World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
10945
World Ranking
10426
National Ranking
168

Engineering and Technology

D-Index
49
Citations
11151
World Ranking
4246
National Ranking
51

Overview

Mario Lanza is affiliated with King Abdullah University of Science and Technology in Saudi Arabia. Their research focuses primarily on engineering and materials science, with notable contributions in electrical and electronic engineering and materials chemistry.

The scientist's work spans several subfields, including cellular and molecular neuroscience, artificial intelligence, and atomic and molecular physics and optics.

Mario Lanza's research covers a range of topics emphasizing advanced memory and neural computing, ferroelectric and negative capacitance devices, neuroscience and neural engineering, and 2D materials and applications. Additional topics include semiconductor materials and devices, graphene research and applications, and MXene and MAX phase materials.

Frequent collaborative partners in their work include Kaichen Zhu, R Todi, Paul R. Berger, C Bulucea, and John M. Dallesasse.

Mario Lanza has published extensively in several scientific venues where they have multiple publications. These venues include IEEE Transactions on Electron Devices, Advanced Materials, Nature Communications, Advanced Electronic Materials, and arXiv (Cornell University).

Among recent papers, the following works stand out:

  • Memristive technologies for data storage, computation, encryption, and radio-frequency communication (2022) published in Science
  • Embedded Devices for Neuromorphic Time-Series Assessment (2022) published in Maryland Shared Open Access Repository (USMAI Consortium)
  • Insulators for 2D nanoelectronics: the gap to bridge (2020) published in Nature Communications
  • Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks (2020) published in Nature Electronics
  • The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021) published in Nature Electronics

Best Publications

  • High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation

    Michael J. Kenney;Ming Gong;Yanguang Li;Justin Z. Wu

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Electronic synapses made of layered two-dimensional materials

    Yuanyuan Shi;Yuanyuan Shi;Xianhu Liang;Bin Yuan;Victoria Chen

  • Insulators for 2D nanoelectronics: the gap to bridge.

    Yury Yu. Illarionov;Theresia Knobloch;Markus Jech;Mario Lanza

  • Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

    Shaochuan Chen;Shaochuan Chen;Mohammad Reza Mahmoodi;Yuanyuan Shi;Chandreswar Mahata

  • The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

    Theresia Knobloch;Yury Yu. Illarionov;Yury Yu. Illarionov;Fabian Ducry;Christian Schleich

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • The development of integrated circuits based on two-dimensional materials

    Kaichen Zhu;Kaichen Zhu;Chao Wen;Areej A. Aljarb;Fei Xue

  • A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope.

    Mario Lanza

  • A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics

    Felix Palumbo;Chao Wen;Salvatore Lombardo;Sebastian Pazos

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Graphene and Related Materials for Resistive Random Access Memories

    Fei Hui;Enric Grustan-Gutierrez;Shibing Long;Qi Liu

  • Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

    M. Lanza;G. Bersuker;M. Porti;E. Miranda

  • 28.2%-efficient, outdoor-stable perovskite/silicon tandem solar cell

    Jiang Liu;Erkan Aydin;Jun Yin;Michele De Bastiani

  • A Review on Principles and Applications of Scanning Thermal Microscopy (SThM)

    Yun Zhang;Wenkai Zhu;Fei Hui;Mario Lanza

  • Luminescent mononuclear and dinuclear iridium(III) cyclometalated complexes immobilized in a polymeric matrix as solid-state oxygen sensors

    Gaetano Di Marco;Maurizio Lanza;Antonino Mamo;Ivan Stefio

  • Growth of Two-Dimensional Materials at the Wafer Scale.

    Xiangming Xu;Tianchao Guo;Hyunho Kim;Mrinal K Hota

  • Grain boundary mediated leakage current in polycrystalline HfO2 films

    K. McKenna;A. Shluger;V. Iglesias;M. Porti

  • On the use of two dimensional hexagonal boron nitride as dielectric

    Fei Hui;Chengbin Pan;Yuanyuan Shi;Yanfeng Ji

  • Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles.

    Yuanyuan Shi;Yanfeng Ji;Hui Sun;Fei Hui

  • Temperature and frequency dependencies of the complex dielectric constant of poly(ethylene oxide) under hydrostatic pressure

    C. Fanggao;G. A. Saunders;E. F. Lambson;R. N. Hampton

  • Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Yanfeng Ji;Chengbin Pan;Meiyun Zhang;Shibing Long

Frequent Co-Authors

Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Huiling Duan
Huiling Duan Peking University
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Paul C. McIntyre
Paul C. McIntyre Stanford University
Xiaoming Xie
Xiaoming Xie Chinese Academy of Sciences
Ilia Valov
Ilia Valov RWTH Aachen University
Eric Pop
Eric Pop Stanford University

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