World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
82
Citations
25654
World Ranking
462
National Ranking
72

Materials Science

D-Index
83
Citations
26255
World Ranking
2353
National Ranking
746

Research.com Recognitions

  • 2019 - Fellow, The World Academy of Sciences

Overview

Ming Liu is affiliated with the Chinese Academy of Sciences in China. Their research primarily focuses on engineering, with significant contributions in electrical and electronic engineering, materials chemistry, artificial intelligence, cellular and molecular neuroscience, and cognitive neuroscience.

Their work covers a range of topics, including:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • Thin-Film Transistor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Neural Networks and Reservoir Computing

Ming Liu has collaborated frequently with coauthors such as Qi Liu, Xumeng Zhang, Ling Li, Qing Luo, and Xiaoxin Xu.

The scientist has published extensively in venues including Nature Communications, IEEE Transactions on Electron Devices, IEEE Journal of Solid-State Circuits, the 2021 IEEE International Electron Devices Meeting (IEDM), and arXiv (Cornell University).

Recent publications by Ming Liu include:

  • Two-dimensional materials for next-generation computing technologies, 2020, Nature Nanotechnology
  • Memristive technologies for data storage, computation, encryption, and radio-frequency communication, 2022, Science
  • An artificial spiking afferent nerve based on Mott memristors for neurorobotics, 2020, Nature Communications
  • A highly CMOS compatible hafnia-based ferroelectric diode, 2020, Nature Communications
  • Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging, 2021, Nature Communications

Ming Liu has also contributed to book publications, including a work published by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" in 2021.

Among their recognitions, Ming Liu was named a Fellow of The World Academy of Sciences in 2019.

Best Publications

  • Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

    Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu

  • Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

    Qi Liu;Jun Sun;Hangbing Lv;Shibing Long

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

    Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang

  • Strategies to achieve high performance piezoelectric nanogenerators

    Dengwei Hu;Minggang Yao;Yong Fan;Chunrui Ma

  • Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

    Weihua Guan;Shibing Long;Qi Liu;Ming Liu

  • Resistive switching memory effect of ZrO2 films with Zr+ implanted

    Qi Liu;Weihua Guan;Shibing Long;Rui Jia

  • An Artificial Neuron Based on a Threshold Switching Memristor

    Xumeng Zhang;Wei Wang;Qi Liu;Xiaolong Zhao

  • Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Yan Wang;Qi Liu;Shibing Long;Wei Wang

  • An artificial spiking afferent nerve based on Mott memristors for neurorobotics.

    Xumeng Zhang;Ye Zhuo;Qing Luo;Zuheng Wu

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering.

    Zixiong Sun;Chunrui Ma;Ming Liu;Jin Cui

  • Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions

    Qi Liu;Shibing Long;Wei Wang;Qingyun Zuo

  • On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

    Weihua Guan;Ming Liu;Shibing Long;Qi Liu

  • A highly CMOS compatible hafnia-based ferroelectric diode.

    Qing Luo;Yan Cheng;Jianguo Yang;Rongrong Cao

  • An Overview of the Ultrawide Bandgap Ga 2 O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

    HuiWen Xue;HuiWen Xue;QiMing He;GuangZhong Jian;ShiBing Long

  • Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

    Weihua Guan;Shibing Long;Rui Jia;Ming Liu

  • Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

    Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu

  • Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

    Xiaolong Zhao;Xiaolong Zhao;Jun Ma;Xiangheng Xiao;Qi Liu;Qi Liu

  • Light-Gated Memristor with Integrated Logic and Memory Functions

    Hongwei Tan;Gang Liu;Huali Yang;Xiaohui Yi

  • Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

    Yuan Qin;Liheng Li;Xiaolong Zhao;Gary S. Tompa

Frequent Co-Authors

Shibing Long
Shibing Long University of Science and Technology of China
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Zuo-Guang Ye
Zuo-Guang Ye Simon Fraser University
Nian X. Sun
Nian X. Sun Northeastern University
Wei Ren
Wei Ren Shaanxi Normal University
Wei Ren
Wei Ren Xi'an Jiaotong University
Ling Li
Ling Li Chinese Academy of Sciences
Chun-Lin Jia
Chun-Lin Jia Xi'an Jiaotong University
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Jing Liu
Jing Liu Chinese Academy of Sciences

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