Mathieu Leroux

Mathieu Leroux publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mathieu Leroux sits on this spectrum.

Mathieu Leroux D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mathieu Leroux sits on this spectrum.

Overview

Best Publications

• TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

  M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  639
  Citations

• Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

  Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  495
  Citations

• Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

  N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

  399
  Citations

• Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

  Eric Feltin;B. Beaumont;M. Laügt;P. de Mierry

  374
  Citations

• From visible to white light emission by GaN quantum dots on Si(111) substrate

  B. Damilano;N. Grandjean;F. Semond;J. Massies

  353
  Citations

• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

  N. Grandjean;J. Massies;M. Leroux

  293
  Citations

• Barrier-width dependence of group-III nitrides quantum-well transition energies

  Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  266
  Citations

• From excitonic to photonic polariton condensate in a ZnO-based microcavity.

  Feng Li;Feng Li;Laurent Orosz;Olfa Kamoun;Sophie Bouchoule

  245
  Citations

• Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

  Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  214
  Citations

• Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

  H Lahrèche;P Vennéguès;O Tottereau;M Laügt

  179
  Citations

• Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

  P. Vennéguès;M. Benaissa;B. Beaumont;E. Feltin

  151
  Citations

• Polariton lasing in a hybrid bulk ZnO microcavity

  Thierry Guillet;Meletios Mexis;J. Levrat;G. Rossbach

  149
  Citations

• Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

  M Leroux;B Beaumont;N Grandjean;P Lorenzini

  130
  Citations

• Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

  T. Gühne;Z. Bougrioua;P. Vennéguès;M. Leroux

  129
  Citations

• Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

  N. Grandjean;J. Massies;M. Leroux

  126
  Citations

• Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

  H. P. D. Schenk;M. Leroux;P. de Mierry

  123
  Citations

• Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

  H. Lahrèche;M. Leroux;M. Laügt;M. Vaille

  117
  Citations

• GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

  F. Semond;B. Damilano;S. Vézian;N. Grandjean

  112
  Citations

• Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

  N. Antoine-Vincent;F. Natali;D. Byrne;A. Vasson

  112
  Citations

• Atomic structure of pyramidal defects in Mg-doped GaN

  P. Vennéguès;M. Leroux;S. Dalmasso;M. Benaissa

  106
  Citations