World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6988
World Ranking
4481
National Ranking
672

Overview

Huilong Zhu is a researcher affiliated with the Chinese Academy of Sciences in China. Their work primarily spans the fields of biochemistry, genetics, molecular biology, and medicine, with a focus on specialized subfields including molecular biology, pulmonary and respiratory medicine, spectroscopy, physiology, and cancer research.

The scientist's research interests center on metabolomics and mass spectrometry studies, ferroptosis and cancer prognosis, cancer-related molecular mechanisms, extracellular vesicles in disease, as well as advanced proteomics and spectroscopy techniques applied in biomedical and chemical research.

Huilong Zhu's recent publications include:

  • PAFAH2 suppresses synchronized ferroptosis to ameliorate acute kidney injury, 2024, Nature Chemical Biology
  • Advances in mass spectrometry-based multi-scale metabolomic methodologies and their applications in biological and clinical investigations, 2023, Science Bulletin
  • A super-resolution strategy for mass spectrometry imaging via transfer learning, 2023, Nature Machine Intelligence
  • Integrative single-cell metabolomics and phenotypic profiling reveals metabolic heterogeneity of cellular oxidation and senescence, 2025, Nature Communications
  • Metabolism and metabolomics in senescence, aging, and age-related diseases: a multiscale perspective, 2025, Frontiers of Medicine

The frequent coauthors collaborating with Huilong Zhu are:

  • Wei Xiong
  • Chenjian Miao
  • Ziyi Wang
  • Tiepeng Liao
  • Qi Chen

Huilong Zhu has published multiple papers in several leading scientific journals. Notable venues include:

  • Nature Chemical Biology
  • Science Bulletin
  • Nature Machine Intelligence
  • Nature Communications
  • Frontiers of Medicine

The scientist's work contributes to understanding metabolic and molecular mechanisms with applications in clinical and biological investigations. Their expertise in mass spectrometry and metabolomic methodologies intersects with research on cellular processes such as ferroptosis, senescence, and aging.

Best Publications

  • MOSFET with super-steep retrograded island

    Huilong Zhu;Effendi Leobandung;Anda C. Mocuta;Dan M. Mocuta

  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

    K. Rim;J. Chu;H. Chen;K.A. Jenkins

  • 3d integrated circuits structure

    Mukta G. Farooq;Subramanian S. Iyer;Steven J. Koester;Huilong Zhu

  • Sintering processes of two nanoparticles: A study by molecular dynamics simulations

    Huilong Zhu

  • Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

    Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang

  • Body-contacted finfet

    Huilong Zhu;Thomas W. Dyer;Jack A. Mandelman;Werner Rausch

  • Structure and method for fabricating self-aligned metal contacts

    Huilong Zhu;Werner Rausch

  • Structures and methods for making strained mosfets

    Huilong Zhu;Steven W. Bedell;Bruce B. Doris;Ying Zhang

  • Enhanced mobility cmos transistors with a v-shaped channel with self-alignment to shallow trench isolation

    Huilong Zhu;Thomas W. Dyer

  • Method and manufacture of thin silicon on insulator (SOI) with recessed channel

    Huilong Zhu;Bruce B. Doris;Werner A. Rausch;Ying Zhang

  • structure and method of manufacturing a finFet device having stacked fins

    Huilong Zhu;Bruce B. Doris

  • Strained silicon NMOS devices with embedded source/drain

    Dureseti Chidambarrao;Effendi Leobandung;Anda C. Mocuta;Haining S. Yang

  • High mobility CMOS circuits

    Bruce B. Doris;Oleg G. Gluschenkov;Huilong Zhu

  • Structure and method for manufacturing strained FINFET

    Huilong Zhu;Bruce B. Doris

  • Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

    K. Rim;R. Anderson;D. Boyd;F. Cardone

  • Methods for manufacturing bulk silicon and SOI CMOS devices by gate stress engineering with SiGe and/or Si:C

    Zhu Hui-Long;Doris Bruce B;Chen Hua-Jie

  • Structure and method to regulate carrier moving rate in semiconductor device

    Doris Bruce B;Haining Yang;Huilong Zhu

  • Method for forming retrograded well for MOSFET

    Huilong Zhu;Zhijiong Luo;Qingqing Liang;Haizhou Yin

  • Semiconductor device structure with active regions having different surface directions

    Bruce B. Doris;Oleg Gluschenkov;Meikei Ieong;Effendi Leobandung

  • High performance and low power transistors integrated in 65nm bulk CMOS technology

    Z. Luo;A. Steegen;M. Eller;R. Mann

Frequent Co-Authors

Bruce B. Doris
Bruce B. Doris IBM (United States)
Oleg Gluschenkov
Oleg Gluschenkov IBM (United States)
Dureseti Chidambarrao
Dureseti Chidambarrao IBM (United States)
Meikei Ieong
Meikei Ieong Simbury Limited
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox
Carl J. Radens
Carl J. Radens IBM (United States)
John A. Ott
John A. Ott IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
Clement Hsingjen Wann
Clement Hsingjen Wann Taiwan Semiconductor Manufacturing Company (Taiwan)
Diane C. Boyd
Diane C. Boyd IBM (United States)

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