World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
10722
World Ranking
3172
National Ranking
44

Clement Hsingjen Wann publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Clement Hsingjen Wann sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 190 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Clement Hsingjen Wann D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Clement Hsingjen Wann sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Clement Hsingjen Wann is affiliated with Taiwan Semiconductor Manufacturing Company located in Taiwan. The professional focus and career are centered within this primary institution.

No specific records are available regarding recent papers authored by this individual, resulting in an absence of detailed publication information such as titles, years, or venues. Likewise, there is no available data on frequent co-authors or recurring publication venues.

Information about book publications, including publishers and quantities, has not been provided.

Details concerning main fields of study, subfields, and principal research topics related to Clement Hsingjen Wann are not specified.

The profile does not include data on awards or honors received across the career timeline.

Best Publications

  • Semiconductor Devices and Methods of Manufacture Thereof

    Ji-Yin Tsai;Yao-Tsung Huang;Chih-Hsin Ko;Clement Hsingjen Wann

  • System and methods for converting planar design to FinFET design

    Yi-Tang Lin;Cheok-Kei Lei;Shu-Yu Chen;Yu-Ning Chang

  • Contact Structure of Semiconductor Device

    Sung-Li Wang;Ding-Kang Shih;Chin-Hsiang Lin;Sey-Ping Sun

  • Silicon germanium source/drain regions

    Ji-Yin Tsai;Yao-Tsung Huang;Chih-Hsin Ko;Clement Hsingjen Wann

  • Novel Fin Structure of FinFet

    Gin-Chen Huang;Ching-Hong Jiang;Neng-Kuo Chen;Sey-Ping Sun

  • Germanium fin fet having metal gate and stressor

    Chih-Chieh Yeh;智勝 張

  • Finfet devices with unique fin shape and the fabrication thereof

    Yi-Jing Lee;Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann

  • A comparative study of advanced MOSFET concepts

    C.H. Wann;K. Noda;K. Noda;T. Tanaka;M. Yoshida;M. Yoshida

  • Semiconductor Structures and Methods of Forming Thereof

    Wu Cheng-Hsien;Ko Chih-Hsin;Wann Clement Hsingjen

  • FINFET Device Having a Channel Defined in a Diamond-Like Shape Semiconductor Structure

    You-Ru Lin;Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann

  • Strained structure of semiconductor device and method of making the strained structure

    Tsung-Lin Lee;Chih Chieh Yeh;Feng Yuan;Cheng-Yi Peng

  • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

    H.S. Yang;R. Malik;S. Narasimha;Y. Li

  • METAL GATE STRESS FILM FOR MOBILITY ENHANCEMENT IN FinFET DEVICE

    Jeff J. Xu;Clement H. Wann;Chih Chieh Yeh;Chih-Sheng Chang

  • FinFET device and method for manufacturing the same

    Huang Yu Lien;Tsai Ming Huan;Wann Clement Hsingjen

  • Methods for Semiconductor Regrowth

    Cheng-Tien Wan;You-Ru Lin;Yi-Jing Lee;Cheng-Hsien Wu

  • FinFET design and method of fabricating same

    Cheng-Hsien Wu;Chih-Hsin Ko;Yao-Tsung Huang;Clement Hsingjen Wann

  • Method of fabrication of a semiconductor device having reduced pitch

    Ming-Feng Shieh;Shinn-Sheng Yu;Anthony Yen;Shao-Ming Yu

  • Integrated circuit, fin field effect transistor (finfet) and fabrication method thereof

    Yeh Chih Chieh;Chang Chih-Sheng;Wann Clement Hsingjen

  • Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces

    Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann

  • Device having source/drain regions regrown from un-relaxed silicon layer

    Clement Hsingjen Wann;Chih-Hsin Ko;Yao-Tsung Huang;Cheng-Ying Huang

Frequent Co-Authors

Yuan Taur
Yuan Taur University of California, San Diego
Xiao Gong
Xiao Gong National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Cyril Cabral
Cyril Cabral IBM (United States)
Terence B. Hook
Terence B. Hook IBM (United States)
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Vijay Narayanan
Vijay Narayanan IBM (United States)
Christian Lavoie
Christian Lavoie IBM (United States)
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University

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