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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
7773
World Ranking
4080
National Ranking
70

Overview

Enrique Miranda is affiliated with the Autonomous University of Barcelona in Spain. Their research primarily spans the fields of engineering and neuroscience, with a strong emphasis on electrical and electronic engineering. They have contributed extensively to the study of advanced memory and neural computing, ferroelectric and negative capacitance devices, and neuroscience and neural engineering.

The scientist's work covers several significant subfields, including:

  • Electrical and Electronic Engineering
  • Cellular and Molecular Neuroscience
  • Cognitive Neuroscience
  • Statistical and Nonlinear Physics
  • Artificial Intelligence

Primary research topics investigated by Enrique Miranda include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • Neural dynamics and brain function
  • Advancements in Semiconductor Devices and Circuit Design
  • Stochastic dynamics and bifurcation

Their recent publications feature works that reflect a focus on memristor technology, resistive switching, and quantum conductance in memristive devices. Notable papers include:

  • "Hardware implementation of memristor-based artificial neural networks" (2024) published in Nature Communications
  • "Standards for the Characterization of Endurance in Resistive Switching Devices" (2021) published in ACS Nano
  • "Variability in Resistive Memories" (2023) published in Advanced Intelligent Systems
  • "Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications" (2022) published in Advanced Materials
  • "On the Thermal Models for Resistive Random Access Memory Circuit Simulation" (2021) published in Nanomaterials

Enrique Miranda has contributed to book publications as well, including a book published by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

Frequent collaborators in their research include:

  • J. Suñé
  • F. Campabadal
  • Mireia Bargalló González
  • Fernando Aguirre
  • E. Salvador

Key publication venues where Enrique Miranda has frequently published their work include:

  • Solid-State Electronics
  • IEEE Electron Device Letters
  • IEEE Transactions on Nanotechnology
  • SSRN Electronic Journal
  • Zenodo (CERN European Organization for Nuclear Research)

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices

    C. Walczyk;D. Walczyk;T. Schroeder;T. Bertaud

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

    Enrique A Miranda;Christian Walczyk;Christian Wenger;Thomas Schroeder

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

    Adnan Mehonic;Alexander L. Shluger;David Gao;Ilia Valov

  • Quantum-size effects in hafnium-oxide resistive switching

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Xavier Cartoixà

  • Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

    Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley

  • Erratum: Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

    David Jimenez;Enrique Miranda;Andrés Godoy

  • Electron transport through broken down ultra-thin SiO2 layers in MOS devices

    Enrique Miranda;Enrique Miranda;Jordi Suñé

  • Cycle-to-Cycle Intrinsic RESET Statistics in ${ m HfO}_{2}$ -Based Unipolar RRAM Devices

    Shibing Long;Xiaojuan Lian;Tianchun Ye;Carlo Cagli

  • A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Luca Perniola

  • Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/ films

    E. Miranda;J. Sune

  • Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

    David Jimenez;Enrique Miranda;Andres Godoy

  • Post soft breakdown conduction in SiO/sub 2/ gate oxides

    J. Sune;E. Miranda

  • Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms

    J. Sune;G. Mura;E. Miranda

  • A function-fit model for the soft breakdown failure mode

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Point contact conduction at the oxide breakdown of MOS devices

    J. Sune;E. Miranda;M. Nafria;X. Aymerich

Frequent Co-Authors

Shibing Long
Shibing Long University of Science and Technology of China
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Ming Liu
Ming Liu Fudan University
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Mario Lanza
Mario Lanza National University of Singapore
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Ilia Valov
Ilia Valov RWTH Aachen University
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia

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