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Tibor Grasser

Tibor Grasser

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Electronics and Electrical Engineering
Austria
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17677
World Ranking
1139
National Ranking
1

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Austria Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Austria Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Austria Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Austria Leader Award

Overview

Tibor Grasser is affiliated with TU Wien in Austria and has an extensive publication record across fields related to engineering and materials science. Their research primarily focuses on semiconductor materials and devices, with particular attention to advancements in semiconductor devices and circuit design.

The main fields of study for Grasser's work include:

  • Engineering
  • Materials Science

More specifically, their subfields of study encompass:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials

Grasser's research covers a variety of key topics such as:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • 2D Materials and Applications
  • Silicon Carbide Semiconductor Technologies
  • Graphene research and applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices

Their frequent collaborators include Michael Waltl, Theresia Knobloch, Dominic Waldhoer, Yu. Yu. Illarionov, and Bernhard Stampfer.

Grasser has published numerous papers in well-known venues, with significant contributions appearing in:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Microelectronics Reliability
  • Materials Science Forum
  • Nature Electronics

Recent notable papers authored or co-authored by Tibor Grasser include:

  • Transistors based on two-dimensional materials for future integrated circuits (2021, Nature Electronics)
  • Insulators for 2D nanoelectronics: the gap to bridge (2020, Nature Communications)
  • The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021, Nature Electronics)
  • Hybrid 2D-CMOS microchips for memristive applications (2023, Nature)
  • Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning (2022, Nature Electronics)

Best Publications

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

    Tibor Grasser

  • The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • Insulators for 2D nanoelectronics: the gap to bridge.

    Yury Yu. Illarionov;Theresia Knobloch;Markus Jech;Mario Lanza

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • A review of hydrodynamic and energy-transport models for semiconductor device simulation

    T. Grasser;Ting-Wei Tang;H. Kosina;S. Selberherr

  • The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

    T. Grasser;H. Reisinger;P.-J. Wagner;F. Schanovsky

  • The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

    Theresia Knobloch;Yury Yu. Illarionov;Yury Yu. Illarionov;Fabian Ducry;Christian Schleich

  • Ubiquitous relaxation in BTI stressing—New evaluation and insights

    B. Kaczer;T. Grasser;P.J. Roussel;J. Martin-Martinez

  • Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

    Yury Yu. Illarionov;Alexander G. Banshchikov;Dmitry K. Polyushkin;Stefan Wachter

  • The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

    Hans Reisinger;Tibor Grasser;Wolfgang Gustin;Christian Schlunder

  • The role of charge trapping in MoS 2 /SiO 2 and MoS 2 /hBN field-effect transistors

    Yury Yu Illarionov;Gerhard Rzepa;Michael Waltl;Theresia Knobloch

  • Analytic modeling of the bias temperature instability using capture/emission time maps

    T. Grasser;P.-J. Wagner;H. Reisinger;Th. Aichinger

  • The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

    T. Grasser;W. Gos;V. Sverdlov;B. Kaczer

  • Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

    Yury Yuryevich Illarionov;Michael Waltl;Gerhard Rzepa;Joon Seok Kim

  • Comphy — A compact-physics framework for unified modeling of BTI

    Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  • Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

    K. Puschkarsky;T. Grasser;T. Aichinger;W. Gustin

  • Bias Temperature Instability for Devices and Circuits

    Tibor Grasser

  • Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

    Tibor Grasser;Hans Reisinger;Paul-Jürgen Wagner;Ben Kaczer

  • Atomistic approach to variability of bias-temperature instability in circuit simulations

    B. Kaczer;S. Mahato;V. Valduga de Almeida Camargo;M. Toledano-Luque

  • Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

    T. Grasser;B. Kaczer;P. Hehenberger;W. Gos

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