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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
9587
World Ranking
2943
National Ranking
164

Overview

Zoran Ikonic is affiliated with the University of Leeds in the United Kingdom. Their research principally spans the fields of Engineering and Physics and Astronomy, with a focus on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics as key subfields.

The scientist's work primarily addresses topics related to Photonic and Optical Devices, Advanced Fiber Optic Sensors, Semiconductor Lasers and Optical Devices, Neural Networks and Reservoir Computing, Nanowire Synthesis and Applications, Mechanical and Optical Resonators, and Spectroscopy and Laser Applications.

Notable recent publications by Zoran Ikonic include:

  • Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering, 2022, Advanced Optical Materials
  • Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, 2022, ACS Photonics
  • Enhanced GeSn Microdisk Lasers Directly Released on Si, 2021, Advanced Optical Materials
  • Vertical GeSn nanowire MOSFETs for CMOS beyond silicon, 2023, Communications Engineering
  • Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy, 2020, Photonics Research

The most frequent publication venues for their work include Advanced Optical Materials, Journal of Applied Physics, Nature Communications, Photonics Research, and ACS Applied Energy Materials.

Zoran Ikonic collaborates regularly with several researchers, among whom the most frequent coauthors are Dan Buca, Donguk Nam, Youngmin Kim, Hyo-Jun Joo, and Melvina Chen.

Best Publications

  • Lasing in direct-bandgap GeSn alloy grown on Si

    S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  • Band structure calculations of Si Ge Sn alloys: achieving direct band gap materials

    Pairot Moontragoon;Zoran Ikonić;Paul Harrison

  • Optically Pumped GeSn Microdisk Lasers on Si

    Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

  • The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

    P. Moontragoon;R. A. Soref;Z. Ikonic

  • Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

    A. Elbaz;D. Buca;N. Von den Driesch;K. Pantzas

  • Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

    Anas Elbaz;Anas Elbaz;Dan Buca;Nils von den Driesch;Nils von den Driesch;Konstantinos Pantzas

  • Terahertz imaging through self-mixing in a quantum cascade laser

    Paul Dean;Yah Leng Lim;Alex Valavanis;Russell Kliese

  • Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

    S. Wirths;A. T. Tiedemann;Zoran Ikonic;P. Harrison

  • Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

    Stephen Anthony Lynch;R. Bates;D. J. Paul;D. J. Norris

  • Direct Bandgap Group IV Epitaxy on Si for Laser Applications

    N. von den Driesch;D. Stange;S. Wirths;G. Mussler

  • Self-consistent scattering theory of transport and output characteristics of quantum cascade lasers

    D. Indjin;P. Harrison;R. W. Kelsall;Z. Ikonić

  • Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors.

    Z Ikonic;GP Srivastava;JC Inkson

  • Swept-frequency feedback interferometry using terahertz frequency QCLs: a method for imaging and materials analysis

    Aleksandar D Rakić;Thomas Taimre;Karl Bertling;Yah Leng Lim

  • GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

    Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  • Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

    Daniela Stange;Nils von den Driesch;Denis Rainko;Søren Roesgaard

  • Simulation and design of GaN/AlGaN far-infrared (λ∼34 μm) quantum-cascade laser

    V. D. Jovanović;D. Indjin;Z. Ikonić;P. Harrison

  • Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

    D. Stange;S. Wirths;N. von den Driesch;G. Mussler

  • Demonstration of a self-mixing displacement sensor based on terahertz quantum cascade lasers

    Yah Leng Lim;Paul Dean;Milan Nikolić;Russell Kliese

  • Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

    R. Bates;Stephen Anthony Lynch;D. J. Paul;Z. Ikonic

  • Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm

    Ryan E. Warburton;Giuseppe Intermite;Maksym Myronov;Phil Allred

Frequent Co-Authors

Edmund H. Linfield
Edmund H. Linfield University of Leeds
S. Mantl
S. Mantl Forschungszentrum Jülich
Hans Sigg
Hans Sigg Paul Scherrer Institute
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Suraj P. Khanna
Suraj P. Khanna National Physical Laboratory
Graham T. Reed
Graham T. Reed University of Southampton
David J. Thomson
David J. Thomson University of Southampton
A. G. Cullis
A. G. Cullis University of Sheffield
H. von Känel
H. von Känel ETH Zurich

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