2009 - IEEE Fellow For contributions to reliability of compound semiconductor devices
Enrico Zanoni focuses on Optoelectronics, Gallium nitride, Wide-bandgap semiconductor, High-electron-mobility transistor and Transistor. His Optoelectronics study combines topics in areas such as Stress, Electroluminescence and Reliability. His study in Gallium nitride is interdisciplinary in nature, drawing from both Silicon, Electric field, Ohmic contact, Piezoelectricity and Substrate.
Enrico Zanoni has researched Wide-bandgap semiconductor in several fields, including Acceptor, Electronic engineering, Passivation and Quantum tunnelling. He interconnects Threshold voltage, Electron, Leakage and Analytical chemistry in the investigation of issues within High-electron-mobility transistor. In his work, Induced high electron mobility transistor, Dispersion and Photonics is strongly intertwined with Electron mobility, which is a subfield of Transistor.
His primary areas of study are Optoelectronics, Gallium nitride, Light-emitting diode, High-electron-mobility transistor and Transistor. His Optoelectronics research is multidisciplinary, incorporating perspectives in Voltage, Stress and Reliability. His research on Gallium nitride also deals with topics like
His Light-emitting diode research is multidisciplinary, incorporating elements of Quantum well, Wavelength, Ohmic contact and Phosphor. His High-electron-mobility transistor research incorporates themes from Transconductance and Analytical chemistry. His research in Transistor intersects with topics in Transient and Logic gate.
His primary scientific interests are in Optoelectronics, Threshold voltage, Transistor, Stress and Light-emitting diode. His Optoelectronics study combines topics from a wide range of disciplines, such as Leakage, Capacitance, Gallium nitride and Voltage. His Gallium nitride study integrates concerns from other disciplines, such as Energy conversion efficiency, Wide-bandgap semiconductor, Reliability and Degradation.
In his study, Buffer is inextricably linked to Kinetics, which falls within the broad field of Transistor. His studies in Stress integrate themes in fields like Rate equation and Equivalent series resistance. His Light-emitting diode research is multidisciplinary, relying on both Wavelength, Quantum well, Irradiation, Dopant and Biasing.
His primary areas of investigation include Optoelectronics, Threshold voltage, Transistor, Gallium nitride and Light-emitting diode. Enrico Zanoni works in the field of Optoelectronics, focusing on Diode in particular. His Threshold voltage research also works with subjects such as
His studies deal with areas such as Wide-bandgap semiconductor, Condensed matter physics, Buffer, Analytical chemistry and Transient as well as Transistor. The various areas that Enrico Zanoni examines in his Gallium nitride study include Electroluminescence and Atomic physics. His Light-emitting diode research includes elements of Wavelength, Voltage droop, Thermal, Luminescence and Quantum well.
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Flash memory cells-an overview
P. Pavan;R. Bez;P. Olivo;E. Zanoni.
Proceedings of the IEEE (1997)
Flash memory cells-an overview
P. Pavan;R. Bez;P. Olivo;E. Zanoni.
Proceedings of the IEEE (1997)
The 2018 GaN power electronics roadmap
H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)
The 2018 GaN power electronics roadmap
H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo.
IEEE Transactions on Device and Materials Reliability (2008)
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo.
IEEE Transactions on Device and Materials Reliability (2008)
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi.
Journal of Applied Physics (2013)
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi.
Journal of Applied Physics (2013)
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo.
IEEE Transactions on Electron Devices (2004)
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo.
IEEE Transactions on Electron Devices (2004)
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