The scientist’s investigation covers issues in Optoelectronics, Nanotechnology, Silicon, Analytical chemistry and Spreading resistance profiling. He has included themes like Layer, Transistor and Shallow trench isolation in his Optoelectronics study. He focuses mostly in the field of Nanotechnology, narrowing it down to topics relating to Resistive random-access memory and, in certain cases, Protein filament.
His Silicon study combines topics from a wide range of disciplines, such as Chemical physics, Doping, Sputtering, Crystallography and Annealing. The study incorporates disciplines such as Composite material, Nanometre and Chemical vapor deposition in addition to Analytical chemistry. Wilfried Vandervorst studied Spreading resistance profiling and Microscopy that intersect with CMOS.
Wilfried Vandervorst mainly focuses on Optoelectronics, Analytical chemistry, Nanotechnology, Silicon and Spreading resistance profiling. Wilfried Vandervorst works mostly in the field of Optoelectronics, limiting it down to topics relating to Epitaxy and, in certain cases, Germanium and Crystallography. Wilfried Vandervorst has researched Analytical chemistry in several fields, including Annealing, Chemical vapor deposition and Sputtering.
His Nanotechnology research integrates issues from Conductive atomic force microscopy, Diamond, Semiconductor, MOSFET and Electrical conductor. His work deals with themes such as Boron, Thin film and Atomic physics, which intersect with Silicon. His Spreading resistance profiling study integrates concerns from other disciplines, such as Electrical resistivity and conductivity and Optics, Microscopy.
Wilfried Vandervorst mainly investigates Optoelectronics, Nanotechnology, Epitaxy, Analytical chemistry and Nanoscopic scale. Within one scientific family, he focuses on topics pertaining to Programmable metallization cell under Optoelectronics, and may sometimes address concerns connected to Dielectric. His Nanotechnology research incorporates elements of Electrical conductor, Diamond and Resistive random-access memory.
His Epitaxy research focuses on subjects like Chemical vapor deposition, which are linked to Dopant, Amorphous solid and Wafer. His study looks at the relationship between Analytical chemistry and fields such as Doping, as well as how they intersect with chemical problems. His study looks at the relationship between Spreading resistance profiling and topics such as Microscopy, which overlap with Equivalent series resistance.
Nanotechnology, Optoelectronics, Electrical conductor, Diamond and Resistive random-access memory are his primary areas of study. He combines subjects such as Conductive atomic force microscopy, Metrology and Spreading resistance profiling with his study of Nanotechnology. Wilfried Vandervorst interconnects Nanoelectronics and Microscopy in the investigation of issues within Spreading resistance profiling.
In the subject of general Optoelectronics, his work in Nanowire is often linked to Stack, thereby combining diverse domains of study. His Resistive random-access memory research includes elements of Non-volatile memory and Protein filament. His studies in Thin film integrate themes in fields like Chemical physics, Aspect ratio and Analytical chemistry.
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Island growth as a growth mode in atomic layer deposition: A phenomenological model
Riikka L. Puurunen;Wilfried Vandervorst.
Journal of Applied Physics (2004)
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.
Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer.
Nano Letters (2014)
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
Martin Green;M.Y Ho;B Busch;G.D Wilk.
Journal of Applied Physics (2002)
High-k dielectrics for future generation memory devices (Invited Paper)
J. A. Kittl;K. Opsomer;M. Popovici;N. Menou.
Microelectronic Engineering (2009)
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard.
Journal of Applied Physics (2004)
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
H. Nohira;W. Tsai;W. Besling;E. Young.
Journal of Non-crystalline Solids (2002)
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini.
Nano Letters (2015)
Ion-implantation issues in the formation of shallow junctions in germanium
Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)
Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory
Kazuki Nagashima;Hirotaka Koga;Umberto Celano;Fuwei Zhuge.
Scientific Reports (2015)
Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling
Pierre Eyben;Mingwei Xu;Natasja Duhayon;Trudo Clarysse.
Journal of Vacuum Science & Technology B (2002)
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