World's Best Scientists 2026 revealed!
Award Badge
Electronics and Electrical Engineering
Switzerland
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
21987
World Ranking
538
National Ranking
15

Materials Science

D-Index
84
Citations
23957
World Ranking
2275
National Ranking
39

Physics

D-Index
84
Citations
24275
World Ranking
2691
National Ranking
63

Research.com Recognitions

  • 2022 - Research.com Electronics and Electrical Engineering in Switzerland Leader Award

Overview

Nicolas Grandjean is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their research primarily covers areas within Physics and Astronomy as well as Engineering. The scientist's work spans various subfields including Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, and Biomedical Engineering.

The main topics in Nicolas Grandjean's research involve GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices more broadly, ZnO doping and properties, Ga2O3 and related materials, Photonic and Optical Devices, and Advanced Fiber Laser Technologies.

Their recent publication record includes the following papers:

  • Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum, 2020, Optica
  • Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon, 2020, ACS Photonics
  • Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence, 2021, Nano Letters
  • Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots, 2022, arXiv (Cornell University)
  • Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics, 2021, Journal of Physics D Applied Physics

Nicolas Grandjean frequently publishes in venues such as:

  • arXiv (Cornell University)
  • Journal of Physics D Applied Physics
  • Applied Physics Letters
  • Physical review. B./Physical review. B
  • Nano Letters

Among the researchers with whom Nicolas Grandjean has regularly collaborated are R. Butté, J.-F. Carlin, Gordon Callsen, Camille Haller, and Sebastian Tamariz.

Best Publications

  • Room-temperature polariton lasing in semiconductor microcavities.

    S. Christopoulos;G. Baldassarri Höger von Högersthal;A. J. D. Grundy;P. G. Lagoudakis

  • TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

    M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  • Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

    Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  • High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

    M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py

  • Current status of AlInN layers lattice-matched to GaN for photonics and electronics

    R. Butte;J.-F. Carlin;E. Feltin;M. Gonschorek

  • Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

    N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

  • From visible to white light emission by GaN quantum dots on Si(111) substrate

    B. Damilano;N. Grandjean;F. Semond;J. Massies

  • High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

    Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio

  • Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

    Gabriel Christmann;Raphaël Butté;Eric Feltin;Jean-François Carlin

  • Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser

    J. J. Baumberg;A. V. Kavokin;S. Christopoulos;A. J. D. Grundy

  • Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

    N. Grandjean;J. Massies;M. Leroux

  • Barrier-width dependence of group-III nitrides quantum-well transition energies

    Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

    Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  • 205-GHz (Al,In)N/GaN HEMTs

    Haifeng Sun;A R Alt;H Benedickter;E Feltin

  • Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

    F. Semond;Y. Cordier;N. Grandjean;F. Natali

  • Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆

    N. Grandjean;J. Massies

  • Progresses in III‐Nitride Distributed Bragg Reflectors and Microcavities Using AlInN/GaN Materials

    Jean‐François Carlin;Christoph Zellweger;Julien Dorsaz;Sylvain Nicolay

  • Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)

    M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py

  • DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

    N. Grandjean;J. Massies;V. H. Etgens

Frequent Co-Authors

Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Mathieu Leroux
Mathieu Leroux Centre national de la recherche scientifique, CNRS
Bernard Gil
Bernard Gil University of Montpellier
Erhard Kohn
Erhard Kohn North Carolina State University
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Izabella Grzegory
Izabella Grzegory Polish Academy of Sciences
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Marc Ilegems
Marc Ilegems École Polytechnique Fédérale de Lausanne

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Pursuing a degree in Electronics and Electrical Engineering opens doors to diverse career opportunities. Many students seek flexible options, making online education a popular choice. For those balancing unique life situations, programs tailored for military families offer essential support, such as military spouse online college options designed to provide accessibility and understanding of their needs.

Flexibility extends further with institutions offering frequent enrollment opportunities. If you prefer to start your studies without waiting for traditional semester dates, exploring the best online colleges with weekly start dates can help you begin your educational journey at your own pace.

For those aiming for quick skill enhancement, shorter credential programs are increasingly valuable. Considering 6-month certificate programs that pay well can be a strategic move to enter the workforce faster or upgrade your expertise, especially in specialized technical roles within electronics and electrical fields.

Additionally, many roles in electronics and electrical engineering suit individuals who thrive in calm, focused environments. For introverts, it’s worth exploring high paying careers for introverts that align well with the technical and analytical nature of this discipline.

Best Scientists Citing Nicolas Grandjean

Trending Scientists