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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 50 2821 2706 1067 996 218 9394

Toshikazu Nishida publications per year

The chart shows the history of publications by Toshikazu Nishida between 1987 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Toshikazu Nishida published across 38 years, from 1987 to 2024, averaging 6.1 papers a year. Output peaked at 19 publications in 2006. 6 of the 230 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1987 to 2024. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2006. 1987: 2 publications 1988: 2 publications 1989: 0 publications 1990: 0 publications 1991: 6 publications 1992: 2 publications 1993: 0 publications 1994: 2 publications 1995: 2 publications 1996: 1 publication 1997: 0 publications 1998: 0 publications 1999: 1 publication 2000: 5 publications 2001: 10 publications 2002: 11 publications 2003: 10 publications 2004: 9 publications 2005: 11 publications 2006: 19 publications 2007: 18 publications 2008: 19 publications 2009: 9 publications 2010: 17 publications 2011: 7 publications 2012: 9 publications 2013: 2 publications 2014: 8 publications 2015: 5 publications 2016: 3 publications 2017: 2 publications 2018: 6 publications 2019: 10 publications 2020: 12 publications 2021: 4 publications 2022: 0 publications 2023: 3 publications 2024: 3 publications
1987 2024

230 publications in total across all disciplines

View publications per year as a table
Toshikazu Nishida: publications per year, 1987 to 2024
Year Publications
1987 2
1988 2
1989 0
1990 0
1991 6
1992 2
1993 0
1994 2
1995 2
1996 1
1997 0
1998 0
1999 1
2000 5
2001 10
2002 11
2003 10
2004 9
2005 11
2006 19
2007 18
2008 19
2009 9
2010 17
2011 7
2012 9
2013 2
2014 8
2015 5
2016 3
2017 2
2018 6
2019 10
2020 12
2021 4
2022 0
2023 3
2024 3
Total 230
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Toshikazu Nishida publications per year - data summary

  • Toshikazu Nishida, a Electronics and Electrical Engineering scholar from University of Florida, has 230 publications recorded across 38 years, from 1987 to 2024.
  • The oldest publication on record dates to 1987 and the most recent to 2024.
  • The most productive years are 2006 and 2008, with 19 publications each.
  • The least productive years with any output are 1996 and 1999, with 1 publication each.
  • 6 of the 38 years in the span carry no publications at all (1989, 1990, 1993, 1997 and others).
  • The rate of publication averages 6.1 papers per year over the whole span, or 7.2 per year counting only the 32 years with at least one publication.
  • The last 5 years on the chart (2020-2024) hold 22 publications, 10% of the career total.
  • Split into equal eras - 1987-1999: 18 publications (1.4 per year); 2000-2012: 154 publications (11.8 per year); 2013-2024: 58 publications (4.8 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

Toshikazu Nishida publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toshikazu Nishida sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 218
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Toshikazu Nishida publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • Toshikazu Nishida, a Electronics and Electrical Engineering scholar from University of Florida, records 218 publications - the 35th percentile of the discipline.
  • 35% of ranked Electronics and Electrical Engineering scientists score the same or lower than Toshikazu Nishida, and about 65% score higher.
  • The median of the discipline falls in the 254–273 publications range, and Toshikazu Nishida ranks below the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

Toshikazu Nishida D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toshikazu Nishida sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 50 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141 50
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Toshikazu Nishida D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • Toshikazu Nishida, a Electronics and Electrical Engineering scholar from University of Florida, records 50 D-Index - the 60th percentile of the discipline.
  • 60% of ranked Electronics and Electrical Engineering scientists score the same or lower than Toshikazu Nishida, and about 40% score higher.
  • The median of the discipline falls in the 46 D-Index range, and Toshikazu Nishida ranks above the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Overview

Toshikazu Nishida is affiliated with the University of Florida in the United States. Their research spans the fields of engineering and materials science, with a particular focus on electrical and electronic engineering, materials chemistry, and biomedical engineering. Additional subfields include automotive engineering and atomic and molecular physics, and optics.

The scientist has contributed to topics related to ferroelectric and negative capacitance devices, advanced memory and neural computing, and additive manufacturing and 3D printing technologies. Their work also addresses semiconductor materials and devices, MXene and MAX phase materials, electronic and structural properties of oxides, as well as ferroelectric and piezoelectric materials.

