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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 36 5375 5161 86 84 282 4988

Xiao Gong publications per year

The chart shows the history of publications by Xiao Gong between 1995 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Xiao Gong published across 31 years, from 1995 to 2025, averaging 11.7 papers a year. Output peaked at 40 publications in 2019. 69 of the 364 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1995 to 2025. Vertical axis: number of publications, 0 to 40. Peak 40 publications in 2019. 1995: 1 publication 1996: 0 publications 1997: 0 publications 1998: 1 publication 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 1 publication 2005: 1 publication 2006: 1 publication 2007: 0 publications 2008: 1 publication 2009: 1 publication 2010: 8 publications 2011: 13 publications 2012: 18 publications 2013: 20 publications 2014: 9 publications 2015: 12 publications 2016: 14 publications 2017: 18 publications 2018: 26 publications 2019: 40 publications 2020: 24 publications 2021: 30 publications 2022: 22 publications 2023: 34 publications 2024: 34 publications 2025: 35 publications
1995 2025

364 publications in total across all disciplines

View publications per year as a table
Xiao Gong: publications per year, 1995 to 2025
Year Publications
1995 1
1996 0
1997 0
1998 1
1999 0
2000 0
2001 0
2002 0
2003 0
2004 1
2005 1
2006 1
2007 0
2008 1
2009 1
2010 8
2011 13
2012 18
2013 20
2014 9
2015 12
2016 14
2017 18
2018 26
2019 40
2020 24
2021 30
2022 22
2023 34
2024 34
2025 35
Total 364
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Xiao Gong publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Xiao Gong sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 274–293 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 282 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335 282
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Xiao Gong D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Xiao Gong sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 36 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211 36
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Xiao Gong is affiliated with the National University of Singapore, where their research primarily focuses on engineering with a concentration in electrical and electronic engineering. Their scholarly contributions span multiple subfields including materials chemistry, biomedical engineering, atomic and molecular physics, optics, and artificial intelligence.

Their work encompasses several main research topics, including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Photonic and Optical Devices
  • Thin-Film Transistor Technologies
  • Advanced Photonic Communication Systems
  • Advancements in Semiconductor Devices and Circuit Design

Xiao Gong has contributed to numerous publications across a range of scientific journals and venues. Frequent publication venues include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Nature Communications
  • arXiv (Cornell University)
  • Optics Express

Among recent papers featuring Xiao Gong's work are:

  • High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm, 2020, Optics Express
  • Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning, 2021, Nature Communications
  • An Electronic Synapse Based on 2D Ferroelectric CuInP2S6, 2020, Advanced Electronic Materials
  • A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide, 2020, Advanced Electronic Materials
  • Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity, 2020, IEEE Electron Device Letters

Collaborations have featured frequent coauthors including:

  • Chen Sun
  • Kaizhen Han
  • Zijie Zheng
  • Zuopu Zhou
  • Qiwen Kong

Xiao Gong's research contributions address a range of topics at the intersection of semiconductor technology and device engineering, often incorporating techniques from materials chemistry and artificial intelligence to optimize device fabrication and performance. Their interdisciplinary approach covers both theoretical and applied aspects of emerging semiconductor devices, memory systems, and photonic components.

Best Publications

  • Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

    O. Moutanabbir;S. Assali;X. Gong;E. O'Reilly

  • Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

    Lin Wang;Wugang Liao;Swee Liang Wong;Zhi Gen Yu

  • A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

    Xuewei Feng;Yida Li;Lin Wang;Shuai Chen

  • Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering

    Z. P. Ling;R. Yang;J. W. Chai;S. J. Wang

  • Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

    Xiao Gong;Genquan Han;Fan Bai;Shaojian Su

  • High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

    Shengqiang Xu;Wei Wang;Yi-Chiau Huang;Yuan Dong

  • Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

    Yuan Dong;Wei Wang;Shengqiang Xu;Dian Lei

  • Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning.

    Xinyu Chen;Yufeng Xie;Yaochen Sheng;Hongwei Tang

  • Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

    Yuan Dong;Wei Wang;Dian Lei;Xiao Gong

  • High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm.

    Hao Zhou;Shengqiang Xu;Yiding Lin;Yi-Chiau Huang

  • An Electronic Synapse Based on 2D Ferroelectric CuInP2S6

    Bochang Li;Sifan Li;Han Wang;Li Chen

  • Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

    Ran Cheng;Wei Wang;Xiao Gong;Linfeng Sun

  • A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

    Li Chen;Lin Wang;Yue Peng;Xuewei Feng

  • III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

    Hock-Chun Chin;Xiao Gong;Lanxiang Wang;Hock Koon Lee

  • Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO 2 Gate Dielectric and Excellent Uniformity

    Subhranu Samanta;Umesh Chand;Shengqiang Xu;Kaizhen Han

  • Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

    Hock-Chun Chin;Xinke Liu;Xiao Gong;Yee-Chia Yeo

  • Evaluation of Negative Capacitance Ferroelectric MOSFET for Analog Circuit Applications

    Yang Li;Yuye Kang;Xiao Gong

  • Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

    Yue Yang;Shaojian Su;Pengfei Guo;Wei Wang

  • Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs

    Hock-Chun Chin;Xiao Gong;Xinke Liu;Yee-Chia Yeo

  • Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

    Yuan Dong;Wei Wang;Xin Xu;Xiao Gong

  • In0.7Ga0.3As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

    Xingui Zhang;Huaxin Guo;Xiao Gong;Qian Zhou

  • Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

    Yue Yang;Genquan Han;Pengfei Guo;Wei Wang

Frequent Co-Authors

Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Gengchiau Liang
Gengchiau Liang National Yang Ming Chiao Tung University
Ying Wu
Ying Wu Northwestern University
Genquan Han
Genquan Han Xidian University
Chuan Seng Tan
Chuan Seng Tan Nanyang Technological University
Bin Liu
Bin Liu National University of Singapore
Aaron Thean
Aaron Thean National University of Singapore
Kah-Wee Ang
Kah-Wee Ang National University of Singapore
Jisheng Pan
Jisheng Pan Agency for Science, Technology and Research
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)

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