World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
9743
World Ranking
2012
National Ranking
787

Ghavam G. Shahidi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ghavam G. Shahidi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 375 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ghavam G. Shahidi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ghavam G. Shahidi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2015 - Member of the National Academy of Engineering For contributions to silicon-on-insulator complementary metal-oxide semiconductor (CMOS) technology.
  • 2004 - IEEE Fellow For contributions to silicon-on-insulator technology products.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Transistor

His primary scientific interests are in Optoelectronics, Electrical engineering, Silicon on insulator, CMOS and Electronic engineering. His Optoelectronics research is multidisciplinary, incorporating perspectives in Layer and Field-effect transistor. His studies in Layer integrate themes in fields like Stress and Fin.

His Silicon on insulator study combines topics in areas such as Pass transistor logic, Epitaxy, Diffusion capacitance, Trench and Short-channel effect. His CMOS research focuses on subjects like Dram, which are linked to eDRAM, Embedded memory and IBM. Ghavam G. Shahidi has included themes like Standby power and Deposition in his Electronic engineering study.

His most cited work include:

  • CMOS scaling for high performance and low power-the next ten years (330 citations)
  • SOI technology for the GHz era (209 citations)
  • A new 'shift and ratio' method for MOSFET channel-length extraction (198 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Silicon on insulator, Layer, Electrical engineering and Electronic engineering. His Optoelectronics research integrates issues from Transistor and Substrate. His Silicon on insulator research is multidisciplinary, incorporating elements of Wafer, Trench and Electrostatic discharge.

His biological study spans a wide range of topics, including Solar cell and Photovoltaic system. He interconnects Silicide and Dielectric in the investigation of issues within Electronic engineering. His Semiconductor research incorporates themes from Semiconductor device and Insulator.

He most often published in these fields:

  • Optoelectronics (75.49%)
  • Silicon on insulator (34.22%)
  • Layer (29.85%)

What were the highlights of his more recent work (between 2013-2020)?

  • Optoelectronics (75.49%)
  • Layer (29.85%)
  • Transistor (14.81%)

In recent papers he was focusing on the following fields of study:

Ghavam G. Shahidi mainly investigates Optoelectronics, Layer, Transistor, Photovoltaic system and Substrate. His study on Doping, Semiconductor and Silicon on insulator is often connected to Conductivity as part of broader study in Optoelectronics. His Semiconductor research focuses on Semiconductor device and how it connects with Electrical engineering, Dielectric layer and Gate dielectric.

Many of his research projects under Layer are closely connected to Stack with Stack, tying the diverse disciplines of science together. The various areas that Ghavam G. Shahidi examines in his Transistor study include Thin film, Electronic circuit, Active matrix and Amplifier. His work deals with themes such as Semiconductor structure, Silicon, Germanium, CMOS and Gate stack, which intersect with Epitaxy.

Between 2013 and 2020, his most popular works were:

  • Method and Structure for Forming On-Chip High Quality Capacitors With ETSOI Transistors (37 citations)
  • Thin-film ambipolar logic (25 citations)
  • Contact for silicon heterojunction solar cells (22 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

His primary areas of investigation include Optoelectronics, Layer, Transistor, Doping and Electrical engineering. His study in Optoelectronics focuses on Semiconductor in particular. His Semiconductor study combines topics from a wide range of disciplines, such as Silicon on insulator, Mandrel and Insulator.

The Transistor study combines topics in areas such as Electronic circuit, Thin film, Nanotechnology, Lithography and Etching. His research in Doping intersects with topics in Photovoltaic system, Heterojunction and Band gap. His Electrical engineering study frequently intersects with other fields, such as Trimming.

Best Publications

  • CMOS scaling for high performance and low power-the next ten years

    B. Davari;R.H. Dennard;G.G. Shahidi

  • SOI technology for the GHz era

    G. G. Shahidi

  • A new 'shift and ratio' method for MOSFET channel-length extraction

    Y. Taur;D.S. Zicherman;D.R. Lombardi;P.J. Restle

  • Integrated circuit with a thin body field effect transistor and capacitor

    Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi

  • Two-device memory cell on SOI for merged logic and memory applications

    Fariborz Assaderaghi;Bijan Davari;Louis L. Hsu;Jack A. Mandelman

  • Silicon-on-insulator vertical array device trench capacitor DRAM

    Carl J. Radens;Gary B. Bronner;Tze-Chiang Chen;Bijan Davari

  • Patterned SOI regions on semiconductor chips

    Bijan Davari;Devendra Kumar Sadana;Ghavam G. Shahidi;Sandip Tiwari

  • Method for manufacturing ultra thin body field effect transistor (fet) and ultra-thin body fet device (ultra-thin body super-steep retrograde well (ssrw) fet device) manufactured by the same

    C Boyd Daine;Judson R Holt;Meikei Leong;Renee T Mo

  • Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers

    G.G. Shahidi;D.A. Antoniadis;H.I. Smith

  • Integration of dual workfunction metal gate CMOS devices

    Byoung H. Lee;Effendi Leobandung;Ghavam G. Shahidi

  • Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET

    C. Wann;F. Assaderaghi;R. Dennard;Chenming Hu

  • High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High- $\kappa$ Gate Dielectrics and $lpha$ -Si Passivation

    Y. Sun;E.W. Kiewra;J.P. de Souza;J.J. Bucchignano

  • Lock and Key Through-Via Method for Wafer Level 3D Integration and Structures Produced Thereby

    Sampath Purushothaman;Mary E. Rothwell;Ghavam Ghavami Shahidi;Roy RongQing Yu

  • Double SOI device with recess etch and epitaxy

    Fariborz Assaderaghi;Tze-Chiang Chen;K. Muller;Edward Nowak

  • Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation

    Kangguo Cheng;Bruce B. Doris;Pranita Kulkarni;Ghavam Shahidi

  • Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

    J. P. de Souza;E. Kiewra;Y. Sun;A. Callegari

  • Role of oxygen vacancies in V/sub FB//V/sub t/ stability of pFET metals on HfO/sub 2/

    E. Cartier;F.R. McFeely;V. Narayanan;P. Jamison

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors

    Stephen W. Bedell;Joel P. Desouza;Zhibin Ren;Alexander Reznicek

  • Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

    V. Narayanan;V.K. Paruchuri;N.A. Bojarczuk;B.P. Linder

  • A room temperature 0.1 /spl mu/m CMOS on SOI

    G.G. Shahidi;C.A. Anderson;B.A. Chappell;T.I. Chappell

Frequent Co-Authors

Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Stephen W. Bedell
Stephen W. Bedell IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Tak H. Ning
Tak H. Ning IBM (United States)
Dominic J. Schepis
Dominic J. Schepis Global Foundries

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