Recent papers authored or co-authored by Nishida include:

  • Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions (2020, Nanotechnology)
  • High-resolution stereolithography using a static liquid constrained interface (2021, Communications Materials)
  • Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films (2020, Applied Physics Letters)
  • A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator (2020, Applied Physics Letters)
  • Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films (2020, ECS Journal of Solid State Science and Technology)

Frequent coauthors in Nishida's research include Glen Walters, Aniruddh Shekhawat, Saeed Moghaddam, Paul Chojecki, and Roozbeh Tabrizian.

Their work has appeared in multiple scientific venues, including:

  • Applied Physics Letters
  • Nanotechnology
  • Communications Materials
  • Small Methods
  • ECS Journal of Solid State Science and Technology

Best Publications

  • Uniaxial-process-induced strained-Si: extending the CMOS roadmap

    S.E. Thompson;Guangyu Sun;Youn Sung Choi;T. Nishida

  • Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

    Y. Sun;S. E. Thompson;T. Nishida

  • Lumped Element Modeling of Piezoelectric-Driven Synthetic Jet Actuators

    Quentin Gallas;Ryan Holman;Toshikazu Nishida;Bruce Carroll

  • Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants

    Abhishek Prasad;Qing Shan Xue;Viswanath Sankar;Toshikazu Nishida

  • Strain effect in semiconductors : theory and device applications

    Yongke Sun;Scott E. Thompson;Toshikazu Nishida

  • A MEMS acoustic energy harvester

    S B Horowitz;M Sheplak;L N Cattafesta;T Nishida

  • Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

    S. Thompson;G. Sun;K. Wu;J. Lim

  • Direct-current measurements of oxide and interface traps on oxidized silicon

    A. Neugroschel;Chih-Tang Sah;K.M. Han;M.S. Carroll

  • Strain Effect in Semiconductors

    Yongke Sun;Scott E. Thompson;Toshikazu Nishida

  • Abiotic-biotic characterization of Pt/Ir microelectrode arrays in chronic implants.

    Abhishek Prasad;Qing-Shan Xue;Robert Dieme;Viswanath Sankar

  • TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    Patrick D. Lomenzo;Qanit Takmeel;Chuanzhen Zhou;Chris M. Fancher

  • Corrosion of Tungsten Microelectrodes used in Neural Recording Applications

    Erin Patrick;Mark E. Orazem;Justin C. Sanchez;Toshikazu Nishida

  • Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

    Patrick D. Lomenzo;Peng Zhao;Qanit Takmeel;Saeed Moghaddam

  • Hole mobility in silicon inversion layers: Stress and surface orientation

    Guangyu Sun;Yongke Sun;Toshikazu Nishida;Scott E. Thompson

  • Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates

    E.M. Chow;V. Chandrasekaran;A. Partridge;T. Nishida

  • Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

    B. S. Kang;S. Kim;J. Kim;F. Ren

  • Development of a micromachined piezoelectric microphone for aeroacoustics applications.

    Stephen Horowitz;Toshikazu Nishida;Louis Cattafesta;Mark Sheplak

  • Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( $\sim$ 1.5 GPa) Channel Stress

    S. Suthram;J.C. Ziegert;T. Nishida;S.E. Thompson

  • Future of Strained Si/Semiconductors in Nanoscale MOSFETs

    S. E. Thompson;S. Suthram;Y. Sun;G. Sun

  • A Micromachined Dual-Backplate Capacitive Microphone for Aeroacoustic Measurements

    D.T. Martin;Jian Liu;K. Kadirvel;R.M. Fox

  • Low Frequency Pulsed Resonant Converter for Energy Harvesting

    Shengwen Xu;K.D.T. Ngo;T. Nishida;Gyo-Bum Chung

  • Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors

    Patrick D. Lomenzo;Ching-Chang Chung;Chuanzhen Zhou;Jacob L. Jones

  • Wideband RELAX and wideband CLEAN for aeroacoustic imaging.

    Yanwei Wang;Jian Li;Petre Stoica;Mark Sheplak

Frequent Co-Authors

Mark Sheplak
Mark Sheplak University of Florida
Scott E. Thompson
Scott E. Thompson University of Florida
Louis N. Cattafesta
Louis N. Cattafesta Illinois Institute of Technology
Saeed Moghaddam
Saeed Moghaddam University of Florida
Jacob L. Jones
Jacob L. Jones North Carolina State University
Khai D. T. Ngo
Khai D. T. Ngo Virginia Tech
Wolfgang J. Streit
Wolfgang J. Streit University of Florida
Chih-Tang Sah
Chih-Tang Sah University of Florida
Fan Ren
Fan Ren University of Florida

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