World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
5421
World Ranking
5346
National Ranking
1845

Shui-Qing Yu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Shui-Qing Yu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 294 publications — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Shui-Qing Yu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Shui-Qing Yu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Shui-Qing Yu is affiliated with the University of Arkansas at Fayetteville in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a strong focus on Electrical and Electronic Engineering as well as Atomic and Molecular Physics and Optics.

Their body of work includes numerous publications covering a range of specialized topics. Key research areas include Photonic and Optical Devices, Semiconductor Lasers and Optical Devices, Advanced Photonic Communication Systems, and Semiconductor Quantum Structures and Devices. Additionally, their studies delve into Nanowire Synthesis and Applications, Photonic Crystals and Applications, and Semiconductor Materials and Devices.

Recent scholarly articles authored or co-authored by Shui-Qing Yu highlight advancements in semiconductor and photonic technologies. Selected papers include:

  • Electrically injected GeSn lasers on Si operating up to 100 K, 2020, Optica
  • Electrically injected GeSn lasers with peak wavelength up to 2.7 μm, 2021, Photonics Research
  • Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors, 2021, IEEE Journal of Selected Topics in Quantum Electronics
  • Advances in GeSn alloys for MIR applications, 2024, Photonics and Nanostructures - Fundamentals and Applications
  • Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate, 2020, Applied Physics Letters

Shui-Qing Yu collaborates frequently with several researchers, including:

  • Gregory J. Salamo
  • Hryhorii Stanchu
  • Wei Du
  • Yuriy I. Mazur
  • Solomon Ojo

Their work appears frequently in notable scientific publication venues such as:

  • arXiv (Cornell University)
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • IEEE Journal of Selected Topics in Quantum Electronics
  • Applied Physics Letters
  • SSRN Electronic Journal

Best Publications

  • Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

    O. Moutanabbir;S. Assali;X. Gong;E. O'Reilly

  • An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

    Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  • Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

    Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  • Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

    Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  • Electrically injected GeSn lasers on Si operating up to 100 K

    Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  • Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

    Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  • Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

    Jay Mathews;Radek Roucka;Junqi Xie;Shui Qing Yu

  • Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

    Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  • Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

    Wei Dou;Mourad Benamara;Aboozar Mosleh;Joe Margetis

  • Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Thach Pham;Wei Du;Huong Tran;Joe Margetis

  • Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

    Yiyin Zhou;Yiyin Zhou;Wei Dou;Wei Du;Solomon Ojo

  • Group IV Photonics: Driving Integrated Optoelectronics

    Richard Soref;Dan Buca;Shui-Qing Yu

  • Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor

    Aboozar Mosleh;Murtadha A. Alher;Larry Cousar;Husam Abusafe

  • Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

    Wei Du;Yiyin Zhou;Seyed A. Ghetmiri;Aboozar Mosleh

  • Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

    Benjamin R. Conley;Aboozar Mosleh;Seyed Amir Ghetmiri;Wei Du

  • Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

    Wei Du;Seyed A. Ghetmiri;Benjamin R. Conley;Aboozar Mosleh

  • Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

    Wei Dou;Yiyin Zhou;Joe Margetis;Seyed Amir Ghetmiri

  • Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

    Joe Margetis;Seyed Amir Ghetmiri;Wei Du;Benjamin R Conley

  • Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    Zhaoquan Zeng;Timothy A. Morgan;Dongsheng Fan;Chen Li

  • Material Characterization of Ge 1- x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

    Aboozar Mosleh;Seyed Amir Ghetmiri;Benjamin R. Conley;Michael Hawkridge

  • Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

    Benjamin R. Conley;Joe Margetis;Wei Du;Huong Tran

  • Si-based GeSn photodetectors towards mid-infrared imaging applications

    Huong Tran;Thach Pham;Joe Margetis;Yiyin Zhou

Frequent Co-Authors

Wei Du
Wei Du University of Arkansas at Fayetteville
Richard A. Soref
Richard A. Soref University of Massachusetts Boston
Greg Sun
Greg Sun University of Massachusetts Boston
John Tolle
John Tolle Arizona State University
Yong-Hang Zhang
Yong-Hang Zhang Arizona State University
Gregory J. Salamo
Gregory J. Salamo University of Arkansas at Fayetteville
Jifeng Liu
Jifeng Liu Dartmouth College
Robert Kaplar
Robert Kaplar Sandia National Laboratories
Zhiming Wang
Zhiming Wang University of Electronic Science and Technology of China
Jose Menendez
Jose Menendez Arizona State University

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