D-Index & Metrics Best Publications
Electronics and Electrical Engineering
China
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 56 Citations 10,752 363 World Ranking 4125 National Ranking 1044
Electronics and Electrical Engineering D-index 63 Citations 14,564 538 World Ranking 798 National Ranking 91

Research.com Recognitions

Awards & Achievements

2023 - Research.com Electronics and Electrical Engineering in China Leader Award

2014 - IEEE Fellow For contributions to compound semiconductor heterojunction transistor technologies

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

His main research concerns Optoelectronics, High-electron-mobility transistor, Transistor, Electrical engineering and Gallium nitride. His studies in Optoelectronics integrate themes in fields like Threshold voltage, Breakdown voltage and Leakage. He combines subjects such as Transconductance, Cutoff frequency, Surface states, Radio frequency and Amplifier with his study of High-electron-mobility transistor.

The concepts of his Transistor study are interwoven with issues in Electron mobility, Hysteresis, Analytical chemistry, Deposition and Optical polarization. His study in the field of Logic gate, Integrated circuit, Diode and MOSFET also crosses realms of Current density. His work deals with themes such as Power electronics, High voltage and Voltage, which intersect with Gallium nitride.

His most cited work include:

  • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (504 citations)
  • GaN-on-Si Power Technology: Devices and Applications (420 citations)
  • Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (380 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, High-electron-mobility transistor, Transistor, Gallium nitride and Electrical engineering. His Optoelectronics research incorporates elements of Threshold voltage, Algan gan and Breakdown voltage. His Threshold voltage study combines topics in areas such as Ion implantation, Condensed matter physics, MOSFET, Analytical chemistry and Gate dielectric.

Kevin J. Chen has researched High-electron-mobility transistor in several fields, including Field-effect transistor, Transconductance and Leakage. His research in Transistor focuses on subjects like Schottky diode, which are connected to Schottky barrier. The study incorporates disciplines such as Silicon, High voltage, Electronic engineering, Logic gate and Dielectric in addition to Gallium nitride.

He most often published in these fields:

  • Optoelectronics (72.15%)
  • High-electron-mobility transistor (29.21%)
  • Transistor (23.79%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (72.15%)
  • Threshold voltage (17.99%)
  • High-electron-mobility transistor (29.21%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Threshold voltage, High-electron-mobility transistor, Transistor and Condensed matter physics. His Optoelectronics study incorporates themes from Leakage, Gallium nitride, Logic gate and Voltage. His biological study deals with issues like Wide-bandgap semiconductor, which deal with fields such as Gate dielectric.

The Threshold voltage study combines topics in areas such as Impact ionization, Breakdown voltage, Schottky gate, MOSFET and Inverter. His High-electron-mobility transistor research includes themes of Low voltage, Electronic circuit, JFET, Cascode and Power electronics. His Transistor research incorporates themes from Equivalent circuit, Heterojunction, Power semiconductor device and Linearity.

Between 2018 and 2021, his most popular works were:

  • Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (39 citations)
  • Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (21 citations)
  • Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs (18 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Kevin J. Chen mostly deals with Threshold voltage, Optoelectronics, High-electron-mobility transistor, Transistor and Schottky diode. His studies in Threshold voltage integrate themes in fields like Gallium nitride, Breakdown voltage, Condensed matter physics, Schottky barrier and Dielectric. Kevin J. Chen focuses mostly in the field of Gallium nitride, narrowing it down to topics relating to Logic gate and, in certain cases, Silicon and Equivalent circuit.

Particularly relevant to Heterojunction is his body of work in Optoelectronics. Kevin J. Chen works mostly in the field of High-electron-mobility transistor, limiting it down to topics relating to Field-effect transistor and, in certain cases, Semiconductor, Overvoltage, Transient and Cascode, as a part of the same area of interest. His Transistor research focuses on subjects like Annealing, which are linked to Scanning transmission electron microscopy, Transmission electron microscopy, MISFET and Wide-bandgap semiconductor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)

756 Citations

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)

756 Citations

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau.
IEEE Electron Device Letters (2005)

754 Citations

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau.
IEEE Electron Device Letters (2005)

754 Citations

The 2018 GaN power electronics roadmap

H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)

710 Citations

The 2018 GaN power electronics roadmap

H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)

710 Citations

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen.
IEEE Transactions on Electron Devices (2006)

598 Citations

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen.
IEEE Transactions on Electron Devices (2006)

598 Citations

Novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor

K. J. Chen;K. Maezawa;M. Yamamoto.
Applied Physics Letters (1995)

282 Citations

600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang.
IEEE Electron Device Letters (2013)

265 Citations

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