World's Best Scientists 2026 revealed!
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Enrique Miranda

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 42 4080 3917 70 69 314 7773

Enrique Miranda publications per year

The chart shows the history of publications by Enrique Miranda between 1993 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Enrique Miranda published across 34 years, from 1993 to 2026, averaging 14.7 papers a year. Output peaked at 37 publications in 2013. 22 of the 500 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1993 to 2026. Vertical axis: number of publications, 0 to 37. Peak 37 publications in 2013. 1993: 2 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 2 publications 1998: 7 publications 1999: 10 publications 2000: 10 publications 2001: 9 publications 2002: 4 publications 2003: 9 publications 2004: 9 publications 2005: 16 publications 2006: 7 publications 2007: 19 publications 2008: 16 publications 2009: 18 publications 2010: 19 publications 2011: 29 publications 2012: 22 publications 2013: 37 publications 2014: 18 publications 2015: 36 publications 2016: 10 publications 2017: 30 publications 2018: 21 publications 2019: 15 publications 2020: 20 publications 2021: 23 publications 2022: 20 publications 2023: 22 publications 2024: 18 publications 2025: 19 publications 2026: 3 publications
1993 2026

500 publications in total across all disciplines

View publications per year as a table
Enrique Miranda: publications per year, 1993 to 2026
Year Publications
1993 2
1994 0
1995 0
1996 0
1997 2
1998 7
1999 10
2000 10
2001 9
2002 4
2003 9
2004 9
2005 16
2006 7
2007 19
2008 16
2009 18
2010 19
2011 29
2012 22
2013 37
2014 18
2015 36
2016 10
2017 30
2018 21
2019 15
2020 20
2021 23
2022 20
2023 22
2024 18
2025 19
2026 3
Total 500
Download as CSV

Enrique Miranda publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Enrique Miranda sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 314–333 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 314 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276 314
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Enrique Miranda D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Enrique Miranda sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 42 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194 42
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Enrique Miranda is affiliated with the Autonomous University of Barcelona in Spain. Their research primarily spans the fields of engineering and neuroscience, with a strong emphasis on electrical and electronic engineering. They have contributed extensively to the study of advanced memory and neural computing, ferroelectric and negative capacitance devices, and neuroscience and neural engineering.

The scientist's work covers several significant subfields, including:

  • Electrical and Electronic Engineering
  • Cellular and Molecular Neuroscience
  • Cognitive Neuroscience
  • Statistical and Nonlinear Physics
  • Artificial Intelligence

Primary research topics investigated by Enrique Miranda include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • Neural dynamics and brain function
  • Advancements in Semiconductor Devices and Circuit Design
  • Stochastic dynamics and bifurcation

Their recent publications feature works that reflect a focus on memristor technology, resistive switching, and quantum conductance in memristive devices. Notable papers include:

  • "Hardware implementation of memristor-based artificial neural networks" (2024) published in Nature Communications
  • "Standards for the Characterization of Endurance in Resistive Switching Devices" (2021) published in ACS Nano
  • "Variability in Resistive Memories" (2023) published in Advanced Intelligent Systems
  • "Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications" (2022) published in Advanced Materials
  • "On the Thermal Models for Resistive Random Access Memory Circuit Simulation" (2021) published in Nanomaterials

Enrique Miranda has contributed to book publications as well, including a book published by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

Frequent collaborators in their research include:

  • J. Suñé
  • F. Campabadal
  • Mireia Bargalló González
  • Fernando Aguirre
  • E. Salvador

Key publication venues where Enrique Miranda has frequently published their work include:

  • Solid-State Electronics
  • IEEE Electron Device Letters
  • IEEE Transactions on Nanotechnology
  • SSRN Electronic Journal
  • Zenodo (CERN European Organization for Nuclear Research)

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices

    C. Walczyk;D. Walczyk;T. Schroeder;T. Bertaud

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

    Enrique A Miranda;Christian Walczyk;Christian Wenger;Thomas Schroeder

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

    Adnan Mehonic;Alexander L. Shluger;David Gao;Ilia Valov

  • Quantum-size effects in hafnium-oxide resistive switching

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Xavier Cartoixà

  • Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

    Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley

  • Erratum: Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

    David Jimenez;Enrique Miranda;Andrés Godoy

  • Electron transport through broken down ultra-thin SiO2 layers in MOS devices

    Enrique Miranda;Enrique Miranda;Jordi Suñé

  • Cycle-to-Cycle Intrinsic RESET Statistics in ${ m HfO}_{2}$ -Based Unipolar RRAM Devices

    Shibing Long;Xiaojuan Lian;Tianchun Ye;Carlo Cagli

  • A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Luca Perniola

  • Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/ films

    E. Miranda;J. Sune

  • Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

    David Jimenez;Enrique Miranda;Andres Godoy

  • Post soft breakdown conduction in SiO/sub 2/ gate oxides

    J. Sune;E. Miranda

  • Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms

    J. Sune;G. Mura;E. Miranda

  • A function-fit model for the soft breakdown failure mode

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • Point contact conduction at the oxide breakdown of MOS devices

    J. Sune;E. Miranda;M. Nafria;X. Aymerich

Frequent Co-Authors

Jordi Suñé
Jordi Suñé Autonomous University of Barcelona
Shibing Long
Shibing Long University of Science and Technology of China
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Ming Liu
Ming Liu Fudan University
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Mario Lanza
Mario Lanza National University of Singapore
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Anthony J. Kenyon
Anthony J. Kenyon University College London
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design

External Links

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Best Scientists Citing Enrique Miranda

Ting-Chang Chang

Ting-Chang Chang

National Sun Yat-sen University

Publications: 58

Mario Lanza

Mario Lanza

National University of Singapore

Publications: 49

Montserrat Nafría

Montserrat Nafría

Autonomous University of Barcelona

Publications: 47

Kuan-Chang Chang

Kuan-Chang Chang

Peking University

Publications: 41

Tsung-Ming Tsai

Tsung-Ming Tsai

National Sun Yat-sen University

Publications: 40

Alessandro Paccagnella

Alessandro Paccagnella

University of Padua

Publications: 38

Jordi Suñé

Jordi Suñé

Autonomous University of Barcelona

Publications: 38

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 38

Ming Liu

Ming Liu

Fudan University

Publications: 37

Sungjun Kim

Sungjun Kim

Dongguk University

Publications: 34

Ernest Y. Wu

Ernest Y. Wu

IBM (United States)

Publications: 32

Luca Larcher

Luca Larcher

University of Modena and Reggio Emilia

Publications: 32

Hangbing Lv

Hangbing Lv

Chinese Academy of Sciences

Publications: 28

Rainer Waser

Rainer Waser

RWTH Aachen University

Publications: 26

Kin Leong Pey

Kin Leong Pey

Singapore University of Technology and Design

Publications: 23

Su-Ting Han

Su-Ting Han

Shenzhen University

Publications: 23

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