World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
66
Citations
17529
World Ranking
5291
National Ranking
1385

Engineering and Technology

D-Index
66
Citations
17053
World Ranking
1405
National Ranking
463

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

The scientist’s investigation covers issues in Silicon, Optoelectronics, High-κ dielectric, Analytical chemistry and Gate dielectric. He has researched Silicon in several fields, including Impact ionization, Inorganic chemistry, Silicon oxide, Leakage and Mineralogy. His work focuses on many connections between Optoelectronics and other disciplines, such as Capacitance, that overlap with his field of interest in Nanotechnology and Logic gate.

His biological study spans a wide range of topics, including Threshold voltage, Metal gate and Electron mobility. His studies deal with areas such as Oxide, Thin film, Electric field, Passivation and Silicon dioxide as well as Analytical chemistry. His Gate dielectric research integrates issues from Annealing and Nitride.

His most cited work include:

  • Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering (621 citations)
  • Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon (617 citations)
  • MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS (478 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, High-κ dielectric, Dielectric, Electrical engineering and Gate dielectric. His Optoelectronics study combines topics from a wide range of disciplines, such as Layer, Metal gate, Gate oxide and Electronic engineering. Eduard A. Cartier works mostly in the field of High-κ dielectric, limiting it down to concerns involving MOSFET and, occasionally, Electron mobility.

His Dielectric research incorporates elements of Oxide, Silicon, Leakage, Analytical chemistry and Gate stack. His study looks at the intersection of Silicon and topics like Thin film with Molecular physics. His work in Gate dielectric covers topics such as Semiconductor device which are related to areas like Semiconductor.

He most often published in these fields:

  • Optoelectronics (53.25%)
  • High-κ dielectric (26.84%)
  • Dielectric (26.41%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (53.25%)
  • Logic gate (9.52%)
  • High-κ dielectric (26.84%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Logic gate, High-κ dielectric, Gate dielectric and Electrical engineering. His Optoelectronics research is multidisciplinary, incorporating elements of Layer, Metal gate, Electrode and Gate stack. His High-κ dielectric research focuses on subjects like CMOS, which are linked to Charge.

His Gate dielectric study combines topics in areas such as Electronic engineering and Gate oxide. His work carried out in the field of Electronic engineering brings together such families of science as Oxide and Germanium. The study incorporates disciplines such as Metal insulator metal capacitor, Dielectric and Leakage in addition to Oxide.

Between 2014 and 2021, his most popular works were:

  • High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment (21 citations)
  • Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High- $k$ -Metal-Gate CMOS Technologies (16 citations)
  • The Impact of Self-Heating on Charge Trapping in High- $k$ -Metal-Gate nFETs (16 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Eduard A. Cartier mostly deals with Optoelectronics, Logic gate, Electrical engineering, PMOS logic and High-κ dielectric. Much of his study explores Optoelectronics relationship to Nanotechnology. His study focuses on the intersection of Logic gate and fields such as Metal gate with connections in the field of Semiconductor device, Electronic engineering, Electrical resistivity and conductivity and Thin metal.

His study in the field of CMOS and Gate dielectric is also linked to topics like Scaling. His research in High-κ dielectric intersects with topics in Transistor, Voltage, Non-volatile memory and Computer data storage. His Silicon-germanium study is concerned with the field of Silicon as a whole.

Best Publications

  • Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

    Massimo V. Fischetti;Deborah A. Neumayer;Eduard A. Cartier

  • Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

    D. J. DiMaria;E. Cartier;D. Arnold

  • MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS

    D. J. DiMaria;E. Cartier

  • High-resolution depth profiling in ultrathin Al2O3 films on Si

    E. P. Gusev;M. Copel;E. Cartier;I. J. R. Baumvol

  • Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

    E.P Gusev;E Cartier;D.A Buchanan;M Gribelyuk

  • Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

    E. Cartier;J. H. Stathis;D. A. Buchanan

  • Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

    Unknown

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

    S. Guha;E. Cartier;M. A. Gribelyuk;N. A. Bojarczuk

  • Theory of high-field electron transport and impact ionization in silicon dioxide.

    D. Arnold;E. Cartier;D. J. DiMaria

  • Ultrathin high-K gate stacks for advanced CMOS devices

    E.P. Gusev;D.A. Buchanan;E. Cartier;A. Kumar

  • Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

    A. Callegari;E. Cartier;M. Gribelyuk;H. F. Okorn-Schmidt

  • Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks

    S. Zafar;A. Kumar;E. Gusev;E. Cartier

  • Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

    Catherine Dubourdieu;John Bruley;Thomas M. Arruda;Agham Posadas

  • Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

    M. Copel;E. Cartier;F. M. Ross

  • Anode hole injection and trapping in silicon dioxide

    D. J. DiMaria;E. Cartier;D. A. Buchanan

  • Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

    A. Kerber;E.A. Cartier

  • Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

    S. Bangsaruntip;A. Majumdar;G. M. Cohen;S. U. Engelmann

  • Impact ionization in silicon

    E. Cartier;M. V. Fischetti;E. A. Eklund;F. R. McFeely

  • Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface.

    J. H. Stathis;E. Cartier

  • Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

Frequent Co-Authors

Vijay Narayanan
Vijay Narayanan IBM (United States)
Martin M. Frank
Martin M. Frank IBM (United States)
James H. Stathis
James H. Stathis IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Matthew Copel
Matthew Copel IBM (United States)
Supratik Guha
Supratik Guha Argonne National Laboratory
Luigi Pantisano
Luigi Pantisano Intel (United States)
Evgeni Gusev
Evgeni Gusev Qualcomm (United States)

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