World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
9394
World Ranking
2821
National Ranking
1066

Toshikazu Nishida publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toshikazu Nishida sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Toshikazu Nishida D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toshikazu Nishida sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Toshikazu Nishida is affiliated with the University of Florida in the United States. Their research spans the fields of engineering and materials science, with a particular focus on electrical and electronic engineering, materials chemistry, and biomedical engineering. Additional subfields include automotive engineering and atomic and molecular physics, and optics.

The scientist has contributed to topics related to ferroelectric and negative capacitance devices, advanced memory and neural computing, and additive manufacturing and 3D printing technologies. Their work also addresses semiconductor materials and devices, MXene and MAX phase materials, electronic and structural properties of oxides, as well as ferroelectric and piezoelectric materials.

Recent papers authored or co-authored by Nishida include:

  • Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions (2020, Nanotechnology)
  • High-resolution stereolithography using a static liquid constrained interface (2021, Communications Materials)
  • Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films (2020, Applied Physics Letters)
  • A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator (2020, Applied Physics Letters)
  • Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films (2020, ECS Journal of Solid State Science and Technology)

Frequent coauthors in Nishida's research include Glen Walters, Aniruddh Shekhawat, Saeed Moghaddam, Paul Chojecki, and Roozbeh Tabrizian.

Their work has appeared in multiple scientific venues, including:

  • Applied Physics Letters
  • Nanotechnology
  • Communications Materials
  • Small Methods
  • ECS Journal of Solid State Science and Technology

Best Publications

  • Uniaxial-process-induced strained-Si: extending the CMOS roadmap

    S.E. Thompson;Guangyu Sun;Youn Sung Choi;T. Nishida

  • Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

    Y. Sun;S. E. Thompson;T. Nishida

  • Lumped Element Modeling of Piezoelectric-Driven Synthetic Jet Actuators

    Quentin Gallas;Ryan Holman;Toshikazu Nishida;Bruce Carroll

  • Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants

    Abhishek Prasad;Qing Shan Xue;Viswanath Sankar;Toshikazu Nishida

  • Strain effect in semiconductors : theory and device applications

    Yongke Sun;Scott E. Thompson;Toshikazu Nishida

  • A MEMS acoustic energy harvester

    S B Horowitz;M Sheplak;L N Cattafesta;T Nishida

  • Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

    S. Thompson;G. Sun;K. Wu;J. Lim

  • Direct-current measurements of oxide and interface traps on oxidized silicon

    A. Neugroschel;Chih-Tang Sah;K.M. Han;M.S. Carroll

  • Strain Effect in Semiconductors

    Yongke Sun;Scott E. Thompson;Toshikazu Nishida

  • Abiotic-biotic characterization of Pt/Ir microelectrode arrays in chronic implants.

    Abhishek Prasad;Qing-Shan Xue;Robert Dieme;Viswanath Sankar

  • TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    Patrick D. Lomenzo;Qanit Takmeel;Chuanzhen Zhou;Chris M. Fancher

  • Corrosion of Tungsten Microelectrodes used in Neural Recording Applications

    Erin Patrick;Mark E. Orazem;Justin C. Sanchez;Toshikazu Nishida

  • Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

    Patrick D. Lomenzo;Peng Zhao;Qanit Takmeel;Saeed Moghaddam

  • Hole mobility in silicon inversion layers: Stress and surface orientation

    Guangyu Sun;Yongke Sun;Toshikazu Nishida;Scott E. Thompson

  • Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates

    E.M. Chow;V. Chandrasekaran;A. Partridge;T. Nishida

  • Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

    B. S. Kang;S. Kim;J. Kim;F. Ren

  • Development of a micromachined piezoelectric microphone for aeroacoustics applications.

    Stephen Horowitz;Toshikazu Nishida;Louis Cattafesta;Mark Sheplak

  • Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( $\sim$ 1.5 GPa) Channel Stress

    S. Suthram;J.C. Ziegert;T. Nishida;S.E. Thompson

  • Future of Strained Si/Semiconductors in Nanoscale MOSFETs

    S. E. Thompson;S. Suthram;Y. Sun;G. Sun

  • A Micromachined Dual-Backplate Capacitive Microphone for Aeroacoustic Measurements

    D.T. Martin;Jian Liu;K. Kadirvel;R.M. Fox

  • Low Frequency Pulsed Resonant Converter for Energy Harvesting

    Shengwen Xu;K.D.T. Ngo;T. Nishida;Gyo-Bum Chung

  • Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors

    Patrick D. Lomenzo;Ching-Chang Chung;Chuanzhen Zhou;Jacob L. Jones

  • Wideband RELAX and wideband CLEAN for aeroacoustic imaging.

    Yanwei Wang;Jian Li;Petre Stoica;Mark Sheplak

Frequent Co-Authors

Scott E. Thompson
Scott E. Thompson University of Florida
Jacob L. Jones
Jacob L. Jones North Carolina State University
Khai D. T. Ngo
Khai D. T. Ngo Virginia Tech
Chih-Tang Sah
Chih-Tang Sah University of Florida
Fan Ren
Fan Ren University of Florida
Jenshan Lin
Jenshan Lin University of Florida
Prashant Majhi
Prashant Majhi Intel (United States)
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Stephen J. Pearton
Stephen J. Pearton University of Florida
John R. Reynolds
John R. Reynolds Georgia Institute of Technology

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