2026 Fei Zeng: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	66	5376	5200	1637	1630	255	15080

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

5376

5200

1637

1630

255

15080

Overview

Fei Zeng is affiliated with Tsinghua University in China and has a research focus within the field of Engineering, with particular specialization in Electrical and Electronic Engineering, Biomedical Engineering, and Materials Chemistry. Their research portfolio also encompasses Mechanical Engineering and Atomic and Molecular Physics, and Optics.

The scientist has contributed extensively across several main topics, including:

Acoustic Wave Resonator Technologies
Ferroelectric and Piezoelectric Materials
Mechanical and Optical Resonators
Advanced Memory and Neural Computing
Advanced Sensor and Energy Harvesting Materials
Gas Sensing Nanomaterials and Sensors
Neural dynamics and brain function

Fei Zeng's recent significant publications include:

"Building energy simulation and its application for building performance optimization: A review of methods, tools, and case studies" (2023), published in Advances in Applied Energy
"High-Performance Surface Acoustic Wave Devices Using LiNbO₃/SiO₂/SiC Multilayered Substrates" (2021), published in IEEE Transactions on Microwave Theory and Techniques
"Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure" (2021), published in IEEE Electron Device Letters
"Superparaelectric (Ba_0.95,Sr_0.05)(Zr_0.2,Ti_0.8)O₃ Ultracapacitors" (2020), published in Advanced Energy Materials
"Design of a Controllable Redox-Diffusive Threshold Switching Memristor" (2020), published in Advanced Electronic Materials

Frequent co-authors collaborating with Fei Zeng include:

Feng Pan
Cheng Song
Sulei Fu
Rongxuan Su
Huiping Xu

Fei Zeng commonly publishes in the following venues:

SSRN Electronic Journal
IEEE Transactions on Microwave Theory and Techniques
IEEE Electron Device Letters
Applied Sciences
Journal of Microelectromechanical Systems

Best Publications

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F. Pan;S. Gao;C. Chen;C. Song

1470
Citations
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu

1008
Citations
Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

F. Pan;C. Song;X.J. Liu;Y.C. Yang

798
Citations
Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO

C. Song;K. W. Geng;F. Zeng;X. B. Wang

307
Citations
Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system

Sizhao Li;Fei Zeng;Chao Chen;Hongyan Liu

293
Citations
Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

Y. C. Yang;C. Song;X. H. Wang;F. Zeng

292
Citations
Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO

Guang Chen;Cheng Song;Chao Chen;Shuang Gao

291
Citations
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

Feng Pan;Chao Chen;Zhi-shun Wang;Yu-chao Yang

273
Citations
Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Shuang Gao;Cheng Song;Chao Chen;Fei Zeng

232
Citations
Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

X.B. Wang;C. Song;K.W. Geng;F. Zeng

231
Citations
Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.

Y. Y. Wang;C. Song;B. Cui;G. Y. Wang

223
Citations
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

C. Chen;Y. C. Yang;F. Zeng;F. Pan

190
Citations
Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

Yiming Sun;Meiqian Tai;Cheng Song;Ziyu Wang

180
Citations
Correlation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin films

Hongyan Liu;Fei Zeng;Yisong Lin;Guangyue Wang

178
Citations
Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

Jun Yin;Fei Zeng;Fei Zeng;Qin Wan;Fan Li

176
Citations
A new type of glucose biosensor based on surface acoustic wave resonator using Mn-doped ZnO multilayer structure

Jingting Luo;Pingxiang Luo;Min Xie;Ke Du

156
Citations
Evaluating modulus and hardness enhancement in evaporated Cu/W multilayers

S.P. Wen;R.L. Zong;F. Zeng;Y. Gao

155
Citations
Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching.

Yiming Sun;Cheng Song;Jun Yin;Xianzhe Chen

152
Citations
Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

Shuang Gao;Fei Zeng;Fan Li;Minjuan Wang

148
Citations
Luminescence and Raman scattering properties of Ag-doped ZnO films

X B Wang;C Song;K W Geng;F Zeng

146
Citations
Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

C. Chen;F. Pan;Z. S. Wang;J. Yang

141
Citations