S. Mantl

S. Mantl publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where S. Mantl sits on this spectrum.

S. Mantl D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where S. Mantl sits on this spectrum.

Overview

Best Publications

• Lasing in direct-bandgap GeSn alloy grown on Si

  S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  1360
  Citations

• Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

  J. Knoch;S. Mantl;J. Appenzeller

  353
  Citations

• Si–Ge–Sn alloys: From growth to applications

  S. Wirths;D. Buca;S. Mantl

  295
  Citations

• Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

  L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp

  227
  Citations

• Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

  M. Zhang;J. Knoch;Q.T. Zhao;St. Lenk

  215
  Citations

• Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

  Q. T. Zhao;U. Breuer;E. Rije;St. Lenk

  205
  Citations

• Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

  H. Trinkaus;B. Holländer;St. Rongen;S. Mantl

  196
  Citations

• Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

  S. Wirths;A. T. Tiedemann;Zoran Ikonic;P. Harrison

  190
  Citations

• Direct Bandgap Group IV Epitaxy on Si for Laser Applications

  N. von den Driesch;D. Stange;S. Wirths;G. Mussler

  166
  Citations

• Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

  C. Sandow;J. Knoch;C. Urban;Q.-T. Zhao

  157
  Citations

• Strain relaxation of pseudomorphic heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

  B. Holländer;St. Lenk;S. Mantl;H. Trinkaus

  145
  Citations

• Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

  J. M. J. Lopes;M. Roeckerath;T. Heeg;E. Rije

  137
  Citations

• Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

  S. Mantl;B. Holländer;R. Liedtke;S. Mesters

  137
  Citations

• Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

  J. Knoch;M. Zhang;Q. T. Zhao;St. Lenk

  129
  Citations

• Ion beam synthesis of buried α-FeSi2 and β-FeSi2 layers

  K. Radermacher;S. Mantl;Ch. Dieker;H. Lüth

  128
  Citations

• On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

  J. Knoch;Min Zhang;S. Mantl;J. Appenzeller

  122
  Citations

• Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

  M. Luysberg;D. Kirch;H. Trinkaus;B. Holländer

  120
  Citations

• GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

  Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  119
  Citations

• Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

  Daniela Stange;Nils von den Driesch;Denis Rainko;Søren Roesgaard

  119
  Citations

• Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

  D. Stange;S. Wirths;N. von den Driesch;G. Mussler

  111
  Citations

• Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

  Joachim Knoch;M Zhang;Joerg Appenzeller;S Mantl

  106
  Citations

• A vibrational study of ethanol adsorption on Si(100)

  Joseph Eng;Krishnan Raghavachari;Lisa M. Struck;Yves J. Chabal

  101
  Citations