Xiao Gong

Overview

Best Publications

• Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

  O. Moutanabbir;S. Assali;X. Gong;E. O'Reilly

  267
  Citations

• Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

  Lin Wang;Wugang Liao;Swee Liang Wong;Zhi Gen Yu

  257
  Citations

• A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

  Xuewei Feng;Yida Li;Lin Wang;Shuai Chen

  200
  Citations

• Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering

  Z. P. Ling;R. Yang;J. W. Chai;S. J. Wang

  125
  Citations

• Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

  Xiao Gong;Genquan Han;Fan Bai;Shaojian Su

  123
  Citations

• High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

  Shengqiang Xu;Wei Wang;Yi-Chiau Huang;Yuan Dong

  105
  Citations

• Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

  Yuan Dong;Wei Wang;Shengqiang Xu;Dian Lei

  103
  Citations

• Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning.

  Xinyu Chen;Yufeng Xie;Yaochen Sheng;Hongwei Tang

  102
  Citations

• Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

  Yuan Dong;Wei Wang;Dian Lei;Xiao Gong

  101
  Citations

• High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm.

  Hao Zhou;Shengqiang Xu;Yiding Lin;Yi-Chiau Huang

  98
  Citations

• An Electronic Synapse Based on 2D Ferroelectric CuInP2S6

  Bochang Li;Sifan Li;Han Wang;Li Chen

  97
  Citations

• Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

  Ran Cheng;Wei Wang;Xiao Gong;Linfeng Sun

  93
  Citations

• A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

  Li Chen;Lin Wang;Yue Peng;Xuewei Feng

  92
  Citations

• III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

  Hock-Chun Chin;Xiao Gong;Lanxiang Wang;Hock Koon Lee

  90
  Citations

• Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO 2 Gate Dielectric and Excellent Uniformity

  Subhranu Samanta;Umesh Chand;Shengqiang Xu;Kaizhen Han

  82
  Citations

• Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

  Hock-Chun Chin;Xinke Liu;Xiao Gong;Yee-Chia Yeo

  81
  Citations

• Evaluation of Negative Capacitance Ferroelectric MOSFET for Analog Circuit Applications

  Yang Li;Yuye Kang;Xiao Gong

  79
  Citations

• Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

  Yue Yang;Shaojian Su;Pengfei Guo;Wei Wang

  71
  Citations

• Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs

  Hock-Chun Chin;Xiao Gong;Xinke Liu;Yee-Chia Yeo

  71
  Citations

• Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

  Yuan Dong;Wei Wang;Xin Xu;Xiao Gong

  67
  Citations

• In0.7Ga0.3As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

  Xingui Zhang;Huaxin Guo;Xiao Gong;Qian Zhou

  66
  Citations

• Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

  Yue Yang;Genquan Han;Pengfei Guo;Wei Wang

  64
  Citations