics in areas such as Stress, Electroluminescence and Reliability. His study in Gallium nitride is interdisciplinary in nature, drawing from both Silicon, Electric field, Ohmic contact, Piezoelectricity and Substrate.

Enrico Zanoni has researched Wide-bandgap semiconductor in several fields, including Acceptor, Electronic engineering, Passivation and Quantum tunnelling. He interconnects Threshold voltage, Electron, Leakage and Analytical chemistry in the investigation of issues within High-electron-mobility transistor. In his work, Induced high electron mobility transistor, Dispersion and Photonics is strongly intertwined with Electron mobility, which is a subfield of Transistor.

His most cited work include:

  • Flash memory cells-an overview (641 citations)
  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (445 citations)
  • The 2018 GaN power electronics roadmap (355 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Gallium nitride, Light-emitting diode, High-electron-mobility transistor and Transistor. His Optoelectronics research is multidisciplinary, incorporating perspectives in Voltage, Stress and Reliability. His research on Gallium nitride also deals with topics like

  • Electroluminescence which intersects with area such as Cathodoluminescence,
  • Leakage, which have a strong connection to Breakdown voltage.

His Light-emitting diode research is multidisciplinary, incorporating elements of Quantum well, Wavelength, Ohmic contact and Phosphor. His High-electron-mobility transistor research incorporates themes from Transconductance and Analytical chemistry. His research in Transistor intersects with topics in Transient and Logic gate.

He most often published in these fields:

  • Optoelectronics (79.46%)
  • Gallium nitride (30.22%)
  • Light-emitting diode (22.41%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (79.46%)
  • Threshold voltage (10.36%)
  • Transistor (21.56%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Threshold voltage, Transistor, Stress and Light-emitting diode. His Optoelectronics study combines topics from a wide range of disciplines, such as Leakage, Capacitance, Gallium nitride and Voltage. His Gallium nitride study integrates concerns from other disciplines, such as Energy conversion efficiency, Wide-bandgap semiconductor, Reliability and Degradation.

In his study, Buffer is inextricably linked to Kinetics, which falls within the broad field of Transistor. His studies in Stress integrate themes in fields like Rate equation and Equivalent series resistance. His Light-emitting diode research is multidisciplinary, relying on both Wavelength, Quantum well, Irradiation, Dopant and Biasing.

Between 2018 and 2021, his most popular works were:

  • Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability (13 citations)
  • Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors (13 citations)
  • Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives (10 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary areas of investigation include Optoelectronics, Threshold voltage, Transistor, Gallium nitride and Light-emitting diode. Enrico Zanoni works in the field of Optoelectronics, focusing on Diode in particular. His Threshold voltage research also works with subjects such as

  • Nanowire which intersects with area such as Thermionic emission, Rate equation and Communication channel,
  • Irradiation which intersects with area such as Noise, Conductivity and Proton,
  • Energy, Commutation, Wafer and High-electron-mobility transistor most often made with reference to Power.

His studies deal with areas such as Wide-bandgap semiconductor, Condensed matter physics, Buffer, Analytical chemistry and Transient as well as Transistor. The various areas that Enrico Zanoni examines in his Gallium nitride study include Electroluminescence and Atomic physics. His Light-emitting diode research includes elements of Wavelength, Voltage droop, Thermal, Luminescence and Quantum well.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Flash memory cells-an overview

P. Pavan;R. Bez;P. Olivo;E. Zanoni.
Proceedings of the IEEE (1997)

1019 Citations

Flash memory cells-an overview

P. Pavan;R. Bez;P. Olivo;E. Zanoni.
Proceedings of the IEEE (1997)

1019 Citations

The 2018 GaN power electronics roadmap

H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)

710 Citations

The 2018 GaN power electronics roadmap

H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)

710 Citations

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo.
IEEE Transactions on Device and Materials Reliability (2008)

685 Citations

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo.
IEEE Transactions on Device and Materials Reliability (2008)

685 Citations

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi.
Journal of Applied Physics (2013)

420 Citations

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi.
Journal of Applied Physics (2013)

420 Citations

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo.
IEEE Transactions on Electron Devices (2004)

381 Citations

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo.
IEEE Transactions on Electron Devices (2004)

381 Citations

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