2023 - Research.com Materials Science in United States Leader Award
2023 - Research.com Electronics and Electrical Engineering in United States Leader Award
2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
2013 - Fellow, National Academy of Inventors
2012 - Member of the National Academy of Engineering For contributions to gallium nitride-based materials and devices for solid state lighting and displays.
2005 - IEEE Fellow For the development of nitride materials and devices.
The scientist’s investigation covers issues in Optoelectronics, Chemical vapor deposition, Diode, Light-emitting diode and Optics. His research on Optoelectronics focuses in particular on Wide-bandgap semiconductor. His Chemical vapor deposition study incorporates themes from Metalorganic vapour phase epitaxy, Doping, Crystallography, Analytical chemistry and Sapphire.
His work on Blue laser as part of general Diode research is often related to Voltage droop, thus linking different fields of science. His work carried out in the field of Light-emitting diode brings together such families of science as Wavelength, Electroluminescence, Phosphor and Quantum efficiency. The Optics study combines topics in areas such as Etching, Semiconductor and Voltage.
Steven P. DenBaars focuses on Optoelectronics, Light-emitting diode, Optics, Diode and Chemical vapor deposition. Specifically, his work in Optoelectronics is concerned with the study of Wide-bandgap semiconductor. His Wide-bandgap semiconductor study deals with Heterojunction intersecting with Electron mobility.
His research in Light-emitting diode intersects with topics in Wavelength, Electroluminescence, Substrate, Nitride and Quantum efficiency. His studies deal with areas such as Current density and Cladding as well as Diode. He focuses mostly in the field of Chemical vapor deposition, narrowing it down to topics relating to Epitaxy and, in certain cases, Dislocation and Crystallography.
Steven P. DenBaars spends much of his time researching Optoelectronics, Light-emitting diode, Diode, Optics and Laser. His studies in Optoelectronics integrate themes in fields like Quantum well, Metalorganic vapour phase epitaxy and Nitride. He interconnects Wavelength, Indium, Epitaxy, Sapphire and Substrate in the investigation of issues within Light-emitting diode.
In the field of Diode, his study on Blue laser overlaps with subjects such as Voltage droop. His Optics study combines topics from a wide range of disciplines, such as Gallium nitride and Phosphor. His study in Chemical vapor deposition is interdisciplinary in nature, drawing from both Electron mobility and Analytical chemistry.
His primary areas of investigation include Optoelectronics, Light-emitting diode, Optics, Diode and Quantum efficiency. His work deals with themes such as Quantum well, Laser and Nitride, which intersect with Optoelectronics. Steven P. DenBaars combines subjects such as Molecular physics, Photoluminescence, Optical polarization and Lasing threshold with his study of Quantum well.
His study on Light-emitting diode also encompasses disciplines like
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
D. Leonard;M. Krishnamurthy;C. M. Reaves;S. P. Denbaars.
Applied Physics Letters (1993)
Prospects for LED lighting
Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura.
Nature Photonics (2009)
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
T. Fujii;Y. Gao;R. Sharma;E. L. Hu.
Applied Physics Letters (2004)
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
B. Heying;X. H. Wu;S. Keller;Y. Li.
Applied Physics Letters (1996)
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas.
Applied Physics Letters (1997)
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song.
Applied Physics Letters (1998)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
M. D. Craven;S. H. Lim;F. Wu;J. S. Speck.
Applied Physics Letters (2002)
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller.
Journal of Applied Physics (1996)
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