The scientist’s investigation covers issues in Optoelectronics, Doping, Condensed matter physics, Nanotechnology and Ferromagnetism. His Optoelectronics research is multidisciplinary, incorporating perspectives in Diamond, Rectification, Surface acoustic wave, Thermal conduction and Thermal stability. His Doping research incorporates elements of Ferroelectricity and Analytical chemistry.
His Condensed matter physics research focuses on Spintronics and Spin. His Nanotechnology research includes themes of Memristor, Resistive touchscreen and Resistive random-access memory. His Memristor study incorporates themes from AND gate and Unconventional computing.
His main research concerns Condensed matter physics, Optoelectronics, Ferromagnetism, Analytical chemistry and Doping. The various areas that Fei Zeng examines in his Condensed matter physics study include Thin film, Magnetization and Magnetoresistance. His research integrates issues of Nanotechnology, Resistive switching, Resistive random-access memory, Surface acoustic wave and Electrical conductor in his study of Optoelectronics.
His Nanotechnology study integrates concerns from other disciplines, such as Memristor and Conductive polymer. His Ferromagnetism research incorporates themes from XANES, Ferroelectricity and Magnetic moment. His work deals with themes such as Ionic bonding, Wurtzite crystal structure and Sputter deposition, which intersect with Doping.
Fei Zeng mostly deals with Optoelectronics, Surface acoustic wave, Memristor, Chemical physics and Bilayer. His Optoelectronics research is multidisciplinary, incorporating perspectives in Layer, Electrical conductor and Current. His Electrical conductor research includes elements of Programmable metallization cell, Resistive random-access memory and Voltage.
Fei Zeng combines subjects such as PEDOT:PSS, Poly and Nanotechnology with his study of Memristor. His Chemical physics research includes themes of Doping and Pulse. His Doping research is multidisciplinary, incorporating elements of Semiconductor and Electrochemical cell.
His scientific interests lie mostly in Optoelectronics, Chemical physics, Memristor, Resistive random-access memory and Bilayer. His Optoelectronics research is multidisciplinary, relying on both Layer, Surface acoustic wave and Sputter deposition. He has researched Layer in several fields, including Resistive switching, Crossbar switch, Cathode, Resistor and Polarity.
The concepts of his Surface acoustic wave study are interwoven with issues in Stress, Full width at half maximum, Epitaxy and Doping. His studies in Chemical physics integrate themes in fields like Transmission, Pulse, Nanoclusters and Plasticity. His Resistive random-access memory study incorporates themes from Electronic circuit, Nanotechnology, Nanoindentation, Non-volatile memory and Electrical conductor.
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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan;S. Gao;C. Chen;C. Song.
Materials Science & Engineering R-reports (2014)
Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
F. Pan;C. Song;X.J. Liu;Y.C. Yang.
Materials Science & Engineering R-reports (2008)
Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO
C. Song;K. W. Geng;F. Zeng;X. B. Wang.
Physical Review B (2006)
Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO
Guang Chen;Cheng Song;Chao Chen;Shuang Gao.
Advanced Materials (2012)
Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films
Y. C. Yang;C. Song;X. H. Wang;F. Zeng.
Applied Physics Letters (2008)
Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system
Sizhao Li;Fei Zeng;Chao Chen;Hongyan Liu.
Journal of Materials Chemistry C (2013)
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
Feng Pan;Chao Chen;Zhi-shun Wang;Yu-chao Yang.
Progress in Natural Science: Materials International (2010)
Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering
X.B. Wang;C. Song;K.W. Geng;F. Zeng.
Applied Surface Science (2007)
Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
Shuang Gao;Cheng Song;Chao Chen;Fei Zeng.
Journal of Physical Chemistry C (2012)
Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.
Y. Y. Wang;C. Song;B. Cui;G. Y. Wang.
Physical Review Letters (2012)
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