In the subject of Nanotechnology, Yuchao Yang integrates adjacent academic fields such as Nanoscopic scale, Characterization (materials science) and Transmission electron microscopy. His Optoelectronics study typically links adjacent topics like Non-volatile memory and Dielectric. His Non-volatile memory study frequently links to adjacent areas such as Electrical engineering. His Voltage research extends to Electrical engineering, which is thematically connected. His study ties his expertise on Resistive random-access memory together with the subject of Voltage. His research combines Optoelectronics and Dielectric. He is involved in relevant fields of research such as Microstructure and Protein filament in the realm of Composite material. His research on Microstructure often connects related areas such as Composite material. Yuchao Yang integrates many fields, such as Physical chemistry, Organic chemistry and Chemical physics, in his works.
His study in the field of Physical chemistry also crosses realms of Nanotechnology and Optoelectronics. Yuchao Yang combines topics linked to Electrode with his work on Physical chemistry. Yuchao Yang undertakes interdisciplinary study in the fields of Nanotechnology and Electrical engineering through his research. He undertakes interdisciplinary study in the fields of Optoelectronics and Electrical engineering through his works. He conducted interdisciplinary study in his works that combined Artificial intelligence and Neuromorphic engineering. In his research, Yuchao Yang performs multidisciplinary study on Neuromorphic engineering and Artificial neural network. Yuchao Yang conducts interdisciplinary study in the fields of Artificial neural network and Artificial intelligence through his works. He merges Memristor with Electronic engineering in his study. He integrates Electronic engineering with Memristor in his research.
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Observation of conducting filament growth in nanoscale resistive memories
Yuchao Yang;Peng Gao;Siddharth Gaba;Ting Chang.
Nature Communications (2012)
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu.
Nano Letters (2009)
Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
F. Pan;C. Song;X.J. Liu;Y.C. Yang.
Materials Science & Engineering R-reports (2008)
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yuchao Yang;Peng Gao;Peng Gao;Linze Li;Xiaoqing Pan.
Nature Communications (2014)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics.
Jiadi Zhu;Yuchao Yang;Rundong Jia;Zhongxin Liang.
Advanced Materials (2018)
Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing
Zongwei Wang;Minghui Yin;Teng Zhang;Yimao Cai.
Nanoscale resistive switching devices: mechanisms and modeling
Yuchao Yang;Wei Lu.
Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films
Y. C. Yang;C. Song;X. H. Wang;F. Zeng.
Applied Physics Letters (2008)
Complementary resistive switching in tantalum oxide-based resistive memory devices
Yuchao Yang;Patrick Sheridan;Wei Lu.
Applied Physics Letters (2012)
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