2014 - Fellow of American Physical Society (APS) Citation For significant contributions to the use of Raman spectroscopy in condensed matter physics and the understanding of lattice vibrations in semiconductor materials and superlattices
His primary scientific interests are in Band gap, Optoelectronics, Raman spectroscopy, Semiconductor and Phonon. His Band gap study integrates concerns from other disciplines, such as Crystallography, Photoluminescence, Analytical chemistry and Electronic band structure. His work on Silicon, Heterojunction and Photodiode as part of general Optoelectronics research is frequently linked to Surface plasmon resonance, bridging the gap between disciplines.
As a part of the same scientific study, Jose Menendez usually deals with the Raman spectroscopy, concentrating on Molecular physics and frequently concerns with Icosahedral symmetry. His work in Semiconductor addresses issues such as Lattice constant, which are connected to fields such as Electronic structure, Lattice, Crystal structure, Epitaxy and Chemical vapor deposition. Phonon is a subfield of Condensed matter physics that Jose Menendez investigates.
Jose Menendez focuses on Optoelectronics, Raman spectroscopy, Semiconductor, Condensed matter physics and Band gap. The Raman scattering and Coherent anti-Stokes Raman spectroscopy research Jose Menendez does as part of his general Raman spectroscopy study is frequently linked to other disciplines of science, such as Resonance, therefore creating a link between diverse domains of science. The study incorporates disciplines such as Nanotechnology, Group, Doping and Lattice constant in addition to Semiconductor.
His Condensed matter physics research is multidisciplinary, relying on both Quantum well and Atomic physics. He has researched Band gap in several fields, including Photoluminescence and Electronic band structure. Jose Menendez combines subjects such as Crystallography and Epitaxy with his study of Chemical vapor deposition.
His primary areas of study are Optoelectronics, Doping, Photoluminescence, Semiconductor and Condensed matter physics. His research in Optoelectronics focuses on subjects like Electroluminescence, which are connected to Heterojunction. His Doping study incorporates themes from Chemical vapor deposition, Nanotechnology, Germanium and Analytical chemistry.
His study in Chemical vapor deposition is interdisciplinary in nature, drawing from both Crystallography, Raman spectroscopy and Lattice constant. The various areas that he examines in his Photoluminescence study include Direct and indirect band gaps, Band gap and Photocurrent. His Semiconductor research integrates issues from Molecule and Critical point.
Jose Menendez spends much of his time researching Analytical chemistry, Photoluminescence, Chemical vapor deposition, Optoelectronics and Doping. His work carried out in the field of Analytical chemistry brings together such families of science as Monocrystalline silicon, Nanotechnology, Microstructure and Epitaxy. His research integrates issues of Crystallography and Band gap in his study of Photoluminescence.
Jose Menendez interconnects Thin film and Semiconductor in the investigation of issues within Band gap. His work in Optoelectronics tackles topics such as Electroluminescence which are related to areas like Light-emitting diode. His Raman spectroscopy study combines topics from a wide range of disciplines, such as Absorption and Lattice constant.
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Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects
José Menéndez;Manuel Cardona.
Physical Review B (1984)
Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices.
A. K. Sood;J. Menéndez;M. Cardona;K. Ploog.
Physical Review Letters (1985)
Interface vibrational modes in GaAs-AlAs superlattices.
A. K. Sood;J. Menéndez;M. Cardona;K. Ploog.
Physical Review Letters (1985)
Ge–Sn semiconductors for band-gap and lattice engineering
M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya.
Applied Physics Letters (2002)
TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
John Kouvetakis;Jose Menendez;Andrew Chizmeshya.
Annual Review of Materials Research (2006)
Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study
Vijay R. D'Costa;Candi S. Cook;Anthony Birdwell;Chris L. Littler.
Physical Review B (2006)
Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
John Kouvetakis;Matthew Bauer;Jose Menendez;Chang Wu Hu.
(2004)
Hybrid Group IV/III-V Semiconductor Structures
John Kouvetakis;Jose Menendez.
(2009)
Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
J. Mathews;R. T. Beeler;J. Tolle;C. Xu.
Applied Physics Letters (2010)
Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs.
José Menéndez;Manuel Cardona.
Physical Review B (1985)
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