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Electronics and Electrical Engineering
Switzerland
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
21987
World Ranking
538
National Ranking
15

Materials Science

D-Index
84
Citations
23957
World Ranking
2273
National Ranking
40

Physics

D-Index
84
Citations
24275
World Ranking
2691
National Ranking
63

Nicolas Grandjean publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Nicolas Grandjean sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 610 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Nicolas Grandjean D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Nicolas Grandjean sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 80 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Electronics and Electrical Engineering in Switzerland Leader Award

Overview

Nicolas Grandjean is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their research primarily covers areas within Physics and Astronomy as well as Engineering. The scientist's work spans various subfields including Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, and Biomedical Engineering.

The main topics in Nicolas Grandjean's research involve GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices more broadly, ZnO doping and properties, Ga2O3 and related materials, Photonic and Optical Devices, and Advanced Fiber Laser Technologies.

Their recent publication record includes the following papers:

  • Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum, 2020, Optica
  • Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon, 2020, ACS Photonics
  • Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence, 2021, Nano Letters
  • Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots, 2022, arXiv (Cornell University)
  • Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics, 2021, Journal of Physics D Applied Physics

Nicolas Grandjean frequently publishes in venues such as:

  • arXiv (Cornell University)
  • Journal of Physics D Applied Physics
  • Applied Physics Letters
  • Physical review. B./Physical review. B
  • Nano Letters

Among the researchers with whom Nicolas Grandjean has regularly collaborated are R. Butté, J.-F. Carlin, Gordon Callsen, Camille Haller, and Sebastian Tamariz.

Best Publications

  • Room-temperature polariton lasing in semiconductor microcavities.

    S. Christopoulos;G. Baldassarri Höger von Högersthal;A. J. D. Grundy;P. G. Lagoudakis

  • TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

    M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  • Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

    Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  • High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

    M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py

  • Current status of AlInN layers lattice-matched to GaN for photonics and electronics

    R. Butte;J.-F. Carlin;E. Feltin;M. Gonschorek

  • Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

    N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

  • From visible to white light emission by GaN quantum dots on Si(111) substrate

    B. Damilano;N. Grandjean;F. Semond;J. Massies

  • High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

    Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio

  • Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

    Gabriel Christmann;Raphaël Butté;Eric Feltin;Jean-François Carlin

  • Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser

    J. J. Baumberg;A. V. Kavokin;S. Christopoulos;A. J. D. Grundy

  • Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

    N. Grandjean;J. Massies;M. Leroux

  • Barrier-width dependence of group-III nitrides quantum-well transition energies

    Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

    Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  • 205-GHz (Al,In)N/GaN HEMTs

    Haifeng Sun;A R Alt;H Benedickter;E Feltin

  • Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

    F. Semond;Y. Cordier;N. Grandjean;F. Natali

  • Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆

    N. Grandjean;J. Massies

  • Progresses in III‐Nitride Distributed Bragg Reflectors and Microcavities Using AlInN/GaN Materials

    Jean‐François Carlin;Christoph Zellweger;Julien Dorsaz;Sylvain Nicolay

  • Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)

    M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py

  • DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

    N. Grandjean;J. Massies;V. H. Etgens

Frequent Co-Authors

Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Mathieu Leroux
Mathieu Leroux Centre national de la recherche scientifique, CNRS
Bernard Gil
Bernard Gil University of Montpellier
Erhard Kohn
Erhard Kohn North Carolina State University
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Izabella Grzegory
Izabella Grzegory Polish Academy of Sciences
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Marc Ilegems
Marc Ilegems École Polytechnique Fédérale de Lausanne

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