D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 62 Citations 12,038 381 World Ranking 3953 National Ranking 1158

Research.com Recognitions

Awards & Achievements

2014 - Fellow of American Physical Society (APS) Citation For significant contributions to the use of Raman spectroscopy in condensed matter physics and the understanding of lattice vibrations in semiconductor materials and superlattices

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Photon

His primary scientific interests are in Band gap, Optoelectronics, Raman spectroscopy, Semiconductor and Phonon. His Band gap study integrates concerns from other disciplines, such as Crystallography, Photoluminescence, Analytical chemistry and Electronic band structure. His work on Silicon, Heterojunction and Photodiode as part of general Optoelectronics research is frequently linked to Surface plasmon resonance, bridging the gap between disciplines.

As a part of the same scientific study, Jose Menendez usually deals with the Raman spectroscopy, concentrating on Molecular physics and frequently concerns with Icosahedral symmetry. His work in Semiconductor addresses issues such as Lattice constant, which are connected to fields such as Electronic structure, Lattice, Crystal structure, Epitaxy and Chemical vapor deposition. Phonon is a subfield of Condensed matter physics that Jose Menendez investigates.

His most cited work include:

  • Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects (506 citations)
  • Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices. (290 citations)
  • Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study (261 citations)

What are the main themes of his work throughout his whole career to date?

Jose Menendez focuses on Optoelectronics, Raman spectroscopy, Semiconductor, Condensed matter physics and Band gap. The Raman scattering and Coherent anti-Stokes Raman spectroscopy research Jose Menendez does as part of his general Raman spectroscopy study is frequently linked to other disciplines of science, such as Resonance, therefore creating a link between diverse domains of science. The study incorporates disciplines such as Nanotechnology, Group, Doping and Lattice constant in addition to Semiconductor.

His Condensed matter physics research is multidisciplinary, relying on both Quantum well and Atomic physics. He has researched Band gap in several fields, including Photoluminescence and Electronic band structure. Jose Menendez combines subjects such as Crystallography and Epitaxy with his study of Chemical vapor deposition.

He most often published in these fields:

  • Optoelectronics (33.66%)
  • Raman spectroscopy (26.21%)
  • Semiconductor (22.65%)

What were the highlights of his more recent work (between 2012-2020)?

  • Optoelectronics (33.66%)
  • Doping (10.68%)
  • Photoluminescence (11.00%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Doping, Photoluminescence, Semiconductor and Condensed matter physics. His research in Optoelectronics focuses on subjects like Electroluminescence, which are connected to Heterojunction. His Doping study incorporates themes from Chemical vapor deposition, Nanotechnology, Germanium and Analytical chemistry.

His study in Chemical vapor deposition is interdisciplinary in nature, drawing from both Crystallography, Raman spectroscopy and Lattice constant. The various areas that he examines in his Photoluminescence study include Direct and indirect band gaps, Band gap and Photocurrent. His Semiconductor research integrates issues from Molecule and Critical point.

Between 2012 and 2020, his most popular works were:

  • Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials (77 citations)
  • Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys (56 citations)
  • Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition (39 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Optics

Jose Menendez spends much of his time researching Analytical chemistry, Photoluminescence, Chemical vapor deposition, Optoelectronics and Doping. His work carried out in the field of Analytical chemistry brings together such families of science as Monocrystalline silicon, Nanotechnology, Microstructure and Epitaxy. His research integrates issues of Crystallography and Band gap in his study of Photoluminescence.

Jose Menendez interconnects Thin film and Semiconductor in the investigation of issues within Band gap. His work in Optoelectronics tackles topics such as Electroluminescence which are related to areas like Light-emitting diode. His Raman spectroscopy study combines topics from a wide range of disciplines, such as Absorption and Lattice constant.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects

José Menéndez;Manuel Cardona.
Physical Review B (1984)

863 Citations

Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices.

A. K. Sood;J. Menéndez;M. Cardona;K. Ploog.
Physical Review Letters (1985)

599 Citations

Interface vibrational modes in GaAs-AlAs superlattices.

A. K. Sood;J. Menéndez;M. Cardona;K. Ploog.
Physical Review Letters (1985)

488 Citations

Ge–Sn semiconductors for band-gap and lattice engineering

M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya.
Applied Physics Letters (2002)

317 Citations

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

John Kouvetakis;Jose Menendez;Andrew Chizmeshya.
Annual Review of Materials Research (2006)

304 Citations

Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

Vijay R. D'Costa;Candi S. Cook;Anthony Birdwell;Chris L. Littler.
Physical Review B (2006)

289 Citations

Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

John Kouvetakis;Matthew Bauer;Jose Menendez;Chang Wu Hu.
(2004)

249 Citations

Hybrid Group IV/III-V Semiconductor Structures

John Kouvetakis;Jose Menendez.
(2009)

244 Citations

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

J. Mathews;R. T. Beeler;J. Tolle;C. Xu.
Applied Physics Letters (2010)

217 Citations

Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs.

José Menéndez;Manuel Cardona.
Physical Review B (1985)

199 Citations

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