D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 45 Citations 8,243 455 World Ranking 2152 National Ranking 908

Research.com Recognitions

Awards & Achievements

2019 - IEEE Fellow For contributions to fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Transistor

Ali Khakifirooz mainly investigates Optoelectronics, Electrical engineering, Electronic engineering, CMOS and Semiconductor device. His Optoelectronics research incorporates elements of Layer, Gate oxide and Field-effect transistor. His Electrical engineering research is multidisciplinary, incorporating perspectives in Etching and Parasitic capacitance.

The concepts of his Electronic engineering study are interwoven with issues in Ion implantation and Electron mobility. Ali Khakifirooz combines subjects such as Threshold voltage and Transistor with his study of CMOS. He interconnects Fin, Nanowire and Dielectric layer in the investigation of issues within Semiconductor device.

His most cited work include:

  • A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters (163 citations)
  • Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications (160 citations)
  • High-k/metal gate cmos finfet with improved pfet threshold voltage (157 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electronic engineering, Layer, Semiconductor and Electrical engineering. The Optoelectronics study combines topics in areas such as Semiconductor device, Epitaxy, Field-effect transistor and Substrate, Gate oxide. His Electronic engineering study integrates concerns from other disciplines, such as Semiconductor structure, Wafer, Silicon, Strained silicon and Composite material.

His Layer study incorporates themes from Fin, Oxide and Integrated circuit. Ali Khakifirooz usually deals with Semiconductor and limits it to topics linked to Fin and Structural engineering. His work carried out in the field of Electrical engineering brings together such families of science as Silicon on insulator and Doping.

He most often published in these fields:

  • Optoelectronics (84.06%)
  • Electronic engineering (32.28%)
  • Layer (30.91%)

What were the highlights of his more recent work (between 2015-2019)?

  • Optoelectronics (84.06%)
  • Semiconductor (29.92%)
  • Semiconductor device (25.98%)

In recent papers he was focusing on the following fields of study:

Ali Khakifirooz mainly investigates Optoelectronics, Semiconductor, Semiconductor device, Electronic engineering and Layer. His Optoelectronics study combines topics in areas such as Fin, Substrate and Epitaxy. His Semiconductor research includes elements of Barrier layer, Electrical conductor, Conductive materials and Silicon on insulator.

Ali Khakifirooz works mostly in the field of Semiconductor device, limiting it down to concerns involving Semiconductor materials and, occasionally, Pillar. His research investigates the connection between Electronic engineering and topics such as Germanium that intersect with problems in Annealing. His research in the fields of Semiconductor structure overlaps with other disciplines such as Planar.

Between 2015 and 2019, his most popular works were:

  • Dual work function integration for stacked FinFET (32 citations)
  • Method of preventing epitaxy creeping under the spacer (25 citations)
  • Self-aligned contacts for vertical field effect transistors (19 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Ali Khakifirooz mainly focuses on Optoelectronics, Electronic engineering, Semiconductor device, Epitaxy and Layer. Ali Khakifirooz is interested in Semiconductor, which is a field of Optoelectronics. The study incorporates disciplines such as Substrate and Dopant in addition to Semiconductor.

His study in Semiconductor device is interdisciplinary in nature, drawing from both Transistor, Vertical field and Semiconductor materials. Ali Khakifirooz focuses mostly in the field of Epitaxy, narrowing it down to topics relating to Dielectric and, in certain cases, Epitaxial material and Undercut. His study in the fields of Substrate and Semiconductor structure under the domain of Layer overlaps with other disciplines such as Planar.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

A. Khakifirooz;O.M. Nayfeh;D. Antoniadis.
IEEE Transactions on Electron Devices (2009)

244 Citations

Integrated circuit with a thin body field effect transistor and capacitor

Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi.
(2012)

206 Citations

Extrem-dünner-Halbleiter-auf-Isolator(ETSOI)-FET mit einem Rück-Gate und verringerter Parasitärkapazität sowie Verfahren zu dessen Herstellung

Khakifirooz Ali;Doris Bruce B;Cheng Kangguo.
(2012)

203 Citations

High-k/metal gate cmos finfet with improved pfet threshold voltage

Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier.
(2009)

203 Citations

Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations

D. A. Antoniadis;I. Aberg;C. Ní Chléirigh;O. M. Nayfeh.
Ibm Journal of Research and Development (2006)

180 Citations

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth.
international electron devices meeting (2009)

165 Citations

MOSFET Performance Scaling—Part I: Historical Trends

A. Khakifirooz;D.A. Antoniadis.
IEEE Transactions on Electron Devices (2008)

135 Citations

Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence

Ali Khakifirooz;Dimitri A. Antoniadis.
international electron devices meeting (2006)

118 Citations

Integrated circuits including finfet devices and methods for fabricating the same

Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng.
(2014)

114 Citations

MOSFET Performance Scaling—Part II: Future Directions

A. Khakifirooz;D.A. Antoniadis.
IEEE Transactions on Electron Devices (2008)

111 Citations

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