Jose Menendez

Research.com Recognitions

• 2014 - Fellow of American Physical Society (APS) Citation For significant contributions to the use of Raman spectroscopy in condensed matter physics and the understanding of lattice vibrations in semiconductor materials and superlattices

Overview

Best Publications

• Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects

  José Menéndez;Manuel Cardona

  950
  Citations

• Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices.

  A. K. Sood;J. Menéndez;M. Cardona;K. Ploog

  610
  Citations

• Interface vibrational modes in GaAs-AlAs superlattices.

  A. K. Sood;J. Menéndez;M. Cardona;K. Ploog

  497
  Citations

• Ge–Sn semiconductors for band-gap and lattice engineering

  M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya

  350
  Citations

• TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

  John Kouvetakis;Jose Menendez;Andrew Chizmeshya

  331
  Citations

• Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

  Vijay R. D'Costa;Candi S. Cook;Anthony Birdwell;Chris L. Littler

  324
  Citations

• Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

  John Kouvetakis;Matthew Bauer;Jose Menendez;Chang Wu Hu

  249
  Citations

• Hybrid Group IV/III-V Semiconductor Structures

  John Kouvetakis;Jose Menendez

  244
  Citations

• Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

  J. Mathews;R. T. Beeler;J. Tolle;C. Xu

  232
  Citations

• Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs.

  José Menéndez;Manuel Cardona

  204
  Citations

• Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

  Jay Mathews;Radek Roucka;Junqi Xie;Shui Qing Yu

  174
  Citations

• Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

  Jose Menendez;John Kouvetakis

  171
  Citations

• Empirical bond polarizability model for fullerenes

  S. Guha;Jose Menendez;J. B. Page;G. B. Adams

  165
  Citations

• Phonons in GaAs-AlxGa1−xAs superlattices

  José Menéndez

  164
  Citations

• First-principles quantum molecular-dynamics study of the vibrations of icosahedral C60.

  G. B. Adams;J. B. Page;O. F. Sankey;K. Sinha

  149
  Citations

• Raman scattering in Ge1−ySny alloys

  V. R. D'Costa;J. Tolle;R. Roucka;C. D. Poweleit

  148
  Citations

• Raman Studies of Semiconducting Oxide Nanobelts

  K. Mcguire;Z. W. Pan;Z. L. Wang;D. Milkie

  148
  Citations

• Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

  V. R. D'Costa;Y. Y. Fang;J. Tolle;John Kouvetakis

  146
  Citations

• Advances in SiGeSn technology

  Richard A. Soref;John Kouvetakis;John Tolle;Jose Menendez

  139
  Citations

• Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

  L. Jiang;J. D. Gallagher;Charutha Lasitha Senaratne;Toshihiro Aoki

  138
  Citations

• Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

  G. Grzybowski;R. T. Beeler;L. Jiang;David Smith

  136
  Citations