Mathieu Leroux publications per year

The chart shows the history of publications by Mathieu Leroux between 1978 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Mathieu Leroux published across 48 years, from 1978 to 2025, averaging 6.5 papers a year. Output peaked at 22 publications in 1997. 3 of the 313 publications appeared in the last two years.

No. of publications

5 10 15 20

1978 2025

313 publications in total across all disciplines

View publications per year as a table

Mathieu Leroux: publications per year, 1978 to 2025
Year	Publications
1978	1
1979	1
1980	1
1981	0
1982	1
1983	1
1984	1
1985	1
1986	3
1987	1
1988	1
1989	5
1990	2
1991	5
1992	2
1993	4
1994	6
1995	5
1996	9
1997	22
1998	14
1999	22
2000	11
2001	11
2002	11
2003	5
2004	5
2005	5
2006	8
2007	9
2008	10
2009	12
2010	12
2011	10
2012	9
2013	13
2014	16
2015	11
2016	13
2017	9
2018	10
2019	4
2020	5
2021	2
2022	0
2023	1
2024	2
2025	1
Total	313

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Mathieu Leroux publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mathieu Leroux sits on this spectrum.

No. of scientists

200 400 600 800

50–69 publications 1,163+

This scientist: 307 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table

Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications	Scientists	This scientist
50–69	28
70–89	152
90–109	356
110–129	487
130–149	723
150–169	835
170–189	850
190–209	891
210–229	862
230–249	766
250–269	726
270–289	665
290–309	593	307
310–329	537
330–349	477
350–369	440
370–389	356
390–409	321
410–429	256
430–449	246
450–469	216
470–489	212
490–509	174
510–529	194
530–549	162
550–569	131
570–589	111
590–609	103
610–629	99
630–649	77
650–669	92
670–689	56
690–709	53
710–729	53
730–749	38
750–769	52
770–789	43
790–809	38
810–829	34
830–849	25
850–869	18
870–889	20
890–909	24
910–929	27
930–949	20
950–969	17
970–989	10
990–1,009	16
1,010–1,029	13
1,030–1,049	12
1,050–1,069	9
1,070–1,089	8
1,090–1,109	7
1,110–1,129	9
1,130–1,149	2
1,150–1,162	5
1,163+	100

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Mathieu Leroux D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mathieu Leroux sits on this spectrum.

No. of scientists

200 400 600

40–41 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table

Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index	Scientists	This scientist
40–41	211
42–43	450
44–45	612
46–47	612
48–49	598
50–51	657	51
52–53	667
54–55	621
56–57	597
58–59	610
60–61	587
62–63	606
64–65	533
66–67	490
68–69	469
70–71	378
72–73	421
74–75	359
76–77	323
78–79	299
80–81	230
82–83	210
84–85	195
86–87	203
88–89	175
90–91	175
92–93	142
94–95	121
96–97	117
98–99	107
100–101	88
102–103	85
104–105	68
106–107	62
108–109	57
110–111	45
112–113	49
114–115	50
116–117	34
118–119	38
120–121	37
122–123	29
124–125	28
126–127	24
128–129	33
130–131	28
132–133	21
134–135	20
136–137	23
138–139	17
140–141	12
142–143	17
144–145	21
146–147	13
148–149	11
150–151	14
152–153	13
154–155	9
156–157	10
158–159	7
160–161	4
162–163	4
164	3
165+	98

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Overview

Mathieu Leroux is affiliated with the Centre national de la recherche scientifique (CNRS) in France. Their research is situated primarily in the field of engineering, with significant contributions across multiple specialized subfields.

Their work spans several domains, particularly:

Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering
Inorganic Chemistry
Cellular and Molecular Neuroscience

Leroux's research topics focus largely on semiconductor materials and device physics, including:

GaN-based semiconductor devices and materials
Ga2O3 and related materials
ZnO doping and properties
Mental Health Research Topics
Complex Systems and Time Series Analysis
Statistical Methods and Inference
Metal and Thin Film Mechanics

Their recent publications include:

Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy (2021), published in Superlattices and Microstructures
Crystalline magnesium nitride (Mg₃N₂): From epitaxial growth to fundamental physical properties (2020), published in Physical Review Materials
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials (2020), published in Journal of Applied Physics
Multiview Symbolic Regression (2024), published in Proceedings of the Genetic and Evolutionary Computation Conference
Carboxylate BODIPY integrated in MOF-5: easy preparation and solid-state luminescence (2023), published in Journal of Materials Chemistry C

Leroux frequently collaborates with several researchers, including:

Clément Michelin
J. Zúñiga-Pérez
Etienne Russeil
Fabrício Olivetti de França
Konstantin Malanchev

The main venues for their publications reflect the interdisciplinary nature of Leroux's work and include:

Superlattices and Microstructures
Proceedings of the Genetic and Evolutionary Computation Conference
Physical Review Materials
Journal of Applied Physics
Journal of Materials Chemistry C

Best Publications

TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

639
Citations
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

495
Citations
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

399
Citations
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Eric Feltin;B. Beaumont;M. Laügt;P. de Mierry

374
Citations
From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano;N. Grandjean;F. Semond;J. Massies

353
Citations
Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

N. Grandjean;J. Massies;M. Leroux

293
Citations
Barrier-width dependence of group-III nitrides quantum-well transition energies

Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

266
Citations
From excitonic to photonic polariton condensate in a ZnO-based microcavity.

Feng Li;Feng Li;Laurent Orosz;Olfa Kamoun;Sophie Bouchoule

245
Citations
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

214
Citations
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

H Lahrèche;P Vennéguès;O Tottereau;M Laügt

179
Citations
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

P. Vennéguès;M. Benaissa;B. Beaumont;E. Feltin

151
Citations
Polariton lasing in a hybrid bulk ZnO microcavity

Thierry Guillet;Meletios Mexis;J. Levrat;G. Rossbach

149
Citations
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M Leroux;B Beaumont;N Grandjean;P Lorenzini

130
Citations
Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

T. Gühne;Z. Bougrioua;P. Vennéguès;M. Leroux

129
Citations
Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

N. Grandjean;J. Massies;M. Leroux

126
Citations
Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

H. P. D. Schenk;M. Leroux;P. de Mierry

123
Citations
Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

H. Lahrèche;M. Leroux;M. Laügt;M. Vaille

117
Citations
GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

F. Semond;B. Damilano;S. Vézian;N. Grandjean

112
Citations
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

N. Antoine-Vincent;F. Natali;D. Byrne;A. Vasson

112
Citations
Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès;M. Leroux;S. Dalmasso;M. Benaissa

106
Citations