2022 - Research.com Electronics and Electrical Engineering in Switzerland Leader Award
His research combines Diode and Optoelectronics. His study ties his expertise on Optoelectronics together with the subject of Diode. His research ties Composite material and Layer (electronics) together. His Epitaxy research extends to the thematically linked field of Composite material. Nicolas Grandjean combines Optics and Diffraction in his research. Nicolas Grandjean merges Diffraction with Optics in his research. As part of his studies on Nanotechnology, Nicolas Grandjean often connects relevant subjects like Molecular beam epitaxy. With his scientific publications, his incorporates both Wide-bandgap semiconductor and Electron mobility. In his research, he performs multidisciplinary study on Electron mobility and Wide-bandgap semiconductor.
Nicolas Grandjean applies his multidisciplinary studies on Optoelectronics and Semiconductor in his research. His Optics study frequently draws connections to adjacent fields such as Photoluminescence. In his works, he conducts interdisciplinary research on Photoluminescence and Laser. The study of Laser is intertwined with the study of Sapphire in a number of ways. His Sapphire study frequently links to adjacent areas such as Optics. His study connects Gallium nitride and Nanotechnology. His research combines Layer (electronics) and Gallium nitride. His Composite material research extends to the thematically linked field of Layer (electronics). Composite material is closely attributed to Epitaxy in his study.
His Polarization (electrochemistry) research focuses on Physical chemistry and how it connects with Electrode. His research on Electrode often connects related areas such as Physical chemistry. As part of his inquiry into Epitaxy, Gallium nitride and Nitride, Nicolas Grandjean is doing Layer (electronics) research. Nicolas Grandjean regularly links together related areas like Layer (electronics) in his Epitaxy studies. His work on Gallium nitride is being expanded to include thematically relevant topics such as Nanotechnology. His Nanotechnology study frequently draws parallels with other fields, such as Nitride. His study on Optoelectronics is mostly dedicated to connecting different topics, such as Heterojunction. Much of his study explores Optics relationship to Radiative transfer. His study on Radiative transfer is mostly dedicated to connecting different topics, such as Optics.
As part of his inquiry into Auger effect and Electron density, Nicolas Grandjean is doing Electron research. While working on this project, he studies both Auger effect and Electron. He regularly links together related areas like Indium in his Optoelectronics studies. His research on Indium frequently connects to adjacent areas such as Optoelectronics. He undertakes multidisciplinary studies into Wide-bandgap semiconductor and Gallium nitride in his work. His multidisciplinary approach integrates Gallium nitride and Wide-bandgap semiconductor in his work. He performs integrative study on Laser and Spontaneous emission in his works. In his work, he performs multidisciplinary research in Quantum mechanics and Quantum. Nicolas Grandjean performs multidisciplinary study in Quantum and Quantum mechanics in his work.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Room-temperature polariton lasing in semiconductor microcavities.
S. Christopoulos;G. Baldassarri Höger von Högersthal;A. J. D. Grundy;P. G. Lagoudakis.
Physical Review Letters (2007)
TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN
M. Leroux;N. Grandjean;B. Beaumont;G. Nataf.
Journal of Applied Physics (1999)
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.
Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies.
Physical Review B (1998)
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py.
Applied Physics Letters (2006)
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux.
Journal of Applied Physics (1999)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R. Butte;J.-F. Carlin;E. Feltin;M. Gonschorek.
Journal of Physics D (2007)
From visible to white light emission by GaN quantum dots on Si(111) substrate
B. Damilano;N. Grandjean;F. Semond;J. Massies.
Applied Physics Letters (1999)
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio.
Applied Physics Letters (2001)
Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
N. Grandjean;J. Massies;M. Leroux.
Applied Physics Letters (1996)
Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity
Gabriel Christmann;Raphaël Butté;Eric Feltin;Jean-François Carlin.
Applied Physics Letters (2008)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: