World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
9187
World Ranking
2122
National Ranking
834

Materials Science

D-Index
56
Citations
9370
World Ranking
8382
National Ranking
2058

Research.com Recognitions

  • 2020 - Fellow, National Academy of Inventors
  • 2014 - ACM Fellow For contributions to power estimation and optimization in the design of power-aware systems.

Overview

Vijay Narayanan is affiliated with IBM in the United States and conducts research primarily in the field of Engineering. Their work spans several subfields, including Electrical and Electronic Engineering, Materials Chemistry, and Artificial Intelligence, with additional contributions in Computer Vision and Pattern Recognition as well as Cognitive Neuroscience.

The research topics central to Narayanan's work include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor Materials and Devices
  • Phase-change Materials and Chalcogenides
  • Neural Networks and Reservoir Computing
  • Machine Learning in Materials Science
  • Advancements in Semiconductor Devices and Circuit Design

Their publication record features papers in various venues, with a focus on journals such as arXiv (Cornell University), IEEE Transactions on Electron Devices, ECS Meeting Abstracts, Nature Communications, and APL Machine Learning.

Selected recent papers authored or co-authored by Narayanan include:

  • A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference, 2023, Nature Electronics
  • An analog-AI chip for energy-efficient speech recognition and transcription, 2023, Nature
  • Hardware-aware training for large-scale and diverse deep learning inference workloads using in-memory computing-based accelerators, 2023, Nature Communications
  • HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs, 2022, IEEE Journal of Solid-State Circuits
  • A Heterogeneous and Programmable Compute-In-Memory Accelerator Architecture for Analog-AI Using Dense 2-D Mesh, 2022, IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Frequent collaborators in their research include Nicole Saulnier, Kevin Brew, Abu Sebastian, Malte J. Rasch, and Manuel Le Gallo.

Vijay Narayanan has received recognition for their contributions through awards such as:

  • Fellow, National Academy of Inventors, 2020
  • ACM Fellow, 2014, for contributions to power estimation and optimization in the design of power-aware systems

Best Publications

  • Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges

    E. P. Gusev;V. Narayanan;M. M. Frank

  • Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

    Catherine Dubourdieu;John Bruley;Thomas M. Arruda;Agham Posadas

  • A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

    S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral

  • Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

    Cyril Cabral;Alessandro C. Callegari;Michael A. Gribelyuk;Paul C. Jamison

  • Oxygen vacancies in high dielectric constant oxide-semiconductor films.

    Supratik Guha;Vijay Narayanan

  • Verfahren für metall-ersetzungs-gate eines high-performance-bauelements

    An L Steegen;Victor Ku;Kwong Hon Wong;Ying Li

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization

    C-H. Lin;B. Greene;S. Narasimha;J. Cai

  • High- $\kappa$ /Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

    M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie

  • Structures and techniques for atomic layer deposition

    Shintaro Aoyama;Robert D. Clark;Steven P. Consiglio;Marinus Hopstaken

  • Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition

    K. Lorenz;M. Gonsalves;Wook Kim;V. Narayanan

  • Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition

    V. Narayanan;K. Lorenz;Wook Kim;S. Mahajan

  • Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers

    S. Guha;S. Guha;V. K. Paruchuri;M. Copel;V. Narayanan

  • A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

    X. Chen;S. Samavedam;V. Narayanan;K. Stein

  • SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS

    Nestor A. Bojarczuk;Cyril Cabral;Eduard A. Cartier;Matthew W. Copel

  • Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for cmos

    Nestor A. Bojarczuk;Michael P. Chudzik;Matthew W. Copel;Supratik Guha

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Role of oxygen vacancies in V/sub FB//V/sub t/ stability of pFET metals on HfO/sub 2/

    E. Cartier;F.R. McFeely;V. Narayanan;P. Jamison

  • Fundamental aspects of HfO 2 -based high-k metal gate stack reliability and implications on t inv -scaling

    E. Cartier;A. Kerber;T. Ando;M. M. Frank

  • High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing

    M. Chudzik;B. Doris;R. Mo;J. Sleight

  • Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

    V. Narayanan;V.K. Paruchuri;N.A. Bojarczuk;B.P. Linder

  • Removal of charged defects from metal oxide-gate stacks

    Eduard A. Cartier;Matthew W. Copel;Supratik Guha;Richard A. Haight

Frequent Co-Authors

Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Martin M. Frank
Martin M. Frank IBM (United States)
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Supratik Guha
Supratik Guha Argonne National Laboratory
Matthew Copel
Matthew Copel IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
James H. Stathis
James H. Stathis IBM (United States)

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