World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
8677
World Ranking
3376
National Ranking
1244

Ali Khakifirooz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ali Khakifirooz sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 484 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ali Khakifirooz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ali Khakifirooz sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology

Overview

Ali Khakifirooz is a researcher affiliated with Intel in the United States. Their work primarily spans the fields of computer science, electrical and electronic engineering, and explores topics related to advanced data storage technologies, cellular automata and applications, as well as semiconductor materials and devices.

Khakifirooz has contributed to several publications in reputable venues including the IEEE Solid-State Circuits Letters and the IEEE Journal of the Electron Devices Society. Notable papers include:

  • A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm2 Bit Density (2023, IEEE Solid-State Circuits Letters)
  • Introduction to the Special Section on the 2019 IEEE S3S Conference (2020, IEEE Journal of the Electron Devices Society)

Their frequent coauthors include Eduardo Anaya, Sriram Balasubrahmanyam, Geoff Bennett, Daniel Castro, and John Egler. These collaborations reflect a networked approach to advancing research in their specialized areas.

Khakifirooz's research subjects cover several specialized domains such as:

  • Advanced Data Storage Technologies
  • Cellular Automata and Applications
  • Semiconductor materials and devices

The scientist's main fields of study focus on:

  • Computer Science

Within subfields, their work touches on:

  • Computer Networks and Communications
  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

In recognition of their contributions to technology, Ali Khakifirooz was awarded the IEEE Fellow distinction in 2019 for their work on fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology.

Best Publications

  • A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

    A. Khakifirooz;O.M. Nayfeh;D. Antoniadis

  • Integrated circuit with a thin body field effect transistor and capacitor

    Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi

  • High-k/metal gate cmos finfet with improved pfet threshold voltage

    Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier

  • Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations

    D. A. Antoniadis;I. Aberg;C. Ní Chléirigh;O. M. Nayfeh

  • Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

    K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth

  • MOSFET Performance Scaling—Part I: Historical Trends

    A. Khakifirooz;D.A. Antoniadis

  • Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence

    Ali Khakifirooz;Dimitri A. Antoniadis

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Strain scaling for CMOS

    S. W. Bedell;A. Khakifirooz;D. K. Sadana

  • MOSFET Performance Scaling—Part II: Future Directions

    A. Khakifirooz;D.A. Antoniadis

  • Integrated circuits including finfet devices and methods for fabricating the same

    Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng

  • Finfet structures having silicon germanium and silicon fins

    Kangguo Cheng;Bruce B. Doris;Ali Khakifirooz;Alexander Reznicek

  • High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

    Q. Liu;M. Vinet;J. Gimbert;N. Loubet

  • Junction field effect transistor with an epitaxially grown gate structure

    Tak H. Ning;Kangguo Cheng;Ali Khakifirooz;Pranita Kerber

  • Semiconductor devices fabricated by doped material layer as dopant source

    Kangguo Cheng;Bruce B. Doris;Balasubramanian S. Haran;Ali Khakifirooz

  • Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

    Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz

  • Bulk finfet with punchthrough stopper region and method of fabrication

    Kangguo Cheng;Ali Khakifirooz;Shom Ponoth;Ragvahasimhan Sreenivasan

  • Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

    A. Ritenour;A. Khakifirooz;D. A. Antoniadis;R. Z. Lei

  • Nanowire transistor structures with merged source/drain regions using auxiliary pillars

    Pouya Hashemi;Ali Khakifirooz;Alexander Reznicek

  • Method and structure for forming a localized SOI finFET

    Kangguo Cheng;Ali Khakifirooz;Kern Rim;Ramachandra Divakaruni

Frequent Co-Authors

Kangguo Cheng
Kangguo Cheng IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Ruilong Xie
Ruilong Xie IBM (United States)
Stephen W. Bedell
Stephen W. Bedell IBM (United States)
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Tak H. Ning
Tak H. Ning IBM (United States)

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