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Qian Sun

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 37 5178 4972 760 757 169 5085

Qian Sun publications per year

The chart shows the history of publications by Qian Sun between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Qian Sun published across 29 years, from 1997 to 2025, averaging 10 papers a year. Output peaked at 34 publications in 2025. 55 of the 289 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 34. Peak 34 publications in 2025. 1997: 1 publication 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 1 publication 2004: 0 publications 2005: 4 publications 2006: 4 publications 2007: 6 publications 2008: 7 publications 2009: 14 publications 2010: 8 publications 2011: 7 publications 2012: 6 publications 2013: 6 publications 2014: 3 publications 2015: 5 publications 2016: 19 publications 2017: 20 publications 2018: 16 publications 2019: 20 publications 2020: 19 publications 2021: 20 publications 2022: 22 publications 2023: 26 publications 2024: 21 publications 2025: 34 publications
1997 2025

289 publications in total across all disciplines

View publications per year as a table
Qian Sun: publications per year, 1997 to 2025
Year Publications
1997 1
1998 0
1999 0
2000 0
2001 0
2002 0
2003 1
2004 0
2005 4
2006 4
2007 6
2008 7
2009 14
2010 8
2011 7
2012 6
2013 6
2014 3
2015 5
2016 19
2017 20
2018 16
2019 20
2020 19
2021 20
2022 22
2023 26
2024 21
2025 34
Total 289
Download as CSV

Qian Sun publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Qian Sun sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 169 publications — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 169
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Qian Sun D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Qian Sun sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 37 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220 37
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Qian Sun is affiliated with the Chinese Academy of Sciences in China and specializes in areas spanning engineering, physics and astronomy, and materials science. Their research primarily focuses on the development and study of semiconductor devices and materials, with a particular emphasis on gallium nitride (GaN)-based technologies and related compounds such as gallium oxide (Ga2O3).

The scientist's main fields of study include:

  • Engineering
  • Physics and Astronomy
  • Materials Science

Within these broader fields, Qian Sun's work enters several specialized subfields of study, including:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Qian Sun has contributed extensively to topics related to semiconductor materials and device engineering. The main topics associated with their research include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Microstructure and mechanical properties
  • Aluminum Alloy Microstructure Properties
  • Electromagnetic Effects on Materials

The scientist is often published in high-impact journals and conference venues. Frequent publication venues for Qian Sun are:

  • Applied Physics Letters
  • Journal of Physics D Applied Physics
  • Optics Express
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters

Qian Sun has collaborated frequently with several researchers, including:

  • Jianxun Liu
  • Hui Yang
  • Meixin Feng
  • Xiujian Sun
  • Yu Zhou

Selected recent papers by Qian Sun include:

  • "A review on the GaN-on-Si power electronic devices", 2021, Fundamental Research
  • "A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection", 2020, Microsystems & Nanoengineering
  • "III-nitride semiconductor lasers grown on Si", 2021, Progress in Quantum Electronics
  • "Transfer-printed, tandem microscale light-emitting diodes for full-color displays", 2021, Proceedings of the National Academy of Sciences
  • "High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination", 2021, IEEE Electron Device Letters

Best Publications

  • One-step hydrothermal process to prepare highly crystalline Fe3O4 nanoparticles with improved magnetic properties

    Jun Wang;Jingjun Sun;Qian Sun;Qianwang Chen

  • Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

    Yi Sun;Yi Sun;Kun Zhou;Qian Sun;Jianping Liu

  • Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN

    Qian Sun;Christopher D. Yerino;Benjamin Leung;Jung Han

  • Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

    Yi Sun;Yi Sun;Kun Zhou;Meixin Feng;Meixin Feng;Zengcheng Li

  • Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess

    Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wang

  • Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer

    Zhili Zhang;Guohao Yu;Xiaodong Zhang;Xuguang Deng

  • GaN-on-Si blue/white LEDs: epitaxy, chip, and package

    Qian Sun;Wei Yan;Meixin Feng;Zengcheng Li

  • A conductivity-based selective etching for next generation GaN devices

    Yu Zhang;Sang-Wan Ryu;Chris Yerino;Benjamin Leung

  • Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes

    Z Ren;Q. Sun;Soon-Yong Kwon;J. Han

  • A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection

    Changbo Liu;Yu Zhao;Xue Cai;Yang Xie

  • Nitrogen-polar GaN growth evolution on c-plane sapphire

    Q. Sun;Y. S. Cho;I.-H. Lee;I.-H. Lee;J. Han

  • High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

    Meixin Feng;Jin Wang;Rui Zhou;Qian Sun

  • Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy

    Benjamin Leung;Qian Sun;Christopher D Yerino;Jung Han

  • Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

    J. C. Zhang;D. S. Jiang;Q. Sun;J. F. Wang

  • N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

    Qian Sun;Yong Suk Cho;Bo Hyun Kong;Hyung Koun Cho

  • Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process

    Qian Sun;Benjamin Leung;Christopher D. Yerino;Yu Zhang

  • The fabrication of large-area, free-standing GaN by a novel nanoetching process

    Yu Zhang;Qian Sun;Benjamin Leung;John Simon

  • Reduction of stacking fault density in m-plane GaN grown on SiC

    Y. S. Cho;Q. Sun;I.-H. Lee;I.-H. Lee;T.-S. Ko

  • Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire

    Qian Sun;Bo Hyun Kong;Christopher D. Yerino;Tsung-Shine Ko

Frequent Co-Authors

Jung Han
Jung Han Yale University
In-Hwan Lee
In-Hwan Lee Korea University
Jin Wang
Jin Wang Stony Brook University
Hyung Koun Cho
Hyung Koun Cho Sungkyunkwan University
Xing Sheng
Xing Sheng Tsinghua University
Sen Huang
Sen Huang Chinese Academy of Sciences
Fan Ren
Fan Ren University of Florida
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Liqun Zhang
Liqun Zhang Xi'an Jiaotong University
Stephen J. Pearton
Stephen J. Pearton University of Florida

External Links

Personal website of Qian Sun

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Related Online Degrees & Career Pathways

For students studying Electronics and Electrical Engineering in the USA, exploring complementary online degrees can enhance career prospects and skillsets. A bachelor's degree in project management is especially valuable for engineers aiming to lead complex technological projects, enabling them to manage teams, budgets, and timelines effectively.

Many professionals pursue these options through online degrees for working adults, which offer flexible schedules and accelerated pathways that balance education with job commitments. This flexibility ensures continuous career growth without sacrificing current employment.

Additionally, degrees in instructional design open doors to roles in technical training and education—fields that benefit from engineering knowledge. These programs focus on creating effective learning experiences, which can be critical for corporate training or educational technology companies.

For those interested in skill mastery at a personalized pace, competency based masters degree models allow students to demonstrate their knowledge through assessments, making education more efficient and tailored to individual expertise. This approach is increasingly popular among engineers seeking advanced credentials.

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Emory University

Publications: 26

Yue Hao

Yue Hao

Xidian University

Publications: 24

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 22

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 21

Michael Kneissl

Michael Kneissl

Technical University of Berlin

Publications: 21

Bo Zhang

Bo Zhang

University of Electronic Science and Technology of China

Publications: 20

In-Hwan Lee

In-Hwan Lee

Korea University

Publications: 20

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 20

A. Y. Polyakov

A. Y. Polyakov

National University of Science and Technology

Publications: 20

Liqun Zhang

Liqun Zhang

Xi'an Jiaotong University

Publications: 19

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University of California, Santa Barbara

Publications: 18

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