D-Index & Metrics Best Publications
Wilfried Vandervorst

Wilfried Vandervorst

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 51 Citations 9,260 546 World Ranking 1682 National Ranking 37
Materials Science D-index 59 Citations 12,516 750 World Ranking 4550 National Ranking 48

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electron
  • Optics

The scientist’s investigation covers issues in Optoelectronics, Nanotechnology, Silicon, Analytical chemistry and Spreading resistance profiling. He has included themes like Layer, Transistor and Shallow trench isolation in his Optoelectronics study. He focuses mostly in the field of Nanotechnology, narrowing it down to topics relating to Resistive random-access memory and, in certain cases, Protein filament.

His Silicon study combines topics from a wide range of disciplines, such as Chemical physics, Doping, Sputtering, Crystallography and Annealing. The study incorporates disciplines such as Composite material, Nanometre and Chemical vapor deposition in addition to Analytical chemistry. Wilfried Vandervorst studied Spreading resistance profiling and Microscopy that intersect with CMOS.

His most cited work include:

  • Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers (248 citations)
  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. (222 citations)
  • Island growth as a growth mode in atomic layer deposition: A phenomenological model (204 citations)

What are the main themes of his work throughout his whole career to date?

Wilfried Vandervorst mainly focuses on Optoelectronics, Analytical chemistry, Nanotechnology, Silicon and Spreading resistance profiling. Wilfried Vandervorst works mostly in the field of Optoelectronics, limiting it down to topics relating to Epitaxy and, in certain cases, Germanium and Crystallography. Wilfried Vandervorst has researched Analytical chemistry in several fields, including Annealing, Chemical vapor deposition and Sputtering.

His Nanotechnology research integrates issues from Conductive atomic force microscopy, Diamond, Semiconductor, MOSFET and Electrical conductor. His work deals with themes such as Boron, Thin film and Atomic physics, which intersect with Silicon. His Spreading resistance profiling study integrates concerns from other disciplines, such as Electrical resistivity and conductivity and Optics, Microscopy.

He most often published in these fields:

  • Optoelectronics (40.47%)
  • Analytical chemistry (34.25%)
  • Nanotechnology (23.54%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (40.47%)
  • Nanotechnology (23.54%)
  • Epitaxy (11.58%)

In recent papers he was focusing on the following fields of study:

Wilfried Vandervorst mainly investigates Optoelectronics, Nanotechnology, Epitaxy, Analytical chemistry and Nanoscopic scale. Within one scientific family, he focuses on topics pertaining to Programmable metallization cell under Optoelectronics, and may sometimes address concerns connected to Dielectric. His Nanotechnology research incorporates elements of Electrical conductor, Diamond and Resistive random-access memory.

His Epitaxy research focuses on subjects like Chemical vapor deposition, which are linked to Dopant, Amorphous solid and Wafer. His study looks at the relationship between Analytical chemistry and fields such as Doping, as well as how they intersect with chemical problems. His study looks at the relationship between Spreading resistance profiling and topics such as Microscopy, which overlap with Equivalent series resistance.

Between 2013 and 2021, his most popular works were:

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. (222 citations)
  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory (114 citations)
  • Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory (86 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electron
  • Optics

Nanotechnology, Optoelectronics, Electrical conductor, Diamond and Resistive random-access memory are his primary areas of study. He combines subjects such as Conductive atomic force microscopy, Metrology and Spreading resistance profiling with his study of Nanotechnology. Wilfried Vandervorst interconnects Nanoelectronics and Microscopy in the investigation of issues within Spreading resistance profiling.

In the subject of general Optoelectronics, his work in Nanowire is often linked to Stack, thereby combining diverse domains of study. His Resistive random-access memory research includes elements of Non-volatile memory and Protein filament. His studies in Thin film integrate themes in fields like Chemical physics, Aspect ratio and Analytical chemistry.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Island growth as a growth mode in atomic layer deposition: A phenomenological model

Riikka L. Puurunen;Wilfried Vandervorst.
Journal of Applied Physics (2004)

348 Citations

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer.
Nano Letters (2014)

310 Citations

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Martin Green;M.Y Ho;B Busch;G.D Wilk.
Journal of Applied Physics (2002)

310 Citations

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl;K. Opsomer;M. Popovici;N. Menou.
Microelectronic Engineering (2009)

285 Citations

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard.
Journal of Applied Physics (2004)

180 Citations

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

H. Nohira;W. Tsai;W. Besling;E. Young.
Journal of Non-crystalline Solids (2002)

179 Citations

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini.
Nano Letters (2015)

167 Citations

Ion-implantation issues in the formation of shallow junctions in germanium

Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)

150 Citations

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

Kazuki Nagashima;Hirotaka Koga;Umberto Celano;Fuwei Zhuge.
Scientific Reports (2015)

147 Citations

Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling

Pierre Eyben;Mingwei Xu;Natasja Duhayon;Trudo Clarysse.
Journal of Vacuum Science & Technology B (2002)

138 Citations

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