World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
8677
World Ranking
3376
National Ranking
1243

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology

Overview

Ali Khakifirooz is a researcher affiliated with Intel in the United States. Their work primarily spans the fields of computer science, electrical and electronic engineering, and explores topics related to advanced data storage technologies, cellular automata and applications, as well as semiconductor materials and devices.

Khakifirooz has contributed to several publications in reputable venues including the IEEE Solid-State Circuits Letters and the IEEE Journal of the Electron Devices Society. Notable papers include:

  • A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm2 Bit Density (2023, IEEE Solid-State Circuits Letters)
  • Introduction to the Special Section on the 2019 IEEE S3S Conference (2020, IEEE Journal of the Electron Devices Society)

Their frequent coauthors include Eduardo Anaya, Sriram Balasubrahmanyam, Geoff Bennett, Daniel Castro, and John Egler. These collaborations reflect a networked approach to advancing research in their specialized areas.

Khakifirooz's research subjects cover several specialized domains such as:

  • Advanced Data Storage Technologies
  • Cellular Automata and Applications
  • Semiconductor materials and devices

The scientist's main fields of study focus on:

  • Computer Science

Within subfields, their work touches on:

  • Computer Networks and Communications
  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

In recognition of their contributions to technology, Ali Khakifirooz was awarded the IEEE Fellow distinction in 2019 for their work on fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology.

Best Publications

  • A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

    A. Khakifirooz;O.M. Nayfeh;D. Antoniadis

  • Integrated circuit with a thin body field effect transistor and capacitor

    Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi

  • High-k/metal gate cmos finfet with improved pfet threshold voltage

    Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier

  • Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations

    D. A. Antoniadis;I. Aberg;C. Ní Chléirigh;O. M. Nayfeh

  • Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

    K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth

  • MOSFET Performance Scaling—Part I: Historical Trends

    A. Khakifirooz;D.A. Antoniadis

  • Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence

    Ali Khakifirooz;Dimitri A. Antoniadis

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Strain scaling for CMOS

    S. W. Bedell;A. Khakifirooz;D. K. Sadana

  • MOSFET Performance Scaling—Part II: Future Directions

    A. Khakifirooz;D.A. Antoniadis

  • Integrated circuits including finfet devices and methods for fabricating the same

    Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng

  • Finfet structures having silicon germanium and silicon fins

    Kangguo Cheng;Bruce B. Doris;Ali Khakifirooz;Alexander Reznicek

  • High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

    Q. Liu;M. Vinet;J. Gimbert;N. Loubet

  • Junction field effect transistor with an epitaxially grown gate structure

    Tak H. Ning;Kangguo Cheng;Ali Khakifirooz;Pranita Kerber

  • Semiconductor devices fabricated by doped material layer as dopant source

    Kangguo Cheng;Bruce B. Doris;Balasubramanian S. Haran;Ali Khakifirooz

  • Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

    Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz

  • Bulk finfet with punchthrough stopper region and method of fabrication

    Kangguo Cheng;Ali Khakifirooz;Shom Ponoth;Ragvahasimhan Sreenivasan

  • Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

    A. Ritenour;A. Khakifirooz;D. A. Antoniadis;R. Z. Lei

  • Nanowire transistor structures with merged source/drain regions using auxiliary pillars

    Pouya Hashemi;Ali Khakifirooz;Alexander Reznicek

  • Method and structure for forming a localized SOI finFET

    Kangguo Cheng;Ali Khakifirooz;Kern Rim;Ramachandra Divakaruni

Frequent Co-Authors

Kangguo Cheng
Kangguo Cheng IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Ruilong Xie
Ruilong Xie IBM (United States)
Stephen W. Bedell
Stephen W. Bedell IBM (United States)
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Tak H. Ning
Tak H. Ning IBM (United States)

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