S. Mantl

Overview

Best Publications

• Lasing in direct-bandgap GeSn alloy grown on Si

  S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  1360
  Citations

• Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

  J. Knoch;S. Mantl;J. Appenzeller

  353
  Citations

• Si–Ge–Sn alloys: From growth to applications

  S. Wirths;D. Buca;S. Mantl

  295
  Citations

• Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

  L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp

  227
  Citations

• Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

  M. Zhang;J. Knoch;Q.T. Zhao;St. Lenk

  215
  Citations

• Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

  Q. T. Zhao;U. Breuer;E. Rije;St. Lenk

  205
  Citations

• Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

  H. Trinkaus;B. Holländer;St. Rongen;S. Mantl

  196
  Citations

• Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

  S. Wirths;A. T. Tiedemann;Zoran Ikonic;P. Harrison

  190
  Citations

• Direct Bandgap Group IV Epitaxy on Si for Laser Applications

  N. von den Driesch;D. Stange;S. Wirths;G. Mussler

  166
  Citations

• Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

  C. Sandow;J. Knoch;C. Urban;Q.-T. Zhao

  157
  Citations

• Strain relaxation of pseudomorphic heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

  B. Holländer;St. Lenk;S. Mantl;H. Trinkaus

  145
  Citations

• Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

  J. M. J. Lopes;M. Roeckerath;T. Heeg;E. Rije

  137
  Citations

• Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

  S. Mantl;B. Holländer;R. Liedtke;S. Mesters

  137
  Citations

• Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

  J. Knoch;M. Zhang;Q. T. Zhao;St. Lenk

  129
  Citations

• Ion beam synthesis of buried α-FeSi2 and β-FeSi2 layers

  K. Radermacher;S. Mantl;Ch. Dieker;H. Lüth

  128
  Citations

• On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

  J. Knoch;Min Zhang;S. Mantl;J. Appenzeller

  122
  Citations

• Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

  M. Luysberg;D. Kirch;H. Trinkaus;B. Holländer

  120
  Citations

• GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

  Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  119
  Citations

• Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

  Daniela Stange;Nils von den Driesch;Denis Rainko;Søren Roesgaard

  119
  Citations

• Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

  D. Stange;S. Wirths;N. von den Driesch;G. Mussler

  111
  Citations

• Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

  Joachim Knoch;M Zhang;Joerg Appenzeller;S Mantl

  106
  Citations

• A vibrational study of ethanol adsorption on Si(100)

  Joseph Eng;Krishnan Raghavachari;Lisa M. Struck;Yves J. Chabal

  101
  Citations