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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
10722
World Ranking
3172
National Ranking
44

Overview

Clement Hsingjen Wann is affiliated with Taiwan Semiconductor Manufacturing Company located in Taiwan. The professional focus and career are centered within this primary institution.

No specific records are available regarding recent papers authored by this individual, resulting in an absence of detailed publication information such as titles, years, or venues. Likewise, there is no available data on frequent co-authors or recurring publication venues.

Information about book publications, including publishers and quantities, has not been provided.

Details concerning main fields of study, subfields, and principal research topics related to Clement Hsingjen Wann are not specified.

The profile does not include data on awards or honors received across the career timeline.

Best Publications

  • Semiconductor Devices and Methods of Manufacture Thereof

    Ji-Yin Tsai;Yao-Tsung Huang;Chih-Hsin Ko;Clement Hsingjen Wann

  • System and methods for converting planar design to FinFET design

    Yi-Tang Lin;Cheok-Kei Lei;Shu-Yu Chen;Yu-Ning Chang

  • Contact Structure of Semiconductor Device

    Sung-Li Wang;Ding-Kang Shih;Chin-Hsiang Lin;Sey-Ping Sun

  • Silicon germanium source/drain regions

    Ji-Yin Tsai;Yao-Tsung Huang;Chih-Hsin Ko;Clement Hsingjen Wann

  • Novel Fin Structure of FinFet

    Gin-Chen Huang;Ching-Hong Jiang;Neng-Kuo Chen;Sey-Ping Sun

  • Germanium fin fet having metal gate and stressor

    Chih-Chieh Yeh;智勝 張

  • Finfet devices with unique fin shape and the fabrication thereof

    Yi-Jing Lee;Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann

  • A comparative study of advanced MOSFET concepts

    C.H. Wann;K. Noda;K. Noda;T. Tanaka;M. Yoshida;M. Yoshida

  • Semiconductor Structures and Methods of Forming Thereof

    Wu Cheng-Hsien;Ko Chih-Hsin;Wann Clement Hsingjen

  • FINFET Device Having a Channel Defined in a Diamond-Like Shape Semiconductor Structure

    You-Ru Lin;Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann

  • Strained structure of semiconductor device and method of making the strained structure

    Tsung-Lin Lee;Chih Chieh Yeh;Feng Yuan;Cheng-Yi Peng

  • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

    H.S. Yang;R. Malik;S. Narasimha;Y. Li

  • METAL GATE STRESS FILM FOR MOBILITY ENHANCEMENT IN FinFET DEVICE

    Jeff J. Xu;Clement H. Wann;Chih Chieh Yeh;Chih-Sheng Chang

  • FinFET device and method for manufacturing the same

    Huang Yu Lien;Tsai Ming Huan;Wann Clement Hsingjen

  • Methods for Semiconductor Regrowth

    Cheng-Tien Wan;You-Ru Lin;Yi-Jing Lee;Cheng-Hsien Wu

  • FinFET design and method of fabricating same

    Cheng-Hsien Wu;Chih-Hsin Ko;Yao-Tsung Huang;Clement Hsingjen Wann

  • Method of fabrication of a semiconductor device having reduced pitch

    Ming-Feng Shieh;Shinn-Sheng Yu;Anthony Yen;Shao-Ming Yu

  • Integrated circuit, fin field effect transistor (finfet) and fabrication method thereof

    Yeh Chih Chieh;Chang Chih-Sheng;Wann Clement Hsingjen

  • Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces

    Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann

  • Device having source/drain regions regrown from un-relaxed silicon layer

    Clement Hsingjen Wann;Chih-Hsin Ko;Yao-Tsung Huang;Cheng-Ying Huang

Frequent Co-Authors

Yuan Taur
Yuan Taur University of California, San Diego
Xiao Gong
Xiao Gong National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Cyril Cabral
Cyril Cabral IBM (United States)
Terence B. Hook
Terence B. Hook IBM (United States)
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Vijay Narayanan
Vijay Narayanan IBM (United States)
Christian Lavoie
Christian Lavoie IBM (United States)
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University

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