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Electronics and Electrical Engineering
USA
2026
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Materials Science
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
150
Citations
89372
World Ranking
16
National Ranking
7

Materials Science

D-Index
152
Citations
91930
World Ranking
145
National Ranking
61

Steven P. DenBaars publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Steven P. DenBaars sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,547 publications — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Steven P. DenBaars D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Steven P. DenBaars sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 150 D-Index — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2026 - Research.com Materials Science in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Materials Science in United States Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award
  • 2013 - Fellow, National Academy of Inventors
  • 2012 - Member of the National Academy of Engineering For contributions to gallium nitride-based materials and devices for solid state lighting and displays.
  • 2005 - IEEE Fellow For the development of nitride materials and devices.

Overview

Steven P. DenBaars is affiliated with the University of California, Santa Barbara in the United States. Their research primarily focuses on semiconductor materials and devices, with significant work on gallium nitride (GaN)-based semiconductor devices and materials. Their expertise spans multiple fields, including Physics and Astronomy, Engineering, and Materials Science.

The scientist has contributed extensively to several subfields, notably Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

Key topics covered in their research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Photocathodes and Microchannel Plates

Some of the recent papers associated with their research are:

  • "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter" (2020), Applied Physics Letters
  • "Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation" (2020), Applied Physics Letters
  • "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments" (2020), Optics Express
  • "Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays" (2020), Applied Physics Express
  • "Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces" (2020), Nature Photonics

Their frequent co-authors include Shuji Nakamura, James S. Speck, Matthew S. Wong, Hongjian Li, and Panpan Li.

Steven P. DenBaars has published widely in several scientific journals, with frequent contributions to:

  • Applied Physics Letters
  • Optics Express
  • Crystals
  • Applied Physics Express
  • Semiconductor Science and Technology

Awards received by Steven P. DenBaars include:

  • Fellow, National Academy of Inventors (2013)
  • Member of the National Academy of Engineering (2012) for contributions to gallium nitride-based materials and devices for solid state lighting and displays
  • IEEE Fellow (2005) for the development of nitride materials and devices

Best Publications

  • Prospects for LED lighting

    Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura

  • Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

    D. Leonard;M. Krishnamurthy;C. M. Reaves;S. P. Denbaars

  • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

    T. Fujii;Y. Gao;R. Sharma;E. L. Hu

  • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

    J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars

  • Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

    B. Heying;X. H. Wu;S. Keller;Y. Li

  • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

    J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas

  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

    Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • AlGaN/AlN/GaN high-power microwave HEMT

    L. Shen;S. Heikman;B. Moran;R. Coffie

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

    X. H. Wu;C. R. Elsass;A. Abare;M. Mack

  • POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

    I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury

  • Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

    X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller

  • Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

    M. D. Craven;S. H. Lim;F. Wu;J. S. Speck

  • Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

    S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

    Carl J. Neufeld;Nikholas G. Toledo;Samantha C. Cruz;Michael Iza

  • Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

    E. J. Tarsa;B. Heying;X. H. Wu;P. Fini

  • Dislocation mediated surface morphology of GaN

    B. Heying;E. J. Tarsa;C. R. Elsass;P. Fini

  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

Frequent Co-Authors

Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
Feng Wu
Feng Wu Huazhong University of Science and Technology
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
John E. Bowers
John E. Bowers University of California, Santa Barbara
Daniel F. Feezell
Daniel F. Feezell University of New Mexico

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