H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 120 Citations 52,320 883 World Ranking 17 National Ranking 8
Materials Science H-index 138 Citations 72,183 1,119 World Ranking 82 National Ranking 42

Research.com Recognitions

Awards & Achievements

2013 - Fellow, National Academy of Inventors

2012 - Member of the National Academy of Engineering For contributions to gallium nitride-based materials and devices for solid state lighting and displays.

2005 - IEEE Fellow For the development of nitride materials and devices.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Optics
  • Optoelectronics

The scientist’s investigation covers issues in Optoelectronics, Chemical vapor deposition, Diode, Light-emitting diode and Optics. His research on Optoelectronics focuses in particular on Wide-bandgap semiconductor. His Chemical vapor deposition study incorporates themes from Metalorganic vapour phase epitaxy, Doping, Crystallography, Analytical chemistry and Sapphire.

His work on Blue laser as part of general Diode research is often related to Voltage droop, thus linking different fields of science. His work carried out in the field of Light-emitting diode brings together such families of science as Wavelength, Electroluminescence, Phosphor and Quantum efficiency. The Optics study combines topics in areas such as Etching, Semiconductor and Voltage.

His most cited work include:

  • Prospects for LED lighting (1397 citations)
  • Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces (1331 citations)
  • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening (1266 citations)

What are the main themes of his work throughout his whole career to date?

Steven P. DenBaars focuses on Optoelectronics, Light-emitting diode, Optics, Diode and Chemical vapor deposition. Specifically, his work in Optoelectronics is concerned with the study of Wide-bandgap semiconductor. His Wide-bandgap semiconductor study deals with Heterojunction intersecting with Electron mobility.

His research in Light-emitting diode intersects with topics in Wavelength, Electroluminescence, Substrate, Nitride and Quantum efficiency. His studies deal with areas such as Current density and Cladding as well as Diode. He focuses mostly in the field of Chemical vapor deposition, narrowing it down to topics relating to Epitaxy and, in certain cases, Dislocation and Crystallography.

He most often published in these fields:

  • Optoelectronics (74.86%)
  • Light-emitting diode (23.57%)
  • Optics (21.92%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (74.86%)
  • Light-emitting diode (23.57%)
  • Diode (21.06%)

In recent papers he was focusing on the following fields of study:

Steven P. DenBaars spends much of his time researching Optoelectronics, Light-emitting diode, Diode, Optics and Laser. His studies in Optoelectronics integrate themes in fields like Quantum well, Metalorganic vapour phase epitaxy and Nitride. He interconnects Wavelength, Indium, Epitaxy, Sapphire and Substrate in the investigation of issues within Light-emitting diode.

In the field of Diode, his study on Blue laser overlaps with subjects such as Voltage droop. His Optics study combines topics from a wide range of disciplines, such as Gallium nitride and Phosphor. His study in Chemical vapor deposition is interdisciplinary in nature, drawing from both Electron mobility and Analytical chemistry.

Between 2014 and 2021, his most popular works were:

  • Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact (94 citations)
  • Hybrid tunnel junction contacts to III–nitride light-emitting diodes (81 citations)
  • 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. (81 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Optics
  • Semiconductor

His primary areas of investigation include Optoelectronics, Light-emitting diode, Optics, Diode and Quantum efficiency. His work deals with themes such as Quantum well, Laser and Nitride, which intersect with Optoelectronics. Steven P. DenBaars combines subjects such as Molecular physics, Photoluminescence, Optical polarization and Lasing threshold with his study of Quantum well.

His study on Light-emitting diode also encompasses disciplines like

  • Tunnel junction together with Molecular beam epitaxy and Epitaxy,
  • Current density which is related to area like Indium and Luminous efficacy. His Quantum efficiency research integrates issues from Etching, Wavelength and Passivation. The various areas that Steven P. DenBaars examines in his Chemical vapor deposition study include Metalorganic vapour phase epitaxy, Electron mobility, Thin layers, Quantum dot and Deposition.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

D. Leonard;M. Krishnamurthy;C. M. Reaves;S. P. Denbaars.
Applied Physics Letters (1993)

2271 Citations

Prospects for LED lighting

Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura.
Nature Photonics (2009)

1722 Citations

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

T. Fujii;Y. Gao;R. Sharma;E. L. Hu.
Applied Physics Letters (2004)

1637 Citations

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)

1059 Citations

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

B. Heying;X. H. Wu;S. Keller;Y. Li.
Applied Physics Letters (1996)

1033 Citations

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas.
Applied Physics Letters (1997)

775 Citations

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song.
Applied Physics Letters (1998)

750 Citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

717 Citations

Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

M. D. Craven;S. H. Lim;F. Wu;J. S. Speck.
Applied Physics Letters (2002)

589 Citations

Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller.
Journal of Applied Physics (1996)

530 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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