His scientific interests lie mostly in Optoelectronics, CMOS, Electronic engineering, Silicon and MOSFET. His Optoelectronics research incorporates elements of Transistor, Voltage, Semiconductor device and Nanotechnology. CMOS is a subfield of Electrical engineering that Ru Huang investigates.
The various areas that Ru Huang examines in his Electronic engineering study include Surface finish, Operational amplifier, Skin effect, Equivalent circuit and Nanoelectronics. The Silicon study combines topics in areas such as Substrate, Gate dielectric and Quantum tunnelling. His studies in MOSFET integrate themes in fields like Parasitic capacitance, Capacitance, Parasitic element, Silicon on insulator and Infrasound.
Ru Huang mainly focuses on Optoelectronics, Electronic engineering, Electrical engineering, CMOS and Transistor. The concepts of his Optoelectronics study are interwoven with issues in Field-effect transistor, Layer and MOSFET. His Electronic engineering study incorporates themes from Noise and Reliability.
Ru Huang interconnects Electronic circuit, Doping and Integrated circuit in the investigation of issues within CMOS. The study incorporates disciplines such as Communication channel and Quantum tunnelling in addition to Transistor. His Silicon study combines topics in areas such as Nanowire, Nanotechnology and Annealing.
Ru Huang mainly investigates Optoelectronics, Electronic engineering, Neuromorphic engineering, Resistive random-access memory and Artificial neural network. His study in the field of Silicon is also linked to topics like Degradation. In his work, Circuit design is strongly intertwined with Electronic circuit, which is a subfield of Electronic engineering.
His work deals with themes such as Computer architecture and Memristor, which intersect with Neuromorphic engineering. His work carried out in the field of Resistive random-access memory brings together such families of science as Tin and Resistive touchscreen. His Transistor research incorporates themes from Electron mobility and Indium tin oxide.
His primary areas of investigation include Optoelectronics, Memristor, Electronic engineering, Artificial neural network and Circuit design. His Optoelectronics research includes themes of Field-effect transistor and Resistive random-access memory, Voltage. His study in Memristor is interdisciplinary in nature, drawing from both Neuromorphic engineering, Adder, Nanotechnology and Arithmetic.
His Electronic engineering study combines topics from a wide range of disciplines, such as Characterization, Transistor, Resistive switching and High spatial resolution. His biological study spans a wide range of topics, including Electronic circuit and Statistical physics. His study looks at the intersection of Electronic circuit and topics like Reliability with Statistical static timing analysis and CMOS.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A comprehensive review on emerging artificial neuromorphic devices
Jiadi Zhu;Teng Zhang;Yuchao Yang;Ru Huang.
Applied physics reviews (2020)
A comprehensive review on emerging artificial neuromorphic devices
Jiadi Zhu;Teng Zhang;Yuchao Yang;Ru Huang.
Applied physics reviews (2020)
A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application
Dake Wu;Ru Huang;Waisum Wong;Yangyuan Wang.
IEEE Microwave and Wireless Components Letters (2007)
A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application
Dake Wu;Ru Huang;Waisum Wong;Yangyuan Wang.
IEEE Microwave and Wireless Components Letters (2007)
Probing memristive switching in nanoionic devices
Yuchao Yang;Ru Huang.
Nature Electronics (2018)
Probing memristive switching in nanoionic devices
Yuchao Yang;Ru Huang.
Nature Electronics (2018)
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
Yang Zhang;Yang Zhang;Zhongrui Wang;Jiadi Zhu;Yuchao Yang.
Applied physics reviews (2020)
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
Yang Zhang;Yang Zhang;Zhongrui Wang;Jiadi Zhu;Yuchao Yang.
Applied physics reviews (2020)
Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors
Jiewen Fan;Ming Li;Xiaoyan Xu;Yuancheng Yang.
IEEE Transactions on Electron Devices (2015)
Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors
Jiewen Fan;Ming Li;Xiaoyan Xu;Yuancheng Yang.
IEEE Transactions on Electron Devices (2015)
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