Philippe Boucaud

Overview

Best Publications

• Dynamical twisted mass fermions with light quarks: simulation and analysis details

  Philippe Boucaud;P. Dimopoulos;Federico Farchioni;Roberto Frezzotti

  406
  Citations

• Light hadrons from lattice QCD with light (u,d), strange and charm dynamical quarks

  Remi Baron;Philippe Boucaud;Jaume Carbonell;Albert Deuzeman

  311
  Citations

• Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

  Moustafa El Kurdi;Guy Fishman;Sébastien Sauvage;Philippe Boucaud

  299
  Citations

• Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

  A. Elbaz;D. Buca;N. Von den Driesch;K. Pantzas

  219
  Citations

• THIRD-HARMONIC GENERATION IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS

  S. Sauvage;P. Boucaud;F. Glotin;R. Prazeres

  199
  Citations

• Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

  Anas Elbaz;Anas Elbaz;Dan Buca;Nils von den Driesch;Nils von den Driesch;Konstantinos Pantzas

  196
  Citations

• Intraband absorption in n-doped InAs/GaAs quantum dots

  S. Sauvage;P. Boucaud;F. H. Julien;J.-M. Gérard

  186
  Citations

• Vertically self-organized Ge/Si(001) quantum dots in multilayer structures

  Vinh Le Thanh;V. Yam;P. Boucaud;F. Fortuna

  184
  Citations

• Control of direct band gap emission of bulk germanium by mechanical tensile strain

  M. El Kurdi;H. Bertin;E. Martincic;M. de Kersauson

  174
  Citations

• Long Polaron Lifetime in InAs/GaAs Self-Assembled Quantum Dots

  S. Sauvage;P. Boucaud;R. P. S. M. Lobo;F. Bras

  173
  Citations

• Engineering strained silicon on insulator wafers with the Smart CutTM technology

  B. Ghyselen;J.-M. Hartmann;T. Ernst;C. Aulnette

  162
  Citations

• Enhanced photoluminescence of heavily n-doped germanium

  M. El Kurdi;T. Kociniewski;T.-P. Ngo;J. Boulmer

  161
  Citations

• Lattice calculation of 1/p2 corrections to αs and of Λ(QCD) in the MOM-tilde scheme

  Philippe Boucaud;Giuseppe Burgio;Francesco Di Renzo;Francesco Di Renzo;Jean Pierre Leroy

  154
  Citations

• Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys

  P. Boucaud;C. Francis;F. H. Julien;J.‐M. Lourtioz

  141
  Citations

• Computing K and D meson masses with N-f=2+1+1 twisted mass lattice QCD

  Remi Baron;Philippe Boucaud;Philippe Boucaud;Jaume Carbonell;Vincent Drach

  133
  Citations

• Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots

  S. Sauvage;P. Boucaud;F. H. Julien;J.-M. Gérard

  126
  Citations

• Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

  Giovanni Capellini;C Reich;S Guha;Y Yamamoto

  121
  Citations

• Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

  Giovanni Capellini;G Kozlowski;Y Yamamoto;M Lisker

  120
  Citations

• Band-edge alignment of SiGe ∕ Si quantum wells and SiGe ∕ Si self-assembled islands

  M. El Kurdi;S. Sauvage;G. Fishman;P. Boucaud

  120
  Citations

• Long-wavelength (≈15.5 μm) unipolar semiconductor laser in GaAs quantum wells

  Unknown

  119
  Citations

• Optical gain in single tensile-strained germanium photonic wire

  M de Kersauson;M El Kurdi;S David;X Checoury

  112
  Citations

• In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dots

  S. Sauvage;P. Boucaud;J.-M. Gérard;V. Thierry-Mieg

  112
  Citations

• Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots

  S. Sauvage;P. Boucaud;T. Brunhes;V. Immer

  111
  Citations