World's Best Scientists 2026 revealed!
Vamsi K. Paruchuri

Vamsi K. Paruchuri

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6460
World Ranking
4880
National Ranking
1706

Vamsi K. Paruchuri publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Vamsi K. Paruchuri sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 222 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Vamsi K. Paruchuri D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Vamsi K. Paruchuri sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Vamsi K. Paruchuri is affiliated with IBM in the United States, contributing research primarily within the fields of Computer Science, Engineering, and Materials Science. Their body of work encompasses a variety of subfields, including Information Systems, Signal Processing, Computer Networks and Communications, Mechanical Engineering, and Materials Chemistry.

The scientist's research topics cover several advanced domains such as User Authentication and Security Systems, Biometric Identification and Security, Advanced Authentication Protocols Security, Metallurgical Processes and Thermodynamics, Solidification and Crystal Growth Phenomena, Aluminum Alloy Microstructure Properties, and Blockchain Technology Applications and Security.

Recent publication activity includes a paper titled "Phase field simulation of segregation and precipitates formation during steel solidification", published in 2023. This work appeared in the IOP Conference Series Materials Science and Engineering and has been cited twice. The study focuses on metallurgical processes relevant to understanding steel solidification patterns.

  • Sriram Bobba
  • Begoña Santillana
  • Ulrich Prahl
  • Ali Bakhshi

Vamsi K. Paruchuri has collaborated with frequent coauthors including Sriram Bobba, Begoña Santillana, Ulrich Prahl, and Ali Bakhshi. These partnerships reflect interdisciplinary efforts linking Computer Science and Engineering disciplines with applied materials research.

  • IOP Conference Series Materials Science and Engineering

The scientist's publications are concentrated in venues such as the IOP Conference Series Materials Science and Engineering, underscoring engagement with materials-oriented engineering research communities. Their work bridges computational techniques and practical applications in physical sciences and security systems.

Best Publications

  • Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet;T. Hook;P. Montanini;C.-W. Yeung

  • A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

    S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral

  • Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

    H. Kawasaki;V. S. Basker;T. Yamashita;C.-H. Lin

  • Hafnium oxide gate dielectrics on sulfur-passivated germanium

    Martin M. Frank;Steven J. Koester;Matthew Copel;John A. Ott

  • A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

    R. Xie;P. Montanini;K. Akarvardar;N. Tripathi

  • Random asynchronous wakeup protocol for sensor networks

    V. Paruchuri;S. Basavaraju;A. Durresi;R. Kannan

  • Optimized broadcast protocol for sensor networks

    A. Durresi;V.K. Paruchuri;S.S. Iyengar;R. Kannan

  • Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers

    S. Guha;S. Guha;V. K. Paruchuri;M. Copel;V. Narayanan

  • Securing powerline communications

    V. Paruchuri;A. Durresi;M. Ramesh

  • SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS

    Nestor A. Bojarczuk;Cyril Cabral;Eduard A. Cartier;Matthew W. Copel

  • Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for cmos

    Nestor A. Bojarczuk;Michael P. Chudzik;Matthew W. Copel;Supratik Guha

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Role of oxygen vacancies in V/sub FB//V/sub t/ stability of pFET metals on HfO/sub 2/

    E. Cartier;F.R. McFeely;V. Narayanan;P. Jamison

  • High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing

    M. Chudzik;B. Doris;R. Mo;J. Sleight

  • A 0.063 µm 2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

    V. S. Basker;T. Standaert;H. Kawasaki;C.-C. Yeh

  • Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

    V. Narayanan;V.K. Paruchuri;N.A. Bojarczuk;B.P. Linder

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • Fundamental understanding and optimization of PBTI in nFETs with SiO2/HfO2 gate stack

    E. Cartier;B. P. Linder;V. Narayanan;V. K. Paruchuri

  • A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

    K. I. Seo;B. Haran;D. Gupta;D. Guo

  • 22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell

    B.S. Haran;A. Kumar;L. Adam;J. Chang

Frequent Co-Authors

Vijay Narayanan
Vijay Narayanan IBM (United States)
Arjan Durresi
Arjan Durresi Indiana University – Purdue University Indianapolis
Bruce B. Doris
Bruce B. Doris IBM (United States)
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Leonard Barolli
Leonard Barolli Fukuoka Institute of Technology
Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Supratik Guha
Supratik Guha Argonne National Laboratory
Martin M. Frank
Martin M. Frank IBM (United States)
Matthew Copel
Matthew Copel IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)

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