World's Best Scientists 2026 revealed!
Roger Loo

Roger Loo

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
9082
World Ranking
3848
National Ranking
86

Materials Science

D-Index
43
Citations
9033
World Ranking
12238
National Ranking
143

Overview

Roger Loo is affiliated with Imec in Belgium and has contributed extensively to research in engineering and physics. Their work focuses primarily on semiconductor materials, devices, and interfaces, as well as silicon and solar cell technologies. Their research spans various subfields including electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, materials chemistry, and surfaces, coatings, and films.

The scientist's main research topics include:

  • Semiconductor materials and devices
  • Silicon and Solar Cell Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Thin-Film Transistor Technologies
  • Photonic and Optical Devices
  • Nanowire Synthesis and Applications

Roger Loo has published papers in a range of venues with notable frequency in ECS Meeting Abstracts and ECS Transactions. Other frequent publication venues include ECS Journal of Solid State Science and Technology, Japanese Journal of Applied Physics, and IEEE Transactions on Electron Devices.

Recent papers authored or co-authored by Loo include:

  • "Wafer-scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple-junction solar cells," 2022, Progress in Photovoltaics Research and Applications
  • "Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections," 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
  • "Simultaneous Dimensional and Analytical Characterization of Ordered Nanostructures," 2021, Small
  • "Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails," 2022, IEEE Transactions on Electron Devices
  • "(Invited) Stress Simulations of Fins, Wires, and Nanosheets," 2020, ECS Transactions

Frequent collaborators in their research include Clément Porret, Andriy Hikavyy, Erik Rosseel, Naoto Horiguchi, and Gianluca Rengo. These collaborations have supported work across multiple domains of device fabrication, characterization, and semiconductor process innovations.

Best Publications

  • Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  • Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

    F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  • GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

    Alban Gassenq;F Gencarelli;J Van Campenhout;Y Shimura

  • Multiple gate semiconductor device and method for forming same

    Anil Kottantharayil;Roger Loo

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • Germanium-on-Silicon Mid-Infrared Arrayed Waveguide Grating Multiplexers

    Aditya Malik;Muhammad Muneeb;Shibnath Pathak;Yosuke Shimura

  • Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

    A. Vandooren;D. Leonelli;R. Rooyackers;A. Hikavyy

  • Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    B. Vincent;Y. Shimura;S. Takeuchi;T. Nishimura

  • Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

    Gunther Roelkens;Utsav Dave;Alban Gassenq;Nannicha Hattasan

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices

    Mohanchand Paladugu;Clement Merckling;Roger Loo;Olivier Richard

  • Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared

    Aditya Malik;Sarvagya Dwivedi;Liesbet Van Landschoot;Muhammad Muneeb

  • High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

    R. Loo;G. Wang;L. Souriau;J. C. Lin

  • A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

    G. Wang;R. Loo;E. Simoen;L. Souriau

  • Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

    Federica Gencarelli;B Vincent;L Souriau;O Richard

  • Challenges and opportunities in advanced Ge pMOSFETs

    E Simoen;J Mitard;Geert Hellings;Geert Eneman

  • Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

    Gunther Roelkens;Utsav Dave;Alban Gassenq;Nannicha Hattasan

  • Selective area growth of high quality InP on Si (001) substrates

    Gang Wang;Maarten Leys;Roger Loo;Olivier Richard

  • Germanium-on-silicon planar concave grating wavelength (de)multiplexers in the mid-infrared

    Aditya Malik;Muhammad Muneeb;Yosuke Shimura;Joris Van Campenhout

  • Successful Selective Epitaxial Si1 − x Ge x Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

    R. Loo;M. Caymax;I. Peytier;S. Decoutere

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