World's Best Scientists 2026 revealed!
Geert Eneman

Geert Eneman

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6286
World Ranking
4517
National Ranking
97

Geert Eneman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Geert Eneman sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 326 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Geert Eneman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Geert Eneman sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Geert Eneman is affiliated with Imec in Belgium and has a significant publication record in engineering, with a specialized focus on electrical and electronic engineering. Their research spans various subfields, including biomedical engineering, atomic and molecular physics and optics, mechanics of materials, and condensed matter physics.

The main topics covered in Geert Eneman's work include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • Silicon carbide semiconductor technologies
  • Nanowire synthesis and applications
  • Ferroelectric and negative capacitance devices
  • Integrated circuits and semiconductor failure analysis
  • Semiconductor quantum structures and devices

Geert Eneman has contributed numerous papers in respected publication venues. Frequent venues of publication include:

  • IEEE Transactions on Electron Devices (7 publications)
  • ECS Meeting Abstracts (6 publications)
  • ECS Transactions (5 publications)
  • ECS Journal of Solid State Science and Technology (2 publications)
  • 2022 IEEE International Reliability Physics Symposium (IRPS) (2 publications)

Among recent papers authored or co-authored by Geert Eneman are:

  • Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of Sheets, 2020, IEEE Transactions on Electron Devices
  • (Invited) Stress Simulations of Fins, Wires, and Nanosheets, 2020, ECS Transactions
  • Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress, 2022, IEEE Transactions on Electron Devices
  • Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors, 2021, IEEE Transactions on Electron Devices

Frequent co-authors in their research collaborations include Naoto Horiguchi, A. Veloso, Philippe Matagne, A. De Keersgieter, and Eddy Simoen.

Best Publications

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

    Doyoung Jang;Dmitry Yakimets;Geert Eneman;Pieter Schuddinck

  • Vertical GAAFETs for the Ultimate CMOS Scaling

    Dmitry Yakimets;Geert Eneman;Pieter Schuddinck;Trong Huynh Bao

  • Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    B. Vincent;Y. Shimura;S. Takeuchi;T. Nishimura

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Electrical TCAD Simulations of a Germanium pMOSFET Technology

    Geert Hellings;Geert Eneman;Raymond Krom;B De Jaeger

  • High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

    G. Nicholas;B. De Jaeger;D.P. Brunco;P. Zimmerman

  • Vertically stacked gate-all-around Si nanowire transistors: Key Process Optimizations and Ring Oscillator Demonstration

    H. Mertens;R. Ritzenthaler;V. Pena;G. Santoro

  • Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$ n Junctions

    G. Eneman;M. Wiot;A. Brugere;O.S.I. Casain

  • Challenges and opportunities in advanced Ge pMOSFETs

    E Simoen;J Mitard;Geert Hellings;Geert Eneman

  • pMOSFET with 200% mobility enhancement induced by multiple stressors

    L. Washington;F. Nouri;S. Thirupapuliyur;G. Eneman

  • Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

    G. Eneman;P. Verheyen;R. Rooyackers;F. Nouri

  • Exploring the limits of stress-enhanced hole mobility

    L. Smith;V. Moroz;G. Eneman;P. Verheyen

  • Layout impact on the performance of a locally strained PMOSFET

    G. Eneman;P. Verheyen;R. Rooyackers;F. Nouri

  • Germanium for advanced CMOS anno 2009: a SWOT analysis

    M. Caymax;G. Eneman;F. Bellenger;C. Merckling

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

    L. Witters;H. Arimura;F. Sebaai;A. Hikavyy

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • A systematic study of trade-offs in engineering a locally strained pMOSFET

    F. Nouri;P. Verheyen;L. Washington;V. Moroz

  • Scalability of Stress Induced by Contact-Etch-Stop Layers: A Simulation Study

    G. Eneman;P. Verheyen;A. De Keersgieter;M. Jurczak

  • Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications

    A. Veloso;T. Huynh-Bao;P. Matagne;D. Jang

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Related Online Degrees & Career Pathways

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