World's Best Scientists 2026 revealed!
Uwe Schroeder

Uwe Schroeder

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
75
Citations
21236
World Ranking
681
National Ranking
17

Materials Science

D-Index
78
Citations
22575
World Ranking
2969
National Ranking
169

Overview

Uwe Schroeder is affiliated with Namlab gGmbH in Germany, focusing their research on engineering and materials science. Their expertise spans the subfields of electrical and electronic engineering and materials chemistry, with additional work in biomedical engineering, mechanics of materials, and atomic and molecular physics, and optics.

The main topics of Schroeder's work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Ferroelectric and Piezoelectric Materials
  • Advanced Memory and Neural Computing
  • Electronic and Structural Properties of Oxides
  • Acoustic Wave Resonator Technologies

Schroeder has contributed to multiple frequently cited papers, such as:

  • "The fundamentals and applications of ferroelectric HfO2" (2022) published in Nature Reviews Materials
  • "The Past, the Present, and the Future of Ferroelectric Memories" (2020) in IEEE Transactions on Electron Devices
  • "Next generation ferroelectric materials for semiconductor process integration and their applications" (2021) in Journal of Applied Physics
  • "Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface" (2020) in Journal of Applied Physics
  • "Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices" (2020) in Journal of Materials Chemistry C

The scientist collaborates frequently with several researchers, including Thomas Mikolajick, Patrick D. Lomenzo, Monica Materano, Alfred Kersch, and Bohan Xu. Their collaborative works contribute to a broader understanding in the field of ferroelectric materials and semiconductor device integration.

Schroeder's research is regularly published in high-impact venues, with notable publications in:

  • Applied Physics Letters
  • ACS Applied Electronic Materials
  • Advanced Functional Materials
  • Journal of Applied Physics
  • ACS Applied Materials & Interfaces

Their body of work encompasses more than 200 publications in engineering and materials science, particularly contributing to topics related to ferroelectric devices and semiconductor materials, positioning them as a consistent contributor to advancing knowledge in these technical fields.

Best Publications

  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  • Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

    Stefan Mueller;Johannes Mueller;Aarti Singh;Stefan Riedel

  • Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

    Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani

  • The fundamentals and applications of ferroelectric HfO2

    Unknown

  • On the structural origins of ferroelectricity in HfO2 thin films

    Xiahan Sang;Everett D. Grimley;Tony Schenk;Uwe Schroeder

  • Stabilizing the ferroelectric phase in doped hafnium oxide

    M. Hoffmann;U. Schroeder;T. Schenk;T. Shimizu

  • Review and perspective on ferroelectric HfO2-based thin films for memory applications

    Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  • The Past, the Present, and the Future of Ferroelectric Memories

    T. Mikolajick;U. Schroeder;S. Slesazeck

  • Unveiling the double-well energy landscape in a ferroelectric layer

    Michael Hoffmann;Franz P. G. Fengler;Melanie Herzig;Terence Mittmann

  • Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    Uwe Schroeder;Ekaterina Yurchuk;Johannes Müller;Dominik Martin

  • Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films

    Everett D. Grimley;Tony Schenk;Xiahan Sang;Milan Pešić

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

    M. H. Park;T. Schenk;C. M. Fancher;E. D. Grimley

  • Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Tony Schenk

  • Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.

    Uwe Schroeder;Claudia Richter;Min Hyuk Park;Tony Schenk

  • Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

    Ekaterina Yurchuk;Johannes Muller;Stefan Muller;Jan Paul

  • Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder

  • Towards Oxide Electronics: a Roadmap

    M. Coll;J. Fontcuberta;M. Althammer;M. Bibes

  • Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

    Anna G. Chernikova;Maxim G. Kozodaev;Dmitry V. Negrov;Evgeny V. Korostylev

  • Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

    Thomas Mikolajick;Stefan Slesazeck;Min Hyuk Park;Uwe Schroeder

  • Ferroelectricity in Gd-Doped HfO2 Thin Films

    S. Mueller;C. Adelmann;A. Singh;S. Van Elshocht

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Min Hyuk Park
Min Hyuk Park Seoul National University
Jacob L. Jones
Jacob L. Jones North Carolina State University
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University
Ulrich Böttger
Ulrich Böttger RWTH Aachen University

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