World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
13292
World Ranking
2055
National Ranking
349

Overview

Ru Huang is affiliated with Peking University in China and specializes in the field of Engineering with a focus on Electrical and Electronic Engineering. Their research spans several subfields, including Cellular and Molecular Neuroscience, Artificial Intelligence, Materials Chemistry, and Biomedical Engineering.

The main topics of Ru Huang's research include advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, advancements in semiconductor devices and circuit design, neuroscience and neural engineering, integrated circuits and semiconductor failure analysis, as well as neural networks and reservoir computing.

Ru Huang has contributed numerous publications in well-known venues, with frequent publications in the following journals and platforms:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Science China Information Sciences
  • IEEE Transactions on Circuits and Systems I Regular Papers

Their recent papers include:

  • "A comprehensive review on emerging artificial neuromorphic devices," 2020, Applied Physics Reviews
  • "An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing," 2022, Nature Electronics
  • "Brain-inspired computing with memristors: Challenges in devices, circuits, and systems," 2020, Applied Physics Reviews
  • "Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks," 2020, Nature Communications
  • "A native oxide high-κ gate dielectric for two-dimensional electronics," 2020, Nature Electronics

Throughout their career, Ru Huang has collaborated extensively with several frequent coauthors, including:

  • Runsheng Wang
  • Yuchao Yang
  • Yimao Cai
  • Zongwei Wang
  • Qianqian Huang

Best Publications

  • A comprehensive review on emerging artificial neuromorphic devices

    Jiadi Zhu;Teng Zhang;Yuchao Yang;Ru Huang

  • Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics.

    Jiadi Zhu;Yuchao Yang;Rundong Jia;Zhongxin Liang

  • Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing

    Zongwei Wang;Minghui Yin;Teng Zhang;Yimao Cai

  • Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

    Yang Zhang;Yang Zhang;Zhongrui Wang;Jiadi Zhu;Yuchao Yang

  • Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks

    Qingxi Duan;Zhaokun Jing;Xiaolong Zou;Yanghao Wang

  • A native oxide high-κ gate dielectric for two-dimensional electronics

    Tianran Li;Teng Tu;Yuanwei Sun;Huixia Fu

  • Probing memristive switching in nanoionic devices

    Yuchao Yang;Ru Huang

  • Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

    Jiewen Fan;Ming Li;Xiaoyan Xu;Yuancheng Yang

  • A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

    Yingxin Qiu;Runsheng Wang;Qianqian Huang;Ru Huang

  • A Flat Lens with Tunable Phase Gradient by Using Random Access Reconfigurable Metamaterial

    Weiming Zhu;Qinghua Song;Libin Yan;Wu Zhang

  • A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

    Qianqian Huang;Ru Huang;Zhan Zhan;Yingxin Qiu

  • A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application

    Dake Wu;Ru Huang;Waisum Wong;Yangyuan Wang

  • Nonlinearity in Memristors for Neuromorphic Dynamic Systems

    Ke Yang;J. Joshua Yang;Ru Huang;Yuchao Yang

  • Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device

    Xue Yang;Yichen Fang;Zhizhen Yu;Zongwei Wang

  • Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

    Muxi Yu;Yimao Cai;Zongwei Wang;Yichen Fang

  • Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

    Runsheng Wang;Jing Zhuge;Ru Huang;Yu Tian

  • Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

    Jing Zhuge;Runsheng Wang;Ru Huang;Yu Tian

  • The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems

    Le Ye;Zhixuan Wang;Ying Liu;Peiyu Chen

  • An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs

    Chunlei Wu;Ru Huang;Qianqian Huang;Chao Wang

  • Dual-Gated MoS2 Neuristor for Neuromorphic Computing

    Lin Bao;Jiadi Zhu;Zhizhen Yu;Rundong Jia

  • Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps

    Le Ye;Congyin Shi;Huailin Liao;Ru Huang

Frequent Co-Authors

Yangyuan Wang
Yangyuan Wang Peking University
Yuchao Yang
Yuchao Yang Peking University
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Dong-Won Kim
Dong-Won Kim Hanyang University
Chuan Wang
Chuan Wang Washington University in St. Louis
Zujin Shi
Zujin Shi Peking University
Asen Asenov
Asen Asenov University of Glasgow
Zhennan Gu
Zhennan Gu Peking University
Yan Li
Yan Li Peking University
Lunhui Guan
Lunhui Guan Chinese Academy of Sciences

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