D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 68 Citations 15,628 377 World Ranking 322 National Ranking 8
Materials Science D-index 73 Citations 18,564 468 World Ranking 1514 National Ranking 24
Physics D-index 74 Citations 19,244 488 World Ranking 2768 National Ranking 61

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

Nicolas Grandjean focuses on Optoelectronics, Molecular beam epitaxy, Photoluminescence, Wide-bandgap semiconductor and Quantum well. His studies deal with areas such as Sapphire, High-electron-mobility transistor and Epitaxy as well as Optoelectronics. His studies in Molecular beam epitaxy integrate themes in fields like Electron diffraction, Reflection high-energy electron diffraction, Quantum-confined Stark effect and Analytical chemistry.

His Photoluminescence research includes themes of Quantum dot, Exciton, Wurtzite crystal structure and Whispering-gallery wave. The study incorporates disciplines such as Cathodoluminescence and Gallium nitride in addition to Wide-bandgap semiconductor. His Quantum well study combines topics in areas such as Oscillator strength, Luminescence, Condensed matter physics, Band gap and Atomic physics.

His most cited work include:

  • Room-temperature polariton lasing in semiconductor microcavities. (597 citations)
  • TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN (382 citations)
  • Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. (332 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Quantum well, Photoluminescence, Condensed matter physics and Molecular beam epitaxy. The Optoelectronics study combines topics in areas such as Gallium nitride, Optics and Epitaxy. Nicolas Grandjean usually deals with Quantum well and limits it to topics linked to Exciton and Atomic physics and Cathodoluminescence.

His Photoluminescence research incorporates themes from Luminescence, Spectroscopy, Quantum dot, Molecular physics and Wurtzite crystal structure. The concepts of his Condensed matter physics study are interwoven with issues in Polarization, Electron and Electric field. His Molecular beam epitaxy research incorporates elements of Light-emitting diode, Reflection high-energy electron diffraction, Analytical chemistry, Sapphire and Nitride.

He most often published in these fields:

  • Optoelectronics (60.75%)
  • Quantum well (35.52%)
  • Photoluminescence (30.45%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (60.75%)
  • Quantum well (35.52%)
  • Photoluminescence (30.45%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Quantum well, Photoluminescence, Exciton and Condensed matter physics are his primary areas of study. His research investigates the connection between Optoelectronics and topics such as Laser that intersect with problems in Layer. The various areas that Nicolas Grandjean examines in his Quantum well study include Spontaneous emission, Heterojunction, Excitation, Electron and Polar.

His Photoluminescence research is multidisciplinary, relying on both Scattering, Indium, Light emission, Auger effect and Molecular physics. His Condensed matter physics research includes elements of Scanning transmission electron microscopy and Cleavage. His research in Wide-bandgap semiconductor intersects with topics in Molecular beam epitaxy, Epitaxy and Lattice.

Between 2015 and 2021, his most popular works were:

  • Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency (52 citations)
  • GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells (48 citations)
  • Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth (42 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Nicolas Grandjean mostly deals with Optoelectronics, Quantum well, Wide-bandgap semiconductor, Light-emitting diode and Photoluminescence. As part of his studies on Optoelectronics, Nicolas Grandjean often connects relevant subjects like Molecular beam epitaxy. His Quantum well research is multidisciplinary, incorporating elements of Electron, Spontaneous emission, Excitation and Condensed matter physics.

In the field of Condensed matter physics, his study on Exciton overlaps with subjects such as Realization and Experimental proof. His work carried out in the field of Light-emitting diode brings together such families of science as Near ultraviolet and Quantum efficiency. His Photoluminescence research includes themes of Auger effect, Spectroscopy and Metalorganic vapour phase epitaxy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Room-temperature polariton lasing in semiconductor microcavities.

S. Christopoulos;G. Baldassarri Höger von Högersthal;A. J. D. Grundy;P. G. Lagoudakis.
Physical Review Letters (2007)

963 Citations

TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

M. Leroux;N. Grandjean;B. Beaumont;G. Nataf.
Journal of Applied Physics (1999)

551 Citations

Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies.
Physical Review B (1998)

437 Citations

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py.
Applied Physics Letters (2006)

422 Citations

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux.
Journal of Applied Physics (1999)

368 Citations

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

R. Butte;J.-F. Carlin;E. Feltin;M. Gonschorek.
Journal of Physics D (2007)

349 Citations

From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano;N. Grandjean;F. Semond;J. Massies.
Applied Physics Letters (1999)

334 Citations

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio.
Applied Physics Letters (2001)

307 Citations

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

N. Grandjean;J. Massies;M. Leroux.
Applied Physics Letters (1996)

271 Citations

Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

Gabriel Christmann;Raphaël Butté;Eric Feltin;Jean-François Carlin.
Applied Physics Letters (2008)

270 Citations

Best Scientists Citing Nicolas Grandjean

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 170

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

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Mathieu Leroux

Mathieu Leroux

Centre national de la recherche scientifique, CNRS

Publications: 107

Jean Massies

Jean Massies

Centre national de la recherche scientifique, CNRS

Publications: 106

Eva Monroy

Eva Monroy

Grenoble Alpes University

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Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

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Alexey Kavokin

Alexey Kavokin

University of Southampton

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Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

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Colin J. Humphreys

Colin J. Humphreys

Queen Mary University of London

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Bernard Gil

Bernard Gil

University of Montpellier

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Menno J. Kappers

Menno J. Kappers

University of Cambridge

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Sven Höfling

Sven Höfling

University of Würzburg

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Bo Monemar

Bo Monemar

Linköping University

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Tien-Chang Lu

Tien-Chang Lu

National Yang Ming Chiao Tung University

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Hiroshi Amano

Hiroshi Amano

Nagoya University

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Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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