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Best Scientists - Electronics and Electrical Engineering
Toshikazu Nishida

Toshikazu Nishida

University of Florida
United States

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 41 Citations 7,030 184 World Ranking 2659 National Ranking 1060

Overview

What is he best known for?

The fields of study Toshikazu Nishida is best known for:

Semiconductor
Silicon
Piezoelectricity

His research investigates the connection with Characterization (materials science) and areas like Nanotechnology which intersect with concerns in Thin film. While working in this field, Toshikazu Nishida studies both Thin film and Silicon. Toshikazu Nishida integrates several fields in his works, including Silicon and Tin. His work in Sensitivity (control systems) addresses issues such as Electronic engineering, which are connected to fields such as CMOS. His study on CMOS is mostly dedicated to connecting different topics, such as Electronic engineering. Toshikazu Nishida conducts interdisciplinary study in the fields of Optoelectronics and Semiconductor through his research. In his study, Toshikazu Nishida carries out multidisciplinary Semiconductor and Optoelectronics research. His Electrode study frequently draws connections between related disciplines such as Dielectric spectroscopy. He regularly ties together related areas like Electrode in his Dielectric spectroscopy studies.

His most cited work include:

Uniaxial-process-induced strained-Si: extending the CMOS roadmap (521 citations)
Lumped Element Modeling of Piezoelectric-Driven Synthetic Jet Actuators (262 citations)
Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants (230 citations)

What are the main themes of his work throughout his whole career to date

His Optoelectronics study frequently draws connections between related disciplines such as Quantum tunnelling. Nanotechnology is closely attributed to Thin film in his work. Thin film and Nanotechnology are frequently intertwined in his study. He connects Quantum mechanics with Electron in his study. Electron and Quantum mechanics are two areas of study in which Toshikazu Nishida engages in interdisciplinary work. He performs integrative study on Electrical engineering and Acoustics in his works. He performs integrative study on Acoustics and Electrical engineering. His Metallurgy study frequently intersects with other fields, such as Oxide. He regularly links together related areas like Metallurgy in his Oxide studies.

Toshikazu Nishida most often published in these fields:

Optoelectronics (71.43%)
Nanotechnology (38.10%)
Quantum mechanics (38.10%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Uniaxial-process-induced strained-Si: extending the CMOS roadmap

S.E. Thompson;Guangyu Sun;Youn Sung Choi;T. Nishida.
IEEE Transactions on Electron Devices (2006)

708 Citations

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

Y. Sun;S. E. Thompson;T. Nishida.
Journal of Applied Physics (2007)

574 Citations

Lumped Element Modeling of Piezoelectric-Driven Synthetic Jet Actuators

Quentin Gallas;Ryan Holman;Toshikazu Nishida;Bruce Carroll.
AIAA Journal (2003)

368 Citations

Strain effect in semiconductors : theory and device applications

Yongke Sun;Scott E. Thompson;Toshikazu Nishida.
(2010)

312 Citations

Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants

Abhishek Prasad;Qing Shan Xue;Viswanath Sankar;Toshikazu Nishida.
Journal of Neural Engineering (2012)

285 Citations

A MEMS acoustic energy harvester

S B Horowitz;M Sheplak;L N Cattafesta;T Nishida.
Journal of Micromechanics and Microengineering (2006)

277 Citations

Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

S. Thompson;G. Sun;K. Wu;J. Lim.
international electron devices meeting (2004)

276 Citations

Direct-current measurements of oxide and interface traps on oxidized silicon

A. Neugroschel;Chih-Tang Sah;K.M. Han;M.S. Carroll.
IEEE Transactions on Electron Devices (1995)

233 Citations

Acoustic energy harvesting using an electromechanical Helmholtz resonator.

Fei Liu;Alex Phipps;Stephen Horowitz;Khai Ngo.
Journal of the Acoustical Society of America (2008)

191 Citations

Strain Effect in Semiconductors

Yongke Sun;Scott E. Thompson;Toshikazu Nishida.
(2010)

173 Citations

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Frequent Co-Authors

External Links

Personal Website for Toshikazu Nishida