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Materials Science
Germany
2022

D-Index & Metrics

Materials Science

D-Index
126
Citations
74778
World Ranking
390
National Ranking
21

Rainer Waser publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Rainer Waser sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 1,044 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Rainer Waser D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Rainer Waser sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 126 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Germany Leader Award

Overview

Rainer Waser is affiliated with RWTH Aachen University in Germany. The primary research focus spans the fields of Engineering and Materials Science, with a particular emphasis on Electrical and Electronic Engineering, Materials Chemistry, and related subfields. The work also engages with Cellular and Molecular Neuroscience, Polymers and Plastics, and Electronic, Optical and Magnetic Materials.

The main research topics covered by Waser include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Semiconductor materials and devices, Transition Metal Oxide Nanomaterials, Electronic and Structural Properties of Oxides, and Photoreceptor and Optogenetics research.

Frequent publication venues for Waser's work include IEEE Transactions on Electron Devices, Advanced Electronic Materials, arXiv (Cornell University), IEEE Access, and RWTH Publications (RWTH Aachen).

Among recent papers authored or coauthored by Waser are:

  • Standards for the Characterization of Endurance in Resistive Switching Devices, 2021, ACS Nano
  • Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis, 2021, Nature Materials
  • Nanoionic memristive phenomena in metal oxides: the valence change mechanism, 2021, Advances In Physics
  • Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models, 2020, IEEE Transactions on Circuits and Systems I Regular Papers
  • Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors, 2021, Advanced Functional Materials

Frequent co-authors collaborating with Waser include:

  • Stephan Menzel
  • Dirk J. Wouters
  • Stefan Wiefels
  • Christopher Bengel
  • Regina Dittmann

The research work primarily concentrates on developing and modeling materials and devices relevant to advanced electronics, with particular attention to resistive switching, memristive phenomena, and nanoionic effects in metal oxides. This is closely connected to broader areas in neural computing and semiconductor technology approaches.

Best Publications

  • Nanoionics-based resistive switching memories

    Rainer Waser;Rainer Waser;Masakazu Aono

  • Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

    Rainer Waser;Rainer Waser;Regina Dittmann;Georgi Staikov;Kristof Szot

  • Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

    Krzysztof Szot;Wolfgang Speier;Gustav Bihlmayer;Rainer Waser

  • Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

    B. J. Choi;Doo Seok Jeong;S. K. Kim;C. Rohde

  • Complementary resistive switches for passive nanocrossbar memories

    Eike Linn;Roland Rosezin;Carsten Kügeler;Rainer Waser;Rainer Waser

  • Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices

    Rainer Waser

  • Nanoelectronics and Information Technology

    Rainer Waser

  • Electrochemical metallization memories—fundamentals, applications, prospects

    Ilia Valov;Rainer Waser;Rainer Waser;John R Jameson;Michael N Kozicki

  • Electrical properties of the grain boundaries of oxygen ion conductors: Acceptor-doped zirconia and ceria

    Xin Guo;Xin Guo;Rainer Waser

  • dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics

    Rainer Waser;Tudor Baiatu;Karl-Heinz Härdtl

  • Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

    Yuchao Yang;Peng Gao;Peng Gao;Linze Li;Xiaoqing Pan

  • Nanoscale cation motion in TaO x , HfO x and TiO x memristive systems

    Anja Wedig;Michael Luebben;Deok Yong Cho;Marco Moors

  • Nanobatteries in redox-based resistive switches require extension of memristor theory

    I. Valov;E. Linn;S. Tappertzhofen;S. Schmelzer

  • Chemical solution deposition of electronic oxide films

    Robert W. Schwartz;Theodor Schneller;Rainer Waser;Rainer Waser

  • Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

    C. Schindler;S.C.P. Thermadam;R. Waser;M.N. Kozicki

  • dc Electrical Degradation of Perovskite‐Type Titanates: III, A Model of the Mechanism

    Tudor Baiatu;Rainer Waser;Karl-Heinz Härdtl

  • The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition

    Cem Basceri;S. K. Streiffer;Angus I. Kingon;R. Waser

  • Bulk Conductivity and Defect Chemistry of Acceptor‐Doped Strontium Titanate in the Quenched State

    Rainer Waser

  • Theoretical current-voltage characteristics of ferroelectric tunnel junctions

    H. Kohlstedt;H. Kohlstedt;N. A. Pertsev;N. A. Pertsev;J. Rodríguez Contreras;R. Waser;R. Waser

  • Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films

    Chun-Lin Jia;Valanoor Nagarajan;Jia-Qing He;Lothar Houben

  • Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories

    G. W. Dietz;M. Schumacher;R. Waser;S. K. Streiffer

Frequent Co-Authors

Stephan Menzel
Stephan Menzel Forschungszentrum Jülich
Ulrich Böttger
Ulrich Böttger RWTH Aachen University
Ilia Valov
Ilia Valov RWTH Aachen University
Regina Dittmann
Regina Dittmann Forschungszentrum Jülich
Hermann Kohlstedt
Hermann Kohlstedt Kiel University
Dirk Wouters
Dirk Wouters RWTH Aachen University
Chun-Lin Jia
Chun-Lin Jia Xi'an Jiaotong University
Joachim Mayer
Joachim Mayer RWTH Aachen University
Claus M. Schneider
Claus M. Schneider Forschungszentrum Jülich
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University

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