World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
12452
World Ranking
4001
National Ranking
114

Materials Science

D-Index
43
Citations
12641
World Ranking
12198
National Ranking
662

Ulrich Böttger publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ulrich Böttger sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 134 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ulrich Böttger D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ulrich Böttger sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ulrich Böttger is affiliated with RWTH Aachen University in Germany. Their research primarily focuses on fields including Engineering and Physics and Astronomy, with a strong specialization in Electrical and Electronic Engineering.

The scientist's work encompasses several subfields related to materials and device engineering, such as Materials Chemistry, Nuclear and High Energy Physics, Cellular and Molecular Neuroscience, and Radiation. Their main research topics include:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Sensor and Energy Harvesting Materials

Ulrich Böttger has contributed to multiple scientific articles published in notable venues. Frequent publication venues include:

  • Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • The European Physical Journal C
  • Japanese Journal of Applied Physics

Some recent papers authored or coauthored by Ulrich Böttger cover a range of topics related to resistive memory, switching events, and thin film materials. These include:

  • Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory, 2021, IEEE Transactions on Electron Devices
  • Study of the SET switching event of VCM-based memories on a picosecond timescale, 2020, Journal of Applied Physics
  • Determining the Electrical Charging Speed Limit of ReRAM Devices, 2021, IEEE Journal of the Electron Devices Society
  • Impact of the processing temperature on the laser-based crystallization of chemical solution deposited lead zirconate titanate thin films on short timescales, 2022, Journal of Applied Physics
  • Parameters for ferroelectric phase stabilization of sputtered undoped hafnium oxide thin films, 2023, Japanese Journal of Applied Physics

The scientist has frequently collaborated with a number of researchers, demonstrating a networked approach to their research. Frequent co-authors include:

  • Moritz von Witzleben
  • Stephan Menzel
  • Jan Lübben
  • Fenja Berg
  • Rainer Waser

Best Publications

  • Ferroelectricity in hafnium oxide thin films

    T. S. Böscke;J. Müller;D. Bräuhaus;U. Schröder

  • Ferroelectricity in Simple Binary ZrO2 and HfO2

    Johannes Müller;Tim S. Böscke;Uwe Schröder;Stefan Mueller

  • Ferroelectricity in yttrium-doped hafnium oxide

    J. Müller;U. Schröder;T. S. Böscke;I. Müller

  • Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    J. Müller;T. S. Böscke;D. Bräuhaus;U. Schröder

  • Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

    E Linn;R Rosezin;S Tappertzhofen;U Böttger

  • Phase transitions in ferroelectric silicon doped hafnium oxide

    T. S. Böscke;St. Teichert;D. Bräuhaus;J. Müller

  • Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches

    Stephan Menzel;Matthias Waters;Astrid Marchewka;Ulrich Böttger

  • Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

    T. S. Boscke;J. Muller;D. Brauhaus;U. Schroder

  • Physics of the Switching Kinetics in Resistive Memories

    Stephan Menzel;Ulrich Böttger;Martin Wimmer;Martin Salinga

  • Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

    S. Starschich;S. Menzel;U. Böttger

  • Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

    Michael Hoffmann;Uwe Schroeder;Christopher Künneth;Alfred Kersch

  • Current status and challenges of ferroelectric memory devices

    H. Kohlstedt;Y. Mustafa;A. Gerber;A. Petraru

  • Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy

    A. Roelofs;U. Böttger;R. Waser;F. Schlaphof

  • About the deformation of ferroelectric hystereses

    T. Schenk;E. Yurchuk;S. Mueller;U. Schroeder

  • Simulation of multilevel switching in electrochemical metallization memory cells

    Stephan Menzel;Ulrich Böttger;Rainer Waser

  • Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

    S. Starschich;D. Griesche;T. Schneller;R. Waser

  • Mechanical force sensors using organic thin-film transistors

    Grzegorz Darlinski;Ulrich Böttger;Rainer Waser;Hagen Klauk

  • Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

    Franz P. G. Fengler;Milan Pešić;Sergej Starschich;Theodor Schneller

  • Exploiting the switching dynamics of HfO 2 -based ReRAM devices for reliable analog memristive behavior

    F. Cüppers;S. Menzel;C. Bengel;A. Hardtdegen

  • Dielectric dispersion of ferroelectric ceramics and single crystals at microwave frequencies

    G. Arlt;U. Böttger;S. Witte

  • Electrostrictive resonances in (Ba0.7Sr0.3)TiO3 thin filmsat microwave frequencies

    S. Tappe;U. Böttger;R. Waser

  • Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films

    A. G. Zembilgotov;N. A. Pertsev;U. Böttger;R. Waser

Frequent Co-Authors

Rainer Waser
Rainer Waser RWTH Aachen University
Stephan Menzel
Stephan Menzel Forschungszentrum Jülich
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Ilia Valov
Ilia Valov RWTH Aachen University
Joachim Mayer
Joachim Mayer RWTH Aachen University
Wilfried Mokwa
Wilfried Mokwa RWTH Aachen University
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University
Matthias Wuttig
Matthias Wuttig RWTH Aachen University

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