World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
65
Citations
13791
World Ranking
5683
National Ranking
1469

Jose Menendez publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jose Menendez sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 398 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jose Menendez D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jose Menendez sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2014 - Fellow of American Physical Society (APS) Citation For significant contributions to the use of Raman spectroscopy in condensed matter physics and the understanding of lattice vibrations in semiconductor materials and superlattices

Overview

Jose Menendez is affiliated with Arizona State University in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with significant contributions to several subfields including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Modeling and Simulation, and Infectious Diseases.

Their scholarly work addresses a range of topics within photonics and semiconductor physics, focusing on areas such as Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Thin-Film Transistor Technologies, Semiconductor materials and devices, Semiconductor materials and interfaces, Silicon Nanostructures and Photoluminescence, and Mechanical and Optical Resonators.

Jose Menendez has a publication record that includes the following papers:

  • Temperature-dependent photoluminescence in Ge: Experiment and theory, 2020, published in Physical Review B
  • Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1-ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8, 2021, published in ACS Applied Electronic Materials
  • Elementary time-delay dynamics of COVID-19 disease, 2020, published in bioRxiv (Cold Spring Harbor Laboratory)
  • Excitonic effects at the temperature-dependent direct bandgap of Ge, 2022, published in Journal of Applied Physics
  • Unified theory of optical absorption and luminescence including both direct and phonon-assisted processes, 2024, published in Physical Review B

The research output is frequently featured in venues including:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Applied Physics
  • arXiv (Cornell University)
  • Physical Review B
  • bioRxiv (Cold Spring Harbor Laboratory)

Frequent co-authorship has been established with researchers such as John Kouvetakis, Matthew A. Mircovich, Dhruve A. Ringwala, Manuel A. Roldán, and Chi Xu.

In recognition of scholarly contributions, Jose Menendez was named Fellow of the American Physical Society (APS) in 2014. The citation noted their work related to Raman spectroscopy applications in condensed matter physics and investigations of lattice vibrations in semiconductor materials and superlattices.

Best Publications

  • Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects

    José Menéndez;Manuel Cardona

  • Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices.

    A. K. Sood;J. Menéndez;M. Cardona;K. Ploog

  • Interface vibrational modes in GaAs-AlAs superlattices.

    A. K. Sood;J. Menéndez;M. Cardona;K. Ploog

  • Ge–Sn semiconductors for band-gap and lattice engineering

    M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya

  • TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

    John Kouvetakis;Jose Menendez;Andrew Chizmeshya

  • Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

    Vijay R. D'Costa;Candi S. Cook;Anthony Birdwell;Chris L. Littler

  • Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

    John Kouvetakis;Matthew Bauer;Jose Menendez;Chang Wu Hu

  • Hybrid Group IV/III-V Semiconductor Structures

    John Kouvetakis;Jose Menendez

  • Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

    J. Mathews;R. T. Beeler;J. Tolle;C. Xu

  • Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs.

    José Menéndez;Manuel Cardona

  • Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

    Jay Mathews;Radek Roucka;Junqi Xie;Shui Qing Yu

  • Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

    Jose Menendez;John Kouvetakis

  • Empirical bond polarizability model for fullerenes

    S. Guha;Jose Menendez;J. B. Page;G. B. Adams

  • Phonons in GaAs-AlxGa1−xAs superlattices

    José Menéndez

  • First-principles quantum molecular-dynamics study of the vibrations of icosahedral C60.

    G. B. Adams;J. B. Page;O. F. Sankey;K. Sinha

  • Raman scattering in Ge1−ySny alloys

    V. R. D'Costa;J. Tolle;R. Roucka;C. D. Poweleit

  • Raman Studies of Semiconducting Oxide Nanobelts

    K. Mcguire;Z. W. Pan;Z. L. Wang;D. Milkie

  • Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

    V. R. D'Costa;Y. Y. Fang;J. Tolle;John Kouvetakis

  • Advances in SiGeSn technology

    Richard A. Soref;John Kouvetakis;John Tolle;Jose Menendez

  • Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

    L. Jiang;J. D. Gallagher;Charutha Lasitha Senaratne;Toshihiro Aoki

  • Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

    G. Grzybowski;R. T. Beeler;L. Jiang;David Smith

Frequent Co-Authors

John Kouvetakis
John Kouvetakis Arizona State University
John Tolle
John Tolle Arizona State University
Manuel Cardona
Manuel Cardona Max Planck Society
Otto F. Sankey
Otto F. Sankey Arizona State University
Wolfgang Windl
Wolfgang Windl The Ohio State University
Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Loren Pfeiffer
Loren Pfeiffer Princeton University
Ken W. West
Ken W. West Princeton University
A. K. Sood
A. K. Sood Indian Institute of Science
Terry Alford
Terry Alford Arizona State University

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