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Yuchao Yang

Yuchao Yang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
14842
World Ranking
2358
National Ranking
394

Overview

Yuchao Yang is affiliated with Peking University in China and has a substantial body of research focused primarily within the fields of Engineering and Computer Science. Their published work emphasizes electrical and electronic engineering, as well as artificial intelligence and computational neuroscience subfields.

The main research topics addressed by Yang include advanced memory and neural computing, ferroelectric and negative capacitance devices, neural networks and reservoir computing, neural dynamics and brain function, neuroscience and neural engineering, photoreceptor and optogenetics research, and CCD and CMOS imaging sensors.

Yang's frequently published research venues include:

  • arXiv (Cornell University)
  • Nature Communications
  • Advanced Materials
  • Advanced Intelligent Systems
  • Science China Information Sciences

Prominent recent papers by Yang cover various aspects of neuromorphic devices, memristors, and synaptic systems:

  • "A comprehensive review on emerging artificial neuromorphic devices" (2020), Applied Physics Reviews
  • "Dynamical memristors for higher-complexity neuromorphic computing" (2022), Nature Reviews Materials
  • "An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing" (2022), Nature Electronics
  • "Brain-inspired computing with memristors: Challenges in devices, circuits, and systems" (2020), Applied Physics Reviews
  • "Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks" (2020), Nature Communications

Frequent collaborators include Ru Huang, Teng Zhang, Bonan Yan, Keqin Liu, and Bingjie Dang, with whom Yang has coauthored numerous research papers across neuromorphic engineering and related disciplines.

Best Publications

  • Observation of conducting filament growth in nanoscale resistive memories

    Yuchao Yang;Peng Gao;Siddharth Gaba;Ting Chang

  • Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

    Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu

  • Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

    F. Pan;C. Song;X.J. Liu;Y.C. Yang

  • A comprehensive review on emerging artificial neuromorphic devices

    Jiadi Zhu;Teng Zhang;Yuchao Yang;Ru Huang

  • Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

    Yuchao Yang;Peng Gao;Peng Gao;Linze Li;Xiaoqing Pan

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics.

    Jiadi Zhu;Yuchao Yang;Rundong Jia;Zhongxin Liang

  • Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing

    Zongwei Wang;Minghui Yin;Teng Zhang;Yimao Cai

  • Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

    Yang Zhang;Yang Zhang;Zhongrui Wang;Jiadi Zhu;Yuchao Yang

  • Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks

    Qingxi Duan;Zhaokun Jing;Xiaolong Zou;Yanghao Wang

  • Nanoscale resistive switching devices: mechanisms and modeling

    Yuchao Yang;Wei Lu

  • Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

    Y. C. Yang;C. Song;X. H. Wang;F. Zeng

  • Complementary resistive switching in tantalum oxide-based resistive memory devices

    Yuchao Yang;Patrick Sheridan;Wei Lu

  • Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

    Feng Pan;Chao Chen;Zhi-shun Wang;Yu-chao Yang

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Oxide Heterostructure Resistive Memory

    Yuchao Yang;ShinHyun Choi;Wei Lu

  • Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

    C. Chen;Y. C. Yang;F. Zeng;F. Pan

  • Probing nanoscale oxygen ion motion in memristive systems.

    Yuchao Yang;Xiaoxian Zhang;Liang Qin;Liang Qin;Qibin Zeng

  • Probing memristive switching in nanoionic devices

    Yuchao Yang;Ru Huang

  • Roadmap on emerging hardware and technology for machine learning.

    Karl Berggren;Qiangfei Xia;Konstantin K. Likharev;Dmitri B. Strukov

  • A 1.041-Mb/mm2 27.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications

    Unknown

  • Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity.

    Yuchao Yang;Bing Chen;Wei D. Lu

Frequent Co-Authors

Ru Huang
Ru Huang Peking University
Wei Lu
Wei Lu University of Michigan–Ann Arbor
Fei Zeng
Fei Zeng Tsinghua University
Feng Pan
Feng Pan Tsinghua University
Ilia Valov
Ilia Valov RWTH Aachen University
Rainer Waser
Rainer Waser RWTH Aachen University
J. Joshua Yang
J. Joshua Yang University of Southern California
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Cheng Song
Cheng Song Tsinghua University
Ming Liu
Ming Liu Fudan University

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