World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
9394
World Ranking
2821
National Ranking
1066

Overview

Toshikazu Nishida is affiliated with the University of Florida in the United States. Their research spans the fields of engineering and materials science, with a particular focus on electrical and electronic engineering, materials chemistry, and biomedical engineering. Additional subfields include automotive engineering and atomic and molecular physics, and optics.

The scientist has contributed to topics related to ferroelectric and negative capacitance devices, advanced memory and neural computing, and additive manufacturing and 3D printing technologies. Their work also addresses semiconductor materials and devices, MXene and MAX phase materials, electronic and structural properties of oxides, as well as ferroelectric and piezoelectric materials.

Recent papers authored or co-authored by Nishida include:

  • Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions (2020, Nanotechnology)
  • High-resolution stereolithography using a static liquid constrained interface (2021, Communications Materials)
  • Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films (2020, Applied Physics Letters)
  • A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator (2020, Applied Physics Letters)
  • Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films (2020, ECS Journal of Solid State Science and Technology)

Frequent coauthors in Nishida's research include Glen Walters, Aniruddh Shekhawat, Saeed Moghaddam, Paul Chojecki, and Roozbeh Tabrizian.

Their work has appeared in multiple scientific venues, including:

  • Applied Physics Letters
  • Nanotechnology
  • Communications Materials
  • Small Methods
  • ECS Journal of Solid State Science and Technology

Best Publications

  • Uniaxial-process-induced strained-Si: extending the CMOS roadmap

    S.E. Thompson;Guangyu Sun;Youn Sung Choi;T. Nishida

  • Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

    Y. Sun;S. E. Thompson;T. Nishida

  • Lumped Element Modeling of Piezoelectric-Driven Synthetic Jet Actuators

    Quentin Gallas;Ryan Holman;Toshikazu Nishida;Bruce Carroll

  • Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants

    Abhishek Prasad;Qing Shan Xue;Viswanath Sankar;Toshikazu Nishida

  • Strain effect in semiconductors : theory and device applications

    Yongke Sun;Scott E. Thompson;Toshikazu Nishida

  • A MEMS acoustic energy harvester

    S B Horowitz;M Sheplak;L N Cattafesta;T Nishida

  • Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

    S. Thompson;G. Sun;K. Wu;J. Lim

  • Direct-current measurements of oxide and interface traps on oxidized silicon

    A. Neugroschel;Chih-Tang Sah;K.M. Han;M.S. Carroll

  • Strain Effect in Semiconductors

    Yongke Sun;Scott E. Thompson;Toshikazu Nishida

  • Abiotic-biotic characterization of Pt/Ir microelectrode arrays in chronic implants.

    Abhishek Prasad;Qing-Shan Xue;Robert Dieme;Viswanath Sankar

  • TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    Patrick D. Lomenzo;Qanit Takmeel;Chuanzhen Zhou;Chris M. Fancher

  • Corrosion of Tungsten Microelectrodes used in Neural Recording Applications

    Erin Patrick;Mark E. Orazem;Justin C. Sanchez;Toshikazu Nishida

  • Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

    Patrick D. Lomenzo;Peng Zhao;Qanit Takmeel;Saeed Moghaddam

  • Hole mobility in silicon inversion layers: Stress and surface orientation

    Guangyu Sun;Yongke Sun;Toshikazu Nishida;Scott E. Thompson

  • Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates

    E.M. Chow;V. Chandrasekaran;A. Partridge;T. Nishida

  • Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

    B. S. Kang;S. Kim;J. Kim;F. Ren

  • Development of a micromachined piezoelectric microphone for aeroacoustics applications.

    Stephen Horowitz;Toshikazu Nishida;Louis Cattafesta;Mark Sheplak

  • Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( $\sim$ 1.5 GPa) Channel Stress

    S. Suthram;J.C. Ziegert;T. Nishida;S.E. Thompson

  • Future of Strained Si/Semiconductors in Nanoscale MOSFETs

    S. E. Thompson;S. Suthram;Y. Sun;G. Sun

  • A Micromachined Dual-Backplate Capacitive Microphone for Aeroacoustic Measurements

    D.T. Martin;Jian Liu;K. Kadirvel;R.M. Fox

  • Low Frequency Pulsed Resonant Converter for Energy Harvesting

    Shengwen Xu;K.D.T. Ngo;T. Nishida;Gyo-Bum Chung

  • Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors

    Patrick D. Lomenzo;Ching-Chang Chung;Chuanzhen Zhou;Jacob L. Jones

  • Wideband RELAX and wideband CLEAN for aeroacoustic imaging.

    Yanwei Wang;Jian Li;Petre Stoica;Mark Sheplak

Frequent Co-Authors

Scott E. Thompson
Scott E. Thompson University of Florida
Jacob L. Jones
Jacob L. Jones North Carolina State University
Khai D. T. Ngo
Khai D. T. Ngo Virginia Tech
Chih-Tang Sah
Chih-Tang Sah University of Florida
Fan Ren
Fan Ren University of Florida
Jenshan Lin
Jenshan Lin University of Florida
Prashant Majhi
Prashant Majhi Intel (United States)
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Stephen J. Pearton
Stephen J. Pearton University of Florida
John R. Reynolds
John R. Reynolds Georgia Institute of Technology

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