World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
5103
World Ranking
5366
National Ranking
779

Ling Li publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ling Li sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 217 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ling Li D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ling Li sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ling Li is affiliated with the Chinese Academy of Sciences in China, focusing on engineering research with a concentration in electrical and electronic engineering.

Their published work covers various subfields including materials chemistry, biomedical engineering, polymers and plastics, as well as atomic and molecular physics and optics.

Li's research topics include thin-film transistor technologies, semiconductor materials and devices, advanced memory and neural computing, advancements in battery materials, conducting polymers and applications, organic electronics and photovoltaics, and advancements in semiconductor devices and circuit design.

Frequent coauthors collaborating with Li include Di Geng, Guanhua Yang, Nianduan Lu, Congyan Lu, and Ming Liu.

Li has contributed extensively to several publication venues with the highest number of papers appearing in IEEE Transactions on Electron Devices, followed by IEEE Electron Device Letters, IEEE Journal of the Electron Devices Society, Advanced Materials, and SSRN Electronic Journal.

Selected recent papers authored or coauthored by Ling Li include:

  • "Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking" (2022), IEEE Transactions on Electron Devices
  • "Thin-film transistors for large-area electronics" (2023), Nature Electronics
  • "Simultaneous Low-Order Phase Suppression and Defect Passivation for Efficient and Stable Blue Light-Emitting Diodes" (2020), ACS Energy Letters
  • "Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation" (2020), Nano Letters
  • "Sulfur-Carbon Electrode with PEO-LiFSI-PVDF Composite Coating for High-Rate and Long-Life Lithium-Sulfur Batteries" (2023), Advanced Energy Materials

Best Publications

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Current Status and Opportunities of Organic Thin-Film Transistor Technologies

    Xiaojun Guo;Yong Xu;Simon Ogier;Tse Nga Ng

  • The 2021 flexible and printed electronics roadmap

    Yvan Bonnassieux;Christoph J. Brabec;Yong Cao;Tricia Breen Carmichael

  • Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions

    Quantan Wu;Quantan Wu;Jiawei Wang;Jiawei Wang;Jingchen Cao;Jingchen Cao;Congyan Lu;Congyan Lu

  • Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F<sup>2</sup> by Monolithic Stacking

    Unknown

  • Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

    Hangbing Lv;Xiaoxin Xu;Hongtao Liu;Ruoyu Liu

  • Thermal crosstalk in 3-dimensional RRAM crossbar array

    Pengxiao Sun;Pengxiao Sun;Nianduan Lu;Ling Li;Yingtao Li

  • Sub-thermionic, ultra-high-gain organic transistors and circuits

    Zhongzhong Luo;Boyu Peng;Junpeng Zeng;Zhihao Yu;Zhihao Yu

  • Thermoelectric Seebeck effect in oxide-based resistive switching memory

    Ming Wang;Chong Bi;Ling Li;Shibing Long

  • Full imitation of synaptic metaplasticity based on memristor devices

    Quantan Wu;Quantan Wu;Hong Wang;Qing Luo;Qing Luo;Writam Banerjee;Writam Banerjee

  • A review of carrier thermoelectric-transport theory in organic semiconductors

    Nianduan Lu;Nianduan Lu;Ling Li;Ling Li;Ming Liu;Ming Liu

  • Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

    Qing Luo;Qing Luo;Xiaoxin Xu;Xiaoxin Xu;Hongtao Liu;Hongtao Liu;Hangbing Lv;Hangbing Lv

  • Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation.

    Quantan Wu;Bingjie Dang;Bingjie Dang;Congyan Lu;Guangwei Xu

  • Atomic View of Filament Growth in Electrochemical Memristive Elements

    Hangbing Lv;Xiaoxin Xu;Pengxiao Sun;Hongtao Liu

  • Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

    Quantan Wu;Quantan Wu;Writam Banerjee;Writam Banerjee;Jingchen Cao;Jingchen Cao;Zhuoyu Ji;Zhuoyu Ji

  • Charge Transfer within the F4TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application

    Jiawei Wang;Zhuoyu Ji;Guanhua Yang;Xichen Chuai

  • Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

    Qing Luo;Xiaoxin Xu;Hongtao Liu;Hangbing Lv

  • General Einstein relation model in disordered organic semiconductors under quasiequilibrium

    Ling Li;Nianduan Lu;Ming Liu;Heinz Bässler

  • Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

    Hangbing Lv;Yingtao Li;Qi Liu;Shibing Long

  • Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010)

    Qing Luo;Xiaoxin Xu;Hongtao Liu;Hangbing Lv

  • Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors

    Nianduan Lu;Ling Li;Ming Liu

Frequent Co-Authors

Ming Liu
Ming Liu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Shibing Long
Shibing Long University of Science and Technology of China
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Jin Jang
Jin Jang Kyung Hee University
Hongtao Liu
Hongtao Liu Central South University
Yeliang Wang
Yeliang Wang Chinese Academy of Sciences
Heinz Bässler
Heinz Bässler Philipp University of Marburg

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Related Online Degrees & Career Pathways

Studying Electronics and Electrical Engineering in the USA opens doors to various career paths, including roles suited for different personality types. For instance, many high-paying jobs for introverts exist within this field, allowing professionals to leverage their analytical skills in environments that suit their work style. Exploring these roles can help align career goals with personal strengths.

For those interested in management, pursuing an online project management bachelor degree offers a strategic advantage. This path equips students with vital leadership skills to oversee engineering projects effectively, ensuring timely and cost-efficient completion. Accelerated online degree programs provide flexible options for working professionals aiming to enhance their qualifications without pausing their careers.

Additionally, best accelerated project management degree programs online help students fast-track their education, making it easier to transition into or advance within the engineering sector. These programs focus on practical skills that complement the technical knowledge gained through core engineering studies.

By considering these related degrees and career pathways, Electronics and Electrical Engineering students can broaden their expertise and increase their marketability in a competitive job market.

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