World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
76
Citations
22716
World Ranking
644
National Ranking
100

Materials Science

D-Index
75
Citations
22078
World Ranking
3428
National Ranking
1098

Research.com Recognitions

  • 2014 - IEEE Fellow For contributions to compound semiconductor heterojunction transistor technologies

Overview

Kevin J. Chen is affiliated with the Hong Kong University of Science and Technology in China. Their research focuses on semiconductor devices and materials, particularly gallium nitride (GaN)-based technologies. They have contributed to the fields of engineering and physics, with a notable emphasis on electrical and electronic engineering and condensed matter physics.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Quantum Structures and Devices

Kevin J. Chen has published extensively in several well-known scientific venues. Frequent publication outlets include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Power Electronics
  • Applied Physics Letters
  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices

Notable recent papers by Kevin J. Chen include:

  • Gallium nitride-based complementary logic integrated circuits, 2021, Nature Electronics
  • p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability, 2020, IEEE Electron Device Letters
  • GaN Power Integration Technology and Its Future Prospects, 2023, IEEE Transactions on Electron Devices
  • OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy, 2020, IEEE Electron Device Letters

Frequent collaborators of Kevin J. Chen include:

  • Zheyang Zheng
  • Li Zhang
  • Jin Wei
  • Sirui Feng
  • Tao Chen

In 2014, Kevin J. Chen was named an IEEE Fellow for contributions to compound semiconductor heterojunction transistor technologies.

Best Publications

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

    Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau

  • Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

    Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • 600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

    Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang

  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

    Sen Huang;Qimeng Jiang;Shu Yang;Chunhua Zhou

  • Novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor

    K. J. Chen;K. Maezawa;M. Yamamoto

  • Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

    Hanxing Wang;Jin Wei;Ruiliang Xie;Cheng Liu

  • Gallium nitride-based complementary logic integrated circuits

    Zheyang Zheng;Li Zhang;Wenjie Song;Sirui Feng

  • Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.

    Zhaofu Zhang;Qingkai Qian;Baikui Li;Kevin J. Chen

  • High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

    Wanjun Chen;King-Yuen Wong;Wei Huang;Kevin J. Chen

  • Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron Mobility Transistors

    Sen Huang;Shu Yang;John Roberts;Kevin J. Chen

  • High-Performance Normally-Off ${ m Al}_{2}{ m O}_{3}/{ m GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

    Ye Wang;Maojun Wang;Bing Xie;Cheng P. Wen

  • A Stub Tapped Branch-Line Coupler for Dual-Band Operations

    Hualiang Zhang;K.J. Chen

  • Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

    Chunhua Zhou;Qimeng Jiang;Sen Huang;K. J. Chen

  • High-Quality Interface in ${ m Al}_{2}{ m O}_{3}/{ m GaN}/{ m GaN}/{ m AlGaN}/{ m GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Enhancement-Mode $hboxSi_3hboxN_4hbox/AlGaN/GaN$ MISHFETs

    Ruonan Wang;Yong Cai;Chi-Wai Tang;K.M. Lau

  • Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

    Kevin J. Chen;Chunhua Zhou

  • Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

    Jin Wei;Ruiliang Xie;Han Xu;Hanxing Wang

  • Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

    Wanjun Chen;King-Yuen Wong;K.J. Chen

  • High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

    K.J. Chen;T. Enoki;K. Maezawa;K. Arai

Frequent Co-Authors

Jin Wei
Jin Wei Peking University
Kei May Lau
Kei May Lau Hong Kong University of Science and Technology
Shu Yang
Shu Yang Zhejiang University
Sen Huang
Sen Huang Chinese Academy of Sciences
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Baoling Huang
Baoling Huang Hong Kong University of Science and Technology
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Qian Sun
Qian Sun Chinese Academy of Sciences

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those pursuing a degree in Electronics and Electrical Engineering, exploring related online programs can open diverse career opportunities. Many professionals complement their technical expertise with project management skills, which are highly valued in engineering fields. Accredited programs such as project manager bachelor degree online offer a flexible path to develop these competencies alongside your engineering knowledge.

If time efficiency is a priority, consider online accelerated project management degree programs. These allow you to quickly gain essential skills, making it easier to advance your career in leadership roles within technical industries.

Additionally, for professionals seeking to boost their qualifications without committing to long-term degrees, short courses like short certificate programs that pay well online offer a valuable option. Such certificates can increase employability and salary potential while being manageable alongside work.

Introverts in technical roles can also find rewarding career paths that suit their working style. Research highlights several good paying jobs for introverts within engineering and related sectors, emphasizing that personality does not limit success in the field.

Best Scientists Citing Kevin J. Chen

Trending Scientists

Recently Published Articles