What is he best known for?
The fields of study he is best known for:
- Quantum mechanics
- Electron
- Semiconductor
The scientist’s investigation covers issues in Optoelectronics, Epitaxy, Molecular beam epitaxy, Photoluminescence and Wide-bandgap semiconductor.
A large part of his Optoelectronics studies is devoted to Silicon.
Mathieu Leroux interconnects Crystallography, Electron diffraction, Transmission electron microscopy and Full width at half maximum in the investigation of issues within Epitaxy.
His studies in Molecular beam epitaxy integrate themes in fields like Gallium nitride, Blueshift, Quantum well, Analytical chemistry and Sapphire.
His Photoluminescence research is multidisciplinary, incorporating perspectives in Quantum dot, Exciton and Wurtzite crystal structure.
His studies deal with areas such as Layer and Band gap as well as Wide-bandgap semiconductor.
His most cited work include:
- TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN (382 citations)
- Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. (332 citations)
- From visible to white light emission by GaN quantum dots on Si(111) substrate (245 citations)
What are the main themes of his work throughout his whole career to date?
His main research concerns Optoelectronics, Photoluminescence, Molecular beam epitaxy, Condensed matter physics and Epitaxy.
Mathieu Leroux combines subjects such as Sapphire and Nitride with his study of Optoelectronics.
His research in Photoluminescence intersects with topics in Quantum well, Wide-bandgap semiconductor, Luminescence and Heterojunction.
His Molecular beam epitaxy research is multidisciplinary, relying on both Gallium nitride, Stark effect, Electron diffraction, Reflection high-energy electron diffraction and Laser linewidth.
The study of Condensed matter physics is intertwined with the study of Wurtzite crystal structure in a number of ways.
His Epitaxy study combines topics in areas such as Crystallography, Thin film, Transmission electron microscopy and Chemical vapor deposition.
He most often published in these fields:
- Optoelectronics (56.00%)
- Photoluminescence (46.67%)
- Molecular beam epitaxy (35.00%)
What were the highlights of his more recent work (between 2012-2021)?
- Optoelectronics (56.00%)
- Molecular beam epitaxy (35.00%)
- Photoluminescence (46.67%)
In recent papers he was focusing on the following fields of study:
His scientific interests lie mostly in Optoelectronics, Molecular beam epitaxy, Photoluminescence, Quantum dot and Light-emitting diode.
His Optoelectronics study combines topics from a wide range of disciplines, such as Sapphire, Laser, Epitaxy and Nitride.
His Epitaxy research includes elements of Crystallography, Thin film and Silicon.
His work deals with themes such as Nanostructure, Doping, Quantum-confined Stark effect and Analytical chemistry, which intersect with Molecular beam epitaxy.
His study on Photoluminescence also encompasses disciplines like
- Luminescence which connect with Passivation,
- Quantum well which intersects with area such as Nanowire.
His Light-emitting diode research includes themes of Gallium nitride, Diode, Heterojunction, Electroluminescence and Physical vapor deposition.
Between 2012 and 2021, his most popular works were:
- From excitonic to photonic polariton condensate in a ZnO-based microcavity. (116 citations)
- Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy (67 citations)
- Fabrication and characterization of a room-temperature ZnO polariton laser (37 citations)
In his most recent research, the most cited papers focused on:
- Quantum mechanics
- Electron
- Semiconductor
Mathieu Leroux mainly focuses on Optoelectronics, Molecular beam epitaxy, Epitaxy, Quantum dot and Wide-bandgap semiconductor.
The various areas that he examines in his Optoelectronics study include Sapphire and Electroluminescence.
His Epitaxy research integrates issues from Transmission electron microscopy, Silicon and Dislocation.
The concepts of his Quantum dot study are interwoven with issues in Absorption, Heterojunction, Light-emitting diode, Ultraviolet and Photoluminescence.
His Wide-bandgap semiconductor study is associated with Condensed matter physics.
His work is dedicated to discovering how Condensed matter physics, Luminescence are connected with Wurtzite crystal structure and other disciplines.
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