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D-Index & Metrics

Materials Science

D-Index
56
Citations
12588
World Ranking
8200
National Ranking
471

Ilia Valov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ilia Valov sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 183 publications — 25th percentile

25% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ilia Valov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ilia Valov sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Ilia Valov is affiliated with RWTH Aachen University in Germany and conducts research primarily in the fields of engineering and neuroscience. Their work spans across electrical and electronic engineering as well as cellular and molecular neuroscience, with additional contributions in polymers and plastics, cognitive neuroscience, and materials chemistry.

The scientist's research focuses on advanced memory and neural computing, ferroelectric and negative capacitance devices, neuroscience and neural engineering, neural dynamics and brain function, transition metal oxide nanomaterials, semiconductor materials and devices, and electrochemical analysis and applications.

Frequent co-authors collaborating with Ilia Valov include Gianluca Milano, Carlo Ricciardi, Matteo Fretto, Luca Boarino, and Shaochuan Chen. These partnerships highlight interdisciplinary engagements across materials science and neural engineering.

Their publications are commonly found in journals such as Zenodo (CERN European Organization for Nuclear Research), Advanced Materials, Advanced Intelligent Systems, Nature Nanotechnology, and ACS Applied Materials & Interfaces.

Recent notable papers by Ilia Valov include:

  • Embedded Devices for Neuromorphic Time-Series Assessment (2022, Maryland Shared Open Access Repository - USMAI Consortium)
  • Standards for the Characterization of Endurance in Resistive Switching Devices (2021, ACS Nano)
  • Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems (2023, ACS Nano)
  • Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges (2023, Advanced Materials)
  • Brain-Inspired Structural Plasticity through Reweighting and Rewiring in Multi-Terminal Self-Organizing Memristive Nanowire Networks (2020, Advanced Intelligent Systems)

Best Publications

  • Electrochemical metallization memories—fundamentals, applications, prospects

    Ilia Valov;Rainer Waser;Rainer Waser;John R Jameson;Michael N Kozicki

  • Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

    Yuchao Yang;Peng Gao;Peng Gao;Linze Li;Xiaoqing Pan

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Nanoscale cation motion in TaO x , HfO x and TiO x memristive systems

    Anja Wedig;Michael Luebben;Deok Yong Cho;Marco Moors

  • Nanobatteries in redox-based resistive switches require extension of memristor theory

    I. Valov;E. Linn;S. Tappertzhofen;S. Schmelzer

  • Erratum: Electrochemical metallization memories - Fundamentals, applications, prospects (Nanotechnology (2011) 22 (254003))

    Ilia Valov;Rainer Waser;John R. Jameson;Michael Kozicki

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Multibit memory operation of metal-oxide bi-layer memristors

    Spyridon Stathopoulos;Ali Khiat;Maria Trapatseli;Simone Cortese

  • Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

    Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Ilia Valov;Ilia Valov

  • Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

    Stefan Tappertzhofen;Ilia Valov;Tohru Tsuruoka;Tsuyoshi Hasegawa

  • Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

    Ilia Valov;Ina Sapezanskaia;Alpana Nayak;Tohru Tsuruoka

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Switching kinetics of electrochemical metallization memory cells

    Stephan Menzel;Stefan Tappertzhofen;Rainer Waser;Rainer Waser;Ilia Valov

  • Cation-based resistance change memory

    Ilia Valov;Michael N Kozicki

  • Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

    Ilia Valov

  • A chemically driven insulator-metal transition in non-stoichiometric and amorphous gallium oxide.

    Lakshmi Nagarajan;Roger A. De Souza;Dominik Samuelis;Ilia Valov

  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

    Adnan Mehonic;Alexander L. Shluger;David Gao;Ilia Valov

  • Quantum conductance and switching kinetics of AgI-based microcrossbar cells

    S Tappertzhofen;I Valov;I Valov;R Waser;R Waser

  • Effects of moisture and redox reactions in VCM and ECM resistive switching memories

    Ilia Valov;Tohru Tsuruoka

  • Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

    Tohru Tsuruoka;Ilia Valov;Ilia Valov;Stefan Tappertzhofen;Jan van den Hurk

  • Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.

    Michael Lübben;Panagiotis Karakolis;Vassilios Ioannou-Sougleridis;Pascal Normand

Frequent Co-Authors

Rainer Waser
Rainer Waser RWTH Aachen University
Stephan Menzel
Stephan Menzel Forschungszentrum Jülich
Tsuyoshi Hasegawa
Tsuyoshi Hasegawa Waseda University
Tohru Tsuruoka
Tohru Tsuruoka National Institute for Materials Science
Jürgen Janek
Jürgen Janek University of Giessen
Masakazu Aono
Masakazu Aono National Institute for Materials Science
Regina Dittmann
Regina Dittmann Forschungszentrum Jülich
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Manfred Martin
Manfred Martin RWTH Aachen University
Michael N. Kozicki
Michael N. Kozicki Arizona State University

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