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Electronics and Electrical Engineering
USA
2026
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Materials Science
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
150
Citations
89372
World Ranking
16
National Ranking
7

Materials Science

D-Index
152
Citations
91930
World Ranking
145
National Ranking
61

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2026 - Research.com Materials Science in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Materials Science in United States Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award
  • 2013 - Fellow, National Academy of Inventors
  • 2012 - Member of the National Academy of Engineering For contributions to gallium nitride-based materials and devices for solid state lighting and displays.
  • 2005 - IEEE Fellow For the development of nitride materials and devices.

Overview

Steven P. DenBaars is affiliated with the University of California, Santa Barbara in the United States. Their research primarily focuses on semiconductor materials and devices, with significant work on gallium nitride (GaN)-based semiconductor devices and materials. Their expertise spans multiple fields, including Physics and Astronomy, Engineering, and Materials Science.

The scientist has contributed extensively to several subfields, notably Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

Key topics covered in their research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Photocathodes and Microchannel Plates

Some of the recent papers associated with their research are:

  • "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter" (2020), Applied Physics Letters
  • "Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation" (2020), Applied Physics Letters
  • "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments" (2020), Optics Express
  • "Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays" (2020), Applied Physics Express
  • "Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces" (2020), Nature Photonics

Their frequent co-authors include Shuji Nakamura, James S. Speck, Matthew S. Wong, Hongjian Li, and Panpan Li.

Steven P. DenBaars has published widely in several scientific journals, with frequent contributions to:

  • Applied Physics Letters
  • Optics Express
  • Crystals
  • Applied Physics Express
  • Semiconductor Science and Technology

Awards received by Steven P. DenBaars include:

  • Fellow, National Academy of Inventors (2013)
  • Member of the National Academy of Engineering (2012) for contributions to gallium nitride-based materials and devices for solid state lighting and displays
  • IEEE Fellow (2005) for the development of nitride materials and devices

Best Publications

  • Prospects for LED lighting

    Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura

  • Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

    D. Leonard;M. Krishnamurthy;C. M. Reaves;S. P. Denbaars

  • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

    T. Fujii;Y. Gao;R. Sharma;E. L. Hu

  • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

    J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars

  • Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

    B. Heying;X. H. Wu;S. Keller;Y. Li

  • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

    J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas

  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

    Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • AlGaN/AlN/GaN high-power microwave HEMT

    L. Shen;S. Heikman;B. Moran;R. Coffie

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

    X. H. Wu;C. R. Elsass;A. Abare;M. Mack

  • POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

    I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury

  • Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

    X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller

  • Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

    M. D. Craven;S. H. Lim;F. Wu;J. S. Speck

  • Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

    S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

    Carl J. Neufeld;Nikholas G. Toledo;Samantha C. Cruz;Michael Iza

  • Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

    E. J. Tarsa;B. Heying;X. H. Wu;P. Fini

  • Dislocation mediated surface morphology of GaN

    B. Heying;E. J. Tarsa;C. R. Elsass;P. Fini

  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

Frequent Co-Authors

Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
Feng Wu
Feng Wu Huazhong University of Science and Technology
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
John E. Bowers
John E. Bowers University of California, Santa Barbara
Daniel F. Feezell
Daniel F. Feezell University of New Mexico

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