His primary areas of study are Thermal conduction, Condensed matter physics, Optoelectronics, Resistive random-access memory and Voltage. His Thermal conduction research is multidisciplinary, incorporating elements of Radius, Failure mode and effects analysis, Dielectric strength and Resistive touchscreen, Electrical engineering. The study incorporates disciplines such as Electron, Electrical resistivity and conductivity and Time-dependent gate oxide breakdown in addition to Condensed matter physics.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor and Energy level. His biological study spans a wide range of topics, including Memristor, Distribution, Statistics, Non-volatile memory and Reset. His work deals with themes such as Weibull distribution, Monte Carlo method and Dielectric, which intersect with Voltage.
His main research concerns Optoelectronics, Thermal conduction, Condensed matter physics, Voltage and Resistive random-access memory. His work in Optoelectronics addresses subjects such as Nanotechnology, which are connected to disciplines such as Protein filament. Enrique Miranda combines subjects such as Electrode, Dielectric strength, Electrical conductor, Electrical engineering and Electronic engineering with his study of Thermal conduction.
His studies deal with areas such as Electron and Capacitor as well as Condensed matter physics. The Voltage study combines topics in areas such as Reset and Work. His Resistive random-access memory research is multidisciplinary, incorporating perspectives in Statistics, Memristor, Resistive touchscreen and Reliability.
Enrique Miranda mainly focuses on Resistive random-access memory, Optoelectronics, Memristor, Voltage and Neuromorphic engineering. His Resistive random-access memory research incorporates themes from Electrical conductor, Resistive touchscreen and Logic gate. The concepts of his Optoelectronics study are interwoven with issues in Thermal conduction, Voltage drop and Electrode.
His Thermal conduction research includes elements of Equivalent circuit, Condensed matter physics and Nanotechnology. His Memristor study combines topics from a wide range of disciplines, such as Spice, Electronic circuit, Silicon oxide and Non-volatile memory. His Voltage study incorporates themes from Reset, Stress, Work and Amplitude.
His scientific interests lie mostly in Resistive random-access memory, Optoelectronics, Voltage, Electronics and Electronic engineering. The various areas that Enrique Miranda examines in his Resistive random-access memory study include Thermal conduction, CMOS, Resistive touchscreen, Electrical conductor and Reliability. His Thermal conduction study integrates concerns from other disciplines, such as Shadow mask, Mesoscopic physics and Nanotechnology, Graphene.
His Optoelectronics research includes themes of Electrical reactance, Equivalent series inductance, Capacitance, LCR meter and Equivalent circuit. Enrique Miranda combines subjects such as Thermal conductivity, Composite material, Thermal and Dissipation with his study of Voltage. His Electronics study integrates concerns from other disciplines, such as Resistive switching and Crystallite.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices
C. Walczyk;D. Walczyk;T. Schroeder;T. Bertaud.
IEEE Transactions on Electron Devices (2011)
Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui.
Advanced Functional Materials (2017)
Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
Enrique A Miranda;Christian Walczyk;Christian Wenger;Thomas Schroeder.
IEEE Electron Device Letters (2010)
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
M. Lanza;G. Bersuker;M. Porti;E. Miranda.
Applied Physics Letters (2012)
Quantum-size effects in hafnium-oxide resistive switching
Shibing Long;Xiaojuan Lian;Carlo Cagli;Xavier Cartoixà.
Applied Physics Letters (2013)
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley.
Scientific Reports (2013)
Electron transport through broken down ultra-thin SiO2 layers in MOS devices
Enrique Miranda;Enrique Miranda;Jordi Suñé.
Microelectronics Reliability (2004)
A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown
Shibing Long;Xiaojuan Lian;Carlo Cagli;Luca Perniola.
IEEE Electron Device Letters (2013)
Erratum: Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
David Jimenez;Enrique Miranda;Andrés Godoy.
IEEE Transactions on Electron Devices (2010)
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