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Materials Science

D-Index
56
Citations
12588
World Ranking
8202
National Ranking
472

Overview

Ilia Valov is affiliated with RWTH Aachen University in Germany and conducts research primarily in the fields of engineering and neuroscience. Their work spans across electrical and electronic engineering as well as cellular and molecular neuroscience, with additional contributions in polymers and plastics, cognitive neuroscience, and materials chemistry.

The scientist's research focuses on advanced memory and neural computing, ferroelectric and negative capacitance devices, neuroscience and neural engineering, neural dynamics and brain function, transition metal oxide nanomaterials, semiconductor materials and devices, and electrochemical analysis and applications.

Frequent co-authors collaborating with Ilia Valov include Gianluca Milano, Carlo Ricciardi, Matteo Fretto, Luca Boarino, and Shaochuan Chen. These partnerships highlight interdisciplinary engagements across materials science and neural engineering.

Their publications are commonly found in journals such as Zenodo (CERN European Organization for Nuclear Research), Advanced Materials, Advanced Intelligent Systems, Nature Nanotechnology, and ACS Applied Materials & Interfaces.

Recent notable papers by Ilia Valov include:

  • Embedded Devices for Neuromorphic Time-Series Assessment (2022, Maryland Shared Open Access Repository - USMAI Consortium)
  • Standards for the Characterization of Endurance in Resistive Switching Devices (2021, ACS Nano)
  • Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems (2023, ACS Nano)
  • Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges (2023, Advanced Materials)
  • Brain-Inspired Structural Plasticity through Reweighting and Rewiring in Multi-Terminal Self-Organizing Memristive Nanowire Networks (2020, Advanced Intelligent Systems)

Best Publications

  • Electrochemical metallization memories—fundamentals, applications, prospects

    Ilia Valov;Rainer Waser;Rainer Waser;John R Jameson;Michael N Kozicki

  • Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

    Yuchao Yang;Peng Gao;Peng Gao;Linze Li;Xiaoqing Pan

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Nanoscale cation motion in TaO x , HfO x and TiO x memristive systems

    Anja Wedig;Michael Luebben;Deok Yong Cho;Marco Moors

  • Nanobatteries in redox-based resistive switches require extension of memristor theory

    I. Valov;E. Linn;S. Tappertzhofen;S. Schmelzer

  • Erratum: Electrochemical metallization memories - Fundamentals, applications, prospects (Nanotechnology (2011) 22 (254003))

    Ilia Valov;Rainer Waser;John R. Jameson;Michael Kozicki

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Multibit memory operation of metal-oxide bi-layer memristors

    Spyridon Stathopoulos;Ali Khiat;Maria Trapatseli;Simone Cortese

  • Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

    Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Ilia Valov;Ilia Valov

  • Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

    Stefan Tappertzhofen;Ilia Valov;Tohru Tsuruoka;Tsuyoshi Hasegawa

  • Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

    Ilia Valov;Ina Sapezanskaia;Alpana Nayak;Tohru Tsuruoka

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Switching kinetics of electrochemical metallization memory cells

    Stephan Menzel;Stefan Tappertzhofen;Rainer Waser;Rainer Waser;Ilia Valov

  • Cation-based resistance change memory

    Ilia Valov;Michael N Kozicki

  • Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

    Ilia Valov

  • A chemically driven insulator-metal transition in non-stoichiometric and amorphous gallium oxide.

    Lakshmi Nagarajan;Roger A. De Souza;Dominik Samuelis;Ilia Valov

  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

    Adnan Mehonic;Alexander L. Shluger;David Gao;Ilia Valov

  • Quantum conductance and switching kinetics of AgI-based microcrossbar cells

    S Tappertzhofen;I Valov;I Valov;R Waser;R Waser

  • Effects of moisture and redox reactions in VCM and ECM resistive switching memories

    Ilia Valov;Tohru Tsuruoka

  • Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

    Tohru Tsuruoka;Ilia Valov;Ilia Valov;Stefan Tappertzhofen;Jan van den Hurk

  • Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.

    Michael Lübben;Panagiotis Karakolis;Vassilios Ioannou-Sougleridis;Pascal Normand

Frequent Co-Authors

Rainer Waser
Rainer Waser RWTH Aachen University
Stephan Menzel
Stephan Menzel Forschungszentrum Jülich
Tsuyoshi Hasegawa
Tsuyoshi Hasegawa Waseda University
Tohru Tsuruoka
Tohru Tsuruoka National Institute for Materials Science
Jürgen Janek
Jürgen Janek University of Giessen
Masakazu Aono
Masakazu Aono National Institute for Materials Science
Regina Dittmann
Regina Dittmann Forschungszentrum Jülich
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Manfred Martin
Manfred Martin RWTH Aachen University
Michael N. Kozicki
Michael N. Kozicki Arizona State University

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