World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
36
Citations
3757
World Ranking
8828
National Ranking
2451

Writam Banerjee publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Writam Banerjee sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 90 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Writam Banerjee D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Writam Banerjee sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 36 D-Index — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Writam Banerjee is affiliated with GlobalFoundries in the United States and specializes in engineering with a focus on electrical and electronic engineering. Their research contributions cover 36 publications in this main field, alongside work in materials chemistry, hardware and architecture, and polymers and plastics. The scientist's research topics concentrate on advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, electronic and structural properties of oxides, 2D materials and applications, physical unclonable functions (PUFs) and hardware security, as well as perovskite materials and applications.

The most notable publication venues for Banerjee's work include Advanced Electronic Materials, Small, Applied Physics Letters, Electronics, and the Journal of Applied Physics. They have published extensively in Advanced Electronic Materials (five publications) and have additional publications in Small (two publications), Applied Physics Letters (two publications), Electronics, and Journal of Applied Physics.

Key recent papers authored by Writam Banerjee include:

  • Challenges and Applications of Emerging Nonvolatile Memory Devices, 2020, Electronics
  • Hafnium Oxide (HfO2) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories, 2022, Small
  • Engineering of defects in resistive random access memory devices, 2020, Journal of Applied Physics

Frequent collaborators in their research include Hyunsang Hwang, Revannath Dnyandeo Nikam, Seong Hun Kim, Donghwa Lee, and Seungwoo Lee.

The focus of Banerjee's research lies in memory technologies and device engineering, particularly exploring the physics and applications of resistive random access memory (RRAM) and ferroelectric memories. Their work also addresses hardware security aspects and the development of neural computing components.

Best Publications

  • Hafnium Oxide (HfO2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories.

    Unknown

  • Challenges and Applications of Emerging Nonvolatile Memory Devices

    Writam Banerjee

  • Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

    Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu

  • Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.

    Xiaolong Zhao;Xiaolong Zhao;Xiaolong Zhao;Sen Liu;Sen Liu;Jiebin Niu;Jiebin Niu;Lei Liao

  • Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

    Hangbing Lv;Xiaoxin Xu;Hongtao Liu;Ruoyu Liu

  • Nanocrystals for silicon-based light-emitting and memory devices

    S K Ray;S Maikap;W Banerjee;S Das

  • Various Threshold Switching Devices for Integrate and Fire Neuron Applications

    Donguk Lee;Myonghoon Kwak;Kibong Moon;Wooseok Choi

  • Transparent and flexible resistive switching memory devices with a very?high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    Narendar Gogurla;Suvra P Mondal;Suvra P Mondal;Arun K Sinha;Ajit K Katiyar

  • Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity.

    Revannath Dnyandeo Nikam;Myonghoon Kwak;Jongwon Lee;Krishn Gopal Rajput

  • Full imitation of synaptic metaplasticity based on memristor devices

    Quantan Wu;Quantan Wu;Hong Wang;Qing Luo;Qing Luo;Writam Banerjee;Writam Banerjee

  • Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

    Qing Luo;Qing Luo;Xiaoxin Xu;Xiaoxin Xu;Hongtao Liu;Hongtao Liu;Hangbing Lv;Hangbing Lv

  • Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices.

    Writam Banerjee;Writam Banerjee;Qi Liu;Qi Liu;Hangbing Lv;Hangbing Lv;Shibing Long;Shibing Long

  • Atomic View of Filament Growth in Electrochemical Memristive Elements

    Hangbing Lv;Xiaoxin Xu;Pengxiao Sun;Hongtao Liu

  • Engineering of defects in resistive random access memory devices

    Writam Banerjee;Qi Liu;Hyunsang Hwang

  • Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

    Quantan Wu;Quantan Wu;Writam Banerjee;Writam Banerjee;Jingchen Cao;Jingchen Cao;Zhuoyu Ji;Zhuoyu Ji

  • Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

    Qing Luo;Xiaoxin Xu;Hongtao Liu;Hangbing Lv

  • Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

    Writam Banerjee;Hyunsang Hwang

  • Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010)

    Qing Luo;Xiaoxin Xu;Hongtao Liu;Hangbing Lv

  • Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

    Writam Banerjee;Writam Banerjee;Xumeng Zhang;Xumeng Zhang;Qing Luo;Qing Luo;Hangbing Lv;Hangbing Lv

  • Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material

    Writam Banerjee;Xiaoxin Xu;Xiaoxin Xu;Hangbing Lv;Hangbing Lv;Qi Liu;Qi Liu

  • Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

    Writam Banerjee;Siddheswar Maikap;Chao-Sung Lai;Yi-Yan Chen

Frequent Co-Authors

Ming Liu
Ming Liu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Shibing Long
Shibing Long University of Science and Technology of China
Ling Li
Ling Li Chinese Academy of Sciences
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Jer-Ren Yang
Jer-Ren Yang National Taiwan University
Hongtao Liu
Hongtao Liu Central South University
Samit K. Ray
Samit K. Ray Indian Institute of Technology Kharagpur
Chao-Sung Lai
Chao-Sung Lai National Yang Ming Chiao Tung University
Sangmin Lee
Sangmin Lee Chung-Ang University

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