Nicolas Grandjean focuses on Optoelectronics, Molecular beam epitaxy, Photoluminescence, Wide-bandgap semiconductor and Quantum well. His studies deal with areas such as Sapphire, High-electron-mobility transistor and Epitaxy as well as Optoelectronics. His studies in Molecular beam epitaxy integrate themes in fields like Electron diffraction, Reflection high-energy electron diffraction, Quantum-confined Stark effect and Analytical chemistry.
His Photoluminescence research includes themes of Quantum dot, Exciton, Wurtzite crystal structure and Whispering-gallery wave. The study incorporates disciplines such as Cathodoluminescence and Gallium nitride in addition to Wide-bandgap semiconductor. His Quantum well study combines topics in areas such as Oscillator strength, Luminescence, Condensed matter physics, Band gap and Atomic physics.
His primary scientific interests are in Optoelectronics, Quantum well, Photoluminescence, Condensed matter physics and Molecular beam epitaxy. The Optoelectronics study combines topics in areas such as Gallium nitride, Optics and Epitaxy. Nicolas Grandjean usually deals with Quantum well and limits it to topics linked to Exciton and Atomic physics and Cathodoluminescence.
His Photoluminescence research incorporates themes from Luminescence, Spectroscopy, Quantum dot, Molecular physics and Wurtzite crystal structure. The concepts of his Condensed matter physics study are interwoven with issues in Polarization, Electron and Electric field. His Molecular beam epitaxy research incorporates elements of Light-emitting diode, Reflection high-energy electron diffraction, Analytical chemistry, Sapphire and Nitride.
Optoelectronics, Quantum well, Photoluminescence, Exciton and Condensed matter physics are his primary areas of study. His research investigates the connection between Optoelectronics and topics such as Laser that intersect with problems in Layer. The various areas that Nicolas Grandjean examines in his Quantum well study include Spontaneous emission, Heterojunction, Excitation, Electron and Polar.
His Photoluminescence research is multidisciplinary, relying on both Scattering, Indium, Light emission, Auger effect and Molecular physics. His Condensed matter physics research includes elements of Scanning transmission electron microscopy and Cleavage. His research in Wide-bandgap semiconductor intersects with topics in Molecular beam epitaxy, Epitaxy and Lattice.
Nicolas Grandjean mostly deals with Optoelectronics, Quantum well, Wide-bandgap semiconductor, Light-emitting diode and Photoluminescence. As part of his studies on Optoelectronics, Nicolas Grandjean often connects relevant subjects like Molecular beam epitaxy. His Quantum well research is multidisciplinary, incorporating elements of Electron, Spontaneous emission, Excitation and Condensed matter physics.
In the field of Condensed matter physics, his study on Exciton overlaps with subjects such as Realization and Experimental proof. His work carried out in the field of Light-emitting diode brings together such families of science as Near ultraviolet and Quantum efficiency. His Photoluminescence research includes themes of Auger effect, Spectroscopy and Metalorganic vapour phase epitaxy.
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Room-temperature polariton lasing in semiconductor microcavities.
S. Christopoulos;G. Baldassarri Höger von Högersthal;A. J. D. Grundy;P. G. Lagoudakis.
Physical Review Letters (2007)
TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN
M. Leroux;N. Grandjean;B. Beaumont;G. Nataf.
Journal of Applied Physics (1999)
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.
Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies.
Physical Review B (1998)
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py.
Applied Physics Letters (2006)
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux.
Journal of Applied Physics (1999)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R. Butte;J.-F. Carlin;E. Feltin;M. Gonschorek.
Journal of Physics D (2007)
From visible to white light emission by GaN quantum dots on Si(111) substrate
B. Damilano;N. Grandjean;F. Semond;J. Massies.
Applied Physics Letters (1999)
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio.
Applied Physics Letters (2001)
Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
N. Grandjean;J. Massies;M. Leroux.
Applied Physics Letters (1996)
Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity
Gabriel Christmann;Raphaël Butté;Eric Feltin;Jean-François Carlin.
Applied Physics Letters (2008)
Centre national de la recherche scientifique, CNRS
Centre national de la recherche scientifique, CNRS
University of Montpellier
University of Ulm
Polish Academy of Sciences
Polish Academy of Sciences
TU Wien
ETH Zurich
University of Paris-Saclay
École Polytechnique Fédérale de Lausanne
Profile was last updated on December 6th, 2021.
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