World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
12452
World Ranking
4001
National Ranking
115

Materials Science

D-Index
43
Citations
12641
World Ranking
12201
National Ranking
663

Overview

Ulrich Böttger is affiliated with RWTH Aachen University in Germany. Their research primarily focuses on fields including Engineering and Physics and Astronomy, with a strong specialization in Electrical and Electronic Engineering.

The scientist's work encompasses several subfields related to materials and device engineering, such as Materials Chemistry, Nuclear and High Energy Physics, Cellular and Molecular Neuroscience, and Radiation. Their main research topics include:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Sensor and Energy Harvesting Materials

Ulrich Böttger has contributed to multiple scientific articles published in notable venues. Frequent publication venues include:

  • Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • The European Physical Journal C
  • Japanese Journal of Applied Physics

Some recent papers authored or coauthored by Ulrich Böttger cover a range of topics related to resistive memory, switching events, and thin film materials. These include:

  • Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory, 2021, IEEE Transactions on Electron Devices
  • Study of the SET switching event of VCM-based memories on a picosecond timescale, 2020, Journal of Applied Physics
  • Determining the Electrical Charging Speed Limit of ReRAM Devices, 2021, IEEE Journal of the Electron Devices Society
  • Impact of the processing temperature on the laser-based crystallization of chemical solution deposited lead zirconate titanate thin films on short timescales, 2022, Journal of Applied Physics
  • Parameters for ferroelectric phase stabilization of sputtered undoped hafnium oxide thin films, 2023, Japanese Journal of Applied Physics

The scientist has frequently collaborated with a number of researchers, demonstrating a networked approach to their research. Frequent co-authors include:

  • Moritz von Witzleben
  • Stephan Menzel
  • Jan Lübben
  • Fenja Berg
  • Rainer Waser

Best Publications

  • Ferroelectricity in hafnium oxide thin films

    T. S. Böscke;J. Müller;D. Bräuhaus;U. Schröder

  • Ferroelectricity in Simple Binary ZrO2 and HfO2

    Johannes Müller;Tim S. Böscke;Uwe Schröder;Stefan Mueller

  • Ferroelectricity in yttrium-doped hafnium oxide

    J. Müller;U. Schröder;T. S. Böscke;I. Müller

  • Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    J. Müller;T. S. Böscke;D. Bräuhaus;U. Schröder

  • Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

    E Linn;R Rosezin;S Tappertzhofen;U Böttger

  • Phase transitions in ferroelectric silicon doped hafnium oxide

    T. S. Böscke;St. Teichert;D. Bräuhaus;J. Müller

  • Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches

    Stephan Menzel;Matthias Waters;Astrid Marchewka;Ulrich Böttger

  • Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

    T. S. Boscke;J. Muller;D. Brauhaus;U. Schroder

  • Physics of the Switching Kinetics in Resistive Memories

    Stephan Menzel;Ulrich Böttger;Martin Wimmer;Martin Salinga

  • Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

    S. Starschich;S. Menzel;U. Böttger

  • Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

    Michael Hoffmann;Uwe Schroeder;Christopher Künneth;Alfred Kersch

  • Current status and challenges of ferroelectric memory devices

    H. Kohlstedt;Y. Mustafa;A. Gerber;A. Petraru

  • Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy

    A. Roelofs;U. Böttger;R. Waser;F. Schlaphof

  • About the deformation of ferroelectric hystereses

    T. Schenk;E. Yurchuk;S. Mueller;U. Schroeder

  • Simulation of multilevel switching in electrochemical metallization memory cells

    Stephan Menzel;Ulrich Böttger;Rainer Waser

  • Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

    S. Starschich;D. Griesche;T. Schneller;R. Waser

  • Mechanical force sensors using organic thin-film transistors

    Grzegorz Darlinski;Ulrich Böttger;Rainer Waser;Hagen Klauk

  • Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

    Franz P. G. Fengler;Milan Pešić;Sergej Starschich;Theodor Schneller

  • Exploiting the switching dynamics of HfO 2 -based ReRAM devices for reliable analog memristive behavior

    F. Cüppers;S. Menzel;C. Bengel;A. Hardtdegen

  • Dielectric dispersion of ferroelectric ceramics and single crystals at microwave frequencies

    G. Arlt;U. Böttger;S. Witte

  • Electrostrictive resonances in (Ba0.7Sr0.3)TiO3 thin filmsat microwave frequencies

    S. Tappe;U. Böttger;R. Waser

  • Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films

    A. G. Zembilgotov;N. A. Pertsev;U. Böttger;R. Waser

Frequent Co-Authors

Rainer Waser
Rainer Waser RWTH Aachen University
Stephan Menzel
Stephan Menzel Forschungszentrum Jülich
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Ilia Valov
Ilia Valov RWTH Aachen University
Joachim Mayer
Joachim Mayer RWTH Aachen University
Wilfried Mokwa
Wilfried Mokwa RWTH Aachen University
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University
Matthias Wuttig
Matthias Wuttig RWTH Aachen University

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