World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
5103
World Ranking
5366
National Ranking
778

Overview

Ling Li is affiliated with the Chinese Academy of Sciences in China, focusing on engineering research with a concentration in electrical and electronic engineering.

Their published work covers various subfields including materials chemistry, biomedical engineering, polymers and plastics, as well as atomic and molecular physics and optics.

Li's research topics include thin-film transistor technologies, semiconductor materials and devices, advanced memory and neural computing, advancements in battery materials, conducting polymers and applications, organic electronics and photovoltaics, and advancements in semiconductor devices and circuit design.

Frequent coauthors collaborating with Li include Di Geng, Guanhua Yang, Nianduan Lu, Congyan Lu, and Ming Liu.

Li has contributed extensively to several publication venues with the highest number of papers appearing in IEEE Transactions on Electron Devices, followed by IEEE Electron Device Letters, IEEE Journal of the Electron Devices Society, Advanced Materials, and SSRN Electronic Journal.

Selected recent papers authored or coauthored by Ling Li include:

  • "Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking" (2022), IEEE Transactions on Electron Devices
  • "Thin-film transistors for large-area electronics" (2023), Nature Electronics
  • "Simultaneous Low-Order Phase Suppression and Defect Passivation for Efficient and Stable Blue Light-Emitting Diodes" (2020), ACS Energy Letters
  • "Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation" (2020), Nano Letters
  • "Sulfur-Carbon Electrode with PEO-LiFSI-PVDF Composite Coating for High-Rate and Long-Life Lithium-Sulfur Batteries" (2023), Advanced Energy Materials

Best Publications

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Current Status and Opportunities of Organic Thin-Film Transistor Technologies

    Xiaojun Guo;Yong Xu;Simon Ogier;Tse Nga Ng

  • The 2021 flexible and printed electronics roadmap

    Yvan Bonnassieux;Christoph J. Brabec;Yong Cao;Tricia Breen Carmichael

  • Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions

    Quantan Wu;Quantan Wu;Jiawei Wang;Jiawei Wang;Jingchen Cao;Jingchen Cao;Congyan Lu;Congyan Lu

  • Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F<sup>2</sup> by Monolithic Stacking

    Unknown

  • Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

    Hangbing Lv;Xiaoxin Xu;Hongtao Liu;Ruoyu Liu

  • Thermal crosstalk in 3-dimensional RRAM crossbar array

    Pengxiao Sun;Pengxiao Sun;Nianduan Lu;Ling Li;Yingtao Li

  • Sub-thermionic, ultra-high-gain organic transistors and circuits

    Zhongzhong Luo;Boyu Peng;Junpeng Zeng;Zhihao Yu;Zhihao Yu

  • Thermoelectric Seebeck effect in oxide-based resistive switching memory

    Ming Wang;Chong Bi;Ling Li;Shibing Long

  • Full imitation of synaptic metaplasticity based on memristor devices

    Quantan Wu;Quantan Wu;Hong Wang;Qing Luo;Qing Luo;Writam Banerjee;Writam Banerjee

  • A review of carrier thermoelectric-transport theory in organic semiconductors

    Nianduan Lu;Nianduan Lu;Ling Li;Ling Li;Ming Liu;Ming Liu

  • Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

    Qing Luo;Qing Luo;Xiaoxin Xu;Xiaoxin Xu;Hongtao Liu;Hongtao Liu;Hangbing Lv;Hangbing Lv

  • Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation.

    Quantan Wu;Bingjie Dang;Bingjie Dang;Congyan Lu;Guangwei Xu

  • Atomic View of Filament Growth in Electrochemical Memristive Elements

    Hangbing Lv;Xiaoxin Xu;Pengxiao Sun;Hongtao Liu

  • Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

    Quantan Wu;Quantan Wu;Writam Banerjee;Writam Banerjee;Jingchen Cao;Jingchen Cao;Zhuoyu Ji;Zhuoyu Ji

  • Charge Transfer within the F4TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application

    Jiawei Wang;Zhuoyu Ji;Guanhua Yang;Xichen Chuai

  • Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

    Qing Luo;Xiaoxin Xu;Hongtao Liu;Hangbing Lv

  • General Einstein relation model in disordered organic semiconductors under quasiequilibrium

    Ling Li;Nianduan Lu;Ming Liu;Heinz Bässler

  • Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

    Hangbing Lv;Yingtao Li;Qi Liu;Shibing Long

  • Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010)

    Qing Luo;Xiaoxin Xu;Hongtao Liu;Hangbing Lv

  • Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors

    Nianduan Lu;Ling Li;Ming Liu

Frequent Co-Authors

Ming Liu
Ming Liu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Shibing Long
Shibing Long University of Science and Technology of China
Hongtao Liu
Hongtao Liu Central South University
Jin Jang
Jin Jang Kyung Hee University
Yeliang Wang
Yeliang Wang Chinese Academy of Sciences
Heinz Bässler
Heinz Bässler Philipp University of Marburg
Wojciech Pisula
Wojciech Pisula Max Planck Society

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By considering these related degrees and career pathways, Electronics and Electrical Engineering students can broaden their expertise and increase their marketability in a competitive job market.

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