World's Best Scientists 2026 revealed!
Uwe Schroeder

Uwe Schroeder

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
75
Citations
21236
World Ranking
681
National Ranking
16

Materials Science

D-Index
78
Citations
22575
World Ranking
2967
National Ranking
168

Uwe Schroeder publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Uwe Schroeder sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 264 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Uwe Schroeder D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Uwe Schroeder sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 75 D-Index — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Uwe Schroeder is affiliated with Namlab gGmbH in Germany, focusing their research on engineering and materials science. Their expertise spans the subfields of electrical and electronic engineering and materials chemistry, with additional work in biomedical engineering, mechanics of materials, and atomic and molecular physics, and optics.

The main topics of Schroeder's work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Ferroelectric and Piezoelectric Materials
  • Advanced Memory and Neural Computing
  • Electronic and Structural Properties of Oxides
  • Acoustic Wave Resonator Technologies

Schroeder has contributed to multiple frequently cited papers, such as:

  • "The fundamentals and applications of ferroelectric HfO2" (2022) published in Nature Reviews Materials
  • "The Past, the Present, and the Future of Ferroelectric Memories" (2020) in IEEE Transactions on Electron Devices
  • "Next generation ferroelectric materials for semiconductor process integration and their applications" (2021) in Journal of Applied Physics
  • "Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface" (2020) in Journal of Applied Physics
  • "Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices" (2020) in Journal of Materials Chemistry C

The scientist collaborates frequently with several researchers, including Thomas Mikolajick, Patrick D. Lomenzo, Monica Materano, Alfred Kersch, and Bohan Xu. Their collaborative works contribute to a broader understanding in the field of ferroelectric materials and semiconductor device integration.

Schroeder's research is regularly published in high-impact venues, with notable publications in:

  • Applied Physics Letters
  • ACS Applied Electronic Materials
  • Advanced Functional Materials
  • Journal of Applied Physics
  • ACS Applied Materials & Interfaces

Their body of work encompasses more than 200 publications in engineering and materials science, particularly contributing to topics related to ferroelectric devices and semiconductor materials, positioning them as a consistent contributor to advancing knowledge in these technical fields.

Best Publications

  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  • Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

    Stefan Mueller;Johannes Mueller;Aarti Singh;Stefan Riedel

  • Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

    Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani

  • The fundamentals and applications of ferroelectric HfO2

    Unknown

  • On the structural origins of ferroelectricity in HfO2 thin films

    Xiahan Sang;Everett D. Grimley;Tony Schenk;Uwe Schroeder

  • Stabilizing the ferroelectric phase in doped hafnium oxide

    M. Hoffmann;U. Schroeder;T. Schenk;T. Shimizu

  • Review and perspective on ferroelectric HfO2-based thin films for memory applications

    Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  • The Past, the Present, and the Future of Ferroelectric Memories

    T. Mikolajick;U. Schroeder;S. Slesazeck

  • Unveiling the double-well energy landscape in a ferroelectric layer

    Michael Hoffmann;Franz P. G. Fengler;Melanie Herzig;Terence Mittmann

  • Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    Uwe Schroeder;Ekaterina Yurchuk;Johannes Müller;Dominik Martin

  • Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films

    Everett D. Grimley;Tony Schenk;Xiahan Sang;Milan Pešić

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

    M. H. Park;T. Schenk;C. M. Fancher;E. D. Grimley

  • Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Tony Schenk

  • Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.

    Uwe Schroeder;Claudia Richter;Min Hyuk Park;Tony Schenk

  • Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

    Ekaterina Yurchuk;Johannes Muller;Stefan Muller;Jan Paul

  • Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder

  • Towards Oxide Electronics: a Roadmap

    M. Coll;J. Fontcuberta;M. Althammer;M. Bibes

  • Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

    Anna G. Chernikova;Maxim G. Kozodaev;Dmitry V. Negrov;Evgeny V. Korostylev

  • Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

    Thomas Mikolajick;Stefan Slesazeck;Min Hyuk Park;Uwe Schroeder

  • Ferroelectricity in Gd-Doped HfO2 Thin Films

    S. Mueller;C. Adelmann;A. Singh;S. Van Elshocht

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Min Hyuk Park
Min Hyuk Park Seoul National University
Jacob L. Jones
Jacob L. Jones North Carolina State University
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University
Ulrich Böttger
Ulrich Böttger RWTH Aachen University

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