World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
76
Citations
22716
World Ranking
644
National Ranking
101

Materials Science

D-Index
75
Citations
22078
World Ranking
3426
National Ranking
1099

Kevin J. Chen publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kevin J. Chen sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 610 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kevin J. Chen D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kevin J. Chen sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 76 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2014 - IEEE Fellow For contributions to compound semiconductor heterojunction transistor technologies

Overview

Kevin J. Chen is affiliated with the Hong Kong University of Science and Technology in China. Their research focuses on semiconductor devices and materials, particularly gallium nitride (GaN)-based technologies. They have contributed to the fields of engineering and physics, with a notable emphasis on electrical and electronic engineering and condensed matter physics.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Quantum Structures and Devices

Kevin J. Chen has published extensively in several well-known scientific venues. Frequent publication outlets include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Power Electronics
  • Applied Physics Letters
  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices

Notable recent papers by Kevin J. Chen include:

  • Gallium nitride-based complementary logic integrated circuits, 2021, Nature Electronics
  • p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability, 2020, IEEE Electron Device Letters
  • GaN Power Integration Technology and Its Future Prospects, 2023, IEEE Transactions on Electron Devices
  • OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy, 2020, IEEE Electron Device Letters

Frequent collaborators of Kevin J. Chen include:

  • Zheyang Zheng
  • Li Zhang
  • Jin Wei
  • Sirui Feng
  • Tao Chen

In 2014, Kevin J. Chen was named an IEEE Fellow for contributions to compound semiconductor heterojunction transistor technologies.

Best Publications

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

    Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau

  • Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

    Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • 600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

    Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang

  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

    Sen Huang;Qimeng Jiang;Shu Yang;Chunhua Zhou

  • Novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor

    K. J. Chen;K. Maezawa;M. Yamamoto

  • Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

    Hanxing Wang;Jin Wei;Ruiliang Xie;Cheng Liu

  • Gallium nitride-based complementary logic integrated circuits

    Zheyang Zheng;Li Zhang;Wenjie Song;Sirui Feng

  • Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.

    Zhaofu Zhang;Qingkai Qian;Baikui Li;Kevin J. Chen

  • High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

    Wanjun Chen;King-Yuen Wong;Wei Huang;Kevin J. Chen

  • Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron Mobility Transistors

    Sen Huang;Shu Yang;John Roberts;Kevin J. Chen

  • High-Performance Normally-Off ${ m Al}_{2}{ m O}_{3}/{ m GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

    Ye Wang;Maojun Wang;Bing Xie;Cheng P. Wen

  • A Stub Tapped Branch-Line Coupler for Dual-Band Operations

    Hualiang Zhang;K.J. Chen

  • Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

    Chunhua Zhou;Qimeng Jiang;Sen Huang;K. J. Chen

  • High-Quality Interface in ${ m Al}_{2}{ m O}_{3}/{ m GaN}/{ m GaN}/{ m AlGaN}/{ m GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Enhancement-Mode $hboxSi_3hboxN_4hbox/AlGaN/GaN$ MISHFETs

    Ruonan Wang;Yong Cai;Chi-Wai Tang;K.M. Lau

  • Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

    Kevin J. Chen;Chunhua Zhou

  • Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

    Jin Wei;Ruiliang Xie;Han Xu;Hanxing Wang

  • Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

    Wanjun Chen;King-Yuen Wong;K.J. Chen

  • High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

    K.J. Chen;T. Enoki;K. Maezawa;K. Arai

Frequent Co-Authors

Jin Wei
Jin Wei Peking University
Kei May Lau
Kei May Lau Hong Kong University of Science and Technology
Shu Yang
Shu Yang Zhejiang University
Sen Huang
Sen Huang Chinese Academy of Sciences
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Baoling Huang
Baoling Huang Hong Kong University of Science and Technology
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Qian Sun
Qian Sun Chinese Academy of Sciences

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