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Enrico Zanoni

Enrico Zanoni

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
23055
World Ranking
899
National Ranking
16

Materials Science

D-Index
70
Citations
22827
World Ranking
4362
National Ranking
50

Research.com Recognitions

  • 2009 - IEEE Fellow For contributions to reliability of compound semiconductor devices

Overview

Enrico Zanoni is affiliated with the University of Padua in Italy and has made significant contributions to research in engineering and physics and astronomy, with a focus on electrical and electronic engineering as well as condensed matter physics.

Their main areas of study include:

  • Engineering
  • Physics and Astronomy

With a more specialized focus, Zanoni's subfields of study encompass:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Key topics covered in their research are:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Semiconductor Quantum Structures and Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • ZnO doping and properties

Zanoni has published frequently in several venues, notably:

  • Microelectronics Reliability
  • IEEE Transactions on Electron Devices
  • Journal of Physics D Applied Physics
  • Applied Physics Letters
  • Journal of Applied Physics

Noteworthy recent papers authored or co-authored include:

  • "GaN-based power devices: Physics, reliability, and perspectives," 2021, Journal of Applied Physics
  • "Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives," 2024, IEEE Transactions on Electron Devices
  • "Defects and Reliability of GaN-Based LEDs: Review and Perspectives," 2022, physica status solidi (a)
  • "Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives," 2020, Journal of Applied Physics
  • "'Hole Redistribution' Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs," 2021, IEEE Transactions on Electron Devices

Frequent collaborators of Zanoni include:

  • Matteo Meneghini
  • Gaudenzio Meneghesso
  • Carlo De Santi
  • Matteo Buffolo
  • Alessandro Caria

Enrico Zanoni was recognized as an IEEE Fellow in 2009 for contributions to the reliability of compound semiconductor devices.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Flash memory cells-an overview

    P. Pavan;R. Bez;P. Olivo;E. Zanoni

  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

    G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

    Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

    G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo

  • A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

    M. Meneghini;A. Tazzoli;G. Mura;G. Meneghesso

  • A Review on the Reliability of GaN-Based LEDs

    M. Meneghini;L.-R. Trevisanello;G. Meneghesso;E. Zanoni

  • Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

    Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon

  • Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

    G. Meneghesso;F. Rampazzo;P. Kordos;G. Verzellesi

  • Accelerated Life Test of High Brightness Light Emitting Diodes

    L. Trevisanello;M. Meneghini;G. Mura;M. Vanzi

  • Power GaN Devices

    Matteo Meneghini;Gaudenzio Meneghesso;Enrico Zanoni

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

    M. Meneghini;N. Ronchi;A. Stocco;G. Meneghesso

  • Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

    M. Faqir;G. Verzellesi;G. Meneghesso;E. Zanoni

  • Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

    Isabella Rossetto;Matteo Meneghini;Oliver Hilt;Eldad Bahat-Treidel

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

    Matteo Meneghini;Nicola Trivellin;Gaudenzio Meneghesso;Enrico Zanoni

  • Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

    Gaudenzio Meneghesso;Matteo Meneghini;Enrico Zanoni

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

Frequent Co-Authors

Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)

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