While working on this project, Clement Hsingjen Wann studies both Electrical engineering and Engineering physics. His work often combines Engineering physics and Electrical engineering studies. Clement Hsingjen Wann carries out multidisciplinary research, doing studies in Optoelectronics and Transistor. Transistor and Optoelectronics are two areas of study in which Clement Hsingjen Wann engages in interdisciplinary research. His MOSFET study often links to related topics such as Voltage. As part of his studies on Voltage, Clement Hsingjen Wann frequently links adjacent subjects like MOSFET. Many of his studies on Reduction (mathematics) apply to Geometry as well. His research combines Reduction (mathematics) and Geometry. His research on Leakage (economics) frequently links to adjacent areas such as Macroeconomics.
His research on Optoelectronics frequently connects to adjacent areas such as Band diagram. He merges Band diagram with Band gap in his research. He integrates Band gap with Semimetal in his research. His Semimetal study frequently draws connections between adjacent fields such as Optoelectronics. His Layer (electronics) study frequently draws connections to adjacent fields such as Atomic layer deposition. His Atomic layer deposition study frequently links to adjacent areas such as Layer (electronics). Clement Hsingjen Wann undertakes multidisciplinary studies into Nanotechnology and Transmission electron microscopy in his work. Much of his study explores Electrical engineering relationship to Channel (broadcasting). His Channel (broadcasting) study frequently intersects with other fields, such as Electrical engineering.
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Semiconductor Devices and Methods of Manufacture Thereof
Ji-Yin Tsai;Yao-Tsung Huang;Chih-Hsin Ko;Clement Hsingjen Wann.
(2012)
System and methods for converting planar design to FinFET design
Yi-Tang Lin;Cheok-Kei Lei;Shu-Yu Chen;Yu-Ning Chang.
(2012)
Contact Structure of Semiconductor Device
Sung-Li Wang;Ding-Kang Shih;Chin-Hsiang Lin;Sey-Ping Sun.
(2012)
Nanoscale CMOS
H.-S.P. Wong;D.J. Frank;P.M. Solomon;C.H.J. Wann.
Proceedings of the IEEE (1999)
Silicon germanium source/drain regions
Ji-Yin Tsai;Yao-Tsung Huang;Chih-Hsin Ko;Clement Hsingjen Wann.
(2015)
Novel Fin Structure of FinFet
Gin-Chen Huang;Ching-Hong Jiang;Neng-Kuo Chen;Sey-Ping Sun.
(2016)
Germanium fin fet having metal gate and stressor
Chih-Chieh Yeh;智勝 張.
(2015)
Finfet devices with unique fin shape and the fabrication thereof
Yi-Jing Lee;Cheng-Hsien Wu;Chih-Hsin Ko;Clement Hsingjen Wann.
(2014)
25 nm CMOS design considerations
Y. Taur;C.H. Wann;D.J. Frank.
international electron devices meeting (1998)
Semiconductor Structures and Methods of Forming Thereof
Wu Cheng-Hsien;Ko Chih-Hsin;Wann Clement Hsingjen.
(2021)
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