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Tibor Grasser

Tibor Grasser

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Electronics and Electrical Engineering
Austria
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17677
World Ranking
1139
National Ranking
1

Tibor Grasser publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tibor Grasser sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 669 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tibor Grasser D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tibor Grasser sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Austria Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Austria Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Austria Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Austria Leader Award

Overview

Tibor Grasser is affiliated with TU Wien in Austria and has an extensive publication record across fields related to engineering and materials science. Their research primarily focuses on semiconductor materials and devices, with particular attention to advancements in semiconductor devices and circuit design.

The main fields of study for Grasser's work include:

  • Engineering
  • Materials Science

More specifically, their subfields of study encompass:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials

Grasser's research covers a variety of key topics such as:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • 2D Materials and Applications
  • Silicon Carbide Semiconductor Technologies
  • Graphene research and applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices

Their frequent collaborators include Michael Waltl, Theresia Knobloch, Dominic Waldhoer, Yu. Yu. Illarionov, and Bernhard Stampfer.

Grasser has published numerous papers in well-known venues, with significant contributions appearing in:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Microelectronics Reliability
  • Materials Science Forum
  • Nature Electronics

Recent notable papers authored or co-authored by Tibor Grasser include:

  • Transistors based on two-dimensional materials for future integrated circuits (2021, Nature Electronics)
  • Insulators for 2D nanoelectronics: the gap to bridge (2020, Nature Communications)
  • The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021, Nature Electronics)
  • Hybrid 2D-CMOS microchips for memristive applications (2023, Nature)
  • Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning (2022, Nature Electronics)

Best Publications

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

    Tibor Grasser

  • The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • Insulators for 2D nanoelectronics: the gap to bridge.

    Yury Yu. Illarionov;Theresia Knobloch;Markus Jech;Mario Lanza

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • A review of hydrodynamic and energy-transport models for semiconductor device simulation

    T. Grasser;Ting-Wei Tang;H. Kosina;S. Selberherr

  • The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

    T. Grasser;H. Reisinger;P.-J. Wagner;F. Schanovsky

  • The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

    Theresia Knobloch;Yury Yu. Illarionov;Yury Yu. Illarionov;Fabian Ducry;Christian Schleich

  • Ubiquitous relaxation in BTI stressing—New evaluation and insights

    B. Kaczer;T. Grasser;P.J. Roussel;J. Martin-Martinez

  • Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

    Yury Yu. Illarionov;Alexander G. Banshchikov;Dmitry K. Polyushkin;Stefan Wachter

  • The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

    Hans Reisinger;Tibor Grasser;Wolfgang Gustin;Christian Schlunder

  • The role of charge trapping in MoS 2 /SiO 2 and MoS 2 /hBN field-effect transistors

    Yury Yu Illarionov;Gerhard Rzepa;Michael Waltl;Theresia Knobloch

  • Analytic modeling of the bias temperature instability using capture/emission time maps

    T. Grasser;P.-J. Wagner;H. Reisinger;Th. Aichinger

  • The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

    T. Grasser;W. Gos;V. Sverdlov;B. Kaczer

  • Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

    Yury Yuryevich Illarionov;Michael Waltl;Gerhard Rzepa;Joon Seok Kim

  • Comphy — A compact-physics framework for unified modeling of BTI

    Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  • Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

    K. Puschkarsky;T. Grasser;T. Aichinger;W. Gustin

  • Bias Temperature Instability for Devices and Circuits

    Tibor Grasser

  • Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

    Tibor Grasser;Hans Reisinger;Paul-Jürgen Wagner;Ben Kaczer

  • Atomistic approach to variability of bias-temperature instability in circuit simulations

    B. Kaczer;S. Mahato;V. Valduga de Almeida Camargo;M. Toledano-Luque

  • Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

    T. Grasser;B. Kaczer;P. Hehenberger;W. Gos

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