World's Best Scientists 2026 revealed!
Wilfried Vandervorst

Wilfried Vandervorst

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
16778
World Ranking
1289
National Ranking
29

Materials Science

D-Index
67
Citations
18471
World Ranking
5046
National Ranking
50

Wilfried Vandervorst publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wilfried Vandervorst sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 889 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Wilfried Vandervorst D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wilfried Vandervorst sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 64 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Wilfried Vandervorst is affiliated with Imec in Belgium, specializing in research at the intersection of engineering and materials science. Their work spans a variety of subfields including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, and computational mechanics.

Their research prominently involves topics such as ion-surface interactions and analysis, semiconductor materials and devices, advanced materials characterization techniques, integrated circuits and semiconductor failure analysis, diamond and carbon-based materials research, electronic and structural properties of oxides, and force microscopy techniques and applications.

Vandervorst's publication record includes contributions to several scientific journals, with frequent appearances in:

  • Microscopy and Microanalysis
  • Journal of Applied Physics
  • Scientific Reports
  • Optics Express
  • The Journal of Physical Chemistry C

Recent papers authored or co-authored by Vandervorst include:

  • Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice, 2020, The Journal of Physical Chemistry C
  • Unravelling stacking order in epitaxial bilayer MX2 using 4D-STEM with unsupervised learning, 2020, Nanotechnology
  • The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements, 2020, Scientific Reports
  • A Correlative ToF-SIMS/SPM Methodology for Probing 3D Devices, 2020, Analytical Chemistry
  • Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx, 2020, ECS Journal of Solid State Science and Technology

Collaborators who frequently co-author with Vandervorst include Claudia Fleischmann, Paul van der Heide, Geoffrey Pourtois, R. J. H. Morris, and Johan Meersschaut, indicating active cooperation within a network of researchers.

Best Publications

  • Island growth as a growth mode in atomic layer deposition: A phenomenological model

    Riikka L. Puurunen;Wilfried Vandervorst

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

    Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

    Martin Green;M.Y Ho;B Busch;G.D Wilk

  • Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    H. Nohira;W. Tsai;W. Besling;E. Young

  • Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  • Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

    F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  • Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

    Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  • Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

    Unknown

  • Thickness dependence of the resistivity of platinum-group metal thin films

    Shibesh Dutta;Kiroubanand Sankaran;Kristof Moors;Geoffrey Pourtois

  • Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

    A. Satta;E. Simoen;T. Clarysse;T. Janssens

  • Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

    Kazuki Nagashima;Hirotaka Koga;Umberto Celano;Fuwei Zhuge

  • Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling

    Pierre Eyben;Mingwei Xu;Natasja Duhayon;Trudo Clarysse

  • Ion-implantation issues in the formation of shallow junctions in germanium

    Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  • P implantation doping of Ge: Diffusion, activation, and recrystallization

    A. Satta;T. Janssens;T. Clarysse;E. Simoen

  • Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification

    Kausala Mylvaganam;Liangchi Zhang;Pierre Eyben;Jay Mody

  • Atomic layer deposition of hafnium oxide on germanium substrates

    Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

  • Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

    Bartek Pawlak;Radu Surdeanu;B Colombeau;A.J Smith

  • Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices

    Mohanchand Paladugu;Clement Merckling;Roger Loo;Olivier Richard

  • Thickness dependence of the resistivity of Platinum group metal thin films

    Shibesh Dutta;Kiroubanand Sankaran;Kristof Moors;Geoffrey Pourtois

Frequent Co-Authors

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