World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5085
World Ranking
5178
National Ranking
760

Qian Sun publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Qian Sun sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 169 publications — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Qian Sun D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Qian Sun sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Qian Sun is affiliated with the Chinese Academy of Sciences in China and specializes in areas spanning engineering, physics and astronomy, and materials science. Their research primarily focuses on the development and study of semiconductor devices and materials, with a particular emphasis on gallium nitride (GaN)-based technologies and related compounds such as gallium oxide (Ga2O3).

The scientist's main fields of study include:

  • Engineering
  • Physics and Astronomy
  • Materials Science

Within these broader fields, Qian Sun's work enters several specialized subfields of study, including:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Qian Sun has contributed extensively to topics related to semiconductor materials and device engineering. The main topics associated with their research include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Microstructure and mechanical properties
  • Aluminum Alloy Microstructure Properties
  • Electromagnetic Effects on Materials

The scientist is often published in high-impact journals and conference venues. Frequent publication venues for Qian Sun are:

  • Applied Physics Letters
  • Journal of Physics D Applied Physics
  • Optics Express
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters

Qian Sun has collaborated frequently with several researchers, including:

  • Jianxun Liu
  • Hui Yang
  • Meixin Feng
  • Xiujian Sun
  • Yu Zhou

Selected recent papers by Qian Sun include:

  • "A review on the GaN-on-Si power electronic devices", 2021, Fundamental Research
  • "A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection", 2020, Microsystems & Nanoengineering
  • "III-nitride semiconductor lasers grown on Si", 2021, Progress in Quantum Electronics
  • "Transfer-printed, tandem microscale light-emitting diodes for full-color displays", 2021, Proceedings of the National Academy of Sciences
  • "High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination", 2021, IEEE Electron Device Letters

Best Publications

  • One-step hydrothermal process to prepare highly crystalline Fe3O4 nanoparticles with improved magnetic properties

    Jun Wang;Jingjun Sun;Qian Sun;Qianwang Chen

  • Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

    Yi Sun;Yi Sun;Kun Zhou;Qian Sun;Jianping Liu

  • Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN

    Qian Sun;Christopher D. Yerino;Benjamin Leung;Jung Han

  • Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

    Yi Sun;Yi Sun;Kun Zhou;Meixin Feng;Meixin Feng;Zengcheng Li

  • Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess

    Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wang

  • Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer

    Zhili Zhang;Guohao Yu;Xiaodong Zhang;Xuguang Deng

  • GaN-on-Si blue/white LEDs: epitaxy, chip, and package

    Qian Sun;Wei Yan;Meixin Feng;Zengcheng Li

  • A conductivity-based selective etching for next generation GaN devices

    Yu Zhang;Sang-Wan Ryu;Chris Yerino;Benjamin Leung

  • Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes

    Z Ren;Q. Sun;Soon-Yong Kwon;J. Han

  • A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection

    Changbo Liu;Yu Zhao;Xue Cai;Yang Xie

  • Nitrogen-polar GaN growth evolution on c-plane sapphire

    Q. Sun;Y. S. Cho;I.-H. Lee;I.-H. Lee;J. Han

  • High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

    Meixin Feng;Jin Wang;Rui Zhou;Qian Sun

  • Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy

    Benjamin Leung;Qian Sun;Christopher D Yerino;Jung Han

  • Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

    J. C. Zhang;D. S. Jiang;Q. Sun;J. F. Wang

  • N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

    Qian Sun;Yong Suk Cho;Bo Hyun Kong;Hyung Koun Cho

  • Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process

    Qian Sun;Benjamin Leung;Christopher D. Yerino;Yu Zhang

  • The fabrication of large-area, free-standing GaN by a novel nanoetching process

    Yu Zhang;Qian Sun;Benjamin Leung;John Simon

  • Reduction of stacking fault density in m-plane GaN grown on SiC

    Y. S. Cho;Q. Sun;I.-H. Lee;I.-H. Lee;T.-S. Ko

  • Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire

    Qian Sun;Bo Hyun Kong;Christopher D. Yerino;Tsung-Shine Ko

Frequent Co-Authors

Jung Han
Jung Han Yale University
In-Hwan Lee
In-Hwan Lee Korea University
Jin Wang
Jin Wang Stony Brook University
Hyung Koun Cho
Hyung Koun Cho Sungkyunkwan University
Xing Sheng
Xing Sheng Tsinghua University
Sen Huang
Sen Huang Chinese Academy of Sciences
Fan Ren
Fan Ren University of Florida
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Liqun Zhang
Liqun Zhang Xi'an Jiaotong University
Stephen J. Pearton
Stephen J. Pearton University of Florida

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Related Online Degrees & Career Pathways

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