2026 Mathieu Leroux: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	51	9888	9550	280	270	307	9627

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

9888

9550

280

270

307

9627

Overview

Mathieu Leroux is affiliated with the Centre national de la recherche scientifique (CNRS) in France. Their research is situated primarily in the field of engineering, with significant contributions across multiple specialized subfields.

Their work spans several domains, particularly:

Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering
Inorganic Chemistry
Cellular and Molecular Neuroscience

Leroux's research topics focus largely on semiconductor materials and device physics, including:

GaN-based semiconductor devices and materials
Ga2O3 and related materials
ZnO doping and properties
Mental Health Research Topics
Complex Systems and Time Series Analysis
Statistical Methods and Inference
Metal and Thin Film Mechanics

Their recent publications include:

Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy (2021), published in Superlattices and Microstructures
Crystalline magnesium nitride (Mg₃N₂): From epitaxial growth to fundamental physical properties (2020), published in Physical Review Materials
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials (2020), published in Journal of Applied Physics
Multiview Symbolic Regression (2024), published in Proceedings of the Genetic and Evolutionary Computation Conference
Carboxylate BODIPY integrated in MOF-5: easy preparation and solid-state luminescence (2023), published in Journal of Materials Chemistry C

Leroux frequently collaborates with several researchers, including:

Clément Michelin
J. Zúñiga-Pérez
Etienne Russeil
Fabrício Olivetti de França
Konstantin Malanchev

The main venues for their publications reflect the interdisciplinary nature of Leroux's work and include:

Superlattices and Microstructures
Proceedings of the Genetic and Evolutionary Computation Conference
Physical Review Materials
Journal of Applied Physics
Journal of Materials Chemistry C

Best Publications

TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

639
Citations
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

495
Citations
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

399
Citations
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Eric Feltin;B. Beaumont;M. Laügt;P. de Mierry

374
Citations
From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano;N. Grandjean;F. Semond;J. Massies

353
Citations
Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

N. Grandjean;J. Massies;M. Leroux

293
Citations
Barrier-width dependence of group-III nitrides quantum-well transition energies

Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

266
Citations
From excitonic to photonic polariton condensate in a ZnO-based microcavity.

Feng Li;Feng Li;Laurent Orosz;Olfa Kamoun;Sophie Bouchoule

245
Citations
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

214
Citations
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

H Lahrèche;P Vennéguès;O Tottereau;M Laügt

179
Citations
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

P. Vennéguès;M. Benaissa;B. Beaumont;E. Feltin

151
Citations
Polariton lasing in a hybrid bulk ZnO microcavity

Thierry Guillet;Meletios Mexis;J. Levrat;G. Rossbach

149
Citations
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M Leroux;B Beaumont;N Grandjean;P Lorenzini

130
Citations
Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

T. Gühne;Z. Bougrioua;P. Vennéguès;M. Leroux

129
Citations
Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

N. Grandjean;J. Massies;M. Leroux

126
Citations
Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

H. P. D. Schenk;M. Leroux;P. de Mierry

123
Citations
Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

H. Lahrèche;M. Leroux;M. Laügt;M. Vaille

117
Citations
GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

F. Semond;B. Damilano;S. Vézian;N. Grandjean

112
Citations
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

N. Antoine-Vincent;F. Natali;D. Byrne;A. Vasson

112
Citations
Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès;M. Leroux;S. Dalmasso;M. Benaissa

106
Citations