World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
66
Citations
17529
World Ranking
5289
National Ranking
1383

Engineering and Technology

D-Index
66
Citations
17053
World Ranking
1407
National Ranking
464

Eduard A. Cartier publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Eduard A. Cartier sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 292 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Eduard A. Cartier D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Eduard A. Cartier sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 66 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

The scientist’s investigation covers issues in Silicon, Optoelectronics, High-κ dielectric, Analytical chemistry and Gate dielectric. He has researched Silicon in several fields, including Impact ionization, Inorganic chemistry, Silicon oxide, Leakage and Mineralogy. His work focuses on many connections between Optoelectronics and other disciplines, such as Capacitance, that overlap with his field of interest in Nanotechnology and Logic gate.

His biological study spans a wide range of topics, including Threshold voltage, Metal gate and Electron mobility. His studies deal with areas such as Oxide, Thin film, Electric field, Passivation and Silicon dioxide as well as Analytical chemistry. His Gate dielectric research integrates issues from Annealing and Nitride.

His most cited work include:

  • Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering (621 citations)
  • Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon (617 citations)
  • MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS (478 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, High-κ dielectric, Dielectric, Electrical engineering and Gate dielectric. His Optoelectronics study combines topics from a wide range of disciplines, such as Layer, Metal gate, Gate oxide and Electronic engineering. Eduard A. Cartier works mostly in the field of High-κ dielectric, limiting it down to concerns involving MOSFET and, occasionally, Electron mobility.

His Dielectric research incorporates elements of Oxide, Silicon, Leakage, Analytical chemistry and Gate stack. His study looks at the intersection of Silicon and topics like Thin film with Molecular physics. His work in Gate dielectric covers topics such as Semiconductor device which are related to areas like Semiconductor.

He most often published in these fields:

  • Optoelectronics (53.25%)
  • High-κ dielectric (26.84%)
  • Dielectric (26.41%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (53.25%)
  • Logic gate (9.52%)
  • High-κ dielectric (26.84%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Logic gate, High-κ dielectric, Gate dielectric and Electrical engineering. His Optoelectronics research is multidisciplinary, incorporating elements of Layer, Metal gate, Electrode and Gate stack. His High-κ dielectric research focuses on subjects like CMOS, which are linked to Charge.

His Gate dielectric study combines topics in areas such as Electronic engineering and Gate oxide. His work carried out in the field of Electronic engineering brings together such families of science as Oxide and Germanium. The study incorporates disciplines such as Metal insulator metal capacitor, Dielectric and Leakage in addition to Oxide.

Between 2014 and 2021, his most popular works were:

  • High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment (21 citations)
  • Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High- $k$ -Metal-Gate CMOS Technologies (16 citations)
  • The Impact of Self-Heating on Charge Trapping in High- $k$ -Metal-Gate nFETs (16 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Eduard A. Cartier mostly deals with Optoelectronics, Logic gate, Electrical engineering, PMOS logic and High-κ dielectric. Much of his study explores Optoelectronics relationship to Nanotechnology. His study focuses on the intersection of Logic gate and fields such as Metal gate with connections in the field of Semiconductor device, Electronic engineering, Electrical resistivity and conductivity and Thin metal.

His study in the field of CMOS and Gate dielectric is also linked to topics like Scaling. His research in High-κ dielectric intersects with topics in Transistor, Voltage, Non-volatile memory and Computer data storage. His Silicon-germanium study is concerned with the field of Silicon as a whole.

Best Publications

  • Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

    Massimo V. Fischetti;Deborah A. Neumayer;Eduard A. Cartier

  • Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

    D. J. DiMaria;E. Cartier;D. Arnold

  • MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS

    D. J. DiMaria;E. Cartier

  • High-resolution depth profiling in ultrathin Al2O3 films on Si

    E. P. Gusev;M. Copel;E. Cartier;I. J. R. Baumvol

  • Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

    E.P Gusev;E Cartier;D.A Buchanan;M Gribelyuk

  • Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

    E. Cartier;J. H. Stathis;D. A. Buchanan

  • Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

    Unknown

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

    S. Guha;E. Cartier;M. A. Gribelyuk;N. A. Bojarczuk

  • Theory of high-field electron transport and impact ionization in silicon dioxide.

    D. Arnold;E. Cartier;D. J. DiMaria

  • Ultrathin high-K gate stacks for advanced CMOS devices

    E.P. Gusev;D.A. Buchanan;E. Cartier;A. Kumar

  • Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

    A. Callegari;E. Cartier;M. Gribelyuk;H. F. Okorn-Schmidt

  • Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks

    S. Zafar;A. Kumar;E. Gusev;E. Cartier

  • Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

    Catherine Dubourdieu;John Bruley;Thomas M. Arruda;Agham Posadas

  • Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

    M. Copel;E. Cartier;F. M. Ross

  • Anode hole injection and trapping in silicon dioxide

    D. J. DiMaria;E. Cartier;D. A. Buchanan

  • Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

    A. Kerber;E.A. Cartier

  • Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

    S. Bangsaruntip;A. Majumdar;G. M. Cohen;S. U. Engelmann

  • Impact ionization in silicon

    E. Cartier;M. V. Fischetti;E. A. Eklund;F. R. McFeely

  • Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface.

    J. H. Stathis;E. Cartier

  • Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

Frequent Co-Authors

Vijay Narayanan
Vijay Narayanan IBM (United States)
Martin M. Frank
Martin M. Frank IBM (United States)
James H. Stathis
James H. Stathis IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Matthew Copel
Matthew Copel IBM (United States)
Supratik Guha
Supratik Guha Argonne National Laboratory
Luigi Pantisano
Luigi Pantisano Intel (United States)
Evgeni Gusev
Evgeni Gusev Qualcomm (United States)

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