2023 - Research.com Electronics and Electrical Engineering in China Leader Award
2014 - IEEE Fellow For contributions to compound semiconductor heterojunction transistor technologies
His main research concerns Optoelectronics, High-electron-mobility transistor, Transistor, Electrical engineering and Gallium nitride. His studies in Optoelectronics integrate themes in fields like Threshold voltage, Breakdown voltage and Leakage. He combines subjects such as Transconductance, Cutoff frequency, Surface states, Radio frequency and Amplifier with his study of High-electron-mobility transistor.
The concepts of his Transistor study are interwoven with issues in Electron mobility, Hysteresis, Analytical chemistry, Deposition and Optical polarization. His study in the field of Logic gate, Integrated circuit, Diode and MOSFET also crosses realms of Current density. His work deals with themes such as Power electronics, High voltage and Voltage, which intersect with Gallium nitride.
His scientific interests lie mostly in Optoelectronics, High-electron-mobility transistor, Transistor, Gallium nitride and Electrical engineering. His Optoelectronics research incorporates elements of Threshold voltage, Algan gan and Breakdown voltage. His Threshold voltage study combines topics in areas such as Ion implantation, Condensed matter physics, MOSFET, Analytical chemistry and Gate dielectric.
Kevin J. Chen has researched High-electron-mobility transistor in several fields, including Field-effect transistor, Transconductance and Leakage. His research in Transistor focuses on subjects like Schottky diode, which are connected to Schottky barrier. The study incorporates disciplines such as Silicon, High voltage, Electronic engineering, Logic gate and Dielectric in addition to Gallium nitride.
His primary areas of investigation include Optoelectronics, Threshold voltage, High-electron-mobility transistor, Transistor and Condensed matter physics. His Optoelectronics study incorporates themes from Leakage, Gallium nitride, Logic gate and Voltage. His biological study deals with issues like Wide-bandgap semiconductor, which deal with fields such as Gate dielectric.
The Threshold voltage study combines topics in areas such as Impact ionization, Breakdown voltage, Schottky gate, MOSFET and Inverter. His High-electron-mobility transistor research includes themes of Low voltage, Electronic circuit, JFET, Cascode and Power electronics. His Transistor research incorporates themes from Equivalent circuit, Heterojunction, Power semiconductor device and Linearity.
Kevin J. Chen mostly deals with Threshold voltage, Optoelectronics, High-electron-mobility transistor, Transistor and Schottky diode. His studies in Threshold voltage integrate themes in fields like Gallium nitride, Breakdown voltage, Condensed matter physics, Schottky barrier and Dielectric. Kevin J. Chen focuses mostly in the field of Gallium nitride, narrowing it down to topics relating to Logic gate and, in certain cases, Silicon and Equivalent circuit.
Particularly relevant to Heterojunction is his body of work in Optoelectronics. Kevin J. Chen works mostly in the field of High-electron-mobility transistor, limiting it down to topics relating to Field-effect transistor and, in certain cases, Semiconductor, Overvoltage, Transient and Cascode, as a part of the same area of interest. His Transistor research focuses on subjects like Annealing, which are linked to Scanning transmission electron microscopy, Transmission electron microscopy, MISFET and Wide-bandgap semiconductor.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau.
IEEE Electron Device Letters (2005)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau.
IEEE Electron Device Letters (2005)
The 2018 GaN power electronics roadmap
H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)
The 2018 GaN power electronics roadmap
H Amano;Y Baines;Matteo Borga.
Journal of Physics D (2018)
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen.
IEEE Transactions on Electron Devices (2006)
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen.
IEEE Transactions on Electron Devices (2006)
Novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor
K. J. Chen;K. Maezawa;M. Yamamoto.
Applied Physics Letters (1995)
600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang.
IEEE Electron Device Letters (2013)
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