2019 - IEEE Fellow For contributions to fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology
Ali Khakifirooz mainly investigates Optoelectronics, Electrical engineering, Electronic engineering, CMOS and Semiconductor device. His Optoelectronics research incorporates elements of Layer, Gate oxide and Field-effect transistor. His Electrical engineering research is multidisciplinary, incorporating perspectives in Etching and Parasitic capacitance.
The concepts of his Electronic engineering study are interwoven with issues in Ion implantation and Electron mobility. Ali Khakifirooz combines subjects such as Threshold voltage and Transistor with his study of CMOS. He interconnects Fin, Nanowire and Dielectric layer in the investigation of issues within Semiconductor device.
His main research concerns Optoelectronics, Electronic engineering, Layer, Semiconductor and Electrical engineering. The Optoelectronics study combines topics in areas such as Semiconductor device, Epitaxy, Field-effect transistor and Substrate, Gate oxide. His Electronic engineering study integrates concerns from other disciplines, such as Semiconductor structure, Wafer, Silicon, Strained silicon and Composite material.
His Layer study incorporates themes from Fin, Oxide and Integrated circuit. Ali Khakifirooz usually deals with Semiconductor and limits it to topics linked to Fin and Structural engineering. His work carried out in the field of Electrical engineering brings together such families of science as Silicon on insulator and Doping.
Ali Khakifirooz mainly investigates Optoelectronics, Semiconductor, Semiconductor device, Electronic engineering and Layer. His Optoelectronics study combines topics in areas such as Fin, Substrate and Epitaxy. His Semiconductor research includes elements of Barrier layer, Electrical conductor, Conductive materials and Silicon on insulator.
Ali Khakifirooz works mostly in the field of Semiconductor device, limiting it down to concerns involving Semiconductor materials and, occasionally, Pillar. His research investigates the connection between Electronic engineering and topics such as Germanium that intersect with problems in Annealing. His research in the fields of Semiconductor structure overlaps with other disciplines such as Planar.
Ali Khakifirooz mainly focuses on Optoelectronics, Electronic engineering, Semiconductor device, Epitaxy and Layer. Ali Khakifirooz is interested in Semiconductor, which is a field of Optoelectronics. The study incorporates disciplines such as Substrate and Dopant in addition to Semiconductor.
His study in Semiconductor device is interdisciplinary in nature, drawing from both Transistor, Vertical field and Semiconductor materials. Ali Khakifirooz focuses mostly in the field of Epitaxy, narrowing it down to topics relating to Dielectric and, in certain cases, Epitaxial material and Undercut. His study in the fields of Substrate and Semiconductor structure under the domain of Layer overlaps with other disciplines such as Planar.
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A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
A. Khakifirooz;O.M. Nayfeh;D. Antoniadis.
IEEE Transactions on Electron Devices (2009)
Integrated circuit with a thin body field effect transistor and capacitor
Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi.
(2012)
Extrem-dünner-Halbleiter-auf-Isolator(ETSOI)-FET mit einem Rück-Gate und verringerter Parasitärkapazität sowie Verfahren zu dessen Herstellung
Khakifirooz Ali;Doris Bruce B;Cheng Kangguo.
(2012)
High-k/metal gate cmos finfet with improved pfet threshold voltage
Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier.
(2009)
Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations
D. A. Antoniadis;I. Aberg;C. Ní Chléirigh;O. M. Nayfeh.
Ibm Journal of Research and Development (2006)
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth.
international electron devices meeting (2009)
MOSFET Performance Scaling—Part I: Historical Trends
A. Khakifirooz;D.A. Antoniadis.
IEEE Transactions on Electron Devices (2008)
Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence
Ali Khakifirooz;Dimitri A. Antoniadis.
international electron devices meeting (2006)
Integrated circuits including finfet devices and methods for fabricating the same
Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng.
(2014)
MOSFET Performance Scaling—Part II: Future Directions
A. Khakifirooz;D.A. Antoniadis.
IEEE Transactions on Electron Devices (2008)
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