World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
82
Citations
25654
World Ranking
462
National Ranking
73

Materials Science

D-Index
83
Citations
26255
World Ranking
2351
National Ranking
747

Ming Liu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ming Liu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 777 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ming Liu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ming Liu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 82 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - Fellow, The World Academy of Sciences

Overview

Ming Liu is affiliated with the Chinese Academy of Sciences in China. Their research primarily focuses on engineering, with significant contributions in electrical and electronic engineering, materials chemistry, artificial intelligence, cellular and molecular neuroscience, and cognitive neuroscience.

Their work covers a range of topics, including:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • Thin-Film Transistor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Neural Networks and Reservoir Computing

Ming Liu has collaborated frequently with coauthors such as Qi Liu, Xumeng Zhang, Ling Li, Qing Luo, and Xiaoxin Xu.

The scientist has published extensively in venues including Nature Communications, IEEE Transactions on Electron Devices, IEEE Journal of Solid-State Circuits, the 2021 IEEE International Electron Devices Meeting (IEDM), and arXiv (Cornell University).

Recent publications by Ming Liu include:

  • Two-dimensional materials for next-generation computing technologies, 2020, Nature Nanotechnology
  • Memristive technologies for data storage, computation, encryption, and radio-frequency communication, 2022, Science
  • An artificial spiking afferent nerve based on Mott memristors for neurorobotics, 2020, Nature Communications
  • A highly CMOS compatible hafnia-based ferroelectric diode, 2020, Nature Communications
  • Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging, 2021, Nature Communications

Ming Liu has also contributed to book publications, including a work published by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" in 2021.

Among their recognitions, Ming Liu was named a Fellow of The World Academy of Sciences in 2019.

Best Publications

  • Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

    Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu

  • Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

    Qi Liu;Jun Sun;Hangbing Lv;Shibing Long

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

    Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang

  • Strategies to achieve high performance piezoelectric nanogenerators

    Dengwei Hu;Minggang Yao;Yong Fan;Chunrui Ma

  • Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

    Weihua Guan;Shibing Long;Qi Liu;Ming Liu

  • Resistive switching memory effect of ZrO2 films with Zr+ implanted

    Qi Liu;Weihua Guan;Shibing Long;Rui Jia

  • An Artificial Neuron Based on a Threshold Switching Memristor

    Xumeng Zhang;Wei Wang;Qi Liu;Xiaolong Zhao

  • Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Yan Wang;Qi Liu;Shibing Long;Wei Wang

  • An artificial spiking afferent nerve based on Mott memristors for neurorobotics.

    Xumeng Zhang;Ye Zhuo;Qing Luo;Zuheng Wu

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering.

    Zixiong Sun;Chunrui Ma;Ming Liu;Jin Cui

  • Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions

    Qi Liu;Shibing Long;Wei Wang;Qingyun Zuo

  • On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

    Weihua Guan;Ming Liu;Shibing Long;Qi Liu

  • A highly CMOS compatible hafnia-based ferroelectric diode.

    Qing Luo;Yan Cheng;Jianguo Yang;Rongrong Cao

  • An Overview of the Ultrawide Bandgap Ga 2 O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

    HuiWen Xue;HuiWen Xue;QiMing He;GuangZhong Jian;ShiBing Long

  • Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

    Weihua Guan;Shibing Long;Rui Jia;Ming Liu

  • Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

    Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu

  • Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

    Xiaolong Zhao;Xiaolong Zhao;Jun Ma;Xiangheng Xiao;Qi Liu;Qi Liu

  • Light-Gated Memristor with Integrated Logic and Memory Functions

    Hongwei Tan;Gang Liu;Huali Yang;Xiaohui Yi

  • Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

    Yuan Qin;Liheng Li;Xiaolong Zhao;Gary S. Tompa

Frequent Co-Authors

Shibing Long
Shibing Long University of Science and Technology of China
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Zuo-Guang Ye
Zuo-Guang Ye Simon Fraser University
Nian X. Sun
Nian X. Sun Northeastern University
Wei Ren
Wei Ren Shaanxi Normal University
Wei Ren
Wei Ren Xi'an Jiaotong University
Ling Li
Ling Li Chinese Academy of Sciences
Chun-Lin Jia
Chun-Lin Jia Xi'an Jiaotong University
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Jing Liu
Jing Liu Chinese Academy of Sciences

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